[go: up one dir, main page]

WO2011160814A3 - Method for creating a passivated boron-doped region, especially during production of a solar cell, and solar cell with passivated boron-diffused region - Google Patents

Method for creating a passivated boron-doped region, especially during production of a solar cell, and solar cell with passivated boron-diffused region Download PDF

Info

Publication number
WO2011160814A3
WO2011160814A3 PCT/EP2011/003060 EP2011003060W WO2011160814A3 WO 2011160814 A3 WO2011160814 A3 WO 2011160814A3 EP 2011003060 W EP2011003060 W EP 2011003060W WO 2011160814 A3 WO2011160814 A3 WO 2011160814A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
boron
doped region
passivated
creating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/003060
Other languages
French (fr)
Other versions
WO2011160814A2 (en
Inventor
Valentin Mihailetchi
Radovan Kopecek
Eckard Wefringhaus
Rudolf Harney
Johann Jourdan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Solar Energy Research Center Konstanz E V
Original Assignee
International Solar Energy Research Center Konstanz E V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Solar Energy Research Center Konstanz E V filed Critical International Solar Energy Research Center Konstanz E V
Publication of WO2011160814A2 publication Critical patent/WO2011160814A2/en
Publication of WO2011160814A3 publication Critical patent/WO2011160814A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a method for fabrication of a passivated boron -doped region, especially in a solar cell, comprising the steps of a) providing a semiconductor substrate, b) forming a boron-doped region (202, 302, 402, 502) in said semiconductor substrate (201, 201, 301, 401), wherein at least part of a surface of said semiconductor substrate belongs to said boron-doped region (202, 302, 402, 502) and c) forming at least one dielectric coating film (204, 205, 304, 305, 404, 405, 504, 505) on at least part of the surface of the semiconductor substrate (201, 301, 401, 501) as modified by previous process -ing steps, wherein a borosilicate glass layer (202A, 302A, 402A, 502A) is formed on the surface of the boron-doped region (202, 302, 402, 502) and that at least one dielectric coating film (204, 304, 404, 504) is formed in direct contact with at least part of said borosilicate glass layer (202A,302A, 402A, 502A). The invention also relates to a solar cell having a boron-doped region that is passivated by means of a stack of borosilicate glass layer and a dielectric coating film.
PCT/EP2011/003060 2010-06-23 2011-06-21 Method for creating a passivated boron-doped region, especially during production of a solar cell, and solar cell with passivated boron-diffused region Ceased WO2011160814A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010024834.7 2010-06-23
DE102010024834.7A DE102010024834B4 (en) 2010-06-23 2010-06-23 Method for producing a passivated, boron-doped region

Publications (2)

Publication Number Publication Date
WO2011160814A2 WO2011160814A2 (en) 2011-12-29
WO2011160814A3 true WO2011160814A3 (en) 2012-07-05

Family

ID=44629111

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/003060 Ceased WO2011160814A2 (en) 2010-06-23 2011-06-21 Method for creating a passivated boron-doped region, especially during production of a solar cell, and solar cell with passivated boron-diffused region

Country Status (2)

Country Link
DE (1) DE102010024834B4 (en)
WO (1) WO2011160814A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015138959A (en) * 2014-01-24 2015-07-30 三菱電機株式会社 Photovoltaic device and photovoltaic device manufacturing method
DE102014109179B4 (en) 2014-07-01 2023-09-14 Universität Konstanz Method for producing differently doped areas in a silicon substrate, in particular for a solar cell, and solar cell with these differently doped areas
DE102014220121A1 (en) * 2014-10-02 2016-04-07 Gebr. Schmid Gmbh Bifacial solar cell and method of manufacture
CN109559982A (en) * 2018-10-23 2019-04-02 开封大学 A kind of boron diffusion technique of N-type crystalline silicon solar cell
CN113644161A (en) * 2021-07-22 2021-11-12 江苏润阳悦达光伏科技有限公司 Method for passivating borosilicate glass of solar cell
CN118538832B (en) * 2024-06-24 2024-11-08 江苏伏图拉新能源集团有限公司 An N-type back-contact photovoltaic module resistant to potential induced degradation

