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EP2760611A1 - Matériau de base d'une liaison frittée et procédé de réalisation d'une liaison frittée - Google Patents

Matériau de base d'une liaison frittée et procédé de réalisation d'une liaison frittée

Info

Publication number
EP2760611A1
EP2760611A1 EP12766629.5A EP12766629A EP2760611A1 EP 2760611 A1 EP2760611 A1 EP 2760611A1 EP 12766629 A EP12766629 A EP 12766629A EP 2760611 A1 EP2760611 A1 EP 2760611A1
Authority
EP
European Patent Office
Prior art keywords
acid
starting material
sintered
flux
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12766629.5A
Other languages
German (de)
English (en)
Inventor
Martin Rittner
Christiane FRUEH
Michael Guenther
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2760611A1 publication Critical patent/EP2760611A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/105—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/16—Metallic particles coated with a non-metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29369—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/29486—Coating material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering

Definitions

  • the invention relates to a sintered compound, a starting material thereof and a method for the production thereof, furthermore an electronic circuit containing the sintered connection, according to the preamble of the independent
  • Power electronics are used in many areas of technology. Especially in electrical or electronic devices in which large currents flow, the use of power electronics is unavoidable. The currents required in the power electronics lead to a self-heating of the electrical or electronic components contained.
  • the components of the power electronics can be used in places that are constantly exposed to an elevated temperature. Examples include control devices in the automotive sector, which are arranged directly in the engine compartment or in the gear compartment. In this case, the control unit is also exposed to a constant temperature change, whereby the electrical and / or electronic components contained are subjected to high thermal loads. In general, temperature changes in a range up to a temperature of 200 degrees Celsius are common. However, more and more operating temperatures are increasingly required. As a result, overall increased demands are placed on the reliability and reliability of electrical or electronic devices with power electronics.
  • solder joints are known, for example, lead-free solder joints of tin-silver or tin-silver-copper.
  • lead-containing soldered joints can be used.
  • lead-containing solder joints are severely limited by legal regulations for reasons of environmental protection in terms of their permissible technical applications.
  • lead-free brazing alloys are available for use at elevated or high temperatures, in particular above 200 degrees Celsius.
  • Lead-free brazing alloys generally have a higher melting point than 200 ° C. The problem with this is that with the use of brazing material to form a bonding layer only a few electrical or electronic components come as joining partners in question, which can withstand the high temperatures during melting of the brazing alloys.
  • sintered connections which can be processed at low temperatures and yet are suitable for operation at elevated temperatures.
  • the patent application DE 102007046901 AI shows such sintered connections.
  • a paste-like starting material comprising readily decomposable silver compounds and silver flakes or nanosilver is used.
  • copper may be contained in the starting material, for example.
  • Solvents are added to form the paste.
  • the silver compounds decompose to form the elemental silver and form together with the silver flakes and the nanosilver, the sintered compound.
  • the sintered compound is used to contact two elements. When using the described starting material, the contacting can already take place with low contact pressures of the contacting partners.
  • DE 60221433 T2 discloses a sintered compound which is produced from a paste containing particles of a silver compound. In addition to the particles from the silver compound, a reducing agent in dissolved form is also included. At a temperature treatment of the sintering paste below 200 ° C, the silver compound is reduced to the elemental silver to form the
  • Metals numerous nano- or micro-sized metallic particles, coatings gen, solvents, additives, reducing agents, crystallization inhibitors, wetting agents and others.
  • the invention is based on the object to provide a starting material of a sintered compound, with which a sintered compound can be produced in a simple manner, which generally has good adhesion in particular on copper surfaces and on precious metal surfaces.
  • the starting material according to the invention of a sintered compound comprises sinterable particles of at least one metal or at least one metal compound and at least one flux in the function of a reducing agent. Characteristic of the invention is that the flux is at the same time the solvent of the starting material.
  • the solvent which is usually provided in a starting material of a sintered compound, replaced by the use of the flux - in particular completely. It should preferably be provided no solvent in addition to the flux in the material.
  • the flux contained in the starting material is advantageously capable of reducing (ie, deoxidizing) the surface of a joining partner on which the starting material is applied on sintering, preventing re-oxide formation on the surface before and during the sintering process, and To reduce inclusions of foreign substances.
  • the function of the flux differs fundamentally from that of the commonly used solvent, which is by definition inert to the dissolved or dispersed constituents.
