FI20070496A0 - Valoa säteilevä diodi - Google Patents

Valoa säteilevä diodi

Info

Publication number: FI20070496A0
Authority: FI; Finland
Prior art keywords: light emitting; emitting diode; diode; light; emitting
Prior art date: 2007-06-20

Application number

FI20070496A

Other languages

English (en)

Swedish (sv)

Other versions

FI121902B (fi

Original Assignee

Optogan Oy

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-06-20

Filing date

2007-06-20

Publication date

2007-06-20

2007-06-20 Application filed by Optogan Oy filed Critical Optogan Oy

2007-06-20 Publication of FI20070496A0 publication Critical patent/FI20070496A0/fi

2007-06-20 Priority to FI20070496A priority Critical patent/FI121902B/fi

2008-06-09 Priority to EP08775463A priority patent/EP2165375A1/en

2008-06-09 Priority to RU2010101276/28A priority patent/RU2462791C2/ru

2008-06-09 Priority to US12/667,330 priority patent/US8198648B2/en

2008-06-09 Priority to JP2010512725A priority patent/JP2010530628A/ja

2008-06-09 Priority to PCT/FI2008/050338 priority patent/WO2008155452A1/en

2008-06-09 Priority to CN2008800205288A priority patent/CN101681971B/zh

2008-06-09 Priority to HK10108887.7A priority patent/HK1142461B/xx

2008-06-09 Priority to KR1020107001289A priority patent/KR20100050464A/ko

2008-06-20 Priority to TW097122991A priority patent/TW200908396A/zh

2011-05-31 Application granted granted Critical

2011-05-31 Publication of FI121902B publication Critical patent/FI121902B/fi

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

FI20070496A 2007-06-20 2007-06-20 Valoa säteilevä diodi FI121902B (fi)

Priority Applications (10)

Application Number	Priority Date	Filing Date	Title
FI20070496A FI121902B (fi)	2007-06-20	2007-06-20	Valoa säteilevä diodi
JP2010512725A JP2010530628A (ja)	2007-06-20	2008-06-09	発光ダイオード
RU2010101276/28A RU2462791C2 (ru)	2007-06-20	2008-06-09	Светоизлучающий диод
US12/667,330 US8198648B2 (en)	2007-06-20	2008-06-09	Light emitting diode chip
EP08775463A EP2165375A1 (en)	2007-06-20	2008-06-09	Light emitting diode
PCT/FI2008/050338 WO2008155452A1 (en)	2007-06-20	2008-06-09	Light emitting diode
CN2008800205288A CN101681971B (zh)	2007-06-20	2008-06-09	发光二极管
HK10108887.7A HK1142461B (en)	2007-06-20	2008-06-09	Light emitting diode
KR1020107001289A KR20100050464A (ko)	2007-06-20	2008-06-09	발광 다이오드
TW097122991A TW200908396A (en)	2007-06-20	2008-06-20	Light emitting diode

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FI20070496A FI121902B (fi)	2007-06-20	2007-06-20	Valoa säteilevä diodi
FI20070496		2007-06-20

Publications (2)

Publication Number	Publication Date
FI20070496A0 true FI20070496A0 (fi)	2007-06-20
FI121902B FI121902B (fi)	2011-05-31

Family

ID=38212350

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FI20070496A FI121902B (fi)	2007-06-20	2007-06-20	Valoa säteilevä diodi

Country Status (9)

Country	Link
US (1)	US8198648B2 (fi)
EP (1)	EP2165375A1 (fi)
JP (1)	JP2010530628A (fi)
KR (1)	KR20100050464A (fi)
CN (1)	CN101681971B (fi)
FI (1)	FI121902B (fi)
RU (1)	RU2462791C2 (fi)
TW (1)	TW200908396A (fi)
WO (1)	WO2008155452A1 (fi)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN111863853A (zh) *	2019-04-24	2020-10-30	深圳第三代半导体研究院	一种垂直集成单元二极管芯片

