ES2662956B1 - PROCEDURE FOR THE RECOVERY OF METAL TANK OF ELECTROLYTIC CONDENSERS - Google Patents
PROCEDURE FOR THE RECOVERY OF METAL TANK OF ELECTROLYTIC CONDENSERS Download PDFInfo
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- ES2662956B1 ES2662956B1 ES201631166A ES201631166A ES2662956B1 ES 2662956 B1 ES2662956 B1 ES 2662956B1 ES 201631166 A ES201631166 A ES 201631166A ES 201631166 A ES201631166 A ES 201631166A ES 2662956 B1 ES2662956 B1 ES 2662956B1
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- 238000000034 method Methods 0.000 title claims description 29
- 238000011084 recovery Methods 0.000 title claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 39
- 229910052715 tantalum Inorganic materials 0.000 claims description 35
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 25
- 239000003990 capacitor Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 22
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 239000007787 solid Substances 0.000 claims description 17
- 239000003638 chemical reducing agent Substances 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910001868 water Inorganic materials 0.000 claims description 12
- 238000007885 magnetic separation Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 7
- 230000005484 gravity Effects 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000010792 electronic scrap Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- OAVRWNUUOUXDFH-UHFFFAOYSA-H 2-hydroxypropane-1,2,3-tricarboxylate;manganese(2+) Chemical compound [Mn+2].[Mn+2].[Mn+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O OAVRWNUUOUXDFH-UHFFFAOYSA-H 0.000 claims description 3
- 238000005188 flotation Methods 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 239000011564 manganese citrate Substances 0.000 claims description 3
- 235000014872 manganese citrate Nutrition 0.000 claims description 3
- 229940097206 manganese citrate Drugs 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 229910052748 manganese Inorganic materials 0.000 description 7
- 238000004064 recycling Methods 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 235000015165 citric acid Nutrition 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 235000010755 mineral Nutrition 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002696 manganese Chemical class 0.000 description 2
- RGVLTEMOWXGQOS-UHFFFAOYSA-L manganese(2+);oxalate Chemical compound [Mn+2].[O-]C(=O)C([O-])=O RGVLTEMOWXGQOS-UHFFFAOYSA-L 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- -1 C u Chemical class 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000560 biocompatible material Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Manufacture And Refinement Of Metals (AREA)
Description
p r o c e d im ie n t o pa r a la r e c u p e r a c ió n de t á n t a l o m eta l dep r o c e d e n t o f t o f th e r e c tio n t t t t
c o n d e n s a d o r e s e l e c t r o l ít ic o sc o n d a n d o r e r e s
d e s c r ip c ió nd e s c r ip c io n
s e c t o r y o b je t o de la in v e n c ió ns e c t o r y o b t in in v e n c tio n
El procedimiento objeto de la presente invención se enmarca en el sector de la recuperación de metales valiosos a partir de residuos de aparatos eléctricos y electrónicos, más especialmente del tántalo de los condensadores.The process object of the present invention is part of the field of recovery of valuable metals from waste electrical and electronic equipment, more especially tantalum condensers.
El procedimiento incluye varias etapas, siendo especialmente importantes la trituración del material oscuro que comprende tántalo metal y Mn02 y las condiciones de reducción de este último compuesto para obtener el tántalo metal.The process includes several steps, being particularly important the grinding of the dark material comprising tantalum metal and Mn02 and the conditions of reduction of the latter compound to obtain the metal tantalum.
e s ta d o d e la té c n ic ae s ta d o d the tea c n ic a
Actualmente se descartan al año entre 20 y 50 toneladas de residuos de aparatos eléctricos y electrónicos en el mundo. Debido a la importancia y escasez de algunos de los metales y materias primas que contienen estos residuos, es interesante su aprovechamiento. Teniendo en cuenta esto, la Comisión Europea (CE) publicó en 2011 [Documento COM (2011) 25 final "Abordar los retos de los mercados de productos básicos y de las materias primas”; 2/2/2011] un documento en el que aparecía una clasificación de catorce materiales por ser su situación especialmente significativa y crítica, entre los que figuraba el tantalo.Currently, between 20 and 50 tons of waste electrical and electronic equipment are discarded in the world every year. Due to the importance and scarcity of some of the metals and raw materials that contain this waste, its use is interesting. Taking this into account, the European Commission (EC) published in 2011 [Document COM (2011) 25 final "Addressing the challenges of commodity and commodity markets"; 2/2/2011] a document in which there was a classification of fourteen materials because their situation was especially significant and critical, among which was the tango.