  • an oxide-free surface of the joining partner is ensured by means of the flux provided in the starting material, so that the sintered connection to be formed adheres to it can.
  • the flux is also able to act as a reducing agent with respect to the particles contained in the starting material.
  • particles containing a metal compound, in particular an oxide compound are reduced to the elemental metal. In this way, it is ensured that the particles contained in the starting material, in particular at their contact surfaces to each other, have particularly good conditions for sintering.
  • rosin rosin-based resin systems or systems based on carboxylic acids
  • carboxylic acids having 2-50 carbon atoms and with up to two aromatic rings, such as benzoic acid, citric acid, adipic acid, cinnamic acid and benzylic acid
  • Fatty acids for example saturated fatty acids, such as oleic acid, myristic acid, palmitic acid, margaric acid, stearic acid or arachic acid
  • dicarboxylic acids for example malonic acid, maleic acid, octanoic, nonanoic, dodecanoic acid
  • amino acids for example glutamic acid, hydroxycarboxylic acids, for example Lactic acid, naphthols, enols, phenols, amines, such as 6-100 carbon amines, which may preferably be tertiary, alcohols, such as glycol or glycerin.
  • the flux is non-volatile at storage temperature, such as room temperature.
  • the flux is selected such that a reduction process described above is still below the sintering temperature of the particles contained in the starting material.
  • the volume ratio of particles used to flux used in the starting material according to the invention for example, 1: 1. However, it can also be varied, for example, to adjust the viscosity and the sintering properties in a wide range.
  • the proportion by weight of the flux based on the total weight of the starting material may for example be between 5% by weight and 40% by weight.
  • the proportion of the flux is preferably in the range of 5-20% by weight, more preferably in the range of 7-18% by weight and particularly preferably in the range of 9-16% by weight, based on the weight of the starting material.
  • a particularly high thermal and / or electrical conductivity of the sintered compounds produced from the starting material according to the invention then results.
  • due to the reduction process only small amounts of gaseous by-products accumulate.
  • the sinterable particles are particularly high thermal and / or electrical conductivity of the sintered compounds produced from the starting material according to the invention.
  • Suitable metal particles are flakes or powders with particle sizes in the nanometer or micrometer range.
  • the sinterable particles may be selected, for example, based on silver, copper or aluminum and mixtures thereof which are readily soluble in one another, such as Cu / Ag, Au / Ag, Cu / Au, Ag / Au, Ag / Pd, and Pd / Pt.
  • metal compounds, in particular oxide compounds, of the aforementioned materials are also conceivable.
  • the sinterable particles can be coated with an organic material, with an organic metal compound and / or with a metal oxide or with a mixture thereof.
  • the coating of the sinterable particles as organic material can be a primary or secondary alcohol, an amine, an organic acid and / or a fatty acid, in particular isostearic acid, stearic acid, oleic acid, lauric acid, myristic acid, palmitic acid, octanoic acid , Decanoic acid or a mixture thereof.
  • the reducing effect of the flux can be positively influenced with regard to the surface of the sinterable particles made available in situ.
  • a silver carbonate, a silver lactate, a silver stearate or a sodium carbonate is present as the organic metal compound and / or silver oxide or copper oxide as the noble metal oxide, in particular as a coating on the particles.
  • these are
  • the sintered compound formed in this way from the starting material has a particularly high thermal and / or electrical conductivity.
  • the sinterable particles are preferably spherical and / or platelet-shaped.
  • a mixture of such particle geometries optionally together with spherical particles allows a high density of the sintered compound formed from the starting material.
  • the flux is an organic acid, in particular an aromatic carboxylic acid such as, for example, benzoic acid, formic acid, acetic acid, malonic acid, maleic acid, octanoic, nonanoic, dodecanoic acid; Glutamic acid, citric acid, adipic acid, cinnamic acid or lactic acid.
  • aromatic carboxylic acid such as, for example, benzoic acid, formic acid, acetic acid, malonic acid, maleic acid, octanoic, nonanoic, dodecanoic acid
  • Glutamic acid citric acid, adipic acid, cinnamic acid or lactic acid.
  • the starting material is preferably provided as a paste.
  • the viscosity of the paste is significantly adjustable by the admixed flux or a flux mixture.
  • the invention further relates to a sintered compound prepared from a starting material as described above, wherein the sintered compound has an electrical conductivity between 30 MS / m and 45 MS / m, in particular between 36 MS / m and 44 MS / m.
  • a sintered compound made of a raw material as described above may have a thermal conductivity between 200 W / mK and 300 W / mK.
  • the thermal conductivity of the sintered connection can be between 220 W / mK and 275 W / mK.
  • the sintered compound may be a silver sintered compound.
  • the silver sintered compound is formed from a starting material containing particles of silver and / or silver compounds and formic acid as a flux.
  • formic acid is present in Partially excellent chemical reactivity to oxides and is easy to evaporate residue.
  • a silver sintered bonding layer is particularly preferred because silver particles are readily sinterable and processable with excellent electrical and thermal conductivity properties and mechanical properties of the sintered layer.