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWD153348S (zh) *	2011-12-28	2013-05-01	晶元光電股份有限公司	發光二極體陣列
TWI527260B (zh) *	2008-11-19	2016-03-21	廣鎵光電股份有限公司	發光元件結構及其半導體晶圓結構
KR101093120B1 (ko)	2009-11-16	2011-12-13	서울옵토디바이스주식회사	전류분산을 위한 전극 연장부들을 갖는 발광 다이오드
KR101625125B1 (ko) *	2009-12-29	2016-05-27	서울바이오시스 주식회사	전극 연장부들을 갖는 발광 다이오드
JP5170325B2 (ja) *	2010-07-23	2013-03-27	日亜化学工業株式会社	発光素子
WO2012020346A1 (en) *	2010-08-10	2012-02-16	Koninklijke Philips Electronics N.V.	Shunting layer arrangement for leds
TWD149351S (zh) *	2011-10-24	2012-09-21	晶元光電股份有限公司	發光二極體陣列
TWD153900S (zh) *	2011-10-24	2013-06-01	晶元光電股份有限公司	發光二極體陣列
TWD149349S (zh) *	2011-10-24	2012-09-21	晶元光電股份有限公司	發光二極體陣列
TWD149348S (zh) *	2011-10-24	2012-09-21	晶元光電股份有限公司	發光二極體陣列
TWD149350S (zh) *	2011-10-24	2012-09-21	晶元光電股份有限公司	發光二極體陣列
TWD152510S (zh) *	2012-01-19	2013-03-21	晶元光電股份有限公司	發光二極體
TWD152511S (zh) *	2012-01-19	2013-03-21	晶元光電股份有限公司	發光二極體陣列
TWD153350S (zh) *	2012-04-27	2013-05-01	晶元光電股份有限公司	發光二極體
USD687396S1 (en) *	2012-09-06	2013-08-06	Epistar Corporation	Light-emitting diode array
TWD154431S (zh) *	2012-10-03	2013-07-01	晶元光電股份有限公司	發光二極體
TW201511362A (zh) *	2013-09-09	2015-03-16	Lextar Electronics Corp	發光二極體晶片
USD719112S1 (en) *	2013-11-22	2014-12-09	Epistar Corporation	Light-emitting diode device
KR102182024B1 (ko) *	2014-07-01	2020-11-23	엘지이노텍 주식회사	발광 소자
KR20160025455A (ko)	2014-08-27	2016-03-08	서울바이오시스 주식회사	발광 소자 및 이의 제조 방법
WO2016032193A1 (ko) *	2014-08-27	2016-03-03	서울바이오시스 주식회사	발광 소자 및 이의 제조 방법
CN111048639B (zh) *	2019-01-31	2022-06-24	深圳第三代半导体研究院	一种正装集成单元发光二极管
CN111863802A (zh) *	2019-04-24	2020-10-30	深圳第三代半导体研究院	一种垂直集成单元二极管芯片
CN111048638A (zh) *	2019-04-25	2020-04-21	深圳第三代半导体研究院	一种垂直集成单元二极管芯片
CN113036009B (zh) *	2019-12-25	2022-07-05	深圳第三代半导体研究院	一种薄膜垂直集成单元二极管芯片
EP4184597A4 (en) *	2020-07-17	2024-08-07	Seoul Viosys Co., Ltd.	Deep ultraviolet light-emitting diode

Family Cites Families (18)

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Publication number	Priority date	Publication date	Assignee	Title
US6784463B2 (en)	1997-06-03	2004-08-31	Lumileds Lighting U.S., Llc	III-Phospide and III-Arsenide flip chip light-emitting devices
US6307218B1 (en)	1998-11-20	2001-10-23	Lumileds Lighting, U.S., Llc	Electrode structures for light emitting devices
US6614056B1 (en) *	1999-12-01	2003-09-02	Cree Lighting Company	Scalable led with improved current spreading structures
JP4501234B2 (ja) *	2000-06-28	2010-07-14	日亜化学工業株式会社	窒化物半導体素子
US7102158B2 (en) *	2000-10-23	2006-09-05	General Electric Company	Light-based system for detecting analytes
JP4616491B2 (ja)	2001-03-21	2011-01-19	星和電機株式会社	窒化ガリウム系化合物半導体発光素子
US6618418B2 (en) *	2001-11-15	2003-09-09	Xerox Corporation	Dual III-V nitride laser structure with reduced thermal cross-talk
TW516248B (en) *	2001-12-21	2003-01-01	Epitech Technology Corp	Nitride light emitting diode with spiral-shaped metal electrode
US6828596B2 (en)	2002-06-13	2004-12-07	Lumileds Lighting U.S., Llc	Contacting scheme for large and small area semiconductor light emitting flip chip devices
US6958498B2 (en) *	2002-09-27	2005-10-25	Emcore Corporation	Optimized contact design for flip-chip LED
TWI222756B (en)	2002-11-12	2004-10-21	Epitech Corp Ltd	Lateral current blocking light emitting diode and method of making the same
RU2231171C1 (ru) *	2003-04-30	2004-06-20	Закрытое акционерное общество "Инновационная фирма "ТЕТИС"	Светоизлучающий диод
US20050133806A1 (en)	2003-12-17	2005-06-23	Hui Peng	P and N contact pad layout designs of GaN based LEDs for flip chip packaging
US7285801B2 (en) *	2004-04-02	2007-10-23	Lumination, Llc	LED with series-connected monolithically integrated mesas
JP2006086516A (ja)	2004-08-20	2006-03-30	Showa Denko Kk	半導体発光素子の製造方法
TWI246210B (en)	2005-04-28	2005-12-21	Epitech Corp Ltd	Lateral current blocking light emitting diode and method for manufacturing the same
US20060267043A1 (en) *	2005-05-27	2006-11-30	Emerson David T	Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
JP4947954B2 (ja) *	2005-10-31	2012-06-06	スタンレー電気株式会社	発光素子

