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FI20040787A7 - Yksinäiskiteen kasvatusmenetelmä - Google Patents

Yksinäiskiteen kasvatusmenetelmä

Info

Publication number
FI20040787A7
FI20040787A7 FI20040787A FI20040787A FI20040787A7 FI 20040787 A7 FI20040787 A7 FI 20040787A7 FI 20040787 A FI20040787 A FI 20040787A FI 20040787 A FI20040787 A FI 20040787A FI 20040787 A7 FI20040787 A7 FI 20040787A7
Authority
FI
Finland
Prior art keywords
single crystal
crystal growth
growth method
growth
crystal
Prior art date
Application number
FI20040787A
Other languages
English (en)
Swedish (sv)
Other versions
FI120546B (fi
Inventor
Daisuke Wakabayashi
Toshio Anbe
Masao Saitoh
Original Assignee
Mitsubishi Materials Corp
Mitsubishi Material Silicon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3125444A external-priority patent/JP2732723B2/ja
Priority claimed from JP3099329A external-priority patent/JP2735960B2/ja
Priority claimed from JP3138048A external-priority patent/JP2726773B2/ja
Application filed by Mitsubishi Materials Corp, Mitsubishi Material Silicon filed Critical Mitsubishi Materials Corp
Publication of FI20040787A7 publication Critical patent/FI20040787A7/fi
Application granted granted Critical
Publication of FI120546B publication Critical patent/FI120546B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FI20040787A 1991-04-26 2004-06-08 Yksinäiskiteen kasvatusmenetelmä FI120546B (fi)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP12544491 1991-04-26
JP3125444A JP2732723B2 (ja) 1991-04-26 1991-04-26 液面温度制御方法
JP3099329A JP2735960B2 (ja) 1991-04-30 1991-04-30 液面制御方法
JP9932991 1991-04-30
JP3138048A JP2726773B2 (ja) 1991-06-10 1991-06-10 シリコン単結晶引き上げ方法
JP13804891 1991-06-10
PCT/JP1991/001790 WO1992019797A1 (fr) 1991-04-26 1991-12-27 Procede de tirage de cristal unique
JP9101790 1991-12-27

Publications (2)

Publication Number Publication Date
FI20040787A7 true FI20040787A7 (fi) 2004-06-08
FI120546B FI120546B (fi) 2009-11-30

Family

ID=27308924

Family Applications (2)

Application Number Title Priority Date Filing Date
FI925866A FI120102B (fi) 1991-04-26 1992-12-23 Yksinäiskiteen kasvatusmenetelmä
FI20040787A FI120546B (fi) 1991-04-26 2004-06-08 Yksinäiskiteen kasvatusmenetelmä

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FI925866A FI120102B (fi) 1991-04-26 1992-12-23 Yksinäiskiteen kasvatusmenetelmä

Country Status (6)

Country Link
US (1) US5408952A (fi)
EP (2) EP0536405B1 (fi)
KR (1) KR100237848B1 (fi)
DE (2) DE69133236T2 (fi)
FI (2) FI120102B (fi)
WO (1) WO1992019797A1 (fi)

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US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
US5746828A (en) * 1996-01-16 1998-05-05 General Signal Corporation Temperature control system for growing high-purity monocrystals
JPH09221386A (ja) * 1996-02-08 1997-08-26 Komatsu Electron Metals Co Ltd 単結晶引上装置
US6071340A (en) * 1996-02-28 2000-06-06 General Signal Technology Corporation Apparatus for melt-level detection in Czochralski crystal growth systems
DE69601424T2 (de) * 1996-06-27 1999-06-02 Wacker Siltronic Gesellschaft Fuer Halbleitermaterialien Ag, 84489 Burghausen Verfahren und Vorrichtung zur Steuerung des Kristallwachstums
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
JP2991162B2 (ja) * 1997-07-18 1999-12-20 日本電気株式会社 プロセスシミュレーション方法、プロセスシミュレータ及びプロセスシミュレーションプログラムを記録した記録媒体
EP0903428A3 (de) 1997-09-03 2000-07-19 Leybold Systems GmbH Einrichtung und Verfahren für die Bestimmung von Durchmessern eines Kristalls
US6340392B1 (en) 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
DE19806949A1 (de) * 1998-02-19 1999-08-26 Leybold Systems Gmbh Verfahren zum Steuern von Kristallzüchtungsprozessen
US5968263A (en) * 1998-04-01 1999-10-19 Memc Electronic Materials, Inc. Open-loop method and system for controlling growth of semiconductor crystal
US6776840B1 (en) * 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
JP4548306B2 (ja) 2005-10-31 2010-09-22 株式会社Sumco シリコン単結晶の製造方法
JP4784401B2 (ja) 2006-05-30 2011-10-05 株式会社Ｓｕｍｃｏ シリコン単結晶の育成プロセスにおける融液の液面位置監視装置
US8012255B2 (en) * 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
US20100024717A1 (en) 2008-07-31 2010-02-04 Benno Orschel Reversed action diameter control in a semiconductor crystal growth system
US8221545B2 (en) 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front
KR101415370B1 (ko) * 2011-08-31 2014-07-07 주식회사 엘지실트론 잉곳 성장 장치 및 잉곳 제조 방법
KR101335538B1 (ko) * 2012-07-18 2013-12-03 주식회사 엘지실트론 단결정 실리콘 잉곳 제조 장치 및 방법
DE102013002471B4 (de) 2013-02-13 2016-08-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Bestimmung der Schmelzhöhe und zur Regulation der Erstarrung und Schmelzung einer Schmelze in einem Tiegel
KR101638486B1 (ko) * 2015-12-08 2016-07-11 웅진에너지 주식회사 단결정 잉곳 성장장치의 온도 프로파일 설정방법
CN105951175A (zh) * 2016-05-30 2016-09-21 上海超硅半导体有限公司 单晶硅生长过程中粘壁硅的去除方法
CN111139520A (zh) * 2018-11-05 2020-05-12 上海新昇半导体科技有限公司 一种直拉法引晶方法
CN109972201B (zh) * 2019-04-07 2020-09-11 浙江晶盛机电股份有限公司 用于直拉法硅单晶生长过程的晶体直径控制方法
US11414778B2 (en) * 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot
WO2022177910A1 (en) * 2021-02-16 2022-08-25 Globalwafers Co., Ltd. Methods and systems of capturing transient thermal responses of regions of crystal pullers
CN113235165B (zh) * 2021-04-26 2022-10-14 上海大学 一种Fe1-xTMxS单晶材料的制备方法
CN118777217B (zh) * 2024-07-11 2024-12-20 南通科技职业学院 一种蔬菜中有机磷农药残留量的快速检测方法

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Also Published As

Publication number Publication date
KR930701643A (ko) 1993-06-12
KR100237848B1 (ko) 2000-01-15
US5408952A (en) 1995-04-25
EP0536405A4 (en) 1995-11-15
DE69132009D1 (de) 2000-04-06
EP0911430A1 (en) 1999-04-28
FI925866L (fi) 1992-12-23
EP0536405A1 (en) 1993-04-14
EP0536405B1 (en) 2000-03-01
DE69133236D1 (de) 2003-05-15
FI925866A0 (fi) 1992-12-23
FI120102B (fi) 2009-06-30
DE69133236T2 (de) 2004-02-26
WO1992019797A1 (fr) 1992-11-12
DE69132009T2 (de) 2000-08-03
FI120546B (fi) 2009-11-30
EP0911430B1 (en) 2003-04-09

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