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FR2932009B1 - Cellule photovoltaique et substrat de cellule photovoltaique - Google Patents

Cellule photovoltaique et substrat de cellule photovoltaique

Info

Publication number
FR2932009B1
FR2932009B1 FR0853601A FR0853601A FR2932009B1 FR 2932009 B1 FR2932009 B1 FR 2932009B1 FR 0853601 A FR0853601 A FR 0853601A FR 0853601 A FR0853601 A FR 0853601A FR 2932009 B1 FR2932009 B1 FR 2932009B1
Authority
FR
France
Prior art keywords
photovoltaic cell
notably
substrate
transparent
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0853601A
Other languages
English (en)
Other versions
FR2932009A1 (fr
Inventor
Emmanuelle Peter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Priority to FR0853601A priority Critical patent/FR2932009B1/fr
Priority to US12/171,691 priority patent/US20090293945A1/en
Priority to KR1020107026991A priority patent/KR20110014168A/ko
Priority to CN2009801201700A priority patent/CN102047435A/zh
Priority to PCT/FR2009/050984 priority patent/WO2009156640A2/fr
Priority to EP09769481A priority patent/EP2286458A2/fr
Priority to JP2011512178A priority patent/JP2011522433A/ja
Publication of FR2932009A1 publication Critical patent/FR2932009A1/fr
Application granted granted Critical
Publication of FR2932009B1 publication Critical patent/FR2932009B1/fr
Priority to US12/958,569 priority patent/US20110139237A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
FR0853601A 2008-06-02 2008-06-02 Cellule photovoltaique et substrat de cellule photovoltaique Expired - Fee Related FR2932009B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0853601A FR2932009B1 (fr) 2008-06-02 2008-06-02 Cellule photovoltaique et substrat de cellule photovoltaique
US12/171,691 US20090293945A1 (en) 2008-06-02 2008-07-11 Photovoltaic cell and photovoltaic cell substrate
CN2009801201700A CN102047435A (zh) 2008-06-02 2009-05-27 光电池和光电池的基材
PCT/FR2009/050984 WO2009156640A2 (fr) 2008-06-02 2009-05-27 Cellule photovoltaïque et substrat de cellule photovoltaïque
KR1020107026991A KR20110014168A (ko) 2008-06-02 2009-05-27 광전지 및 이를 위한 기재
EP09769481A EP2286458A2 (fr) 2008-06-02 2009-05-27 Cellule photovoltaïque et substrat de cellule photovoltaïque
JP2011512178A JP2011522433A (ja) 2008-06-02 2009-05-27 光起電力セルおよび光起電力セル基板
US12/958,569 US20110139237A1 (en) 2008-06-02 2010-12-02 Photovoltaic cell, and substrate for same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0853601A FR2932009B1 (fr) 2008-06-02 2008-06-02 Cellule photovoltaique et substrat de cellule photovoltaique

Publications (2)

Publication Number Publication Date
FR2932009A1 FR2932009A1 (fr) 2009-12-04
FR2932009B1 true FR2932009B1 (fr) 2010-09-17

Family

ID=40328499

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0853601A Expired - Fee Related FR2932009B1 (fr) 2008-06-02 2008-06-02 Cellule photovoltaique et substrat de cellule photovoltaique

Country Status (7)

Country Link
US (2) US20090293945A1 (fr)
EP (1) EP2286458A2 (fr)
JP (1) JP2011522433A (fr)
KR (1) KR20110014168A (fr)
CN (1) CN102047435A (fr)
FR (1) FR2932009B1 (fr)
WO (1) WO2009156640A2 (fr)

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US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US8759671B2 (en) 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US7998762B1 (en) 2007-11-14 2011-08-16 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US9087943B2 (en) 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US7855089B2 (en) 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
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US8008111B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk copper species treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) * 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US7863074B2 (en) 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US8383450B2 (en) 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US7910399B1 (en) * 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US8741689B2 (en) 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) * 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8003430B1 (en) * 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8344243B2 (en) 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
US8241943B1 (en) 2009-05-08 2012-08-14 Stion Corporation Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
US8372684B1 (en) 2009-05-14 2013-02-12 Stion Corporation Method and system for selenization in fabricating CIGS/CIS solar cells
TW201101514A (en) * 2009-05-18 2011-01-01 First Solar Inc Silicon nitride diffusion barrier layer for cadmium stannate TCO
TW201101513A (en) * 2009-05-18 2011-01-01 First Solar Inc Cadmium stannate TCO structure with diffusion barrier layer and separation layer
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
US8502066B2 (en) * 2009-11-05 2013-08-06 Guardian Industries Corp. High haze transparent contact including insertion layer for solar cells, and/or method of making the same
US20110100446A1 (en) * 2009-11-05 2011-05-05 Guardian Industries Corp. High haze transparent contact including ion-beam treated layer for solar cells, and/or method of making the same
FR2947954A1 (fr) * 2009-12-11 2011-01-14 Commissariat Energie Atomique Cellule texturee a rendement de conversion eleve comportant une zone texturee recouverte par une bi-couche antireflet
WO2011087895A2 (fr) * 2010-01-14 2011-07-21 Pilkington Group Limited Panneau photovoltaïque et procédé de réalisation associé
US11155493B2 (en) * 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
WO2011116097A2 (fr) * 2010-03-18 2011-09-22 First Solar, Inc Dispositif photovoltaïque à couche cristalline
US8142521B2 (en) * 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US20120060923A1 (en) * 2010-03-31 2012-03-15 Zhibo Zhao Photovoltaic device barrier layer
JP2011222687A (ja) * 2010-04-08 2011-11-04 Tosoh Corp 太陽電池
CN102893408B (zh) 2010-05-13 2016-05-11 第一太阳能有限公司 光伏器件导电层
FR2961953B1 (fr) * 2010-06-25 2012-07-13 Saint Gobain Cellule comprenant un matériau photovoltaïque a base de cadmium
FR2961954B1 (fr) * 2010-06-25 2012-07-13 Saint Gobain Cellule comprenant un materiau photovoltaique a base de cadmium
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
US20120067414A1 (en) * 2010-09-22 2012-03-22 Chungho Lee CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8998606B2 (en) 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
US20140305492A1 (en) * 2011-08-10 2014-10-16 Saint-Gobain Glass France Solar module with reduced power loss and process for the production thereof
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
WO2013111681A1 (fr) * 2012-01-27 2013-08-01 株式会社カネカ Substrat avec électrode transparente et son procédé de fabrication
KR101880153B1 (ko) 2012-04-05 2018-07-20 삼성전자주식회사 혼성 금속 산화물 및 그 형성 방법과 상기 혼성 금속 산화물을 포함하는 태양 전지
CN104617178B (zh) * 2015-02-03 2017-04-19 浙江大学 一种紫外探测器及其制备方法
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CN114846627A (zh) * 2020-11-30 2022-08-02 Ａｇｃ株式会社 透明电极基板和太阳能电池

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Also Published As

Publication number Publication date
FR2932009A1 (fr) 2009-12-04
US20090293945A1 (en) 2009-12-03
WO2009156640A3 (fr) 2011-01-06
CN102047435A (zh) 2011-05-04
US20110139237A1 (en) 2011-06-16
EP2286458A2 (fr) 2011-02-23
JP2011522433A (ja) 2011-07-28
KR20110014168A (ko) 2011-02-10
WO2009156640A2 (fr) 2009-12-30

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Effective date: 20140228