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ATE471573T1 - Frontelektrode auf zinkoxidbasis mit yttrium für ein pv-element oder dergleichen - Google Patents

Frontelektrode auf zinkoxidbasis mit yttrium für ein pv-element oder dergleichen

Info

Publication number
ATE471573T1
ATE471573T1 AT07862852T AT07862852T ATE471573T1 AT E471573 T1 ATE471573 T1 AT E471573T1 AT 07862852 T AT07862852 T AT 07862852T AT 07862852 T AT07862852 T AT 07862852T AT E471573 T1 ATE471573 T1 AT E471573T1
Authority
AT
Austria
Prior art keywords
yttrium
zinc oxide
front electrode
example embodiments
oxide
Prior art date
Application number
AT07862852T
Other languages
English (en)
Inventor
Alexey Krasnov
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Application granted granted Critical
Publication of ATE471573T1 publication Critical patent/ATE471573T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/02—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Thermistors And Varistors (AREA)
  • Conductive Materials (AREA)
AT07862852T 2007-01-08 2007-12-13 Frontelektrode auf zinkoxidbasis mit yttrium für ein pv-element oder dergleichen ATE471573T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/650,564 US8334452B2 (en) 2007-01-08 2007-01-08 Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
PCT/US2007/025484 WO2008085264A1 (en) 2007-01-08 2007-12-13 Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like

Publications (1)

Publication Number Publication Date
ATE471573T1 true ATE471573T1 (de) 2010-07-15

Family

ID=39276103

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07862852T ATE471573T1 (de) 2007-01-08 2007-12-13 Frontelektrode auf zinkoxidbasis mit yttrium für ein pv-element oder dergleichen

Country Status (7)

Country Link
US (2) US8334452B2 (de)
EP (1) EP2100335B1 (de)
AT (1) ATE471573T1 (de)
DE (1) DE602007007241D1 (de)
ES (1) ES2347494T3 (de)
PL (1) PL2100335T3 (de)
WO (1) WO2008085264A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105299A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194155A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194157A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US8501522B2 (en) * 2008-05-30 2013-08-06 Gtat Corporation Intermetal stack for use in a photovoltaic cell
US7915522B2 (en) 2008-05-30 2011-03-29 Twin Creeks Technologies, Inc. Asymmetric surface texturing for use in a photovoltaic cell and method of making
US8212246B2 (en) * 2008-08-13 2012-07-03 Board Of Regents, The University Of Texas System N-type doping in metal oxides and metal chalcogenides by electrochemical methods
US8022291B2 (en) * 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
TW201027779A (en) * 2008-11-19 2010-07-16 First Solar Inc Photovoltaic devices including heterojunctions
JP5612685B2 (ja) * 2009-08-03 2014-10-22 スリーエム イノベイティブ プロパティズ カンパニー 光学的に透明な導電金属又は合金薄フィルムの形成プロセス及びこれから製造するフィルム
KR20110014913A (ko) * 2009-08-06 2011-02-14 삼성전자주식회사 태양 전지 모듈 및 그 제조 방법
WO2011025715A1 (en) * 2009-08-24 2011-03-03 First Solar, Inc. Doped transparent conductive oxide
US20110132450A1 (en) * 2009-11-08 2011-06-09 First Solar, Inc. Back Contact Deposition Using Water-Doped Gas Mixtures
FR2972446B1 (fr) * 2011-03-09 2017-11-24 Saint Gobain Substrat pour cellule photovoltaique
US20130081688A1 (en) * 2011-10-03 2013-04-04 Intermolecular, Inc. Back contacts for thin film solar cells
US11367800B1 (en) 2012-04-20 2022-06-21 Magnolia Solar, Inc. Optically-thin III-V solar cells and methods for constructing the same
US9614108B1 (en) * 2012-04-20 2017-04-04 Magnolia Solar, Inc. Optically-thin chalcogenide solar cells
KR101920768B1 (ko) 2012-09-11 2018-11-22 엘지디스플레이 주식회사 광전소자 및 이의 제조 방법
US9365450B2 (en) * 2012-12-27 2016-06-14 Intermolecular, Inc. Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
JP2017151408A (ja) * 2016-02-22 2017-08-31 株式会社タムロン 赤外線透過膜、光学膜、反射防止膜、光学部品、光学系及び撮像装置
US11908965B1 (en) * 2023-03-16 2024-02-20 Lumenco, Llc Solar photovoltaic (PV) panels or devices with infrared (IR) reflecting films for enhanced efficiency
US20250145522A1 (en) * 2023-11-06 2025-05-08 Agp Worldwide Operations Gmbh Automotive glazing with functional coating on textured glass

