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FR3061607B1 - Dispositif optoelectronique a diodes electroluminescentes - Google Patents

Dispositif optoelectronique a diodes electroluminescentes Download PDF

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Publication number
FR3061607B1
FR3061607B1 FR1663507A FR1663507A FR3061607B1 FR 3061607 B1 FR3061607 B1 FR 3061607B1 FR 1663507 A FR1663507 A FR 1663507A FR 1663507 A FR1663507 A FR 1663507A FR 3061607 B1 FR3061607 B1 FR 3061607B1
Authority
FR
France
Prior art keywords
light emitting
shell
semiconductor element
optoelectronic device
emitting diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1663507A
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English (en)
Other versions
FR3061607A1 (fr
Inventor
Wei Sin Tan
Philippe Gilet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1663507A priority Critical patent/FR3061607B1/fr
Application filed by Aledia filed Critical Aledia
Priority to PCT/EP2017/084781 priority patent/WO2018122358A1/fr
Priority to EP17822342.6A priority patent/EP3563419B1/fr
Priority to JP2019535778A priority patent/JP6872618B2/ja
Priority to CN201780086496.0A priority patent/CN110301047B/zh
Priority to TW106146180A priority patent/TWI745518B/zh
Priority to KR1020197021963A priority patent/KR102501822B1/ko
Priority to US16/474,017 priority patent/US10916579B2/en
Publication of FR3061607A1 publication Critical patent/FR3061607A1/fr
Application granted granted Critical
Publication of FR3061607B1 publication Critical patent/FR3061607B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/813—Quantum wire structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Optical Filters (AREA)

Abstract

L'invention concerne un dispositif optoélectronique (5) comprenant des diodes électroluminescentes (LED), chaque diode électroluminescente comprenant un élément semiconducteur (22) correspondant à un nanofil, un microfil, et/ou une structure pyramidale de taille nanométrique ou micrométrique, et une coque (24) recouvrant au moins partiellement l'élément semiconducteur et adapté à émettre un rayonnement, et, pour chaque diode électroluminescente, un revêtement photoluminescent (28R, 28G, 28B) comprenant un puits quantique unique, des puits quantiques multiples ou une hétérostructure, recouvrant au moins en partie la coque et en contact avec la coque ou avec l'élément semiconducteur et adapté à convertir par pompage optique le rayonnement émis par la coque en un autre rayonnement.
FR1663507A 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes Expired - Fee Related FR3061607B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1663507A FR3061607B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes
EP17822342.6A EP3563419B1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes et procédé de sa fabrication
JP2019535778A JP6872618B2 (ja) 2016-12-29 2017-12-28 発光ダイオードを備えた光電子デバイス
CN201780086496.0A CN110301047B (zh) 2016-12-29 2017-12-28 具有发光二极管的光电设备
PCT/EP2017/084781 WO2018122358A1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes
TW106146180A TWI745518B (zh) 2016-12-29 2017-12-28 具有發光二極體的光電裝置及其製造方法
KR1020197021963A KR102501822B1 (ko) 2016-12-29 2017-12-28 발광다이오드를 구비한 광전자장치
US16/474,017 US10916579B2 (en) 2016-12-29 2017-12-28 Optoelectronic device with light-emitting diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1663507 2016-12-29
FR1663507A FR3061607B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes

Publications (2)

Publication Number Publication Date
FR3061607A1 FR3061607A1 (fr) 2018-07-06
FR3061607B1 true FR3061607B1 (fr) 2019-05-31

Family

ID=59253561

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1663507A Expired - Fee Related FR3061607B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes

Country Status (8)

Country Link
US (1) US10916579B2 (fr)
EP (1) EP3563419B1 (fr)
JP (1) JP6872618B2 (fr)
KR (1) KR102501822B1 (fr)
CN (1) CN110301047B (fr)
FR (1) FR3061607B1 (fr)
TW (1) TWI745518B (fr)
WO (1) WO2018122358A1 (fr)

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FR3096509B1 (fr) * 2019-05-20 2021-05-28 Aledia Dispositif optoelectronique avec diodes electroluminescentes dont une zone dopee integre une portion externe a base d’aluminium et de nitrure de galium
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FR3111236A1 (fr) * 2020-06-03 2021-12-10 Aledia Dispositif électronique pour capture ou émission d’une grandeur physique et procédé de fabrication
KR20210156624A (ko) 2020-06-18 2021-12-27 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법
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Also Published As

Publication number Publication date
EP3563419B1 (fr) 2021-03-03
TW201839969A (zh) 2018-11-01
KR20190099055A (ko) 2019-08-23
CN110301047B (zh) 2023-04-28
CN110301047A (zh) 2019-10-01
FR3061607A1 (fr) 2018-07-06
JP2020504449A (ja) 2020-02-06
EP3563419A1 (fr) 2019-11-06
KR102501822B1 (ko) 2023-02-20
TWI745518B (zh) 2021-11-11
US10916579B2 (en) 2021-02-09
US20190319066A1 (en) 2019-10-17
WO2018122358A1 (fr) 2018-07-05
JP6872618B2 (ja) 2021-05-19

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