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FR3112428A1 - Procédé de formation de contacts passivés pour cellules solaires IBC - Google Patents

Procédé de formation de contacts passivés pour cellules solaires IBC Download PDF

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Publication number
FR3112428A1
FR3112428A1 FR2007382A FR2007382A FR3112428A1 FR 3112428 A1 FR3112428 A1 FR 3112428A1 FR 2007382 A FR2007382 A FR 2007382A FR 2007382 A FR2007382 A FR 2007382A FR 3112428 A1 FR3112428 A1 FR 3112428A1
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France
Prior art keywords
ibc
solar cells
removal
formation
layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR2007382A
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English (en)
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Semco Smartech France SAS
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Semco Smartech France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semco Smartech France SAS filed Critical Semco Smartech France SAS
Priority to FR2007382A priority Critical patent/FR3112428A1/fr
Priority to FR2011026A priority patent/FR3112430A1/fr
Priority to JP2023503072A priority patent/JP2023534501A/ja
Priority to CN202180049702.7A priority patent/CN115803894A/zh
Priority to PH1/2023/550041A priority patent/PH12023550041A1/en
Priority to EP21743470.3A priority patent/EP4179577A1/fr
Priority to US18/003,040 priority patent/US20230253520A1/en
Priority to KR1020237004705A priority patent/KR20230050332A/ko
Priority to CA3188180A priority patent/CA3188180A1/fr
Priority to PCT/EP2021/069370 priority patent/WO2022013167A1/fr
Priority to TW110125592A priority patent/TW202209694A/zh
Publication of FR3112428A1 publication Critical patent/FR3112428A1/fr
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H02S40/22—Light-reflecting or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)

Abstract

Procédé de formation de contacts passivés pour cellules solaires IBC La présente description concerne un procédé comprenant la formation de contacts passivés, pour cellules solaires IBC. Figure pour l'abrégé : Fig. 3

