EP2451755A1 - Procede de depôt par pulverisation cathodique, produit obtenu et cible de pulverisation - Google Patents
Procede de depôt par pulverisation cathodique, produit obtenu et cible de pulverisationInfo
- Publication number
- EP2451755A1 EP2451755A1 EP10732348A EP10732348A EP2451755A1 EP 2451755 A1 EP2451755 A1 EP 2451755A1 EP 10732348 A EP10732348 A EP 10732348A EP 10732348 A EP10732348 A EP 10732348A EP 2451755 A1 EP2451755 A1 EP 2451755A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- bismuth
- metal
- oxide
- target
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000000151 deposition Methods 0.000 title claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 9
- 230000008021 deposition Effects 0.000 title claims description 10
- 238000005477 sputtering target Methods 0.000 title claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000001699 photocatalysis Effects 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 10
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052720 vanadium Inorganic materials 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000010791 quenching Methods 0.000 claims description 3
- 230000000171 quenching effect Effects 0.000 claims description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 150000002829 nitrogen Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000007146 photocatalysis Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 230000016571 aggressive behavior Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- -1 gray Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/218—V2O5, Nb2O5, Ta2O5
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/219—CrOx, MoOx, WOx
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/228—Other specific oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/71—Photocatalytic coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
Definitions
- the invention relates to the field of thin films deposited on a substrate to give it surface properties. It relates more particularly to the deposition of photocatalytic layers of mixed oxide of bismuth and another metal.
- the aim of the invention is to provide coatings based on such materials, in particular coatings which can be very thin and retain their integrity by resisting mechanical or chemical aggression such as handling, abrasion, contact with pollutants or contaminants. cleaning products.
- the subject of the invention is a process for obtaining a substrate coated with a photocatalytic layer based on a mixed oxide of bismuth and of at least one metal other than bismuth, comprising at least one deposition step of said oxide by a sputtering technique.
- the subject of the invention is also a substrate coated with a photocatalytic layer based on a mixed oxide of bismuth and of at least one metal other than bismuth, obtainable by the method according to the invention.
- the substrate is preferably glass, in particular is a glass sheet. Any type of material is however usable, such as ceramic, metal, polymeric organic material.
- the substrate is preferably transparent or translucent. For this reason, glass or polymeric organic materials such as polycarbonate or polymethylmethacrylate are preferred.
- the glass sheet has at least one dimension greater than 1 meter, or even 2 or 3 meters. Its thickness is preferably between 0.5 and 19 mm, in particular between 3 and 9 mm.
- the glass may be in particular of the silico-soda-lime type, or else borosilicate or alumino-borosilicate type.
- the glass may be clear or extra-clear, or colored, for example in blue, bronze, gray, amber, rosé ...
- the glass sheet may especially be annealed, hardened, tempered, curved.
- the substrate may be flat or curved.
- the mixed bismuth metal oxide is preferably a defined compound, in the sense that the composition of the metal is selected so as to allow crystallization of the mixed oxide in a uniform phase.
- a defined compound is a perfectly determined compound of stoichiometry, behaving like a pure body, in the sense that it melts at a constant temperature at a given pressure. These compounds are in fact the most likely to exhibit strong photocatalytic activities.
- the defined compound is preferably crystallized.
- the mixed oxide is preferably a mixed oxide of bismuth and a single metal other than bismuth.
- At least one metal other than bismuth is preferably selected from transition metals, alkali metals or alkaline earth metals.
- the or each metal other than bismuth is in particular chosen from vanadium, tungsten, niobium, tantalum, calcium, barium and sodium. Vanadium and tungsten give the best results.
- the mixed oxide of bismuth and of at least one metal other than bismuth is preferably selected from BiVO 4 , Bi 2 WO 6 , BiNbO 4 , BiTaO 4 , CaBi 2 O 4 , BaBiO 3 , NaBiO 3 .
- These compounds, in particular BiVO 4 and Bi 2 WO 6 are the most effective in terms of photocatalysis activated by visible light.
- the BiVO 4 mixed oxide is preferably crystallized in the scheelite form (monoclinic phase).
