EP1887108A1 - Procede et dispositif de cuivrage de cylindre de gravure - Google Patents
Procede et dispositif de cuivrage de cylindre de gravure Download PDFInfo
- Publication number
- EP1887108A1 EP1887108A1 EP06756465A EP06756465A EP1887108A1 EP 1887108 A1 EP1887108 A1 EP 1887108A1 EP 06756465 A EP06756465 A EP 06756465A EP 06756465 A EP06756465 A EP 06756465A EP 1887108 A1 EP1887108 A1 EP 1887108A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- gravure cylinder
- copper plating
- anode
- copper
- anode chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000007747 plating Methods 0.000 title claims abstract description 203
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 143
- 239000010949 copper Substances 0.000 title claims abstract description 143
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000654 additive Substances 0.000 claims abstract description 16
- 230000002093 peripheral effect Effects 0.000 claims abstract description 13
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims description 77
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 60
- 239000007788 liquid Substances 0.000 claims description 41
- 230000007246 mechanism Effects 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 23
- 230000005484 gravity Effects 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 14
- 229960004643 cupric oxide Drugs 0.000 claims description 12
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 11
- 230000002378 acidificating effect Effects 0.000 claims description 10
- 239000008151 electrolyte solution Substances 0.000 claims description 10
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 238000005341 cation exchange Methods 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 208000010201 Exanthema Diseases 0.000 abstract description 10
- 201000005884 exanthem Diseases 0.000 abstract description 10
- 206010037844 rash Diseases 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000004090 dissolution Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000007639 printing Methods 0.000 description 7
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000457 iridium oxide Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010424 printmaking Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/04—Tubes; Rings; Hollow bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41N—PRINTING PLATES OR FOILS; MATERIALS FOR SURFACES USED IN PRINTING MACHINES FOR PRINTING, INKING, DAMPING, OR THE LIKE; PREPARING SUCH SURFACES FOR USE AND CONSERVING THEM
- B41N3/00—Preparing for use and conserving printing surfaces
- B41N3/03—Chemical or electrical pretreatment
- B41N3/032—Graining by laser, arc or plasma means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/06—Filtering particles other than ions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
- C25D21/14—Controlled addition of electrolyte components
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/16—Regeneration of process solutions
- C25D21/18—Regeneration of process solutions of electrolytes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/04—Electroplating with moving electrodes
Definitions
- the present invention relates to a copper plating method and apparatus for a gravure cylinder for providing an outer peripheral surface of a hollow cylindrical gravure cylinder (also called a plate-making roll), used for gravure printing, with copper plating as a printing material for forming a printing surface, and more particularly, to a copper plating method and apparatus for a gravure cylinder, in which copper plating is provided using an insoluble anode.
- a hollow cylindrical gravure cylinder also called a plate-making roll
- a gravure cylinder In gravure printing, minute concave portions (cells) are formed on a gravure cylinder in accordance with plate-making information to produce a printing surface, and the cells are filled with ink so that the ink is transferred to an object to be printed.
- a cylindrical iron core or aluminum core is used as a base, a plurality of layers such as an underlying layer and a peeling layer are formed on an outer peripheral surface of the base, and a copper plating layer (printing material) for forming a printing surface is formed on the plurality of layers.
- a phosphorus-containing copper ball used in a copper plating method and apparatus for a gravure cylinder contains 350 to 700 ppm of phosphorus and 2 to 5 ppm of oxygen, and the rest of the ball is composed of copper and impurities. Due to the impurities contained in the ball inevitably, anode sludge is generated during a plating treatment, which causes defects such as rashes (minute protrusions) and pits (pinholes) on the outer peripheral surface of the gravure cylinder. Although there is a phosphorus-containing copper ball of high purity for producing a semiconductor and the like, such a ball is expensive and is not adopted for a gravure cylinder in terms of cost-efficiency.
- a copper plating method using an insoluble anode is known.
