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EP3050119A1 - Procédé de fabrication d'une structure de contact de cellule photovoltaïque et cellule photovoltaïque correspondante - Google Patents

Procédé de fabrication d'une structure de contact de cellule photovoltaïque et cellule photovoltaïque correspondante

Info

Publication number
EP3050119A1
EP3050119A1 EP14776857.6A EP14776857A EP3050119A1 EP 3050119 A1 EP3050119 A1 EP 3050119A1 EP 14776857 A EP14776857 A EP 14776857A EP 3050119 A1 EP3050119 A1 EP 3050119A1
Authority
EP
European Patent Office
Prior art keywords
doping
doped
tracks
photovoltaic cell
contact structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP14776857.6A
Other languages
German (de)
English (en)
Inventor
Tim Boescke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Beam Services SA
Original Assignee
Ion Beam Services SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Beam Services SA filed Critical Ion Beam Services SA
Publication of EP3050119A1 publication Critical patent/EP3050119A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for producing a contact structure of a photovoltaic cell and to a photovoltaic cell.
  • a semiconductor material of a photovoltaic cell is provided with at least two
  • Charges are separated to produce an electric potential using incident light.
  • the electrical potential can be tapped via conductor tracks of the semiconductor material.
  • the present invention proposes a method for producing a contact structure of a photovoltaic cell and a photovoltaic cell according to the main claims.
  • Advantageous embodiments emerge from the respective subclaims and the following description.
  • Contacting the doped semiconductor material may be various
  • Targets are sought. For example, by a high doping a low contact resistance between the semiconductor material and a contact material can be achieved. However, the high doping also results in internal losses in the semiconductor material, which can be reduced if the doping is reduced. In the case of a low doping, in return, a high contact resistance results between the semiconductor material and the contact material. High doping additionally improves electrical conductivity within the doped region.
  • regions around printed conductors of the photovoltaic cell can be highly doped, while gaps between the highly doped regions are little or not doped.
  • a method for producing a contact structure of a photovoltaic cell comprising the following steps:
  • a photovoltaic cell can be understood as a solar cell.
  • a wafer can be understood as a wafer made of a semiconductor material.
  • the semiconductor material may already be predoped with foreign atoms.
  • the semiconductor material may also be present in pure form.
  • the doping may involve introducing atoms or ions of a species other than that
  • a train can be a strip.
  • the webs may be contiguous at contact points.
  • a narrow strip of metallic material can be applied to the doped tracks.
  • the metallic material may be silver-based, for example.
  • the conductor material can be printed on the doped tracks.
  • An area fraction between 20 percent and 90 percent, in particular between 40 percent and 60 percent, of the at least one side of the wafer can be doped.
  • Photovoltaic cell This can be the transmission losses within the
  • the rear side in the step of doping, can be doped in order to produce the contact structure on the rear side of the photovoltaic cell.
  • the contact structure can be used on the back of the photovoltaic cell.
  • the doped region may be formed in the form of at least one main web with a plurality of side webs.
  • the side panels may be arranged finger-shaped transversely to the main track.
  • Side lanes with conductors arranged thereon can be referred to as fingergrid.
  • the side lanes may have a predetermined length and have no further connection to other doped areas except the main lane.
  • Another dopant may be introduced to provide another doped region.
  • the further doping material may be different from the doping material.
  • the further doped region can be formed as further doped tracks. The other tracks can be separated by gaps from the tracks.
  • a p-n junction can be formed between the doped region and the further doped region in order to separate electrical charges. By juxtaposed on one side, differently doped areas can a
  • the tracks can be doped with a concentration of dopant, so that in the doped region a specific resistance, too
  • Sheet resistance or sheet resistance or specific sheet resistance between 5 ⁇ / square (square) and 150 ⁇ / square
  • a sheet resistance or sheet resistance describes the electrical resistance of a resistive layer when the resistive layer flows through an extension of the resistive layer in parallel. Accordingly, the resistance layer is traversed largely perpendicular to the layer thickness of the resistance layer.
