GB8805155D0 - Semiconductor assembly - Google Patents

Semiconductor assembly

Info

Publication number: GB8805155D0
Authority: GB; United Kingdom
Prior art keywords: semiconductor assembly; semiconductor; assembly
Prior art date: 1988-03-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

GB888805155A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

GE Healthcare UK Ltd

Original Assignee

GE Healthcare UK Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-03-04

Filing date

1988-03-04

Publication date

1988-04-07

1988-03-04 Application filed by GE Healthcare UK Ltd filed Critical GE Healthcare UK Ltd

1988-03-04 Priority to GB8805155A priority Critical patent/GB2215514A/en

1988-04-07 Publication of GB8805155D0 publication Critical patent/GB8805155D0/en

1989-09-20 Publication of GB2215514A publication Critical patent/GB2215514A/en

Status Withdrawn legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Recrystallisation Techniques (AREA)

GB8805155A 1988-03-04 1988-03-04 Terminating dislocations in semiconductor epitaxial layers Withdrawn GB2215514A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
GB8805155A GB2215514A (en)	1988-03-04	1988-03-04	Terminating dislocations in semiconductor epitaxial layers

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB8805155A GB2215514A (en)	1988-03-04	1988-03-04	Terminating dislocations in semiconductor epitaxial layers

Publications (2)

Publication Number	Publication Date
GB8805155D0 true GB8805155D0 (en)	1988-04-07
GB2215514A GB2215514A (en)	1989-09-20

Family

ID=10632832

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8805155A Withdrawn GB2215514A (en)	1988-03-04	1988-03-04	Terminating dislocations in semiconductor epitaxial layers

Country Status (1)

Country	Link
GB (1)	GB2215514A (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5158907A (en) *	1990-08-02	1992-10-27	At&T Bell Laboratories	Method for making semiconductor devices with low dislocation defects
US5091767A (en) *	1991-03-18	1992-02-25	At&T Bell Laboratories	Article comprising a lattice-mismatched semiconductor heterostructure
DE4427715C1 (en) *	1994-08-05	1996-02-08	Daimler Benz Ag	Composite structure with a semiconductor layer arranged on a diamond layer and / or a diamond-like layer and a method for their production
US5859864A (en) *	1996-10-28	1999-01-12	Picolight Incorporated	Extended wavelength lasers having a restricted growth surface and graded lattice mismatch
US5877519A (en) *	1997-03-26	1999-03-02	Picolight Incoporated	Extended wavelength opto-electronic devices
US6335546B1 (en) *	1998-07-31	2002-01-01	Sharp Kabushiki Kaisha	Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
GB0220438D0 (en) *	2002-09-03	2002-10-09	Univ Warwick	Formation of lattice-turning semiconductor substrates
US8324660B2 (en)	2005-05-17	2012-12-04	Taiwan Semiconductor Manufacturing Company, Ltd.	Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en)	2005-05-17	2015-10-06	Taiwan Semiconductor Manufacturing Company, Ltd.	Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2007112066A2 (en)	2006-03-24	2007-10-04	Amberwave Systems Corporation	Lattice-mismatched semiconductor structures and related methods for device fabrication
WO2008030574A1 (en)	2006-09-07	2008-03-13	Amberwave Systems Corporation	Defect reduction using aspect ratio trapping
WO2008039534A2 (en)	2006-09-27	2008-04-03	Amberwave Systems Corporation	Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
US20080187018A1 (en)	2006-10-19	2008-08-07	Amberwave Systems Corporation	Distributed feedback lasers formed via aspect ratio trapping
US8304805B2 (en)	2009-01-09	2012-11-06	Taiwan Semiconductor Manufacturing Company, Ltd.	Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en)	2007-04-09	2010-11-02	Taiwan Semiconductor Manufacturing Company, Ltd.	Nitride-based multi-junction solar cell modules and methods for making the same
WO2008124154A2 (en)	2007-04-09	2008-10-16	Amberwave Systems Corporation	Photovoltaics on silicon
US8237151B2 (en)	2009-01-09	2012-08-07	Taiwan Semiconductor Manufacturing Company, Ltd.	Diode-based devices and methods for making the same
US8329541B2 (en)	2007-06-15	2012-12-11	Taiwan Semiconductor Manufacturing Company, Ltd.	InP-based transistor fabrication
WO2009035746A2 (en)	2007-09-07	2009-03-19	Amberwave Systems Corporation	Multi-junction solar cells
US8183667B2 (en)	2008-06-03	2012-05-22	Taiwan Semiconductor Manufacturing Co., Ltd.	Epitaxial growth of crystalline material
US8274097B2 (en)	2008-07-01	2012-09-25	Taiwan Semiconductor Manufacturing Company, Ltd.	Reduction of edge effects from aspect ratio trapping
US8981427B2 (en)	2008-07-15	2015-03-17	Taiwan Semiconductor Manufacturing Company, Ltd.	Polishing of small composite semiconductor materials
EP2335273A4 (en)	2008-09-19	2012-01-25	Taiwan Semiconductor Mfg	FORMATION OF DEVICES BY GROWTH OF EPITAXIAL LAYERS
US20100072515A1 (en)	2008-09-19	2010-03-25	Amberwave Systems Corporation	Fabrication and structures of crystalline material
US8253211B2 (en)	2008-09-24	2012-08-28	Taiwan Semiconductor Manufacturing Company, Ltd.	Semiconductor sensor structures with reduced dislocation defect densities
EP2415083B1 (en)	2009-04-02	2017-06-21	Taiwan Semiconductor Manufacturing Company, Ltd.	Devices formed from a non-polar plane of a crystalline material and method of making the same
TWI562195B (en)	2010-04-27	2016-12-11	Pilegrowth Tech S R L	Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
WO2014140082A1 (en)	2013-03-13	2014-09-18	Pilegrowth Tech S.R.L.	High efficiency solar cells on silicon substrates