- a plating method and apparatus for a gravure cylinder using an insoluble anode for example, a titanium plate coated with iridium oxide or the like as an insoluble anode is used, a plating bath and a copper dissolution bath are prepared, the copper plating material (e.g., copper oxide or copper carbide) are dissolved in the dissolution bath, the resultant solution is supplied to a plating solution in the plating bath, and a current is supplied between an insoluble anode and a gravure cylinder forming a cathode, whereby copper plating is provided (for example, see Patent Document 3).
- the copper plating material e.g., copper oxide or copper carbide
- anode sludge is not generated so that defects such as rashes and pits are not caused, however, there is still a problem that the peripheral surface in the vicinity of both ends of a gravure cylinder is plated thickly.
- the applicant of the present invention has already proposed a copper plating method and apparatus for a gravure cylinder in which an insoluble anode positioned below a gravure cylinder is configured so as to be lifted in a plating bath, the insoluble anode is brought close to a lower surface of the gravure cylinder with a gap of 5 mm to 30 mm in accordance with gravure cylinders of various sizes, whereby a current is not concentrated in the vicinity of both ends of the gravure cylinder, plating with a uniform thickness can be provided over the full length of the gravure cylinder, and the concentration of copper and the concentration of sulfuric acid in the plating solution can be adjusted automatically (Patent Document 4).
- the consumption amount of additives such as a brightener and a burn stopping agent is remarkably large (for example, the consumption amount is about 100 cc/1000 AH in a case of using a phosphorus-containing ball as a soluble anode, whereas the consumption amount is about 600 cc/1000 AH in a case of setting an insoluble anode directly in a plating solution).
- a current density is about 15 to 20 A/dm 2 and a voltage is 10 to 15 V for the purpose of preventing a burn, a plating treatment takes a long time, which results in a large power supply cost.
- the uniformity of a plating thickness is insufficient. Since the insoluble anode is positioned below the gravure cylinder, visibility is poor, and operability is poor.
- Patent Document 1 JP 57-36995 B
- Patent Document 2 JP 11-61488 A
- Patent Document 3 JP 2005-29876 A
- Patent Document 4 JP 2005-133139 A
- the present invention has been achieved in view of the above-mentioned problems, and it is an object of the present invention to provide a copper plating method and apparatus for a gravure cylinder in which copper plating with more uniform thickness can be provided over a full length of a gravure cylinder without causing defects such as rashes and pits irrespective of a size of the gravure cylinder, concentration of a copper plating solution can be managed automatically, a consumption amount of an additive is reduced to make it possible to perform a plating treatment within a short period of time, a power supply cost is reduced, and handling is easy with excellent visibility
- a copper plating method for a gravure cylinder comprises: holding a gravure cylinder in a hollow cylindrical shape at both ends in a longitudinal direction, accommodating the gravure cylinder in a plating bath filled with a copper plating solution; energizing the gravure cylinder so that the gravure cylinder functions as a cathode while being rotated at a predetermined speed; bringing a pair of anode chambers in a long box shape, in which insoluble anodes are provided upright slidably to both sides of the gravure cylinder in the plating bath and energized so as to function as an anode, close to both side surfaces of the gravure cylinder at a predetermined interval; and providing copper plating on an outer peripheral surface of the gravure cylinder.
- the insoluble anode is placed in an anode chamber without being directly set in a plating solution, and a slide-type anode chamber with a mechanism capable of sliding the anode chambers on both sides of a gravure cylinder is set, whereby copper plating can be provided under the condition that the anode chambers are brought close to both side surfaces of the gravure cylinder. Because of this, copper plating with more uniform thickness can be provided without having rashes and pits, the consumption amount of additives can be reduced, a plating thickness can be made uniform with respect to gravure cylinders of various sizes. The time and power supply cost for a plating treatment can be reduced, and anode chambers are positioned on both sides of a gravure cylinder, so visibility and operation are excellent.