  • the invention further relates to an electronic circuit with a sintered connection as described above, wherein the electronic circuit is the sintered connection as an electrical, thermal and / or mechanical connection of an electronic component to, in particular, a copper component or a component with copper surface.
  • a sintered compound which is made from the starting material according to the invention, can achieve a very good adhesion.
  • the flux which in particular keeps the copper surface oxide-free during the joining operation, is provided sufficiently and the contacting of the surface to be joined is not disturbed by additionally present solvent, which develops additional volumes of vapor during the joining process.
  • the invention further relates to a method for forming a thermally and / or electrically conductive sintered compound.
  • a starting material of the type described which is brought between, for example, two joining partners.
  • Preferred joining partners are electrical and / or electronic components with contact points, which are brought into direct physical contact with the starting material.
  • the starting material can be applied in the form of a printing paste, for example by means of screen or stencil printing on the contact points.
  • the order is possible through injection or dispensing.
  • the sintered compound by a temperature treatment of the
  • the temperature treatment can be in one Step by step or in several steps. Typically, the temperatures in this step in the range of 150 ° C to about 350 ° C, in particular, the components to be joined and their materials represent an upward limiting factor, since a deterioration of the electronic components by the temperature treatment is to be avoided ,
  • Bonding partners with contact points made of a noble metal for example gold, silver or an alloy of gold or silver, are preferably provided. More preferably, contact points are provided with a copper surface.
  • the flux can then cause a reduction in particular of possible oxides on the surface of the joining partner and / or on the surface of the sinterable particles, which results in improved results of the resulting assembly.
  • the flux can dissolve a possibly present coating of the sinterable particles in order to activate them for the subsequent sintering step. This can be done, for example, by the flux catalyzing a combustion reaction of the coating, bringing the coating into the liquid phase and thereby allowing it to evaporate more easily or bonding to the coating to form an inert material.
  • the component to be joined can first be immersed in a bath of pure flux at least with the surface to be joined, and then the starting material is provided on the joining surface.
  • Fig. 1 shows schematically the starting material according to the present invention in the form of a paste
  • Fig. 2 shows schematically an electronic circuit according to the present invention.
  • FIG. 1 schematically shows a starting material 100 of a sintered compound 12 according to the present invention in paste form, which comprises sinterable particles 102 of at least one metal or at least one metal compound and at least one flux 103.
  • the flux 103 is at the same time the solvent of the starting material 100, which can advantageously be used in particular on copper surfaces.
  • the sinterable particles 102 may in particular contain silver, gold, platinum, palladium and / or copper and have an optional coating 105 which is formed from an organic material, with an organic metal compound and / or with a metal oxide or a mixture thereof.
  • the optional coating 105 of the sinterable particles 102 may contain as organic material a primary or secondary alcohol, an amine, an organic acid and / or a fatty acid, in particular isostearic acid, stearic acid, oleic acid, lauric acid or a mixture thereof.
  • the coating 105 may contain silver carbonate, silver lactate, silver stearate or sodium carbonate, and as the metal oxide, the optional coating 105 of the sinterable particles 102 may include, in particular, silver oxide or copper oxide.
  • the flux 103 is preferably an organic acid, in particular an aromatic carboxylic acid, such as benzoic acid, formic acid, acetic acid, citric acid, adipic acid, cinnamic acid, a dicarboxylic acid, such as malonic acid, maleic acid, octanoic, nonanoic, dodecanoic acid; an amino acid such as glutamic acid, a hydroxycarboxylic acid acid, such as lactic acid, or a naphthol, enol or phenol, and preferably liquid or liquefiable at drying or sintering temperatures.
  • aromatic carboxylic acid such as benzoic acid, formic acid, acetic acid, citric acid, adipic acid, cinnamic acid, a dicarboxylic acid, such as malonic acid, maleic acid, octanoic, nonanoic, dodecanoic acid
  • an amino acid such as glutamic acid, a hydroxycarboxylic
  • FIG. 2 schematically shows an electronic circuit with a sintered connection 112 made of the starting material of the present invention, the electronic circuit comprising the sintered connection 112 as electrical, thermal and / or mechanical connection of an electronic component 110 to, in particular, a copper component or a component with a copper surface 1 11 includes.
  • the starting material for the sintered compound 1 12 is in the form of a printing paste or an ink-jet ink or as a molded part and was applied with a printing or adhesive or with a lamination process on the components to be joined 11 1 and 1 10 or contacted with these. Subsequently, the sintered compound 1 12 is formed by temperature and / or pressurization of the starting material.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Conductive Materials (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

