GB8819949D0 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number: GB8819949D0
Authority: GB; United Kingdom
Prior art keywords: semiconductor devices; semiconductor; devices
Prior art date: 1988-08-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

GB888819949A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

GE Healthcare UK Ltd

Original Assignee

GE Healthcare UK Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-08-23

Filing date

1988-08-23

Publication date

1988-09-21

1988-08-23 Application filed by GE Healthcare UK Ltd filed Critical GE Healthcare UK Ltd

1988-08-23 Priority to GB8819949A priority Critical patent/GB2222306B/en

1988-09-21 Publication of GB8819949D0 publication Critical patent/GB8819949D0/en

1990-02-28 Publication of GB2222306A publication Critical patent/GB2222306A/en

1992-08-12 Application granted granted Critical

1992-08-12 Publication of GB2222306B publication Critical patent/GB2222306B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H10D30/6218—Fin field-effect transistors [FinFET] of the accumulation type

GB8819949A 1988-08-23 1988-08-23 Field effect transistor devices Expired GB2222306B (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
GB8819949A GB2222306B (en)	1988-08-23	1988-08-23	Field effect transistor devices

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB8819949A GB2222306B (en)	1988-08-23	1988-08-23	Field effect transistor devices

Publications (3)

Publication Number	Publication Date
GB8819949D0 true GB8819949D0 (en)	1988-09-21
GB2222306A GB2222306A (en)	1990-02-28
GB2222306B GB2222306B (en)	1992-08-12

Family

ID=10642533

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8819949A Expired GB2222306B (en)	1988-08-23	1988-08-23	Field effect transistor devices

Country Status (1)

Country	Link
GB (1)	GB2222306B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2789931B2 (en) *	1991-05-27	1998-08-27	日本電気株式会社	Semiconductor device
US5828101A (en) *	1995-03-30	1998-10-27	Kabushiki Kaisha Toshiba	Three-terminal semiconductor device and related semiconductor devices
WO1997016854A1 (en) *	1995-11-01	1997-05-09	Amo Gmbh	Semiconductor component with prismatic channel area
DE19846063A1 (en) *	1998-10-07	2000-04-20	Forschungszentrum Juelich Gmbh	Method of manufacturing a double-gate MOSFET
DE10250984A1 (en)	2002-10-29	2004-05-19	Hahn-Meitner-Institut Berlin Gmbh	Field effect transistor and method for its production
DE10339529A1 (en) *	2003-08-21	2005-03-24	Hahn-Meitner-Institut Berlin Gmbh	Vertical nano-transistor, method for its manufacture and memory arrangement
US7652320B2 (en) *	2005-03-03	2010-01-26	Macronix International Co., Ltd.	Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3673471A (en) *	1970-10-08	1972-06-27	Fairchild Camera Instr Co	Doped semiconductor electrodes for mos type devices
EP0166261A3 (en) *	1984-06-27	1989-01-11	Energy Conversion Devices, Inc.	Static field-induced semiconductor devices
DE3504234A1 (en) *	1984-09-06	1986-03-13	Siemens AG, 1000 Berlin und 8000 München	FIELD EFFECT SEMICONDUCTOR COMPONENT
JPS62229873A (en) *	1986-03-29	1987-10-08	Hitachi Ltd	Manufacture of thin film semiconductor device
GB2211022B (en) *	1987-10-09	1991-10-09	Marconi Electronic Devices	A semiconductor device and a process for making the device

1988
- 1988-08-23 GB GB8819949A patent/GB2222306B/en not_active Expired

Also Published As

Publication number	Publication date
GB2222306B (en)	1992-08-12
GB2222306A (en)	1990-02-28

Publication	Publication Date	Title
IL86162A0 (en)	1988-11-15	Customizable semiconductor devices
GB8713440D0 (en)	1987-07-15	Semiconductor device
GB8609337D0 (en)	1986-05-21	Semiconductor devices
GB2213988B (en)	1992-02-05	Semiconductor device
GB8803924D0 (en)	1988-03-23	Semiconductor devices
EP0279605A3 (en)	1989-06-07	Semiconductor device
GB8713386D0 (en)	1987-07-15	Semiconductor device
GB2209870B (en)	1992-02-05	Semiconductor devices
GB8612010D0 (en)	1986-06-25	Semiconductor devices
GB2188479B (en)	1990-05-23	Semiconductor devices
GB8713388D0 (en)	1987-07-15	Semiconductor device
GB8723775D0 (en)	1987-11-11	Semiconductor device
GB8713382D0 (en)	1987-07-15	Semiconductor device
GB2215125B (en)	1991-04-24	Semiconductor device
GB8819949D0 (en)	1988-09-21	Semiconductor devices
EP0334759A3 (en)	1990-01-24	Semiconductor device
GB8918867D0 (en)	1989-09-27	Semiconductor element
EP0346120A3 (en)	1990-07-18	Semiconductor device
KR910009358B1 (en)	1991-11-12	Semiconductor devices
GB8719817D0 (en)	1987-09-30	Semiconductor devices
GB8717734D0 (en)	1987-09-03	Semiconductor device
EP0305121A3 (en)	1990-03-28	Semiconductor device
KR930001219B1 (en)	1993-02-22	Semiconductor device
GB8712971D0 (en)	1987-07-08	Semiconductor device
GB8829161D0 (en)	1989-01-25	Semiconductor device manufacture

Legal Events

Date	Code	Title	Description
1992-09-09	732	Registration of transactions, instruments or events in the register (sect. 32/1977)
1999-12-08	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
2008-06-04	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
2008-09-17	PE20	Patent expired after termination of 20 years	Expiry date: 20080822