- a cation exchange film is provided on a side surface of the anode chamber on the gravure cylinder side, and it is preferable that the anode chamber has a length equal to or larger than the full length of the gravure cylinder in a longitudinal direction. The reason for this is to provide copper plating with a uniform thickness over the full length of the gravure cylinder. Furthermore, it is desirable that the inside of the anode chamber is filled with an acidic electrolyte solution, and when the liquid amount in the anode chamber is measured to be insufficient, water is supplied.
- the copper plating solution contains copper sulfate, sulfuric acid, hydrochloric acid, and an additive, and when the specific gravity of the copper plating solution and the concentration of sulfuric acid are measured, in a case where the specific gravity is too high, water is supplied, and in a case where the concentration of sulfuric acid is too high, cupric oxide powder is supplied. This makes it unnecessary to perform the conventional periodical maintenance of a copper plating solution and disposal of a waste liquid. Furthermore, it is preferable that the copper plating solution is obtained by removing impurities with a filter.
- the predetermined interval is about 1 mm to 50 mm, preferably about 3 mm to 40 mm, and most preferably about 5 mm to 30 mm.
- the interval at which the anode chamber is brought close to the gravure cylinder side surface be small as much as possible. However, if the interval is too small, there is a fear that the anode chamber and the gravure cylinder may come into contact with each other during a plating treatment.
- the copper plating apparatus for a gravure cylinder provides an outer peripheral surface of a gravure cylinder with copper plating, and comprises: a plating bath filled with a copper plating solution; chuck means for holding the gravure cylinder in a hollow cylindrical shape at both ends in a longitudinal direction so that the gravure cylinder is capable of being rotated and energized, and accommodating the gravure cylinder in the plating bath; and a pair of anode chambers in a long box shape which are provided upright slidably to both sides of the gravure cylinder in the plating bath and in which an insoluble anode energized so as to function as an anode.
- a cation exchange film be provided on a side surface of the anode chamber on the gravure cylinder side and the anode chamber has a length equal to or larger than a full length of the gravure cylinder in a longitudinal direction thereof.
- an inside of the anode chamber be filled with an acidic electrolyte solution, and the apparatus further includes an anode chamber liquid amount supply mechanism that measures a liquid amount in the anode chamber and supplies water in a case where the liquid amount is insufficient.
- the copper plating solution contains copper sulfate, sulfuric acid, chlorine, and an additive
- the apparatus further includes a copper plating solution automatic conrol mechanism that measures a specific gravity and a sulfuric acid concentration of the copper plating solution, and supplies water in a case where the specific gravity is too high and supplies cupric oxide powder in a case where the sulfuric acid concentration is too high.
- the apparatus further includes a filter that removes impurities in the copper plating solution.
- the present invention can exhibit the remarkable effect of providing a copper plating method and apparatus for a gravure cylinder, in which copper plating with more uniform thickness can be provided over the full length of a gravure cylinder without causing defects such as rashes and pits irrespective of the size of the gravure cylinder, the concentration of a copper plating solution can be managed automatically, the consumption amount of additives can be reduced, a plating treatment can be performed within a short period of time, a power supply cost can be reduced, and handling is easy with excellent visibility.
- a copper plating apparatus for a gravure cylinder 4: a base, 6: a bearing, 8: a cover plate, 10:a plating bath, 11: a discharge duct, 12: a collecting bath, 14: a chuck means, 15: a liquid resistant adaptor, 16: a spindle, 18: a sprocket, 20: an anode chamber, 22: a lead bar, 23: an anode case, 24: an insoluble anode, 25: an attachment jig, 26: a cation exchange film, 27: an attachment jig, 28: a pressure flange, 30: a geared motor, 31: an attachment angle, 32, 33, 34, 35, 38: spur gears, 39, 40: fittings, 43, 44, 45, 46, 47, 48: sprockets, 50, 52: linear rails, 54, 55: guide members, 58, 59: attachment frames, 60, 62: racks, 70: a reservoir bath, 80
- FIG. 1 is an explanatory front view showing an exemplary main portion structure of a copper plating apparatus for a gravure cylinder according to the present invention.