Existen técnicas de recogida y tecnologías de reciclado bastante avanzadas para algunas aplicaciones de metales preciosos (Pt, Pd, Au, Ag) por lo que se consiguen porcentajes de reciclado superiores al 50% para estos elementos. Para las tierras raras así como para Ta, Ga e ln el porcentaje de reciclado es menor al 1%, a pesar de ser materiales críticos según la CE.There are collection techniques and quite advanced recycling technologies for some precious metals applications (Pt, Pd, A u , Ag) so recycling percentages higher than 50% are obtained for these elements. For rare earths as well as for Ta, Ga and ln the percentage of recycling is less than 1%, despite being critical materials according to the EC.
El tántalo presenta una abundancia del 0,0001% (1 ppm) en la corteza terrestre. Algunas de sus propiedades físicas vienen dadas en la siguiente tabla: Tantalum has an abundance of 0.0001% (1 ppm) in the earth's crust. Some of its physical properties are given in the following table:
Tabla 1. Propiedades físicas del TántaloTable 1. Physical properties of Tantalum
A temperatura alta es atacado por 02 y por Ios halógenos; además es capaz de combinarse con la mayoría de no metales. Queda pasivado por un recubrimiento de óxido, lo que le aporta resistencia a la corrosión. Es inerte a Ios ácidos no oxidantes y Ios álcalis fundidos lo atacan a temperaturas elevadas. Su máximo y más estable estado de oxidación es 5. En estados de oxidación inferiores suele formar “clústers” hexanuclares con enlaces metal-metal [Housecroft C. E., Sharpe A. G. Química Inorgánica ; Pearson Educación S.A., 2006. pp.654-658].At high temperature it is attacked by 02 and by the halogens; It is also able to combine with most non-metals. It is passivated by an oxide coating, which gives it resistance to corrosion. E s inert to acids I I I I nonoxidizing and molten alkali attack at elevated temperatures. S or maximum and more stable oxidation state is 5. In lower oxidation states tends to form "clusters" hexanuclares with metal-metal bonds [Housecroft CE, Sharpe AG Inorganic Chemistry; Pearson Education SA, 2006. pp.654-658].
El tántalo se encuentra principalmente en la naturaleza en una serie isomorfa de minerales que contienen óxidos de tántalo, niobio, hierro y manganeso, y especialmente en un mineral compuesto por colombita y tantalita, de color negro o marrón muy oscuro, más conocido como coltán. Las escorias de la metalurgia del estaño (Tailandia, Malasia, Brasil) constituyen una fuente no primaria de Ta, previamente concentradas pirometalúrgicamente para elevar su contenido de Ta205. Otra fuente de Ta se encuentra en depósitos pegmatíticos (un tipo de roca ígnea), tanto en canteras a cielo abierto en Australia, como subterráneas en Canadá, de Ios que se extrae por voladura y trituración y se concentra posteriormente por gravedad.Tantalum is found mainly in nature in an isomorphic series of minerals containing oxides of tantalum, niobium, iron and manganese, and especially in a mineral composed of colombite and tantalite, black or very dark brown, better known as coltan. The tin metallurgy slag (Thailand, Malaysia, Brazil) is a non-primary source of Ta, previously concentrated pyrometallurgically to raise its Ta205 content. Another source of Ta is found in pegmatitic deposits (a type of igneous rock), both in open-pit quarries in Australia, and underground in Canada, from which it is extracted by blasting and crushing and then concentrated by gravity.