- the thickness of the layer is preferably between 1 nm and 1 micrometer, especially between 2 and 50 nm, or even between 5 and 20 nm or between 5 and 15 nm and even between 5 and 10 nm or between 10 and 20 nm. The choice of small thicknesses mitigates the effects of reflection and absorption of visible light.
- the deposition of the oxide is preferably carried out by a magnetron sputtering technique, in particular of the DC (direct current), DC pulsed (the polarity being reversed periodically for a time of the order of 0.1 to 10 ⁇ s at a frequency ranging from 10 to 500 kHz) or RF (radio frequency).
- DC direct current
- DC pulsed the polarity being reversed periodically for a time of the order of 0.1 to 10 ⁇ s at a frequency ranging from 10 to 500 kHz
- RF radio frequency
- the deposition step may be followed by a heat treatment step, in particular of the annealing, quenching or bending.
- the annealing may be a rapid annealing as described in the application WO 2008/096089, for example using a laser, a flaming bench or a plasma torch.
- This heat treatment step preferably carries the layer at a temperature of at least 200 ° C., in particular 300 ° C., or even more than 600 ° C. in the case of quenching or bending. This step can improve the crystallization characteristics of the layer by facilitating the growth of crystals around seeds that may already be present after deposition.
- the substrate according to the invention may be coated with a layer based on mixed bismuth oxide and a metal on only one of its faces, or on both sides, or on only a portion of a face and / or or the other side.
- the substrate according to the invention may be coated, on the same or the other face, with at least one other layer, or even one stack of layers.
- a layer or a low-emissive stack including at least one layer of silver
- solar control for example a solar control, antireflection, antistatic, electrically conductive, reflective (for example a layer silver mirror), or a coat of paint, lacquer or enamel.
- one or more sub-layers may be deposited under the layer based on mixed bismuth oxide and a metal. It can especially be barrier layers to the migration of alkali from the substrate, which can be a poison of photocatalysis. It can also be a layer or several layers intended to attenuate the light reflection of the layer based on mixed bismuth oxide and a metal and / or to obtain a neutral or slightly bluish tint in reflection. In this case, preferably implements interferential phenomena by alternating high index and low refractive index layers. It may also be a layer intended to promote the growth of the layer based on mixed oxide of bismuth and a metal according to the desired crystalline phase.
- the layer based on a mixed oxide of bismuth and a metal is preferably the layer furthest from the substrate, thus in contact with the ambient air. In this way, it will be better able to interact with the pollutants of the atmosphere and to fulfill its function of depollution or self-cleaning.
- the other layers deposited on one or the other of the faces of the substrate are preferably by cathode sputtering, especially magnetron sputtering.
- the invention also relates to glazing, in particular for the building, vehicles (rear windows, side windows, roofs) or furniture (for example partitions, doors, refrigerator shelves), a mirror, a glass wall cladding comprising at least one substrate according to the invention.
- the glazing may in particular be simple, multiple (for example a double or triple glazing), or laminated.
- the subject of the invention is also a target for sputtering comprising oxygen, bismuth and at least one metal other than bismuth.
- This target is intended to be used in the implementation of the method according to the invention.
- the target is advantageously essentially composed of oxygen, bismuth and a metal other than bismuth.
- at least one metal (or the or each metal) other than bismuth is selected from transition metals, alkali metals or alkaline earth metals.
- At least one metal other than bismuth is in particular chosen from vanadium, tungsten, niobium, tantalum, calcium, barium and sodium.
- powders of at least one mixed oxide of bismuth and at least one metal other than bismuth are agglomerated.
- the raw material is a powder of a mixed oxide already containing bismuth and the or each metal other than bismuth.
- the mixed oxide powders can then be shaped by agglomeration, in particular pressing and sintering to obtain the targets according to the invention.
- Pressing or sintering can implement pressures of up to several hundred bars and temperatures typically between 700 and 1500 0 C.
- bismuth oxide powders and powders of at least one oxide of a metal other than bismuth are agglomerated.