- FIG. 2 is an explanatory plan view showing an exemplary main portion structure of the copper plating apparatus for a gravure cylinder according to the present invention.
- FIG. 3 is an explanatory side view showing the exemplary main portion structure of the copper plating apparatus for a gravure cylinder according to the present invention.
- FIG. 4 is a schematic explanatory view showing an example of an anode chamber in the present invention.
- FIG. 5 is a schematic explanatory view showing an exemplary basic structure of the copper plating apparatus for a gravure cylinder according to the present invention.
- FIG. 6 is a conceptual explanatory view showing an example of a copper plating solution automatic control mechanism in the present invention.
- FIG. 7 is a schematic explanatory view showing an example of an anode chamber liquid amount supply mechanism in the present invention.
- reference numeral 2 denotes the copper plating apparatus for a gravure cylinder of the present invention.
- the copper plating apparatus for a gravure cylinder 2 of the present invention provides the outer peripheral surface of a gravure cylinder R in a hollow cylindrical shape with copper plating, and includes a plating bath 10, chuck means 14, and a pair of anode chambers 20, 20 (see FIGS. 1 to 5 ).
- the plating bath 10 and the chuck means 14 have substantially the same structures as those of conventional apparatuses (see Patent Documents 1 to 3), so the repeated descriptions thereof will be omitted.
- the plating bath 10 is used for a plating treatment, which is filled with a copper plating solution F and is capable of soaking the gravure cylinder R in the copper plating solution F completely.
- a collecting bath (overflow box) 12 for collecting the overflowed copper plating solution F (see FIGS. 2 , 3 , and 5 ) is provided, and below the plating bath 10, a reservoir bath 70 for storing the copper plating solution F is provided so as to be communicated with the colleting bath 12 (see FIGS. 5 and 6 ).
- a heater 86 and a heat exchanger 88 for keeping the copper plating solution F at a predetermined liquid temperature (e.g., about 40°C) are provided, and a filter 80 for removing impurities in the copper plating solution F, a pump P1 for pumping up the copper plating solution F from the reservoir bath 70 so that the copper plating liquid F circulates to the plating bath 10, and the like are provided (see FIGS. 5 and 6 ).
- the chuck means 14 is a roll chuck apparatus (see Patent Documents 1 to 3) for holding both ends of the gravure cylinder R in a longitudinal direction and accommodating the gravure cylinder R in the plating bath 10, and includes a spindle 16 axially supported by a bearing 6 and a liquid resistant adaptor 15 for preventing the entry of the copper plating solution F.
- the chuck means 14 is rotated at a predetermined speed (e.g., about 120 rpm) via a chain C and a sprocket 18 by a cylinder rotation motor M provided on a base 4, and can be energized so that the gravure cylinder R becomes an cathode (see FIG. 5 ).
- a cover plate 8 that can be open or close above the plating bath 10, a discharge duct 11, and the like are provided appropriately (see FIGS. 1 and 5 ).
- the pair of anode chambers 20, 20 are provided upright so as to be slidable to both sides of the gravure cylinder in the plating bath 10 ( FIGS. 1 to 5 ).
- the anode chambers 20, 20 are members having a long box shape with a length equal to or larger than the full length of the gravure cylinder R in the longitudinal direction (see FIGS. 2 to 5 ), and as shown in FIG. 4 , an anode case 23 is filled with an acidic electrolyte solution S such as a sulfuric acid aqueous solution, and an insoluble anode 24 is placed with an attachment jig 25.
- the insoluble anode 24 is obtained by coating the surface of a titanium plate with iridium oxide or the like, and is energized via a lead bar 22 so as to function as an anode.
- a cation exchange film 26 is placed with an attachment jig 27 and a pressure flange 28.