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE793800A (en) *	1972-01-10	1973-05-02	Rca Corp	SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS
US3962716A (en) *	1973-11-12	1976-06-08	Bell Telephone Laboratories, Incorporated	Reduction of dislocations in multilayer structures of zinc-blend materials
US4697202A (en) *	1984-02-02	1987-09-29	Sri International	Integrated circuit having dislocation free substrate
US4631234A (en) *	1985-09-13	1986-12-23	Texas Instruments Incorporated	Germanium hardened silicon substrate

1988
- 1988-03-04 GB GB8805155A patent/GB2215514A/en not_active Withdrawn

Also Published As

Publication number	Publication date
GB2215514A (en)	1989-09-20

Publication	Publication Date	Title
GB8805155D0 (en)	1988-04-07	Semiconductor assembly
GB2234112B (en)	1991-04-24	Semiconductor component
EP0339912A3 (en)	1990-02-07	Semiconductor arrays
GB8710359D0 (en)	1987-06-03	Semiconductor element
GB8803924D0 (en)	1988-03-23	Semiconductor devices
EP0361438A3 (en)	1990-10-24	Polyalkenylphenol compound
KR920007792B1 (en)	1992-09-17	Compound semiconductor element
GB8918867D0 (en)	1989-09-27	Semiconductor element
GB8819949D0 (en)	1988-09-21	Semiconductor devices
GB2198581B (en)	1990-01-24	Semiconductor arrangement
KR910009358B1 (en)	1991-11-12	Semiconductor devices
GB8811583D0 (en)	1988-06-22	Semiconductor devices
GB2221208B (en)	1992-01-15	Form assembly
GB8818957D0 (en)	1988-09-14	Semiconductor devices
GB8817459D0 (en)	1988-08-24	Semiconductor devices
GB8824840D0 (en)	1988-11-30	Semiconductor arrangement
CS892788A1 (en)	1990-09-12	All-controlled semiconductor component
GB8807052D0 (en)	1988-04-27	Semiconductor processes
CA61192S (en)	1988-07-05	Sink
CA61193S (en)	1988-07-05	Sink
CA61191S (en)	1988-07-05	Sink
GB2212977B (en)	1991-01-23	Semiconductor arrangement
KR910000777Y1 (en)	1991-02-08	Bio-rhythem graph
GB8806169D0 (en)	1988-04-13	Assembly
GB8800692D0 (en)	1988-02-10	Hosereel assembly

Legal Events

Date	Code	Title	Description
1991-01-23	732	Registration of transactions, instruments or events in the register (sect. 32/1977)
1992-12-09	WAP	Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)