  • the sheet resistance has the unit ⁇ (ohms) and can be measured with a four-point method or four-point measurement or four-peak measurement familiar to the person skilled in the art. Alternatively or additionally, the sheet resistance can also be determined using the Van der Pauw, which is familiar to the person skilled in the art.
  • Measuring method are measured.
  • the interstices can be used with a lower concentration of
  • Doping material to be doped as the webs. Due to a low concentration of the doping material in the interstices, transmission losses in the
  • Semiconductor material can remain at a very low level. Due to the different doping, the semiconductor material is well conductive where high current density prevails. Where there is no high current density, a low recombination rate is achieved.
  • the interspaces can be doped with a concentration of dopant, so that sets in the gaps, a resistivity or sheet resistance between 80 ⁇ / square and 500 ⁇ / square. By adjusting the resistivity, a balance between the
  • the doping material may be introduced in a first pass in the region of the tracks and the spaces to the concentration of the
  • Doping material of the spaces to reach In a second pass, the doping material can be introduced in the region of the webs to the To achieve concentration of the doping material in the doped region.
  • the doping can be achieved easily and quickly. For this purpose, no complicated devices for doping with different doping concentration are required.
  • Spaces can be specified using a processing rule.
  • the internal losses and the transmission losses may be deposited in the processing specification depending on the width of the webs and / or the width of the interspaces and / or the doping concentration.
  • a minimum of the losses can be determined and the tracks are designed accordingly.
  • an ion implantation process may be used.
  • the ion implantation can be used particularly advantageously for doping, since doping can thus be carried out in a very targeted manner.
  • the doped regions can be formed with phosphorus and used on the back of an n-type photovoltaic cell and boron-doped emitter.
  • the doped region and the gaps may be formed with phosphorus and appropriately used on the back side of the n-type photovoltaic cell and boron-doped emitter.
  • a photovoltaic cell is presented with a wafer having at least on one side a contact structure consisting of doped tracks and an applied conductor material, wherein the tracks project beyond the conductor material on both sides and the tracks are separated by gaps.
  • An advantage is also a computer program product with program code, which on a machine-readable carrier such as a semiconductor memory, a
  • Hard disk space or an optical storage can be stored and used to carry out the method according to one of the embodiments described above, when the program product is executed on a computer or a device.
  • Fig. 1 is a representation of a photovoltaic cell according to a
  • Fig. 2 is an illustration of a photovoltaic cell according to another
  • Fig. 3 shows a potential and current density distribution within a
  • Fig. 5 is an illustration of a relationship between an internal
  • Fig. 6 is an illustration of a relationship between an internal
  • FIG. 1 shows an illustration of a photovoltaic cell 100 in accordance with a
  • the photovoltaic cell 100 has a wafer 102 made of a semiconductor material.
  • the photovoltaic cell 100 is contacted on both sides.
  • a contact structure 104 is arranged in this exemplary embodiment on a rear side of the wafer 102.
  • the contact structure 104 consists of doped tracks 106 and an applied conductor material 108.
  • the conductor material 108 is formed as conductor tracks.
  • the conductor material 108 is a metal-based material. In particular, the conductor material 108 is silver or a silver-based alloy.
  • the webs 106 project beyond the conductor material 108 on both sides.
  • the tracks 106 are separated by gaps 1 10.
  • the webs 106 cover a surface portion of the back side of the wafer 102 designed for minimum losses and maximum efficiency.
  • the wafer 102 is doped over the whole area. There are the
  • the photovoltaic cell 100 on the front side also has a contact structure according to the approach presented here.
  • the doped tracks are doped at the front with a different doping material than the tracks 106 at the back.
  • the differently doped tracks act as the base and emitter of the
  • the photovoltaic cell 100 on the back of two different contact structures In addition to the illustrated contact structure 104, the photovoltaic cell 100 has a further contact structure of further tracks and conductor material 108. The other tracks are also separated by gaps 1 10 of the tracks 106. The further tracks are doped with a different doping material than the tracks 106. As a result, the emitter and the base of the photovoltaic cell 100 are arranged side by side on the rear side of the photovoltaic cell 100. The Front of the photovoltaic cell 100 is not contacted in this embodiment, resulting in low Abschattungsschen.
  • BSF doping back-surface-field doping
  • FIG. 2 shows a representation of a photovoltaic cell 100 according to a further exemplary embodiment of the present invention.