Family Cites Families (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL127148C (de) 1963-12-23
US4155781A (en) 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4162505A (en) 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
US4213798A (en) 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
US4378460A (en) 1981-08-31 1983-03-29 Rca Corporation Metal electrode for amorphous silicon solar cells
US4554727A (en) 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
JPS59175166A (ja) 1983-03-23 1984-10-03 Agency Of Ind Science & Technol アモルファス光電変換素子
US4598306A (en) 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
JPH0680837B2 (ja) 1983-08-29 1994-10-12 通商産業省工業技術院長 光路を延長した光電変換素子
US4689438A (en) 1984-10-17 1987-08-25 Sanyo Electric Co., Ltd. Photovoltaic device
JPS61108176A (ja) 1984-11-01 1986-05-26 Fuji Electric Co Ltd 粗面化方法
JPS61141185U (de) 1985-02-25 1986-09-01
JPH0750793B2 (ja) 1985-06-04 1995-05-31 工業技術院長 薄膜光電変換素子
US4663495A (en) 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
GB2188924B (en) 1986-04-08 1990-05-09 Glaverbel Matted glass, process of producing matted glass, photo-voltaic cell incorporating a glass sheet, and process of manufacturing such a cell
JPS62179165U (de) 1986-04-30 1987-11-13
DE3704880A1 (de) 1986-07-11 1988-01-21 Nukem Gmbh Transparentes, leitfaehiges schichtsystem
AU616736B2 (en) 1988-03-03 1991-11-07 Asahi Glass Company Limited Amorphous oxide film and article having such film thereon
EP0364780B1 (de) 1988-09-30 1997-03-12 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Sonnenzelle mit einer durchsichtigen Elektrode
JPH02106978A (ja) 1988-10-15 1990-04-19 Sanyo Electric Co Ltd 集積型太陽電池の製造方法
US4940495A (en) 1988-12-07 1990-07-10 Minnesota Mining And Manufacturing Company Photovoltaic device having light transmitting electrically conductive stacked films
JP3117446B2 (ja) 1989-06-15 2000-12-11 株式会社半導体エネルギー研究所 酸化物導電膜の成膜加工方法
DE4024308C2 (de) 1989-07-31 1993-12-02 Central Glass Co Ltd Wärmeisolierglas mit dielektrischem Vielschichtenüberzug
DE69027590T2 (de) 1989-08-01 1996-12-05 Asahi Glass Co Ltd Verfahren zur Herstellung von Schichten auf basis von Siliziumdioxyd mittels DC Sputtern und Target dafür
WO1992007386A1 (en) 1990-10-15 1992-04-30 United Solar Systems Corporation Monolithic solar cell array and method for its manufacture
DE4126738A1 (de) 1990-12-11 1992-06-17 Claussen Nils Zr0(pfeil abwaerts)2(pfeil abwaerts)-haltiger keramikformkoerper
US5171411A (en) 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
US5256858A (en) 1991-08-29 1993-10-26 Tomb Richard H Modular insulation electrically heated building panel with evacuated chambers
IL103614A (en) * 1991-11-22 1998-09-24 Basf Ag Carboxamides for controlling botrytis and certain novel such compounds
US5699035A (en) 1991-12-13 1997-12-16 Symetrix Corporation ZnO thin-film varistors and method of making the same
JP2974485B2 (ja) 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
SE9301441D0 (sv) * 1993-04-28 1993-04-28 Mamoun Muhammed Controlled morphology particles
US5650019A (en) 1993-09-30 1997-07-22 Canon Kabushiki Kaisha Solar cell module having a surface coating material of three-layered structure
JP3029178B2 (ja) 1994-04-27 2000-04-04 キヤノン株式会社 薄膜半導体太陽電池の製造方法
GB9500330D0 (en) 1995-01-09 1995-03-01 Pilkington Plc Coatings on glass
FR2730990B1 (fr) 1995-02-23 1997-04-04 Saint Gobain Vitrage Substrat transparent a revetement anti-reflets