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222973A (en) * 2001-01-29 2002-08-09 Sharp Corp Photoelectric conversion element and method for manufacturing the same
US20050178431A1 (en) * 2002-10-15 2005-08-18 Sharp Kabushiki Kaisha Photovoltaic cell and photovoltaic module employing the same
US20080017243A1 (en) * 2006-07-24 2008-01-24 Denis De Ceuster Solar cell with reduced base diffusion area
WO2008045511A2 (en) * 2006-10-11 2008-04-17 Gamma Solar Photovoltaic solar module comprising bifacial solar cells
US20100024880A1 (en) * 2008-08-01 2010-02-04 Seongeun Lee Solar cell and method for manufacturing the same
US20100037939A1 (en) * 2008-08-12 2010-02-18 Hans-Juergen Eickelmann Methods of fabricating solar cell chips
WO2010052565A2 (en) * 2008-11-07 2010-05-14 Centrotherm Photovoltaics Technology Gmbh Method for manufacturing a solar cell with a two-stage doping
WO2011143449A2 (en) * 2010-05-12 2011-11-17 Applied Materials, Inc. Method of manufacturing crystalline silicon solar cells using epitaxial deposition

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222973A (en) * 2001-01-29 2002-08-09 Sharp Corp Photoelectric conversion element and method for manufacturing the same
US20050178431A1 (en) * 2002-10-15 2005-08-18 Sharp Kabushiki Kaisha Photovoltaic cell and photovoltaic module employing the same
US20080017243A1 (en) * 2006-07-24 2008-01-24 Denis De Ceuster Solar cell with reduced base diffusion area
WO2008045511A2 (en) * 2006-10-11 2008-04-17 Gamma Solar Photovoltaic solar module comprising bifacial solar cells
US20100024880A1 (en) * 2008-08-01 2010-02-04 Seongeun Lee Solar cell and method for manufacturing the same
US20100037939A1 (en) * 2008-08-12 2010-02-18 Hans-Juergen Eickelmann Methods of fabricating solar cell chips
WO2010052565A2 (en) * 2008-11-07 2010-05-14 Centrotherm Photovoltaics Technology Gmbh Method for manufacturing a solar cell with a two-stage doping
WO2011143449A2 (en) * 2010-05-12 2011-11-17 Applied Materials, Inc. Method of manufacturing crystalline silicon solar cells using epitaxial deposition

Also Published As

Publication number Publication date
DE102010024834A1 (en) 2011-12-29
DE102010024834B4 (en) 2024-09-26
WO2011160814A2 (en) 2011-12-29

Similar Documents

Publication Publication Date Title
MY175032A (en) Photovoltaic cell and laminate metallization
WO2011056570A3 (en) Conductive metal oxide films and photovoltaic devices
WO2011160814A3 (en) Method for creating a passivated boron-doped region, especially during production of a solar cell, and solar cell with passivated boron-diffused region
FR2963982B1 (en) LOW TEMPERATURE BONDING PROCESS
MY152718A (en) Solar cell
MX358614B (en) Sheet with coating which reflects thermal radiation.
WO2010127764A3 (en) Method for contacting a semiconductor substrate
FR2982422B1 (en) CONDUCTIVE SUBSTRATE FOR PHOTOVOLTAIC CELL
WO2010141814A3 (en) Passivation process for solar cell fabrication
WO2011122853A3 (en) Solar photovoltaic device and a production method for the same
WO2009041660A1 (en) Substrate for solar cell and solar cell
SG166738A1 (en) Method for manufacturing soi substrate and soi substrate
RU2013105449A (en) SOLAR BATTERY AND METHOD FOR ITS MANUFACTURE
WO2012157853A3 (en) Silicon solar cell and fabrication method thereof
MY171609A (en) Laser etching a stack of thin layers for a connection of a photovoltaic cell
WO2012037242A3 (en) Glass-coated flexible substrates for photovoltaic cells
WO2011002212A3 (en) Photovoltaic power-generating apparatus and method for manufacturing same
WO2011043609A3 (en) Photovoltaic power-generating apparatus and method for manufacturing same
TW201130046A (en) Semiconductor device and process for production of semiconductor device
WO2011131388A3 (en) Method for producing a solar cell and solar cell produced according to this method
WO2014044871A3 (en) Photovoltaic cell having a heterojunction and method for manufacturing such a cell
WO2011116762A3 (en) Method for producing a semiconductor solar cell
WO2012067444A3 (en) Conductive film with an oxide film and method for producing same
WO2014053572A3 (en) Transparent conductive electrode and associated production method
WO2011013961A3 (en) Method for forming a gapless semiconductor thin film

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11736273

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 11736273

Country of ref document: EP

Kind code of ref document: A2