  • the photovoltaic cell 100 essentially corresponds to the photovoltaic cell in FIG. 1.
  • Doping material as in the doped tracks 106 on.
  • the low doping 200 results in an increased electrical conductivity of the back of the
  • the contact structure 104 to fabricate the contact structure 104, once the entire backside has been doped with the low doping 200. Then, the tracks 106 have been post-doped to achieve the high doping required for low contact resistance between the tracks 106 and the conductor material.
  • the tracks 106 and the low doping 200 have been independently introduced into the wafer 102.
  • the doping is well controlled and spatially well placed.
  • FIGS. 1 and 2 presents a double-sided contacted solar cell 100 with partially doped rear side.
  • a structure 104 for a bilaterally contacted solar cell 100 with increased efficiency is described.
  • the electrical and optical losses can be improved by introducing a dielectrically passivated and locally contacted backside.
  • the locally contacting backside metallization 108 can be replaced by the use of a Screen printed Silver H-Grids 108, as it is already used on the cell front are used.
  • the doping can be carried out in several variants.
  • the doping can be performed as PERT (Passivated Emitter and Rear Totally diffused) or as PERL (Passivated Emitter and Rear Locally diffused).
  • PERT Passivated Emitter and Rear Totally diffused
  • PERL Passivated Emitter and Rear Locally diffused
  • Metallization 108 is doped (usually 5-20% of the total area).
  • An average dopant concentration may be placed between the fingers of the metallization 108.
  • the region 110 between the highly doped regions 106 is also lightly doped. This can be z. B. to a
  • the area coverage F may be between 20% and 90%.
  • the area coverage fraction F is preferably 40-60%.
  • the structure 104 can be combined with a full-surface metallization. Likewise, the structure 104 with a
  • Rear side emitter cell are combined.
  • a partially doped FSF is used.
  • the cell may have 100 p or n-type substrate 102.
  • the heavily doped region 106 may be doped with boron or phosphorus / arsenic.
  • the heavily doped region 106 it is possible to achieve film resistances of 5 to 150 ohms / square, that is to say resistance per area, preferably 20-60 ohms.
  • the intermediate region 110 may be undoped or the sheet resistance may be 80-500 ohms / square.
  • the formation of the doping regions can occur
  • Re-etching applying a local diffusion mask and a subsequent doping or application of local dopant sources such as doping glasses are performed.
  • the remaining region 1 10 is low doped.
  • the wafer 102 is highly doped under the fingers 108. In between, the wafer 102 is low doped.
  • the width or interval of the doped regions 106 and spaces 110 is optimized. Usually they are the same width.
  • Doped areas 106 and spaces 1 10 form a fingergrid.
  • Fig. 3 shows a potential and current density distribution within one
  • the contact structure 302 is here, in contrast to the approach presented here, from a doped region, which only the width of the applied
  • Conductor 108 has. Between the tracks 108, the wafer of the solar cell is undoped. The potential density and the current density are extremely high in the area of the contact structure 302. The potential density and the current density decrease rapidly with increasing distance from the contact structure 302. At a certain distance from the track 108, the potential density and the current density are below a display threshold. In the area of the contact structure 302, the potential density and the current density are so high that an electrical resistance of the semiconductor material of the wafer can lead to a heating of the material.
  • Fig. 4 shows a potential and current density distribution within one
  • the contact structure 402 consists here of a closed doped surface on which the conductor track 108 is arranged. The surface is equally heavily doped throughout.
  • Potential density and current density are high in the area of the conductor track. In comparison to the contact structure in FIG. 3, the potential density and the current density decrease significantly more slowly. A potential density and a current density are shown in the area of the entire doped surface. In areas away from metallization 108 (x> 0.05), only small losses occur. The equipotential lines are at a flat angle to the BSF. Accordingly, a high doping is not mandatory here.
  • FIGS. 3 and 4 show a potential and current density distribution (arrows) within a PERC / PERL and a PERT solar cell segment with 30 ohm BSF.
  • An equipotential front has been assumed for simplicity.
  • FIG. 5 shows an illustration of a relationship 500 between an internal series resistance of a plurality of solar cell types and a number of fingers of a contact structure of the solar cells.
  • the relationship 500 is plotted on a graph showing the number of fingers on the abscissa and on the abscissa