- oxide powders thus with bismuth oxide powders and with oxide powders of a metal, for example vanadium or tungsten.
- the powders are shaped by agglomeration, in particular pressing and sintering to obtain the targets according to the invention.
- one can agglomerate powders of a mixed oxide of bismuth and a metal and powders of a metal oxide.
- a target can be formed by agglomerating bismuth and vanadium mixed oxide powders with vanadium oxide powders.
- the pulsed DC or DC cathode sputtering technique requires the use of conductive targets, or in any case having a low resistivity.
- the target can be made conductive by various means. It can in particular be rendered substoichiometric in oxygen, for example using a heat treatment in a neutral atmosphere (argon, nitrogen ...) or reducing (for example hydrogenated nitrogen).
- the target can be made conductive by doping with atoms (doping p or n), including aluminum, silver or copper.
- the target may have the same stoichiometry as the final layer, or a different stoichiometry.
- This second alternative makes it easier to adapt to possible differences in volatility during sintering and / or spray speeds between the bismuth and the other metal.
- the respective amounts of bismuth oxide and metal oxide in the target can be easily adapted to the conditions of the sputtering to ultimately obtain the desired stoichiometry at the layer.
- Particles of the BiVO 4 chemical formula are prepared in the following manner.
- a solution of 500 ml of bismuth at 0.1 mol. L "1 is prepared by dissolving Bi (NO 3) 3.5H 2 O in nitric acid to 0.75 mol. L" 1.
- 4.6 g of V 2 O 5 are added thereto so as to obtain a vanadium concentration of 0.1 mol. L "1 in the reaction mixture.
- the mixture was stirred at room temperature for 72 hours before being centrifuged, washed three times with water and dried under stream of nitrogen.
- the resulting particles are monoclinic scheelite structure.
- the particles are prismatic and of size varying between 0.1 and 1 ⁇ m.
- the particles are then used to make a sputtering target.
- 100 g of BiVO 4 powder are compacted under a pressure of 5 bar using a hydraulic press to obtain a pellet of 10 cm in diameter and about 1 cm. thick.
- the pellet obtained is sintered by carrying out a first thermal treatment in air up to 900 ° C. for 24 hours followed by a second heat treatment at 900 ° C. under nitrogen for 24 hours. This nitrogen treatment makes it possible to reduce the resistivity of the target.
- the target thus produced can be used in the context of a sputter deposition.
- a base vacuum is created in a chamber in the deposition chamber (10 ⁇ 7 to 10 ⁇ 5 mbar), and then a stream of argon is injected. and oxygen in the chamber, regulating the pressure in the chamber at a constant pressure (1 to 10 ⁇ bar).
- a clear silico-soda-lime glass substrate is introduced into the chamber and the target is polarized according to the chosen mode (DC, pulsed DC or RF), which creates a plasma and results in the spraying of the BiVO target. 4 on the substrate positioned facing the target.
- DC pulsed DC or RF
- the proportion of argon and oxygen can be chosen to adjust the oxygen composition of the layer (the target is already depleted of oxygen to make it conductive and the process used in pure Ar can further reduce the amount of oxygen. oxygen present in the layer relative to the target).
- a photocatalytic layer of bismuth oxide and vanadium deposited on a glass substrate is thus obtained.
