FR2758333B1 - Methode et dispositif utilisant un photoresist d'arf - Google Patents

Methode et dispositif utilisant un photoresist d'arf

Info

Publication number: FR2758333B1
Authority: FR; France
Prior art keywords: arf photoresist; arf; photoresist
Prior art date: 1997-01-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR9800168A

Other languages

English (en)

Other versions

FR2758333A1 (fr

Inventor

Jae Chang Jung

Chi Hyeong Roh

Joo On Park

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SK Hynix Inc

Original Assignee

Hyundai Electronics Industries Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-01-10

Filing date

1998-01-09

Publication date

2003-05-02

1998-01-09 Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd

1998-07-17 Publication of FR2758333A1 publication Critical patent/FR2758333A1/fr

2003-05-02 Application granted granted Critical

2003-05-02 Publication of FR2758333B1 publication Critical patent/FR2758333B1/fr

2018-01-09 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

Physics & Mathematics (AREA)
Spectroscopy & Molecular Physics (AREA)
General Physics & Mathematics (AREA)
Materials For Photolithography (AREA)
Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Polymerisation Methods In General (AREA)

FR9800168A 1997-01-10 1998-01-09 Methode et dispositif utilisant un photoresist d'arf Expired - Fee Related FR2758333B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019970000472A KR100225956B1 (ko)	1997-01-10	1997-01-10	아민을 도입한 에이알에프 감광막 수지

Publications (2)

Publication Number	Publication Date
FR2758333A1 FR2758333A1 (fr)	1998-07-17
FR2758333B1 true FR2758333B1 (fr)	2003-05-02

Family

ID=19494392

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9800168A Expired - Fee Related FR2758333B1 (fr)	1997-01-10	1998-01-09	Methode et dispositif utilisant un photoresist d'arf

Country Status (9)

Country	Link
US (1)	US6045967A (fr)
JP (1)	JP3506594B2 (fr)
KR (1)	KR100225956B1 (fr)
CN (1)	CN1112603C (fr)
DE (1)	DE19800633B4 (fr)
FR (1)	FR2758333B1 (fr)
GB (1)	GB2321060B (fr)
NL (1)	NL1008001C2 (fr)
TW (1)	TW476868B (fr)

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KR100334387B1 (ko) *	1997-12-31	2002-11-22	주식회사 하이닉스반도체	공중합체수지와그제조방법및이수지를이용한포토레지스트
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KR19990081722A (ko)	1998-04-30	1999-11-15	김영환	카르복실기 함유 지환족 유도체 및 그의 제조방법
KR100376983B1 (ko)	1998-04-30	2003-08-02	주식회사 하이닉스반도체	포토레지스트중합체및이를이용한미세패턴의형성방법
TW444027B (en) *	1998-06-30	2001-07-01	Ind Tech Res Inst	Ring-opened polymer prepared from pericyclic olefin and photosensitive composition containing the polymer
KR100403325B1 (ko)	1998-07-27	2004-03-24	주식회사 하이닉스반도체	포토레지스트중합체및이를이용한포토레지스트조성물
JP3587743B2 (ja)	1998-08-26	2004-11-10	株式会社ハイニックスセミコンダクター	フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
KR20000015014A (ko)	1998-08-26	2000-03-15	김영환	신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
KR100448860B1 (ko) *	1998-08-26	2005-02-23	주식회사 하이닉스반도체	포토레지스트단량체,그의공중합체및이를포함하는포토레지스트조성물
US6569971B2 (en)	1998-08-27	2003-05-27	Hyundai Electronics Industries Co., Ltd.	Polymers for photoresist and photoresist compositions using the same
KR100400293B1 (ko) *	1998-11-27	2004-03-22	주식회사 하이닉스반도체	포토레지스트단량체,그의중합체및이를이용한포토레지스트조성물
US6475904B2 (en) *	1998-12-03	2002-11-05	Advanced Micro Devices, Inc.	Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques
KR100301062B1 (ko) *	1999-07-29	2001-09-22	윤종용	백본이 환상구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물
KR100647380B1 (ko) *	1999-07-30	2006-11-17	주식회사 하이닉스반도체	신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR20010016970A (ko) *	1999-08-06	2001-03-05	박종섭	신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100425442B1 (ko) *	1999-08-24	2004-03-30	삼성전자주식회사	감광성 중합체 및 이를 포함하는 화학 증폭형포토레지스트 조성물
US6265131B1 (en) *	2000-04-03	2001-07-24	Everlight Usa. Inc.	Alicyclic dissolution inhibitors and positive potoresist composition containing the same
US6294309B1 (en) *	2000-06-30	2001-09-25	Everlight Usa, Inc.	Positive photoresist composition containing alicyclic dissolution inhibitors
AU2002255786A1 (en) *	2001-02-25	2002-09-12	Shipley Company, L.L.C.	Novel polymers and photoresist compositions comprising same
KR100557556B1 (ko)	2001-10-25	2006-03-03	주식회사 하이닉스반도체	산 확산 방지용 포토레지스트 첨가제 및 이를 함유하는포토레지스트 조성물
JP4502115B2 (ja) *	2004-04-23	2010-07-14	信越化学工業株式会社	含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法
JP4525440B2 (ja) *	2005-04-20	2010-08-18	Ｊｓｒ株式会社	感放射線性樹脂組成物
US8092628B2 (en)	2008-10-31	2012-01-10	Brewer Science Inc.	Cyclic olefin compositions for temporary wafer bonding
US8771927B2 (en)	2009-04-15	2014-07-08	Brewer Science Inc.	Acid-etch resistant, protective coatings