Los tamaños atómicos semejantes de Nb y Ta debidos a la contracción de Ios lantánidos, hacen que se encuentren juntos en la naturaleza formando el niobatotantalato de hierro y manganeso (Fe, Mn)(Nb, Ta)206. Este compuesto es el constituyente del coltán. Debido a la importancia actual del tántalo en la tecnología, se han tenido que poner a punto métodos para separarlo del niobio. Actualmente, una vez separado el Ta del Nb, se reduce el heptafluorotantalato, K2TaF7, con sodio. Este método fue utilizado primero por Siemens & Halske AG a principios del siglo veinte, y se ha ido mejorando con el paso del tiempo. El reactor se introduce en un horno de arco eléctrico y se calienta por debajo de 1000oC. Es necesario controlar la temperatura, el diluyente y la agitación porque de ellas depende la calidad del tántalo. Si el Ta es separado del Nb en forma de Ta205, se reduce el óxido electroquími-camente, pero no se alcanza calidad suficiente para algunas aplicacionesThe similar atomic sizes of Nb and Ta due to the contraction of the lanthanides cause them to be together in nature forming the iron and manganese niobatotantalate (Fe, Mn) (Nb, Ta) 206. This compound is the constituent of coltan. Due to the current importance of tantalizing it in technology, methods have to be developed to separate it from niobium. Currently, once Ta is separated from Nb, the heptafluorotantalate, K2TaF7, is reduced with sodium. This method It was first used by Siemens & Halske AG in the early twentieth century, and has been improving over time. The reactor is introduced in an electric arc furnace and heated below 1000oC. It is necessary to control the temperature, the diluent and the agitation because the quality of the tantalum depends on them. If the Ta is separated from the Nb in the form of Ta205, the oxide is reduced electrochemically, but sufficient quality is not achieved for some applications
[López-López G., López-López J., García-Yagües M. R; TÁNTALO: Un metal estratégico, Ingeniería y Tecnologías químicas, VoI.84, n03, (2009), pp. 1-6].[López-López G., López-López J., García-Yagües M. R; TÁNTALO: A strategic metal, Engineering and Chemical Technologies, VoI.84, n03, (2009), pp. 1-6].
Las mayores reservas de coltán (80%) se encuentran en África, sobre todo en la zona de la República Democrática del Congo. Desde que se extendió el uso de Ios dispositivos electrónicos, el tántalo extraído de otras partes del mundo como Australia, Brasil o Tailandia empezó a escasear. A pesar de que este tipo de dispositivos incluyen cantidades pequeñas del metal, utilizan más del 80% de la extracción mundial de Ta.The largest reserves of coltan (80%) are found in Africa, especially in the Democratic Republic of the Congo area. Since I use electronic devices will spread, tantalum extracted from other parts of the world like Australia, Brazil and Thailand began to dwindle. Although this type of device includes small amounts of metal, they use more than 80% of the global extraction of Ta.
El tántalo se utiliza en la industria para construir recipientes de reacción e intercambiadores de calor que se vayan a colocar en atmósferas corrosivas, por su inercia química. También en biomedicina, para suturas, tornillos, alambres, mallas, implantes... por ser un material biocompatible. En Ios años noventa se aumentó la demanda del metal por su aplicación en electrónica, especialmente en condensadores sólidos de tántalo, uso al que se dedica el 80% de la producción, porque es posible lograr mayores capacidades en menores tamaños.Tantalum is used in the industry to build reaction vessels and heat exchangers that are going to be placed in corrosive atmospheres, due to their chemical inertia. Also in biomedicine, for sutures, screws, wires, meshes, implants ... for being a biocompatible material. In the nineties the demand for metal was increased due to its application in electronics, especially in solid capacitors of tantalum, which is used for 80% of production, because it is possible to achieve greater capacities in smaller sizes.
El desarrollo de la industria eléctrica y electrónica ha conducido a un aumento en la demanda de tántalo, por lo que resulta interesante recuperarlos de Ios dispositivos donde se encuentran una vez terminada su vida útil,. Estos dispositivos suponen entre 20 y 50 toneladas de residuos anualmente.The development of the electrical and electronic industry has led to an increase in the demand for tantalum, so it is interesting to recover them from the devices where they are once their useful life is over. These devices account for between 20 and 50 tons of waste annually.