- the coated substrate can be integrated into all types of glazing.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Physical Vapour Deposition (AREA)
- Catalysts (AREA)
- Surface Treatment Of Glass (AREA)
- Laminated Bodies (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0954756A FR2947816B1 (fr) | 2009-07-09 | 2009-07-09 | Procede de depot par pulverisation cathodique, produit obtenu et cible de pulverisation |
| PCT/EP2010/059810 WO2011003974A1 (fr) | 2009-07-09 | 2010-07-08 | Procede de depôt par pulverisation cathodique, produit obtenu et cible de pulverisation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2451755A1 true EP2451755A1 (fr) | 2012-05-16 |
Family
ID=41632108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP10732348A Withdrawn EP2451755A1 (fr) | 2009-07-09 | 2010-07-08 | Procede de depôt par pulverisation cathodique, produit obtenu et cible de pulverisation |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120258858A1 (fr) |
| EP (1) | EP2451755A1 (fr) |
| JP (1) | JP2012532985A (fr) |
| CN (1) | CN102471143A (fr) |
| FR (1) | FR2947816B1 (fr) |
| WO (1) | WO2011003974A1 (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102596399B (zh) | 2009-10-01 | 2015-04-08 | 耶达研究及发展有限公司 | 用贵金属多金属氧酸盐络合物的脂肪伯醇的氧化 |
| JP6044992B2 (ja) * | 2013-06-28 | 2016-12-14 | 国立研究開発法人産業技術総合研究所 | 可視光応答性組成物とこれを用いた光電極、光触媒、光センサー |
| JP2015059049A (ja) * | 2013-09-17 | 2015-03-30 | 株式会社豊田中央研究所 | 半導体材料、光電極材料、光触媒材料、半導体材料の製造方法 |
| JP6291823B2 (ja) * | 2013-12-10 | 2018-03-14 | 大日本印刷株式会社 | 光触媒機能材料の製造方法 |
| CN104923214B (zh) * | 2015-05-13 | 2018-04-27 | 武汉理工大学 | 一种钨酸铋光催化薄膜及其制备方法 |
| CN105344348A (zh) * | 2015-09-08 | 2016-02-24 | 徐州医学院 | 一种具有可见光催化特性的BiVO4薄膜制备方法 |
| CN105679880A (zh) * | 2016-01-19 | 2016-06-15 | 新疆中兴能源有限公司 | 一种光解水用大面积钒酸铋薄膜的简易制备方法 |
| CN105463396A (zh) * | 2016-01-19 | 2016-04-06 | 新疆中兴能源有限公司 | 一种直流磁控溅射制备光解水用钒酸铋薄膜的方法 |
| US10179946B2 (en) * | 2017-03-03 | 2019-01-15 | Guardian Glass, LLC | Coated article having low-E coating with IR reflecting layer(s) and niobium bismuth based high index layer and method of making same |
| CN107354476A (zh) * | 2017-06-27 | 2017-11-17 | 青岛鲁润中科环境工程技术开发有限公司 | 铁基双金属氢氧化物/钒酸铋光阳极的制备方法及其应用 |
| US11072855B2 (en) * | 2017-08-04 | 2021-07-27 | Royal Melbourne Institute Of Technology | Vanadium oxide films and methods of fabricating the same |
| CN109078633A (zh) * | 2018-08-24 | 2018-12-25 | 西南交通大学 | 一种W掺杂Bi2O3纳米结构的制备方法 |
| CN110444402B (zh) * | 2019-07-09 | 2020-09-25 | 淮阴工学院 | 一种提高BiVO4光阳极光电化学性能的方法 |
| CN112725750B (zh) * | 2020-12-12 | 2022-02-11 | 河南大学 | 利用磁控溅射技术制备bvo外延单晶薄膜的方法 |
| CN114196916B (zh) * | 2021-12-16 | 2024-05-07 | 西湖大学 | 一种金属反射镜的制备方法以及金属反射镜 |
| CN115896851B (zh) * | 2022-11-25 | 2025-07-25 | 南京航空航天大学 | 一种光电催化光阳极纳米材料及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006034739A2 (fr) * | 2004-09-24 | 2006-04-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Procede pour revetir sous vide au moyen d'une couche photo-semi-conductrice, et applications du procede |
| US20070184576A1 (en) * | 2005-11-29 | 2007-08-09 | Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