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NL128164C (fr) *
US3370047A (en) *	1964-09-03	1968-02-20	Union Carbide Corp	Pour point depressants and lubricating compositions thereof
NL6914466A (fr) *	1969-09-24	1971-03-26
GB1335095A (en) *	1971-01-14	1973-10-24	Kodak Ltd	Polycondensation copolymers
JPS5818369B2 (ja) *	1973-09-05	1983-04-12	ジェイエスアール株式会社	ノルボルネンカルボンサンアミドオヨビ／マタハイミドルイノ（キヨウ）ジユウゴウタイノセイゾウホウホウ
US4106943A (en) *	1973-09-27	1978-08-15	Japan Synthetic Rubber Co., Ltd.	Photosensitive cross-linkable azide containing polymeric composition
US4491628A (en) *	1982-08-23	1985-01-01	International Business Machines Corporation	Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3721741A1 (de) *	1987-07-01	1989-01-12	Basf Ag	Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
DE68915148T2 (de) *	1988-02-17	1994-08-18	Tosoh Corp	Fotoresist-zusammensetzung.
JPH0251511A (ja) *	1988-08-15	1990-02-21	Mitsui Petrochem Ind Ltd	極性基含有環状オレフイン系共重合体およびその製法
DE3922546A1 (de) *	1989-07-08	1991-01-17	Hoechst Ag	Verfahren zur herstellung von cycloolefinpolymeren
US5252427A (en) *	1990-04-10	1993-10-12	E. I. Du Pont De Nemours And Company	Positive photoresist compositions
DE69114675T2 (de) *	1990-06-06	1996-06-13	Mitsui Petrochemical Industries, Ltd., Tokio/Tokyo	Polyolefin harzzusammensetzung.
JPH0499967A (ja) *	1990-08-20	1992-03-31	Yokogawa Electric Corp	実効値直流変換装置
JP3000745B2 (ja) *	1991-09-19	2000-01-17	富士通株式会社	レジスト組成物とレジストパターンの形成方法
JPH05297591A (ja) *	1992-04-20	1993-11-12	Fujitsu Ltd	ポジ型放射線レジストとレジストパターンの形成方法
US5705503A (en) *	1995-05-25	1998-01-06	Goodall; Brian Leslie	Addition polymers of polycycloolefins containing functional substituents
JP3804138B2 (ja) *	1996-02-09	2006-08-02	Ｊｓｒ株式会社	ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
RU2194295C2 (ru) *	1996-03-07	2002-12-10	З Би. Эф. Гудрич Кампэни	Фоторезистная композиция и полимер
US5843624A (en) *	1996-03-08	1998-12-01	Lucent Technologies Inc.	Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5763556A (en) *	1996-05-21	1998-06-09	Exxon Chemical Patents Inc.	Copolymers of ethylene and geminally disubstituted olefins
KR100261022B1 (ko) *	1996-10-11	2000-09-01	윤종용	화학증폭형 레지스트 조성물
KR100211548B1 (ko) *	1996-12-20	1999-08-02	김영환	원자외선용 감광막 공중합체 및 그 제조방법
KR100265597B1 (ko) *	1996-12-30	2000-09-15	김영환	Arf 감광막 수지 및 그 제조방법
KR100220953B1 (ko) *	1996-12-31	1999-10-01	김영환	아미드 또는 이미드를 도입한 ArF 감광막 수지

1997
- 1997-01-10 KR KR1019970000472A patent/KR100225956B1/ko not_active Expired - Fee Related
- 1997-12-31 TW TW086120047A patent/TW476868B/zh not_active IP Right Cessation
1998
- 1998-01-06 GB GB9800194A patent/GB2321060B/en not_active Expired - Fee Related
- 1998-01-07 US US09/003,780 patent/US6045967A/en not_active Expired - Lifetime
- 1998-01-08 JP JP00253598A patent/JP3506594B2/ja not_active Expired - Fee Related
- 1998-01-09 NL NL1008001A patent/NL1008001C2/nl not_active IP Right Cessation
- 1998-01-09 CN CN98100324A patent/CN1112603C/zh not_active Expired - Fee Related
- 1998-01-09 FR FR9800168A patent/FR2758333B1/fr not_active Expired - Fee Related
- 1998-01-09 DE DE19800633A patent/DE19800633B4/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US6045967A (en)	2000-04-04
DE19800633A1 (de)	1998-07-16
CN1112603C (zh)	2003-06-25
JPH10207058A (ja)	1998-08-07
NL1008001A1 (nl)	1998-07-13
KR19980065458A (ko)	1998-10-15
CN1191333A (zh)	1998-08-26
JP3506594B2 (ja)	2004-03-15
FR2758333A1 (fr)	1998-07-17
GB9800194D0 (en)	1998-03-04
GB2321060A (en)	1998-07-15
TW476868B (en)	2002-02-21
DE19800633B4 (de)	2007-03-08
GB2321060B (en)	2001-04-18
NL1008001C2 (nl)	1998-11-17
KR100225956B1 (ko)	1999-10-15

Publication	Publication Date	Title
FR2757868B1 (fr)	2003-11-14	Methode et dispositif utilisant un photoresist d'arf
FR2758333B1 (fr)	2003-05-02	Methode et dispositif utilisant un photoresist d'arf
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Legal Events

Date	Code	Title	Description
2009-11-27	ST	Notification of lapse	Effective date: 20091030