Existen trabajos previos que estudian la recuperación de tántalo de condensadores. Uno de Ios métodos consiste en una oxidación con aire con una posterior separación magnética y lavado, para tratar lo obtenido con HN03 y reducirlo después con Mg, para terminar separando el Ta con un lavado ácido [Matsuoka R., Mineta K., Okabe T. H. Recycling pmcess for tantalum and some other metal scraps; Metals & materials society The minerals. 2004. EPD Congress; Mineta K., Okabe T. H. Development of a recyding pmcess for tantalum from capacitor scraps. Journal of Physics and Chemistry of Solids, VoI. 66, (2005), pp. 318-321]. Es posible destruir el recubrimiento de resina epoxi del condensador con NaOH para recuperar el Ta sinterizado de su interior, como han encontrado Katano S., Wajima T., Nakagome H. Recovery of tantalum sintered compact from used tantalum condenser using steam gasification with sodium hydroxide. APCBEE Procedia, VoI. 10, 2014, pp. 182-186.There are previous works that study the tantalum recovery of capacitors. One of the methods consists of an oxidation with air with a subsequent magnetic separation and washing, to treat the obtained with HN03 and then reduce it with Mg, to finish separating the Ta with an acid wash [Matsuoka R., Mineta K., Okabe TH Recycling pmcess for tantalum and some other metal scraps; Metals & materials society The minerals. 2004. EPD Congress; Mineta K., Okabe TH Development of a recycler pmcess for tantalum from capacitor scraps. Journal of Physics and Chemistry of Solids, VoI. 66, (2005), pp. 318-321]. It is possible to destroy the epoxy resin coating of the condenser with NaOH to recover the Sintered Ta inside, as found by Katano S., Wajima T., Nakagome H. Recovery of tantalum sintered compact from used tantalum condenser using steam gasification with sodium hydroxide . APCBEE Proceia, VoI. 10, 2014, pp. 182-186.
El objeto de la presente invención es un procedimiento sencillo para la recuperación del tántalo de Ios condensadores sólidos que lo contienen. Para ello se fija como objetivo no realizar ninguna reacción química con el tántalo que ya se encuentra en Ios condensadores como tántalo metal. Esta es la principal diferencia con patentes y publicaciones del estado de la técnica que comienzan por oxidar a tántalo(V), ya que luego deberán emplear métodos de reducción muy enérgicos y costosos, bien electroquímicos o reducción con sodio fundido, que encarecen notablemente el reciclado.The object of the present invention is a simple procedure for the recovery of tantalum from the solid capacitors that contain it. To do this, the objective is not to carry out any chemical reaction with the tantalum that is already in the capacitors, such as metal tantalum. This is the main difference with patents and publications of the state of the art that begin by oxidizing tantalum (V), since then they must employ very energetic and expensive reduction methods, either electrochemical or reduction with molten sodium, which considerably increase the cost of recycling .
El documento JPS6475632A hace referencia a un procedimiento para recuperar Ta de chatarra electrónica con condensadores. Se menciona en este procedimiento la posibilidad de disolver el Mn02 de forma eficiente mediante la aplicación, entre otros medios, de H2O2 en medio ácido. El Ta resultado de separar el Mn02 se trata de cara a purificarlo mediante métodos convencionales.Document JPS6475632A refers to a procedure to recover electronic scrap Ta with capacitors. The possibility of dissolving Mn02 in an efficient manner is mentioned in this process by the application, among other means, of H2O2 in an acid medium. The result of separating the Mn02 is treated in order to purify it by conventional methods.
El documento US2013336858A1 refiere que Ios procesos de recuperación más aplicados no permiten obtener un Ta con pureza suficiente para ser utilizados como materia prima para, por ejemplo, fabricar nuevos condensadores de Ta ya que se arrastran impurezas como Si, Sb, Mn, Sn, Pb, Zn, Fe, Ni, Cu, Al que están presentes en las PCBs de donde se extraen Ios condensadores conteniendo Ta.Document US2013336858A1 states that the most applied recovery processes do not allow to obtain a Ta with sufficient purity to be used as a raw material to, for example, manufacture new Ta capacitors as impurities are dragged as Si, Sb, Mn, Sn, Pb , Zn, Fe, Ni, C u , To which are present in the PCB s where the capacitors containing Ta are extracted.