  • the first embodiment 600 is a photovoltaic cell with undoped spaces between heavily doped bands.
  • the first embodiment is shown for example in FIG.
  • the series resistance is at five percent area of the heavily doped bands about six times as high as a minimum achievable series resistance, at 100 percent area of the heavily doped area.
  • the series resistance decreases rapidly in the first embodiment 600 with increasing doped area ratio and approaches asymptotically to the minimum value, which is not undershot. Even at a 40 percent area ratio, the series resistance is only ten percent higher than the minimum value.
  • the second embodiment 602 is a photovoltaic cell with lightly doped gaps, as shown for example in FIG. Here, the series resistance also decreases with increasing area proportion of the heavily doped area. However, even at five percent areal proportion of the series resistance is only 30 percent higher than the minimum value. At 50 percent area share of the
  • Transverse line resistance shown. Ohmic losses in the metallization are not taken into account.
  • the photovoltaic cell has an equipotential front side.
  • the resistance in the illuminated mode (homogeneous generation) is slightly higher.
  • the representation is based on a Rbase of 2.5 ohm * cm, 160pm
  • Fig. 7 shows a representation of a relationship between a
  • Recombination rate and a doped surface portion of a contact structure according to an embodiment of the present invention.
  • the two different embodiments 600, 602 are plotted in a common diagram.
  • the diagram shows on the abscissa the proportion of area between zero percent area fraction and 100 percent area fraction.
  • the recombination rate is plotted on the ordinate.
  • the recombination rate in both embodiments 600, 602 increases linearly with increasing area fraction.
  • both exemplary embodiments 600, 602 has a recombination rate of 150.
  • the first embodiment 600 has a recombination rate of 25 at five percent areal proportion.
  • the second embodiment 602 has an area ratio of five percent
  • Embodiments 600, 602 are implemented economically. An increased profitability results with a surface portion between 40 per cent and 60 per cent.
  • the method 800 includes a step 802, the
  • step 802 of providing a wafer for the
  • Photovoltaic cell provided.
  • step 804 of doping an area portion of at least one side of the wafer is doped with a dopant to obtain a doped area.
  • the doped region is formed as doped tracks. The tracks are separated by gaps.
  • step 806 of contacting the doped region is contacted to make the contact structure. In this case, a conductor material is applied to the webs so that the webs project beyond the conductor material on both sides.
  • an area fraction between 20 percent and 90 percent is doped in step 804 of the doping. In this case, an area share of 10 percent to 80 percent remains undoped.
  • an area fraction between 40 percent and 60 percent is doped in step 804 of doping. In this case, an area share of 40 percent to 60 percent remains undoped. With these areas, an optimum of conductivity and a minimum of recombination can be achieved.
  • the doped region in the form of at least one major orbit having a plurality of
  • the side panels become finger-shaped across the main line arranged.
  • Several main tracks with their side panels can be arranged distributed on the photovoltaic cell.
  • the side panels are arranged alternately to the main track.
  • the side panels are disposed opposite the main track.
  • the main and side panels form an H-shaped pattern, with the main line representing the transverse line.
  • step 804 of doping another dopant is introduced to obtain another doped region.
  • the further doping material is different from the doping material and the further doped region is formed as further doped tracks.
  • the further doped region is arranged on the same side as the doped region.
  • a side opposite the side is here undoped or slightly doped, and executed uncontacted.
  • the tracks are doped with a concentration of dopant so that a resistivity of between 10 ohms / m and 150 ohms / m is established in the doped region.
  • the tracks are doped with a concentration of dopant, so that a specific resistance between 20 ohms / m and 60 ohms / m is established in the doped region.
  • the doping step 804 in the doping step 804, the
  • Spaces doped with a lower concentration of the doping material than the webs are weakly doped. Due to the weak doping, an electrical resistance is reduced in the intermediate space and thus also reduces electrical losses.
  • the doping step 804 in the doping step 804, the
  • the doping step 804 in the doping step 804, the
  • Doping material is introduced in a first pass in the region of the tracks and the gaps in order to achieve the concentration of the doping material of the intermediate spaces.
  • the concentration of the doping material of the intermediate spaces is achieved in a second round.
  • a width of the paths and / or a width of the spaces is determined using a processing rule.
  • edge shunts such as an edge mask