DE69629613T2 (de) 1995-03-22 2004-06-17 Toppan Printing Co. Ltd. Mehrschichtiger, elektrisch leitender Film, transparentes Elektrodensubstrat und Flüssigkristallanzeige die diesen benutzen
JP3431776B2 (ja) 1995-11-13 2003-07-28 シャープ株式会社 太陽電池用基板の製造方法および太陽電池用基板加工装置
US6433913B1 (en) 1996-03-15 2002-08-13 Gentex Corporation Electro-optic device incorporating a discrete photovoltaic device and method and apparatus for making same
GB9619134D0 (en) 1996-09-13 1996-10-23 Pilkington Plc Improvements in or related to coated glass
US6406639B2 (en) * 1996-11-26 2002-06-18 Nippon Sheet Glass Co., Ltd. Method of partially forming oxide layer on glass substrate
US6123824A (en) 1996-12-13 2000-09-26 Canon Kabushiki Kaisha Process for producing photo-electricity generating device
DE19713215A1 (de) 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
JP3805889B2 (ja) 1997-06-20 2006-08-09 株式会社カネカ 太陽電池モジュールおよびその製造方法
JPH1146006A (ja) 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
US6222117B1 (en) 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
EP1063317B1 (de) 1998-03-05 2003-07-30 Asahi Glass Company Ltd. Sputtertarget, transparenter leitender film und verfahren zu dessen herstellung
JP4010053B2 (ja) 1998-04-15 2007-11-21 旭硝子株式会社 太陽電池用カバーガラス及びその製造方法並びに太陽電池
US6344608B2 (en) 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
FR2781062B1 (fr) 1998-07-09 2002-07-12 Saint Gobain Vitrage Vitrage a proprietes optiques et/ou energetiques electrocommandables
US6077722A (en) 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
CA2341629A1 (en) 1998-08-26 2000-03-09 Hodaka Norimatsu Photovoltaic device
JP2000091084A (ja) 1998-09-16 2000-03-31 Trustees Of Princeton Univ ホ―ル注入性改良電極
DE19848751C1 (de) * 1998-10-22 1999-12-16 Ver Glaswerke Gmbh Schichtsystem für transparente Substrate
FR2791147B1 (fr) 1999-03-19 2002-08-30 Saint Gobain Vitrage Dispositif electrochimique du type dispositif electrocommandable a proprietes optiques et/ou energetiques variables
TW463528B (en) 1999-04-05 2001-11-11 Idemitsu Kosan Co Organic electroluminescence element and their preparation
NO314525B1 (no) 1999-04-22 2003-03-31 Thin Film Electronics Asa Fremgangsmåte ved fremstillingen av organiske halvledende innretninger i tynnfilm
US6187824B1 (en) 1999-08-25 2001-02-13 Nyacol Nano Technologies, Inc. Zinc oxide sol and method of making
DE19958878B4 (de) 1999-12-07 2012-01-19 Saint-Gobain Glass Deutschland Gmbh Dünnschicht-Solarzelle
JP4434411B2 (ja) 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機ｅｌ発光装置およびその製造方法
US6524647B1 (en) 2000-03-24 2003-02-25 Pilkington Plc Method of forming niobium doped tin oxide coatings on glass and coated glass formed thereby
TW532048B (en) 2000-03-27 2003-05-11 Idemitsu Kosan Co Organic electroluminescence element
US7267879B2 (en) 2001-02-28 2007-09-11 Guardian Industries Corp. Coated article with silicon oxynitride adjacent glass
US6576349B2 (en) 2000-07-10 2003-06-10 Guardian Industries Corp. Heat treatable low-E coated articles and methods of making same
KR100748818B1 (ko) 2000-08-23 2007-08-13 이데미쓰 고산 가부시키가이샤 유기 전기발광 표시장치
US6784361B2 (en) 2000-09-20 2004-08-31 Bp Corporation North America Inc. Amorphous silicon photovoltaic devices
JP2002260448A (ja) 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP2002170431A (ja) 2000-11-29 2002-06-14 Idemitsu Kosan Co Ltd 電極基板およびその製造方法
EP1376155A1 (de) 2001-02-07 2004-01-02 Kyoto Semiconductor Corporation Strahlungsdetektor und strahlungsdetektionselement
KR100768176B1 (ko) 2001-02-07 2007-10-17 삼성에스디아이 주식회사 광학적 전기적 특성을 지닌 기능성 박막
US6774300B2 (en) 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