- the mechanism that enables the pair of anode chambers 20, 20 to slide on both sides of the gravure cylinder R is not particularly limited. An example will be described with reference to FIGS. 1 to 3 .
- the base 4 is provided outside the front surface of the plating bath 10, and linear rails 50, 52 are provided on an inner wall surface of the base 4.
- Racks 60, 62 are provided so as to reciprocate due to the forward and reverse rotations of spur gears 35, 38 in parallel to the linear rails 50, 52, and are connected to guide members 54, 55 slidably engaged with the linear rails 50, 52 via the attachment frames 58, 59.
- the end portions of the lead bars 22, 22 of the anode chambers 20, 20 are connected respectively to upper ends of the attachment frames 58, 59 (see FIGS. 1 to 3 ).
- the gear 35 is fixed to the base 4 with a fitting 40 so as to rotate coaxially with a sprocket 45 on the outer wall surface side of the base 4.
- the spur gear 38 is fixed to the base 4 with a fitting 39 so as to rotate coaxially with a sprocket 48 on the outer wall surface side of the base 4.
- a sprocket 44 is provided so as to rotate coaxially with the spur gear 34, and right below the other sprocket 48, a sprocket 47 is provided so as to rotate coaxially with the sprocket 46.
- a geared motor 30 is set via an attachment angle 31, and a spur gear 32 is provided.
- the spur gear 33 is provided so as to rotate coaxially with a sprocket 43 in such a manner as to be engaged with the spur gear 32.
- a chain C1 is engaged between the sprockets 43, 46, a chain C2 is engaged between sprockets 44, 45, and a chain C3 is engaged between sprockets 47, 48.
- the spur gears 35, 38 rotate forwardly and reversely, and the racks 60, 62 reciprocate, and in synchronization therewith, the anode chambers 20, 20 are slidable exactly along the linear rails 50, 52 (see FIGS. 1 to 3 ).
- the interval at which the anode chamber 20 is brought close to the side surface of the gravure cylinder R is about 1 mm to 50 mm, preferably about 3 mm to 40 mm, and most preferably 5 mm to 30 mm. Considering the uniformity of a plating thickness, it is considered to be preferable that the anode chamber 20 is brought as close as to the side surface of the gravure cylinder R. However, when the anode chamber 20 is brought too close to the side surface of the gravure cylinder R, the anode chamber 20 and the gravure cylinder R may come into contact with each other during a copper plating treatment.
- the copper plating apparatus for a gravure cylinder 2 of the present invention further has a copper plating solution automatic control mechanism 100 and an anode chamber liquid amount supply mechanism 200 (see FIGS. 6 and 7 ).
- a reservoir bath 70 for storing the copper plating solution F is provided below the plating bath 10, and the copper plating solution F is pumped up with the pump P1 to be supplied to the plating bath 10, while the filter 80 is removing impurities.
- an automatic addition apparatus 90 provided with a pump P4 for supplying additives such as a brightener and a burn stopping agent is placed (see FIG. 6 ).
- the copper plating solution automatic control mechanism 100 adjusts the concentrations of copper and sulfuric acid in the copper plating solution F stored in the reservoir bath 70.
- the copper plating solution F contains, for example, copper sulfate (CuSO 4 • 5H 2 O) with a concentration of 200 to 250 g/L, sulfuric acid (H 2 SO 4 ) with a concentration of 50 to 70 g/L, chlorine (Cl) with a concentration of 50 to 200 ppm, and additives with a concentration of 1 to 10 mL/L such as a brightener and a burn stopping agent, as copper plating with respect to the gravure cylinder R proceeds, the concentration of copper ions in the copper plating solution F decreases, and free sulfuric acid increases.
- the copper plating solution automatic control mechanism 100 is introduced (see FIG. 6 ) for the purpose of adding cupric oxide (CuO) to effect a reaction: CuO + H 2 SO 4 ⁇ CuSO 4 + H 2 O to adjust the reduced concentration of copper ions.