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

La présente invention concerne un procédé de fabrication (800) d'une structure de contact (104) de cellule photovoltaïque (100). Le procédé (800) comporte une étape de préparation (802), une étape de dopage (804) et une étape de mise en contact électrique (806). A l'étape de préparation (802), une plaquette (102) destinée à la cellule photovoltaïque (100) est préparée. A l'étape de dopage (804), une partie plane d'au moins un côté de la plaquette (102) est dopée à l'aide d'un matériau de dopage afin d'obtenir une zone dopée (106), la zone dopée (106) se présentant sous la forme de pistes dopées (106) et les pistes (106) étant séparées par des espaces intermédiaires (110). A l'étape de mise en contact électrique (806), la zone dopée (106) est mise en contact électrique afin de fabriquer la structure de contact (104), un matériau conducteur (108) étant appliqué sur les pistes (106) de sorte que les pistes (106) font saillie des deux côtés du matériau conducteur (108).
EP14776857.6A 2013-09-27 2014-09-26 Procédé de fabrication d'une structure de contact de cellule photovoltaïque et cellule photovoltaïque correspondante Ceased EP3050119A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201310219599 DE102013219599A1 (de) 2013-09-27 2013-09-27 Verfahren zum Herstellen einer Kontaktstruktur einer Fotovoltaikzelle und Fotovoltaikzelle
PCT/EP2014/070612 WO2015044341A1 (fr) 2013-09-27 2014-09-26 Procédé de fabrication d'une structure de contact de cellule photovoltaïque et cellule photovoltaïque correspondante

Publications (1)

Publication Number Publication Date
EP3050119A1 true EP3050119A1 (fr) 2016-08-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP14776857.6A Ceased EP3050119A1 (fr) 2013-09-27 2014-09-26 Procédé de fabrication d'une structure de contact de cellule photovoltaïque et cellule photovoltaïque correspondante

Country Status (6)

Country Link
US (1) US20160225921A1 (fr)
EP (1) EP3050119A1 (fr)
KR (1) KR20160064173A (fr)
CN (1) CN105765733B (fr)
DE (1) DE102013219599A1 (fr)
WO (1) WO2015044341A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102856328A (zh) * 2012-10-10 2013-01-02 友达光电股份有限公司 太阳能电池及其制作方法
WO2014098016A1 (fr) * 2012-12-18 2014-06-26 ＰＶＧ Ｓｏｌｕｔｉｏｎｓ株式会社 Cellule solaire et son procédé de production

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009111669A2 (fr) * 2008-03-05 2009-09-11 Varian Semiconductor Equipment Associates Techniques de dopage sans masque pour cellules solaires
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
US8673679B2 (en) * 2008-12-10 2014-03-18 Applied Materials Italia S.R.L. Enhanced vision system for screen printing pattern alignment
DE102009034594A1 (de) 2009-02-24 2010-08-26 Bosch Solar Energy Ag Verfahren zur Herstellung einer kristallinen Silizium-Solarzelle mit ganzflächiger, legierter Rückseitenmetallisierung
KR102052503B1 (ko) * 2012-01-19 2020-01-07 엘지전자 주식회사 태양 전지 및 이를 제조하는 제조 장치와 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102856328A (zh) * 2012-10-10 2013-01-02 友达光电股份有限公司 太阳能电池及其制作方法
US20140096821A1 (en) * 2012-10-10 2014-04-10 Au Optronics Corp. Solar cell and method for making thereof
WO2014098016A1 (fr) * 2012-12-18 2014-06-26 ＰＶＧ Ｓｏｌｕｔｉｏｎｓ株式会社 Cellule solaire et son procédé de production
EP2937910A1 (fr) * 2012-12-18 2015-10-28 PVG Solutions Inc. Cellule solaire et son procédé de production

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015044341A1 *

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DE102013219599A1 (de) 2015-04-16
US20160225921A1 (en) 2016-08-04
CN105765733B (zh) 2018-08-31
CN105765733A (zh) 2016-07-13
WO2015044341A1 (fr) 2015-04-02

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