EP3108044A4 - Float zone silicon wafer manufacturing system - Google Patents

Float zone silicon wafer manufacturing system Download PDF

Info

Publication number: EP3108044A4
Authority: EP; European Patent Office
Prior art keywords: silicon wafer; manufacturing system; wafer manufacturing; float zone; zone silicon
Prior art date: 2014-02-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP15752134.5A

Other languages

German (de)

French (fr)

Other versions

EP3108044A1 (en

Inventor

Andrew X. YAKUB

James Benjamin ROSENZWEIG

Mark Stanley GOORSKY

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Rayton Solar Inc

Original Assignee

Rayton Solar Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-02-18

Filing date

2015-02-18

Publication date

2017-09-06

2015-02-18 Application filed by Rayton Solar Inc filed Critical Rayton Solar Inc

2016-12-28 Publication of EP3108044A1 publication Critical patent/EP3108044A1/en

2017-09-06 Publication of EP3108044A4 publication Critical patent/EP3108044A4/en

Status Withdrawn legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Physics & Mathematics (AREA)
Electromagnetism (AREA)
Processing Of Stones Or Stones Resemblance Materials (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Weting (AREA)

EP15752134.5A 2014-02-18 2015-02-18 Float zone silicon wafer manufacturing system Withdrawn EP3108044A4 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US201461941325P	2014-02-18	2014-02-18
PCT/US2015/016436 WO2015126980A1 (en)	2014-02-18	2015-02-18	Float zone silicon wafer manufacturing system

Publications (2)

Publication Number	Publication Date
EP3108044A1 EP3108044A1 (en)	2016-12-28
EP3108044A4 true EP3108044A4 (en)	2017-09-06

Family

ID=53878923

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP15752134.5A Withdrawn EP3108044A4 (en)	2014-02-18	2015-02-18	Float zone silicon wafer manufacturing system

Country Status (8)

Country	Link
EP (1)	EP3108044A4 (en)
JP (1)	JP2017508706A (en)
KR (1)	KR20160145550A (en)
CN (1)	CN106133210B (en)
AU (1)	AU2015219029A1 (en)
CA (1)	CA2939214A1 (en)
PH (1)	PH12016501653A1 (en)
WO (1)	WO2015126980A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20030186493A1 (en) *	2000-04-03	2003-10-02	Atsushi Iwasaki	Method and device for making substrates
WO2008058131A2 (en) *	2006-11-06	2008-05-15	Silicon Genesis Corporation	Method and structure for thick layer transfer using a linear accelerator
US8623137B1 (en) *	2008-05-07	2014-01-07	Silicon Genesis Corporation	Method and device for slicing a shaped silicon ingot using layer transfer
US20140026617A1 (en) *	2012-07-30	2014-01-30	Andrew X. Yakub	Processes and apparatuses for manufacturing wafers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0517292A (en) *	1991-07-05	1993-01-26	Nippon Steel Corp	Silicon cooling method
JP3628108B2 (en) *	1996-06-10	2005-03-09	株式会社イオン工学研究所	Manufacturing method of solar cell
US7976629B2 (en) *	2008-01-01	2011-07-12	Adam Alexander Brailove	Crystal film fabrication
US8481845B2 (en) *	2008-02-05	2013-07-09	Gtat Corporation	Method to form a photovoltaic cell comprising a thin lamina
JP5428216B2 (en) *	2008-06-20	2014-02-26	富士電機株式会社	Silicon wafer, semiconductor device, method for manufacturing silicon wafer, and method for manufacturing semiconductor device
JP2011138866A (en) *	2009-12-28	2011-07-14	Mitsubishi Materials Corp	Method of manufacturing polycrystalline silicon block material, method of manufacturing polycrystalline silicon wafer, and polycrystalline silicon block material
CN102729342A (en) *	2012-06-06	2012-10-17	海润光伏科技股份有限公司	Preparation method used in manufacturing of efficient polycrystalline silicon wafer
CN103112093A (en) *	2013-01-25	2013-05-22	浙江向日葵光能科技股份有限公司	Sliced method of polycrystalline silicon solar cell