WO2002091483A2 (en) 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
WO2003019598A1 (en) 2001-08-27 2003-03-06 Northwestern University High work function transparent conducting oxides as anodes for organic light-emitting diodes
US6589657B2 (en) 2001-08-31 2003-07-08 Von Ardenne Anlagentechnik Gmbh Anti-reflection coatings and associated methods
JP4162447B2 (ja) 2001-09-28 2008-10-08 三洋電機株式会社 光起電力素子及び光起電力装置
US6936347B2 (en) 2001-10-17 2005-08-30 Guardian Industries Corp. Coated article with high visible transmission and low emissivity
FR2832706B1 (fr) 2001-11-28 2004-07-23 Saint Gobain Substrat transparent muni d'une electrode
US6830817B2 (en) 2001-12-21 2004-12-14 Guardian Industries Corp. Low-e coating with high visible transmission
KR100835920B1 (ko) 2001-12-27 2008-06-09 엘지디스플레이 주식회사 터치패널 일체형 액정패널
US7037869B2 (en) 2002-01-28 2006-05-02 Guardian Industries Corp. Clear glass composition
US7144837B2 (en) 2002-01-28 2006-12-05 Guardian Industries Corp. Clear glass composition with high visible transmittance
US7169722B2 (en) 2002-01-28 2007-01-30 Guardian Industries Corp. Clear glass composition with high visible transmittance
US6919133B2 (en) 2002-03-01 2005-07-19 Cardinal Cg Company Thin film coating having transparent base layer
TWI254080B (en) 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
FR2844136B1 (fr) 2002-09-03 2006-07-28 Corning Inc Materiau utilisable dans la fabrication de dispositifs d'affichage lumineux en particulier de diodes electroluminescentes organiques
FR2844364B1 (fr) 2002-09-11 2004-12-17 Saint Gobain Substrat diffusant
AU2002350883A1 (en) * 2002-11-07 2004-06-03 Saint-Gobain Glass France System of layers for transparent substrates and coated substrate
US7141863B1 (en) 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
TW583466B (en) 2002-12-09 2004-04-11 Hannstar Display Corp Structure of liquid crystal display
US6975067B2 (en) 2002-12-19 2005-12-13 3M Innovative Properties Company Organic electroluminescent device and encapsulation method
TWI232066B (en) 2002-12-25 2005-05-01 Au Optronics Corp Manufacturing method of organic light emitting diode for reducing reflection of external light
JP4241446B2 (ja) 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
WO2004102677A1 (ja) 2003-05-13 2004-11-25 Asahi Glass Company, Limited 太陽電池用透明導電性基板およびその製造方法
JP3993530B2 (ja) * 2003-05-16 2007-10-17 株式会社神戸製鋼所 Ａｇ−Ｂｉ系合金スパッタリングターゲットおよびその製造方法
US20040244829A1 (en) * 2003-06-04 2004-12-09 Rearick Brian K. Coatings for encapsulation of photovoltaic cells
US7087309B2 (en) 2003-08-22 2006-08-08 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Coated article with tin oxide, silicon nitride and/or zinc oxide under IR reflecting layer and corresponding method
US7153579B2 (en) 2003-08-22 2006-12-26 Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A, (C.R.V.C.) Heat treatable coated article with tin oxide inclusive layer between titanium oxide and silicon nitride
JP4761706B2 (ja) 2003-12-25 2011-08-31 京セラ株式会社 光電変換装置の製造方法
CA2556730C (en) * 2004-02-25 2013-12-24 Afg Industries, Inc. Heat stabilized sub-stoichiometric dielectrics
US8524051B2 (en) * 2004-05-18 2013-09-03 Centre Luxembourg de Recherches pour le Verre et al Ceramique S. A. (C.R.V.C.) Coated article with oxidation graded layer proximate IR reflecting layer(s) and corresponding method
US20050257824A1 (en) 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