Esta publicación remite a la JP2010214352A en lo referente a Ios procesos de concentración previos (molienda, tamizado, separación magnética, separación por gravedad y, de nuevo, otra separación magnética). Los materiales no magnéticos, donde permanece el Ta, se someten a continuación a un tratamiento ácido con HCl concentrado. En una de las alternativas se contempla la adición de H202 al tratamiento ácido lo que se menciona que conduce a retirar en una leve pero superior medida el Cu del sustrato sólido. Este tratamiento ácido al que se somete al resultado de las etapas de separación gravimétrica y magnética no es la última etapa ya que le siguen otras donde se procede a un ataque alcalino, la tostación del sustrato y otro ataque alcalino, todo ello sobre todo para despojar de tungsteno el sustrato sólido.This publication refers to the JP2010214352A in relation to the previous concentration processes (grinding, sieving, magnetic separation, gravity separation and, again, another magnetic separation). T he nonmagnetic materials, which remains Ta, are then subjected to an acid treatment with concentrated HCl. In one of the alternatives, the addition of H202 to the treatment is contemplated acid that is mentioned that leads to remove in a slight but superior measure the Cu of the solid substrate. This acid treatment to which it is submitted to the result of the gravimetric and magnetic separation stages is not the last stage since it is followed by others where an alkaline attack, the roasting of the substrate and another alkaline attack are carried out, especially to strip of tungsten the solid substrate.
Wei Yuezhou; Sato Nobuaki; Takenaka Toshihide; Nanjo Michio Leaching reaction of manganese dioxide from tantalum capacitor scrap. A study on he recyding of high quality rare metal secondary resource; Shigen to sozai, VoI.105, Nr.2 (1989), 181 - 187 refiere específicamente la utilización del H2O2 entre otros agentes para la extracción del Mn02 del sustrato donde permanece el Ta en condensadores procedentes de chatarra electrónica. Entre Ios agentes reductores aplicados están Na2S03, H202, así como el FeS04 en medio de ácido sulfúrico. Por lo expuesto, el H202, junto con el Na2S03, fue el más efectivo al extraer más del 90% del Mn02 después de actuar sobre el sustrato durante 24 horas a temperatura ambiente.Wei Yuezhou; Sato Nobuaki; Takenaka Toshihide; Nanjo Michio Leaching reaction of manganese dioxide from tantalum capacitor scrap. A study on the recycling of high quality rare metal secondary resource; Shigen to sozai, VoI.105, Nr.2 (1989), 181-187 specifically refers to the use of H2O2 among other agents for the extraction of Mn02 from the substrate where Ta remains in capacitors from electronic scrap. Among the reducing agents applied are Na2S03, H202, as well as FeS04 in sulfuric acid medium. For this reason, H202, together with Na2S03, was the most effective when extracting more than 90% of Mn02 after acting on the substrate for 24 hours at room temperature.
El documento de Orlov V M.; Kiselev E.N. Leaching of manganese dioxide from porous bodies; Russian Journal of Applied Chemistry VoI. 85, Nr.11 (2012), pp.1699-1702, revela literalmente la reducción del Mn02 con H202 en medio ácido H2S04 (también HCl). Está orientado a Ios condensadores de electrolito sólido, si bien no refiere que Ios condensadores de Ios que se pretende recuperar el Ta sean sometidos a una operación previa de molienda y separaciones gravimétricas y magnética.Orlov V M's paper; Kiselev EN Leaching of manganese dioxide from porous bodies; Russian Journal of Applied Chemistry V or I. 85, Nr.11 (2012), pp. 1699-1702, literally reveals the reduction of Mn02 with H2O2 in H2S04 acid medium (also HCl). It is oriented to the solid electrolyte capacitors, although it does not mention that the capacitors of which the Ta is intended to be recovered are subjected to a previous operation of grinding and gravimetric and magnetic separations.
e x p l ic a c ió n de la in v e n c ió ne x p l ic ation of in v e n c io n
En coherencia con lo expuesto en al apartado de estado de la técnica, el planteamiento es desarrollar un procedimiento que incluya principalmente operaciones físicas para la extracción del tántalo de Ios condensadores.In coherence with what is stated in the section on the state of the art, the approach is to develop a procedure that mainly includes physical operations for the extraction of tantalum from the condensers.
Caso de plantear alguna operación química esta no deberá afectar al tántalo existente ni deberá aportar a la mezcla de reacción ningún elemento metálico adicional. De esta manera se asegura que el tántalo permanece como tal y que no se impurifica con ningún elemento metálico adicional. If any chemical operation is proposed, it should not affect the existing tantalum nor should it contribute any additional metal elements to the reaction mixture. In this way it is ensured that tantalum remains as such and that it is not contaminated with any additional metallic element.