2015
- 2015-02-18 WO PCT/US2015/016436 patent/WO2015126980A1/en not_active Ceased
- 2015-02-18 AU AU2015219029A patent/AU2015219029A1/en not_active Abandoned
- 2015-02-18 KR KR1020167025465A patent/KR20160145550A/en not_active Withdrawn
- 2015-02-18 EP EP15752134.5A patent/EP3108044A4/en not_active Withdrawn
- 2015-02-18 JP JP2016553493A patent/JP2017508706A/en active Pending
- 2015-02-18 CN CN201580015272.1A patent/CN106133210B/en not_active Expired - Fee Related
- 2015-02-18 CA CA2939214A patent/CA2939214A1/en not_active Abandoned
2016
- 2016-08-18 PH PH12016501653A patent/PH12016501653A1/en unknown

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20030186493A1 (en) *	2000-04-03	2003-10-02	Atsushi Iwasaki	Method and device for making substrates
WO2008058131A2 (en) *	2006-11-06	2008-05-15	Silicon Genesis Corporation	Method and structure for thick layer transfer using a linear accelerator
US8623137B1 (en) *	2008-05-07	2014-01-07	Silicon Genesis Corporation	Method and device for slicing a shaped silicon ingot using layer transfer
US20140026617A1 (en) *	2012-07-30	2014-01-30	Andrew X. Yakub	Processes and apparatuses for manufacturing wafers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015126980A1 *

Also Published As

Publication number	Publication date
AU2015219029A1 (en)	2016-09-01
CN106133210A (en)	2016-11-16
WO2015126980A1 (en)	2015-08-27
JP2017508706A (en)	2017-03-30
CN106133210B (en)	2018-10-12
PH12016501653A1 (en)	2017-02-06
EP3108044A1 (en)	2016-12-28
KR20160145550A (en)	2016-12-20
CA2939214A1 (en)	2015-08-27

Publication	Publication Date	Title
EP3132467A4 (en)	2017-11-01	Wafer metrology technologies
EP3379588A4 (en)	2018-11-14	Semiconductor device manufacturing method
EP3144975A4 (en)	2018-03-14	Semiconductor device
EP3128550A4 (en)	2018-01-10	Semiconductor device
EP3381049A4 (en)	2018-11-14	Isolated iii-n semiconductor devices
EP3101685A4 (en)	2018-03-14	Semiconductor device
EP3136421A4 (en)	2017-12-13	Bonded soi wafer manufacturing method
EP3279924A4 (en)	2018-11-07	Semiconductor device manufacturing method
EP3043379A4 (en)	2017-08-02	Semiconductor device
SG11201704360UA (en)	2017-06-29	Method for polishing silicon wafer
EP3118896A4 (en)	2017-03-15	Semiconductor device
EP3076422A4 (en)	2017-09-27	Silicon carbide semiconductor element production method
EP3163600A4 (en)	2017-06-21	Composition for polishing silicon wafers
EP3171410A4 (en)	2017-07-26	Semiconductor device
EP3092662B8 (en)	2021-10-13	Semiconductor photodetector
SG11201607286TA (en)	2016-10-28	Method for manufacturing bonded wafer
EP3217438A4 (en)	2018-06-13	Semiconductor light-emitting element
EP3306653A4 (en)	2018-10-31	Semiconductor wafer evaluation method
EP3101160A4 (en)	2017-10-04	Semiconductor substrate manufacturing method
EP3096348A4 (en)	2017-10-18	Wafer grinding device
EP3007231A4 (en)	2017-02-15	Semiconductor device
EP3107123A4 (en)	2017-02-22	Semiconductor device
EP3203515A4 (en)	2018-05-30	Semiconductor module
EP3155656A4 (en)	2018-02-14	Surface encapsulation for wafer bonding
EP3217439A4 (en)	2018-06-06	Semiconductor light-emitting element

Legal Events

Date	Code	Title	Description
2016-11-25	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2016-12-28	17P	Request for examination filed	Effective date: 20160816
2016-12-28	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
2016-12-28	AX	Request for extension of the european patent	Extension state: BA ME
2017-05-24	DAX	Request for extension of the european patent (deleted)
2017-09-06	A4	Supplementary search report drawn up and despatched	Effective date: 20170804
2017-09-06	RIC1	Information provided on ipc code assigned before grant	Ipc: C30B 13/00 20060101ALI20170731BHEP Ipc: C30B 29/64 20060101ALI20170731BHEP Ipc: C30B 33/06 20060101AFI20170731BHEP Ipc: C30B 33/04 20060101ALI20170731BHEP Ipc: C30B 29/06 20060101ALI20170731BHEP
2019-12-13	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN
2020-01-15	18W	Application withdrawn	Effective date: 20191209