FR2874607B1 (fr) * 2004-08-31 2008-05-02 Saint Gobain Vitrage feuillete muni d'un empilement de couches minces reflechissant les infrarouges et/ou le rayonnement solaire et d'un moyen de chauffage.
US7419725B2 (en) * 2004-09-01 2008-09-02 Guardian Industries Corp. Coated article with low-E coating including IR reflecting layer(s) and corresponding method
US7700869B2 (en) 2005-02-03 2010-04-20 Guardian Industries Corp. Solar cell low iron patterned glass and method of making same
US7531239B2 (en) 2005-04-06 2009-05-12 Eclipse Energy Systems Inc Transparent electrode
US7743630B2 (en) 2005-05-05 2010-06-29 Guardian Industries Corp. Method of making float glass with transparent conductive oxide (TCO) film integrally formed on tin bath side of glass and corresponding product
US7700870B2 (en) 2005-05-05 2010-04-20 Guardian Industries Corp. Solar cell using low iron high transmission glass with antimony and corresponding method
US8093491B2 (en) 2005-06-03 2012-01-10 Ferro Corporation Lead free solar cell contacts
US7597964B2 (en) 2005-08-02 2009-10-06 Guardian Industries Corp. Thermally tempered coated article with transparent conductive oxide (TCO) coating
JP2007067194A (ja) 2005-08-31 2007-03-15 Fujifilm Corp 有機光電変換素子、および積層型光電変換素子
US20070184573A1 (en) 2006-02-08 2007-08-09 Guardian Industries Corp., Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device
US20070193624A1 (en) 2006-02-23 2007-08-23 Guardian Industries Corp. Indium zinc oxide based front contact for photovoltaic device and method of making same
US7557053B2 (en) 2006-03-13 2009-07-07 Guardian Industries Corp. Low iron high transmission float glass for solar cell applications and method of making same
US8648252B2 (en) 2006-03-13 2014-02-11 Guardian Industries Corp. Solar cell using low iron high transmission glass and corresponding method
US20080047602A1 (en) 2006-08-22 2008-02-28 Guardian Industries Corp. Front contact with high-function TCO for use in photovoltaic device and method of making same
US20080047603A1 (en) 2006-08-24 2008-02-28 Guardian Industries Corp. Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
WO2008036769A2 (en) 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
US20080105299A1 (en) 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US7964788B2 (en) 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080302414A1 (en) 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
WO2008063305A2 (en) 2006-11-02 2008-05-29 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8203073B2 (en) 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105298A1 (en) 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8012317B2 (en) 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105293A1 (en) 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
US20080223436A1 (en) 2007-03-15 2008-09-18 Guardian Industries Corp. Back reflector for use in photovoltaic device
US20080308145A1 (en) 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
US7888594B2 (en) 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194155A1 (en) 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194157A1 (en) 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same

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EP2100335B1 (de) 2010-06-16
WO2008085264A1 (en) 2008-07-17
EP2100335A1 (de) 2009-09-16
US20130074922A1 (en) 2013-03-28
ES2347494T3 (es) 2010-10-29
US20080163929A1 (en) 2008-07-10
DE602007007241D1 (de) 2010-07-29
US8936842B2 (en) 2015-01-20
PL2100335T3 (pl) 2010-11-30
US8334452B2 (en) 2012-12-18

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