Description

Procédé de formation de contacts passivés pour cellules solaires IBC
La présente description concerne le domaine de cellules solaire et, plus particulièrement, la fabrication de cellules solaires IBC (interdigitées avec contact au dos ou Interdigited Backside Contact).
On connaît de nombreux procédés de fabrication de cellules solaires.
Il existe un besoin d’amélioration des techniques de fabrication des cellules solaires et des panneaux photovoltaïques
Les modes de réalisation décrits pallient tout ou partie des inconvénients des procédés connus de fabrication de cellules solaires.
Les modes de réalisation décrit prévoient la formation de contact passivés pour structure de type IBC.
An embodiment provides a method comprising the formation of passivated contact IBC.
An embodiment provides a comprising the formation of IBC solar cells.
According to an embodiment the method compris e s a multifunctional film stack .
According to an embodiment, t he method compris es the following successive steps:
1. SDE;
2. Tunnel oxide + P+poly layer, masking layer deposition in LPCVD or PECVD process;
3 . Front side wrap around removal (this step can be skipped when applied with PECVD);
4. Trench opening by laser;
5. Texturing;
6. FSF and BSF formation using POCl3;
7. Laser doping on BSF area;
8. PSG & masking layer removal;
9. Annealing;
10. Passivation front;
11. Passivation rear ; and
12. Metallization .
According to an embodiment, the method comprises the following successive steps:
1. SDE / Saw Damage Etching or removal;
2. Tunnel oxide + P+poly layer + PSG layer masking layer deposition in LPCVD or PECVD process;
3. Front side wrap around removal (this step can be skipped when applied with PECVD);
4. Trench opening + Laser doping on BSF (Front Surface Field) by laser;
5. Texturing;
6. FSF (Front Surface Field) and formation using POCl3 (including Annealing);
7. PSG ( Phosphosilicate Glass) & masking layer removal;
8. Passivation f ront;
9. Passivation rear;
10. Metallization.
An embodiment provides a n IBC Structure obtained by the disclosed method.
An embodiment provides an IBC solar cell obtained by the disclosed method.
An embodiment provides a solar panel comprising IBC solar cells.
Ces caractéristiques et avantages, ainsi que d'autres, seront exposés en détail dans la description suivante de modes de réalisation particuliers faite à titre non limitatif en relation avec les figures jointes parmi lesquelles :
la figure 1 illustre, par des vues en coupe, des étapes d’un exemple de procédé de fabrication de cellules solaires usuel ; et
la figure 2 illustre, par des vues en coupe, des étapes d’un mode de réalisation d’un procédé de fabrication de cellules solaires ; et
la figure 3 illustre, par des vues en coupe, des étapes d’un autre mode de réalisation d’un procédé de fabrication de cellules solaires.
De mêmes éléments ont été désignés par de mêmes références dans les différentes figures. En particulier, les éléments structurels et/ou fonctionnels communs aux différents modes de réalisation peuvent présenter les mêmes références et peuvent disposer de propriétés structurelles, dimensionnelles et matérielles identiques.
Par souci de clarté, seuls les étapes et éléments utiles à la compréhension des modes de réalisation décrits ont été représentés et sont détaillés. En particulier, les techniques de mise en œuvre des étapes décrites qui sont en elles-mêmes usuelles n’ont pas été détaillées et on pourra se référer, par exemple, aux techniques et matériaux décrits dans les documents US-B-10,388,804 et US-B-7,633,006 dont les contenus sont incorporés par références dans la présente description.
Sauf précision contraire, lorsque l'on fait référence à deux éléments connectés entre eux, cela signifie directement connectés sans éléments intermédiaires autres que des conducteurs, et lorsque l'on fait référence à deux éléments reliés (en anglais "coupled") entre eux, cela signifie que ces deux éléments peuvent être connectés ou être reliés par l'intermédiaire d'un ou plusieurs autres éléments.
Dans la description qui suit, lorsque l'on fait référence à des qualificatifs de position absolue, tels que les termes "avant", "arrière", "haut", "bas", "gauche", "droite", etc., ou relative, tels que les termes "dessus", "dessous", "supérieur", "inférieur", etc., ou à des qualificatifs d'orientation, tels que les termes "horizontal", "vertical", etc., il est fait référence sauf précision contraire à l'orientation des figures.
Sauf précision contraire, les expressions "environ", "approximativement", "sensiblement", et "de l'ordre de" signifient à 10 % près, de préférence à 5 % près.