2007
- 2007-06-20 FI FI20070496A patent/FI121902B/fi not_active IP Right Cessation
2008
- 2008-06-09 US US12/667,330 patent/US8198648B2/en not_active Expired - Fee Related
- 2008-06-09 WO PCT/FI2008/050338 patent/WO2008155452A1/en not_active Ceased
- 2008-06-09 JP JP2010512725A patent/JP2010530628A/ja active Pending
- 2008-06-09 CN CN2008800205288A patent/CN101681971B/zh not_active Expired - Fee Related
- 2008-06-09 EP EP08775463A patent/EP2165375A1/en not_active Withdrawn
- 2008-06-09 RU RU2010101276/28A patent/RU2462791C2/ru not_active IP Right Cessation
- 2008-06-09 KR KR1020107001289A patent/KR20100050464A/ko not_active Withdrawn
- 2008-06-20 TW TW097122991A patent/TW200908396A/zh unknown

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN111863853A (zh) *	2019-04-24	2020-10-30	深圳第三代半导体研究院	一种垂直集成单元二极管芯片

Also Published As

Publication number	Publication date
KR20100050464A (ko)	2010-05-13
RU2010101276A (ru)	2011-07-27
RU2462791C2 (ru)	2012-09-27
JP2010530628A (ja)	2010-09-09
CN101681971A (zh)	2010-03-24
CN101681971B (zh)	2012-09-19
HK1142461A1 (en)	2010-12-03
FI121902B (fi)	2011-05-31
TW200908396A (en)	2009-02-16
WO2008155452A1 (en)	2008-12-24
US20100163910A1 (en)	2010-07-01
EP2165375A1 (en)	2010-03-24
US8198648B2 (en)	2012-06-12

Publication	Publication Date	Title
FI20070496A0 (fi)	2007-06-20	Valoa säteilevä diodi
EP2458654A4 (en)	2016-01-20	LIGHT-EMITTING DIODE
PL3392920T3 (pl)	2022-02-21	Urządzenie emitujące światło
EP2286142A4 (en)	2012-04-04	LED DOWNLIGHT
EP2296204A4 (en)	2011-07-27	LIGHT-EMITTING ITEM
EP2286141A4 (en)	2012-03-21	Led lighting fixture
EP2371182A4 (en)	2013-03-06	LIGHT-EMITTING ITEM
IL204616A0 (en)	2010-11-30	Light emitting diode recessed light fixture
EP2264791A4 (en)	2013-10-30	ILLUMINATION DEVICE
EP2301054A4 (en)	2014-01-08	LIGHT-EMITTING COMPONENT
EP2246409A4 (en)	2012-05-30	LIGHT-EMITTING COMPONENT
EP2219233A4 (en)	2013-12-11	LIGHT-EMITTING COMPONENT
PL2272105T3 (pl)	2016-09-30	Chip diody elektroluminescencyjnej
EP2197047A4 (en)	2014-07-09	LIGHT-EMITTING ARRANGEMENT
EP2172983A4 (en)	2011-07-27	LIGHT-EMITTING DEVICE
EP2315263A4 (en)	2014-08-20	LIGHT-EMITTING DEVICE
EP2282112A4 (en)	2012-03-14	DIVIDED LED LAMP
EP2237332A4 (en)	2011-11-30	LIGHT-EMITTING DEVICE
EP2232595A4 (en)	2011-06-22	LEUCHTDIODENKAPSELUNG
BRPI0924046A2 (pt)	2018-06-05	aparelho de iluminação usando diodo emissor de luz.
EP2131629A4 (en)	2012-05-30	LIGHT-EMITTING COMPONENT
DE602007000718D1 (de)	2009-04-30	Lichtausstrahlende Heizvorrichtung
EP2232596A4 (en)	2011-03-02	LIGHT SOURCE SUBJECT TO DOWN CONVERSION WITH UNIFORM WAVE LENGTH EMISSION
FR2926947B1 (fr)	2015-11-27	Source lumineuse a diodes led
EP2257122A4 (en)	2014-11-05	Light emitting device

Legal Events

Date	Code	Title	Description
2011-05-31	FG	Patent granted	Ref document number: 121902 Country of ref document: FI
2014-01-15	MM	Patent lapsed

Date

Code

Title

Description

2011-05-31

Patent granted

Ref document number: 121902

Country of ref document: FI

2014-01-15

Patent lapsed

FI20070496A0 - Valoa säteilevä diodi - Google Patents

Info

Links

Classifications

Priority Applications (10)

Applications Claiming Priority (2)

Publications (2)

Family

ID=38212350

Family Applications (1)

Country Status (9)

Cited By (1)

Families Citing this family (26)

Family Cites Families (18)

Cited By (1)

Also Published As

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Legal Events