L'invention concerne une liaison frittée, un matériau de base d'une liaison frittée et un procédé de réalisation d'une liaison frittée, ainsi qu'un circuit électronique contenant une telle liaison frittée, le matériau de base comprenant des particules frittables (102), constituées d'au moins un métal ou d'au moins un composé métallique, et au moins un fondant (103). Selon l'invention, le fondant (103) est un agent de réduction et en même temps le solvant du matériau de base (100).
EP12766629.5A 2011-09-30 2012-09-21 Matériau de base d'une liaison frittée et procédé de réalisation d'une liaison frittée Withdrawn EP2760611A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011083893A DE102011083893A1 (de) 2011-09-30 2011-09-30 Ausgangswerkstoff einer Sinterverbindung und Verfahren zur Herstellung der Sinterverbindung
PCT/EP2012/068644 WO2013045360A1 (fr) 2011-09-30 2012-09-21 Matériau de base d'une liaison frittée et procédé de réalisation d'une liaison frittée

Publications (1)

Publication Number Publication Date
EP2760611A1 true EP2760611A1 (fr) 2014-08-06

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EP12766629.5A Withdrawn EP2760611A1 (fr) 2011-09-30 2012-09-21 Matériau de base d'une liaison frittée et procédé de réalisation d'une liaison frittée

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EP (1) EP2760611A1 (fr)
DE (1) DE102011083893A1 (fr)
WO (1) WO2013045360A1 (fr)

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Publication number Priority date Publication date Assignee Title
DE102024113821A1 (de) 2024-05-16 2025-11-20 STANNOL GmbH & Co. KG Paste zum Herstellen einer Fügeverbindung sowie Verwendung dieser Paste und Verfahren zur Herstellung einer Fügeverbindung

Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2005079353A2 (fr) * 2004-02-18 2005-09-01 Virginia Tech Intellectual Properties, Inc. Pate metallique nanometrique pour interconnexion et procede d'utilisation
WO2010020400A2 (fr) * 2008-08-22 2010-02-25 W. C. Heraeus Gmbh Matière constituée de métal et de condensat d'acide lactique, ainsi que composant électronique
DE102009040078A1 (de) * 2009-09-04 2011-03-10 W.C. Heraeus Gmbh Metallpaste mit CO-Vorläufern

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US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
US6951666B2 (en) * 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
CN100428368C (zh) 2001-12-27 2008-10-22 株式会社藤仓 导电性组合物、导电性覆膜和导电性覆膜的形成方法
JP5006081B2 (ja) * 2007-03-28 2012-08-22 株式会社日立製作所 半導体装置、その製造方法、複合金属体及びその製造方法
DE102007046901A1 (de) 2007-09-28 2009-04-09 W.C. Heraeus Gmbh Verfahren und Paste zur Kontaktierung von Metallflächen
DE102009040076A1 (de) * 2009-09-04 2011-03-10 W.C. Heraeus Gmbh Metallpaste mit Oxidationsmittel

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Publication number Priority date Publication date Assignee Title
WO2005079353A2 (fr) * 2004-02-18 2005-09-01 Virginia Tech Intellectual Properties, Inc. Pate metallique nanometrique pour interconnexion et procede d'utilisation
WO2010020400A2 (fr) * 2008-08-22 2010-02-25 W. C. Heraeus Gmbh Matière constituée de métal et de condensat d'acide lactique, ainsi que composant électronique
DE102009040078A1 (de) * 2009-09-04 2011-03-10 W.C. Heraeus Gmbh Metallpaste mit CO-Vorläufern

Non-Patent Citations (1)

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See also references of WO2013045360A1 *

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DE102011083893A1 (de) 2013-04-04
WO2013045360A1 (fr) 2013-04-04

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