Constituye, por ello, el objeto de la presente invención un procedimiento para la recuperación de tántalo metal de condensadores electrolíticos procedentes de chatarra electrónica que comprende las siguientes etapas:It is therefore the object of the present invention a method for the recovery of tantalum metal electrolytic capacitors from electronic scrap comprising the following steps:
- ruptura controlada de los condensadores en partes con un tamaño comprendido entre 0,5 y 1 cm- controlled breaking of the capacitors in parts with a size between 0.5 and 1 cm
- separación por gravedad del recubrimiento que rodea al electrodo de tántalo- separation by gravity of the coating surrounding the tantalum electrode
- separación magnética de los terminales metálicos de los condensadores que contienen al menos Cu y Ni- Magnetic separation of metallic terminals from capacitors containing at least C u and Ni
- aislamiento del material oscuro que se obtiene tras las etapas anteriores y que comprende tántalo metal y Mn02- isolation of the dark material obtained after the previous steps and comprising tantalum metal and Mn02
caracterizado porque la separación del tántalo metal del Mn02 comprende a su vez: - trituración del material oscuro hasta un tamaño comprendido entre 0,1 y 0,5 mmcharacterized in that the separation of the metal tantalum from the Mn02 comprises in turn: - grinding the dark material to a size comprised between 0.1 and 0.5 mm
- reducción del Mn02 mediante tratamiento con un agente reductor que comprende ácido cítrico a una temperatura comprendida entre 200C y 600C durante un periodo de tiempo comprendido entre 90 min y 24 h- reduction of Mn02 by treatment with a reducing agent comprising citric acid at a temperature comprised between 200C and 600C for a period of time comprised between 90 min and 24 h
- filtración del producto obtenido en la etapa anterior- filtration of the product obtained in the previous stage
- lavado con una disolución acuosa del sólido resultante de la etapa anterior para eliminar el citrato de manganeso- washing with an aqueous solution of the solid resulting from the previous step to remove manganese citrate
- secado del sólido obtenido tras la etapa de lavado a temperatura comprendida entre 60oC y 200oc el cual contiene tántalo metal con al menos el 99,5% de pureza.- drying the solid obtained after the washing step at a temperature between 60 o C and 200 c which contains tantalum metal with at least 99.5% purity.
En un modo preferente de realización del procedimiento objeto de la invención, los condensadores tienen geometría de prisma rectangular con volúmenes comprendidos entre 24 y 240 mm3, realizándose la ruptura controlada de los mismos mediante aplastamiento.In a preferred embodiment of the process object of the invention, the capacitors have rectangular prism geometry with volumes comprised between 24 and 240 mm3, the controlled breaking thereof being carried out by crushing.
Alternativamente, los condensadores pueden presentar otras geometrías, particularmente elipsoidal.Alternatively, the capacitors may have other geometries, particularly ellipsoidal.
La etapa de separación por gravedad se realiza mediante flotación en agua quedando abajo la parte interna de los condensadores que contiene el tántalo metal. El material del recubrimiento puede ser de varios tipos, particularmente de resina epoxi ignífuga o cerámico. The separation stage by gravity is carried out by flotation in water, leaving the internal part of the condensers contained in the tantalum metal below. The coating material may be of various types, particularly of fire retardant or ceramic epoxy resin.
La etapa de separación magnética se realiza aplicando un campo magnético con densidad de flujo comprendida entre 0,1 y 0,25 TThe magnetic separation stage is carried out by applying a magnetic field with a flow density between 0.1 and 0.25 T
Opcionalmente, los terminales magnéticos de los condensadores pueden contener otros metales seleccionados entre Ag, Pb, Sn o Zn o mezclas y combinaciones de los mismos. Para un resultado óptimo del procedimiento de la invención, el material oscuro separado en las etapas anteriores debe triturarse hasta un tamaño de 0,2 mm y la posterior reducción del Mn02 del material oscuro con el agente reductor que comprende ácido cítrico debe realizarse en proporción agente reductor/material oscuro comprendida entre 0,4 gr y 20 gr de agente reductor por gramo de material oscuro.Optionally, the magnetic terminals of the capacitors may contain other metals selected from Ag, Pb, Sn or Zn or mixtures and combinations thereof. For an optimal result of the method of the invention, the dark material separated in the previous steps must be ground to a size of 0.2 mm and the subsequent reduction of the Mn02 of the dark material with the reducing agent comprising citric acid should be carried out in an agent proportion reducer / dark material comprised between 0.4 gr and 20 g of reducing agent per gram of dark material.