Les figures représentent des vues en coupe transversale de plaquette en matériau semiconducteur sur et dans lesquelles sont formées les cellules solaires. Ces vues sont partielles et ne représentent qu’une faible portion de la plaquette.
La figure 1 illustre, par des vues en coupe, des étapes d’un exemple de procédé de fabrication de cellules solaires usuel.
Dans cette réalisation classique, 15 étapes sont nécessaires à partir d’une tranche ou plaquette en matériau semiconducteur jusqu’à la réalisation des métallisations de formation des contacts en face arrière.
The 15 successive steps are :
1. SDE (Saw Damage Etching)
2. Tunnel oxide + Intrinsic poly layer
3. Emitter source layer
4. Laser doping
5. Removing emitter source layer
6. masking layer deposition
7. Front side wrap around removal
8. Texturing
9. masking layer opening for BSF (Back Surface Field)
10. FSF (Front Surface Field) and BSF formation with POCl3
11. PSG (Phosphosilicate Glass) & masking layer removal
12. Annealing
13. Front side passivation
14. Rear side passivation
15. Metallization .
La figure 2 illustre, par des vues en coupe, des étapes d’un mode de réalisation d’un procédé de fabrication de cellules solaires.
Selon ce mode de réalisation, le procédé ne comporte plus que 12 étapes
The disclosed method constitutes an innovative multifunctional film stack for passivated contact IBC (Interdigited Back side Contact) and comprises the following steps:
1. SDE / Saw D amage Etching or removal
2. Tunnel oxide + P+poly layer, masking layer deposition in LPCVD or PECVD process
3. Front side wrap around removal (this step can be skipped when applied with PECVD)
4. Trench opening by laser
5. Texturing
6. FSF(Front Surface Field)and BSF(Back Surface Field)formation using POCl3
7. Laser doping on BSF area
8. PSG (Phosphosilicate Glass)& masking layer removal
9. Annealing
10. Passivation f ront
11. Passivation rear
12. Metallization
Wafer can be B, Ga doped for p-type, P doped for n-type.
Tunnel oxide is formed as first layer .
p-poly layer is formed with B2H6 or BCl3 + SiH4 reaction.
Masking layer can be SiOx , SiOxNy , SiNx , SiC layer.
At least three layers are formed in stack.
These layers are formed by LPCVD or PECVD.
In-situ doped emitter layer is formed, and compensation with laser doped BSF.
Key advantages are:
#2 to #6 steps of the example of Figure 1 are integrated into #2 innovation step.
#7 innovation step is added.
3 less process steps for IBC.
La figure 3 illustre, par des vues en coupe, des étapes d’un autre mode de réalisation d’un procédé de fabrication de cellules solaires.
Selon ce mode de réalisation, le procédé ne comporte plus que 10 étapes.
The disclosed method constitutes an innovative process flow using multifunctional film stack for Passivated contact IBC ( Interdigited Back side Contact) and comprises the following steps:
1. SDE / Saw Damage Etching or removal
2. Tunnel oxide + P+poly layer + PSG layer masking layer deposition in LPCVD or PECVD process
3. Front side wrap around removal (this step can be skipped when applied with PECVD)
4. Trench opening + Laser doping on BSF(Front Surface Field)by laser
5. Texturing
6. FSF(Front Surface Field)and formation using POCl3 (including Annealing)
7. PSG(Phosphosilicate Glass)& masking layer removal
8. Passivation Front
9. Passivation rear
10. Metallization
Wafer can be B, Ga doped for p-type, P doped for n-type.
Tunnel oxide is formed as first layer .
p-poly layer is formed with B2H6 or BCl3 + SiH4 reaction.
PSG layer is formed with PH3+TEOS reaction.
Masking layer can be SiOx , SiOxNy , SiNx , SiC layer, or a combination.
At least three layers are formed in stack.
These layers are formed by LPCVD or PECVD.
In-situ doped emitter layer is formed, and compensation with laser doped BSF .
Key advantages are:
#2 to #6 steps of the example of Figure 1 are integrated into #2 innovation step.
#9 to #10 of the example of Figure 1 are partially integrated to #4 innovation step.
#12 of the example of Figure 1 is integrated to #6 innovation step.
5 less process steps for IBC.
Divers modes de réalisation et variantes ont été décrits. La personne du métier comprendra que certaines caractéristiques de ces divers modes de réalisation et variantes pourraient être combinées, et d’autres variantes apparaîtront à la personne du métier.
Enfin, la mise en oeuvre pratique des modes de réalisation et variantes décrits est à la portée de la personne du métier à partir des indications fonctionnelles données ci-dessus.