| US20080006525A1 (en) * | 2004-07-21 | 2008-01-10 | Saint-Gobain Glass France | Non-Oxidised Electrolyte Electrochemical System |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3140100C2 (de) * | 1981-10-09 | 1986-11-27 | Robert Bosch Gmbh, 7000 Stuttgart | Mehrschichtsystem für Wärmeschutzanwendung |
| JPH1192922A (ja) * | 1997-09-16 | 1999-04-06 | Toshiba Corp | 誘電体膜形成用スパッタリングターゲット、その製造方法および強誘電体メモリの製造方法 |
| JP2003311157A (ja) * | 2002-04-18 | 2003-11-05 | Toyota Central Res & Dev Lab Inc | 金属酸化物光触媒体及びその製造方法 |
| JP4203288B2 (ja) * | 2002-09-18 | 2008-12-24 | 旭化成ケミカルズ株式会社 | 光触媒フィルム、および該光触媒フィルムが貼付された部材 |
| JP4208666B2 (ja) * | 2003-07-18 | 2009-01-14 | エスケー化研株式会社 | バナジン酸ビスマス微粒子の製造方法 |
| FR2857885B1 (fr) * | 2003-07-23 | 2006-12-22 | Saint Gobain | Procede de preparation d'un revetement photocatalytique integre dans le traitement thermique d'un vitrage |
| JP2005058941A (ja) * | 2003-08-18 | 2005-03-10 | Asahi Kasei Chemicals Corp | 防汚性プラズマディスプレイパネル |
| FR2868770B1 (fr) * | 2004-04-09 | 2006-06-02 | Saint Gobain | Substrat, notamment substrat verrier, portant une couche a propriete photocatalytique modifiee pour pouvoir absorber des photons du visible |
| FR2868792B1 (fr) * | 2004-04-13 | 2006-05-26 | Saint Gobain | Substrat photocatalytique actif sous lumiere visible |
| WO2006064799A1 (fr) * | 2004-12-13 | 2006-06-22 | Osaka University | Photocatalyseur d'oxyde de metal composite presentant des attribution au niveau de la lumiere visible |
| CN1308070C (zh) * | 2005-05-19 | 2007-04-04 | 武汉理工大学 | 制备具有可见光活性纳晶Bi2WO6粉末光催化材料的水热-热处理方法 |
| JP2007117999A (ja) * | 2005-09-29 | 2007-05-17 | Sumitomo Metal Ind Ltd | 酸化チタン系光触媒とその用途 |
| JP5332099B2 (ja) * | 2006-11-20 | 2013-11-06 | 日産自動車株式会社 | 自動車用光触媒システム |
| FR2911130B1 (fr) | 2007-01-05 | 2009-11-27 | Saint Gobain | Procede de depot de couche mince et produit obtenu |
| KR101563197B1 (ko) * | 2007-09-14 | 2015-10-26 | 카디날 씨지 컴퍼니 | 관리 용이한 코팅 및 이의 제조방법 |
| US20100155218A1 (en) * | 2008-12-12 | 2010-06-24 | University Of South Carolina | Novel Photocatalysts that Operate Under Visible Light |
-
2009
- 2009-07-09 FR FR0954756A patent/FR2947816B1/fr not_active Expired - Fee Related
-
2010
- 2010-07-08 US US13/382,954 patent/US20120258858A1/en not_active Abandoned
- 2010-07-08 CN CN201080030853XA patent/CN102471143A/zh active Pending
- 2010-07-08 WO PCT/EP2010/059810 patent/WO2011003974A1/fr not_active Ceased
- 2010-07-08 EP EP10732348A patent/EP2451755A1/fr not_active Withdrawn
- 2010-07-08 JP JP2012518993A patent/JP2012532985A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080006525A1 (en) * | 2004-07-21 | 2008-01-10 | Saint-Gobain Glass France | Non-Oxidised Electrolyte Electrochemical System |
| WO2006034739A2 (fr) * | 2004-09-24 | 2006-04-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Procede pour revetir sous vide au moyen d'une couche photo-semi-conductrice, et applications du procede |
| US20070184576A1 (en) * | 2005-11-29 | 2007-08-09 | Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2011003974A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011003974A1 (fr) | 2011-01-13 |
| FR2947816A1 (fr) | 2011-01-14 |
| FR2947816B1 (fr) | 2011-07-22 |
| JP2012532985A (ja) | 2012-12-20 |
| CN102471143A (zh) | 2012-05-23 |
| US20120258858A1 (en) | 2012-10-11 |
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