El agente reductor puede comprender adicionalmente ácido oxálico.The reducing agent may additionally comprise oxalic acid.
La disolución acuosa que se emplea para el lavado del sólido resultante tras la etapa de reducción comprende HCl en proporción comprendida entre el 3% y el 33% en peso de HCl en agua y la etapa de secado del sólido, una vez lavado, se realiza a cualquier temperatura entre 60oC y 200oC. Se han realizado ensayos a 75qC y en algunas partidas con H2O2 se secó a 140oc..The aqueous solution used for the washing of the resulting solid after the reduction step comprises HCl in the proportion comprised between 3% and 33% by weight of HCl in water and the solid drying step, once washed, is carried out at any temperature between 60oC and 200oC. Tests were carried out at 75qC and in some batches with H2O2 it was dried at 140oc ..
d e s c r ip c ió n d e t a l la d a y m o d o de r e a liz a c ió n de la in v e n c ió nd e s c r ip c io n d a t a n d a y m o d o de r e a l io n s
La primera operación del procedimiento de la invención es la ruptura de los condensadores electrolíticos de tántalo de tipo SMD (Surface Mounting Device), que tienen tamaños de 8x 4,5x 4 cm o menores que se realiza mediante aplastamiento hasta conseguir tamaños comprendidos entre 0,5 y 1 cm. De esta manera se separan bien sus tres componentes: un recubrimiento de resina epoxi ignífuga que rodea a un electrodo de Ta sinterizado de color negro, del que salen dos terminales de metal.The first operation of the process of the invention is the breaking of the SMD (Surface Mounting Device) type tantalum electrolytic capacitors, which have sizes of 8x 4.5x4 cm or smaller, which is done by crushing to achieve sizes comprised between 0, 5 and 1 cm. In this way its three components are well separated: a flame-retardant epoxy resin coating that surrounds a black sintered Ta electrode, from which two metal terminals emerge.
De la mezcla se separan las partes de terminales metálicas mediante un imán de 01 0,25 T que contienen metales tales como Cu, Ni y cantidades variables de Ag de modo que pueden ser incorporadas a un proceso de reciclaje de estos metales.The metal terminal parts are separated from the mixture by means of a 01.25 T magnet that contains metals such as C u , Ni and variable quantities of Ag so that they can be incorporated into a recycling process for these metals.
De la mezcla resultante se pueden separar los trozos de resina epoxi del resto de la parte interna mediante flotación en agua. La diferencia de densidades de esta parte (menor que el agua) de la que mayoritariamente contiene el Ta (densidad del metal 16,65) permite una separación casi completa.From the resulting mixture, the pieces of epoxy resin can be separated from the rest of the internal part by flotation in water. The density difference of this part (smaller than water), of which Ta contains most (metal density 16.65) allows almost complete separation.
La parte interna de color oscuro ha de triturarse hasta un tamaño de entre 0,1-0,5 mm (150-35 mesh) preferentemente 0,2mm (70 mesh).The dark colored inner part has to be crushed to a size between 0.1-0.5 mm (150-35 mesh) preferably 0.2mm (70 mesh).
Esta parte está constituida por tántalo y manganesa (Mn02) en un análisis promedio de aproximadamente 74% de Ta y el resto 26% Mn02, además de pequeñas cantidades de otros elementos.This part is constituted by tantalum and manganese (Mn02) in an average analysis of approximately 74% of Ta and the rest 26% Mn02, in addition to small amounts of other elements.
