[go: up one dir, main page]

FR2965975B1 - Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble - Google Patents

Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble

Info

Publication number
FR2965975B1
FR2965975B1 FR1058246A FR1058246A FR2965975B1 FR 2965975 B1 FR2965975 B1 FR 2965975B1 FR 1058246 A FR1058246 A FR 1058246A FR 1058246 A FR1058246 A FR 1058246A FR 2965975 B1 FR2965975 B1 FR 2965975B1
Authority
FR
France
Prior art keywords
semiconductor material
soil
self
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1058246A
Other languages
English (en)
Other versions
FR2965975A1 (fr
Inventor
Georgios Katsaros
Franceschi Silvano De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1058246A priority Critical patent/FR2965975B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to CN2011800597182A priority patent/CN103262224A/zh
Priority to US13/878,501 priority patent/US20130193484A1/en
Priority to EP11769841.5A priority patent/EP2628172A1/fr
Priority to JP2013532211A priority patent/JP2013543264A/ja
Priority to KR1020137011414A priority patent/KR20130101075A/ko
Priority to PCT/EP2011/067504 priority patent/WO2012049071A1/fr
Publication of FR2965975A1 publication Critical patent/FR2965975A1/fr
Application granted granted Critical
Publication of FR2965975B1 publication Critical patent/FR2965975B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un dispositif à au moins un transistor sur un substrat (1) en un premier matériau semiconducteur, chaque transistor (20, 20') comportant une électrode de grille (5), dite grille, deux électrodes conductrices (3, 4), un îlot (2) en second matériau semiconducteur, incrusté dans le substrat (1), définissant une région apte à former un canal, dite région de canal, et une couche isolante (6) séparant la grille (5) des deux électrodes (3, 4) et de la région de canal, caractérisé en ce que la région de canal est à l'intérieur de l'îlot (2) et est en contact électrique direct avec au moins une des deux électrodes conductrices (3, 4).
FR1058246A 2010-10-11 2010-10-11 Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble Expired - Fee Related FR2965975B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1058246A FR2965975B1 (fr) 2010-10-11 2010-10-11 Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble
US13/878,501 US20130193484A1 (en) 2010-10-11 2011-10-06 Field-effect transistor on a self-assembled semiconductor well
EP11769841.5A EP2628172A1 (fr) 2010-10-11 2011-10-06 Transistor a effet de champ sur ilot de materiau semiconducteur auto-assemble
JP2013532211A JP2013543264A (ja) 2010-10-11 2011-10-06 自己組織化された半導体井戸（半導体ウェル）上の電界効果トランジスタ
CN2011800597182A CN103262224A (zh) 2010-10-11 2011-10-06 自组装半导体阱上的场效应晶体管
KR1020137011414A KR20130101075A (ko) 2010-10-11 2011-10-06 자체 조립된 반도체 우물 상의 전계 효과 트랜지스터
PCT/EP2011/067504 WO2012049071A1 (fr) 2010-10-11 2011-10-06 Transistor a effet de champ sur ilot de materiau semiconducteur auto-assemble

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1058246A FR2965975B1 (fr) 2010-10-11 2010-10-11 Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble

Publications (2)

Publication Number Publication Date
FR2965975A1 FR2965975A1 (fr) 2012-04-13
FR2965975B1 true FR2965975B1 (fr) 2012-12-21

Family

ID=43823725

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1058246A Expired - Fee Related FR2965975B1 (fr) 2010-10-11 2010-10-11 Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble

Country Status (7)

Country Link
US (1) US20130193484A1 (fr)
EP (1) EP2628172A1 (fr)
JP (1) JP2013543264A (fr)
KR (1) KR20130101075A (fr)
CN (1) CN103262224A (fr)
FR (1) FR2965975B1 (fr)
WO (1) WO2012049071A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611582B (zh) * 2013-04-10 2018-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US10340220B2 (en) * 2015-08-26 2019-07-02 Intel Corporation Compound lateral resistor structures for integrated circuitry

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159416A (en) * 1990-04-27 1992-10-27 Nec Corporation Thin-film-transistor having schottky barrier
DE10025264A1 (de) * 2000-05-22 2001-11-29 Max Planck Gesellschaft Feldeffekt-Transistor auf der Basis von eingebetteten Clusterstrukturen und Verfahren zu seiner Herstellung
US6515335B1 (en) * 2002-01-04 2003-02-04 International Business Machines Corporation Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
JP2003264290A (ja) * 2002-03-08 2003-09-19 Fujitsu Ltd 半導体装置及びその製造方法
US6927414B2 (en) * 2003-06-17 2005-08-09 International Business Machines Corporation High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
US7029964B2 (en) * 2003-11-13 2006-04-18 International Business Machines Corporation Method of manufacturing a strained silicon on a SiGe on SOI substrate
JP2006210854A (ja) * 2005-01-31 2006-08-10 Toshiba Corp 半導体装置及びその製造方法
JP2007158300A (ja) * 2005-12-07 2007-06-21 Korea Electronics Telecommun 低いショットキー障壁貫通トランジスタ及びその製造方法
FR2897202B1 (fr) * 2006-02-08 2008-09-12 St Microelectronics Crolles 2 Transistor mos a barriere de schottky sur film semi-conducteur entierement appauvri et procede de fabrication d'un tel transistor.
US7781801B2 (en) * 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
US8106381B2 (en) * 2006-10-18 2012-01-31 Translucent, Inc. Semiconductor structures with rare-earths

Also Published As

Publication number Publication date
KR20130101075A (ko) 2013-09-12
FR2965975A1 (fr) 2012-04-13
JP2013543264A (ja) 2013-11-28
CN103262224A (zh) 2013-08-21
EP2628172A1 (fr) 2013-08-21
WO2012049071A1 (fr) 2012-04-19
US20130193484A1 (en) 2013-08-01

Similar Documents

Publication Publication Date Title
JP2011054949A5 (ja) 半導体装置
JP2013514632A5 (fr)
EP4210106A3 (fr) Appareil d'affichage
JPWO2020003047A5 (ja) 半導体装置
JP2010157636A5 (fr)
SG10201805060XA (en) Semiconductor device and method of manufacturing the same
JP2013042121A5 (fr)
EP1998374A3 (fr) Dispositif de semi-conducteur disposant d'une couche de semi-conducteur d'oxyde et son procédé de fabrication
JP2014225713A5 (fr)
JP2015130487A5 (fr)
JP2015119178A5 (fr)
JP2011181917A5 (fr)
JP2014059574A5 (ja) 液晶表示装置、携帯情報端末、携帯電話
WO2009013967A1 (fr) Dispositif semi-conducteur
JP2014157357A5 (ja) 液晶表示装置
JP2014033200A5 (fr)
JP2013131758A5 (fr)
JP2014063179A5 (fr)
JP2020120107A5 (ja) 半導体装置
JP2015057850A5 (fr)
WO2009011220A1 (fr) Dispositif semi-conducteur, procédé de fabrication d'un dispositif semi-conducteur, dispositif d'affichage et procédé de fabrication d'un dispositif d'affichage
JP2016034040A5 (ja) 表示装置
JP2012080092A5 (fr)
JP2011077509A5 (ja) トランジスタ
JP2013065719A (ja) 電力用半導体装置

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 6

ST Notification of lapse

Effective date: 20170630