Claims (7)

  1. A method comprising the formation of passivated contact IBC.
  2. A method comprising the formation of IBC solar cells.
  3. The method according to claim 1 or 2, using a multifunctional film stack.
  4. The method according to anyone of claims 1 to 3, comprising the following successive steps:
    1. SDE / Saw Damage Etching or removal;
    2. Tunnel oxide + P+poly layer + PSG layer masking layer deposition in LPCVD or PECVD process;
    3. Front side wrap around removal (this step can be skipped when applied with PECVD);
    4. Trench opening + Laser doping on BSF (Front Surface Field) by laser;
    5. Texturing;
    6. FSF (Front Surface Field) and formation using POCl3 (including Annealing);
    7. PSG (Phosphosilicate Glass) & masking layer removal;
    8. Passivation front;
    9. Passivation rear;
    10. Metallization.
  5. An IBC Structure obtained by the method according to anyone of claims 1 to 4.
  6. An IBC solar cell obtained by the method according to anyone of claims 1 to 4.
  7. A solar panel comprising IBC solar cells according to claim 6.
FR2007382A 2020-07-13 2020-07-13 Procédé de formation de contacts passivés pour cellules solaires IBC Pending FR3112428A1 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FR2007382A FR3112428A1 (fr) 2020-07-13 2020-07-13 Procédé de formation de contacts passivés pour cellules solaires IBC
FR2011026A FR3112430A1 (fr) 2020-07-13 2020-10-28 Fabrication de cellules solaires
JP2023503072A JP2023534501A (ja) 2020-07-13 2021-07-12 太陽電池の製造
CN202180049702.7A CN115803894A (zh) 2020-07-13 2021-07-12 太阳能电池的制造
PH1/2023/550041A PH12023550041A1 (en) 2020-07-13 2021-07-12 Solar cell manufacturing
EP21743470.3A EP4179577A1 (fr) 2020-07-13 2021-07-12 Fabrication de cellules solaires
US18/003,040 US20230253520A1 (en) 2020-07-13 2021-07-12 Solar cell manufacture
KR1020237004705A KR20230050332A (ko) 2020-07-13 2021-07-12 태양 전지 제조
CA3188180A CA3188180A1 (fr) 2020-07-13 2021-07-12 Fabrication de cellules solaires
PCT/EP2021/069370 WO2022013167A1 (fr) 2020-07-13 2021-07-12 Fabrication de cellules solaires
TW110125592A TW202209694A (zh) 2020-07-13 2021-07-13 太陽能電池製造

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2007382 2020-07-13
FR2007382A FR3112428A1 (fr) 2020-07-13 2020-07-13 Procédé de formation de contacts passivés pour cellules solaires IBC

Publications (1)

Publication Number Publication Date
FR3112428A1 true FR3112428A1 (fr) 2022-01-14

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FR2007382A Pending FR3112428A1 (fr) 2020-07-13 2020-07-13 Procédé de formation de contacts passivés pour cellules solaires IBC
FR2011026A Pending FR3112430A1 (fr) 2020-07-13 2020-10-28 Fabrication de cellules solaires

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Application Number Title Priority Date Filing Date
FR2011026A Pending FR3112430A1 (fr) 2020-07-13 2020-10-28 Fabrication de cellules solaires

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US (1) US20230253520A1 (fr)
EP (1) EP4179577A1 (fr)
JP (1) JP2023534501A (fr)
KR (1) KR20230050332A (fr)
CN (1) CN115803894A (fr)
CA (1) CA3188180A1 (fr)
FR (2) FR3112428A1 (fr)
PH (1) PH12023550041A1 (fr)
TW (1) TW202209694A (fr)
WO (1) WO2022013167A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115954414A (zh) 2023-02-21 2023-04-11 浙江晶科能源有限公司 一种光伏电池及其制备方法、光伏组件
US20240387762A1 (en) * 2023-05-15 2024-11-21 Maxeon Solar Pte. Ltd. Solar cell emitter region fabrication with differentiated p-type and n-type layouts and incorporating dotted diffusion
CN117690982A (zh) * 2023-12-28 2024-03-12 浙江晶科能源有限公司 太阳能电池及光伏组件

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US3673241A (en) 1968-04-04 1972-06-27 Ciba Geigy Corp Substituted benzaldehyde guanylhydrazones
DE1703599B1 (de) 1968-06-15 1971-10-07 Rheinmetall Gmbh Verfahren und vorrichtung zur bestimmung des abgangsfehler winkels eines geschosses beim verlassen des rohres
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
FR2988908B1 (fr) * 2012-04-03 2015-03-27 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique a contacts interdigites en face arriere
KR102373649B1 (ko) 2015-05-28 2022-03-11 엘지전자 주식회사 태양 전지 및 이의 제조 방법

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EP4179577A1 (fr) 2023-05-17
US20230253520A1 (en) 2023-08-10
JP2023534501A (ja) 2023-08-09
KR20230050332A (ko) 2023-04-14
CA3188180A1 (fr) 2022-01-20
PH12023550041A1 (en) 2024-03-18
FR3112430A1 (fr) 2022-01-14
TW202209694A (zh) 2022-03-01
CN115803894A (zh) 2023-03-14
WO2022013167A1 (fr) 2022-01-20

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