Tabla 1. Resultado del machacadoTable 1. Result of crushing
Para obtener el metal Ta se procede a una reducción de la manganesa para la que se han ensayado los siguientes reductores:To obtain the Ta metal, a reduction of the manganese for which the following reductants have been tested is carried out:
Tabla 2. Reductores utilizados para reducir Mn(IV)Table 2. Reducers used to reduce Mn (IV)
Los mejores resultados se obtienen con ácido cítrico en el que la reducción tiene lugar sin la adición de ácido adicional de ningún tipo, con lo cual el método es suave y solo con aditivos orgánicos cuyos productos de reacción son C02 y H20 y cuyo exceso si se desea eliminar, puede hacerse por calentamiento. La utilización de peróxido de hidrógeno requiere la adción de un ácido como puede ser ácido sulfúrico, lo que es una fuente de posibles impurezas e inconvenientes si se desea aprovechar las sales de manganeso(ll) que se forman como subproducto.The best results are obtained with citric acid in which the reduction takes place without the addition of additional acid of any kind, whereby the method is smooth and only with organic additives whose reaction products are C02 and H20 and whose excess if you want to eliminate, it can be done by heating. The use of hydrogen peroxide requires the addition of an acid such as sulfuric acid, which is a source of possible impurities and drawbacks if it is desired to take advantage of the manganese salts (II) formed as a by-product.
Una vez realizada la reducción se filtra y el sólido resultante se lava en agua para eliminar la disolución conteniendo citrato de manganeso(ll).Once the reduction is carried out, it is filtered and the resulting solid is washed in water to eliminate the solution containing manganese citrate (II).
La reducción con oxalato progresa adecuadamente pero se forma oxalato de manganeso(ll) que es insoluble en el medio y es difícil de retirar por lavados y decantación en aguaThe reduction with oxalate progresses adequately but manganese oxalate (ll) is formed which is insoluble in the medium and difficult to remove by washing and decanting in water
EjemploExample
La muestra de partida contiene un 83,76% de Ta y un 16,24% de Mn según los análisis de fluorescencia de rayos X (XRF).The starting sample contains 83.76% Ta and 16.24% Mn according to the X-ray fluorescence (XRF) analysis.
Una dispersión de 0,9932 g de muestra en polvo (que contiene 0,2552 g Mn02; 2,94 mmol Mn02) en 10 ml de agua destilada se trata con ácido cítrico (1,1304 g; 5,88 mmol), siguiendo la siguiente reacción: A dispersion of 0.9932 g of powder sample (containing 0.2552 g Mn02, 2.94 mmol Mn02) in 10 ml of distilled water is treated with citric acid (1.1304 g, 5.88 mmol), following the following reaction:
9 Mn02 C6H8O7 18 H+ ^ 9 Mn2+ 13 H2O 6 CO29 Mn02 C6H8O7 18 H + ^ 9 Mn2 + 13 H2O 6 CO2
La mezcla se deja agitar a 60oC durante una hora y 30 minutos. Transcurrido este tiempo, se observa una disolución transparente de color verdoso y un sólido negro. Se filtró por gravedad en un embudo cónico con doble papel de filtro y el precipitado se lavó con 10 ml de una disolución de HCl en H20 1:10 y después con agua destilada hasta conseguir que las aguas fueran incoloras. El sólido se seca después en la estufa a 75oc sobre un papel de filtro, recogiendo 0,72 g de sólido negro. Este resultado equivale a que a partir de 10 gramos de condensadores de partida se han recuperado 2,9 gramos de tántalo.The mixture is allowed to stir at 60 ° C for one hour and 30 minutes. After this time, a transparent solution of greenish color and a black solid is observed. It was filtered by gravity in a conical funnel with double filter paper and the precipitate was washed with 10 ml of a HCl solution in H20 1:10 and then with distilled water until the water was colorless. The solid is then dried in the oven at 75 ° C on a filter paper, collecting 0.72 g of black solid. This result is equivalent to the fact that 2.9 grams of tantalum have been recovered from 10 grams of starting capacitors.
XRF (Wirec): 99,83 ± 0,08% Ta; 0,17 ± 0,06% Mn. XRF (Wirec): 99.83 ± 0.08% Ta; 0.17 ± 0.06% Mn.
Claims (10)
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| PCT/ES2017/070597 WO2018046786A1 (en) | 2016-09-07 | 2017-09-06 | A method for recovering tantalum metal from electrolytic capacitors |
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| KR100523845B1 (en) * | 2003-02-11 | 2005-10-27 | 한국지질자원연구원 | Recovery method of Tantalum anode from Waste Tantalum Capacitor |
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