- CuO cupric oxide
- the copper plating solution automatic control mechanism 100 samples the copper plating solution F in the reservoir bath 70 by a controller 110 provided with a specific gravity sensor 112 and a sulfuric acid sensor 114, performs required adjustment in a dissolution bath 102, and pumps up the adjusted copper plating solution F with the pump P3 from the dissolution bath 102 to supply it to the reservoir bath 70. That is, the copper plating solution F in the reservoir bath 70 is pumped up with the pump P2, and the specific gravity (concentration of copper) of the copper plating solution F and the concentration of sulfuric acid in the copper plating solution F are measured with the specific gravity sensor 112 and the sulfuric acid sensor 114 provided in the controller 110.
- the controller 110 controls an electromagnetic valve VE so as to supply water from a pure water pressure bath 108 to the dissolution bath 102.
- the controller 110 controls a powder supply apparatus 104 with a screw conveyer 105 so as to supply cupric oxide powder from a powder storing hopper 106 to the dissolution bath 102 (see FIG. 5 ).
- the water supply amount, when the electromagnetic valve VE is opened, can be adjusted by opening or closing an adjustment valve VT.
- the concentration adjustment of the copper plating solution F can be managed automatically, for example, the concentration of copper sulfate can be managed in a range of 200 to 250 g/L, and the concentration of sulfuric acid can be managed in a range of 50 to 70 g/L. While the case of using cupric oxide powder has been illustrated as a preferable example, powder of copper carbonate, copper sulfate, or the like may be used as powder to be supplied.
- the anode chamber liquid amount supply mechanism 200 measures the liquid amount of an acidic electrolyte solution S filling the inside of the anode chamber 20, and supplies water in a case of a shortage of a liquid amount.
- the anode case 23 of the anode chamber 20 is filled with the acidic electrolyte solution S composed of a sulfuric acid aqueous solution with a concentration of sulfuric acid of about 40 to 150 g/L (see FIGS. 4 and 7 ), and water is consumed by being electrolyzed with the insoluble anode 24 to generate oxygen, so water is supplied automatically.
- a pure water bath 210 is provided so as to be communicated with the anode case 23 of the anode chamber 20, and pure water W is stored in the pure water bath 210, whereby a liquid level of the pure water W is detected with a float 212.
- the electromagnetic valve VE is controlled to supply the pure water W from the pure water pressure bath 220 (see FIG. 7 ).
- the water supply amount when the electromagnetic valve VE is opened can be adjusted by opening or closing the adjustment valve VT. Owing to the anode chamber liquid amount supply mechanism 200 thus configured, a required liquid amount can be kept automatically for the acidic electrolyte solution S in the anode chamber 20.
- a copper sulfate plating solution As a copper plating solution, a copper sulfate plating solution was used, which had a copper sulfate concentration of 220 g/L, a sulfuric acid concentration of 60 g/L, a chlorine concentration of 120 ppm, and contained, as additives, 5 mL/L of "Cosmo RS-MU (produced and sold by Daiwa Special Chemical Co., Ltd.) and 2 mL/L of "Cosmo RS-1) (produced and sold by Daiwa Special Chemical Co., Ltd.).
- cupric oxide powder "Fusible copper oxide (ES-CuO)" (produced and sold by Tsurumi Soda Co., Ltd.) was used.
- an insoluble anode in the anode chamber an anode obtained by coating the surface of titanium plate with iridium oxide was used.
- an acidic electrolyte solution filling the anode chamber a sulfuric acid aqueous solution with a sulfuric acid concentration of 100 g/L was used.
- a cation exchange film "Selemion” (produced and sold by Asahi Glass Co., Ltd.) was used.
- a copper plating solution automatic control mechanism and an anode chamber liquid amount supply mechanism apparatuses with the above-mentioned mechanisms are configured.
- the specific gravity sensor in the copper plating solution automatic control mechanism "SG-1” (produced and sold by Japan Aqua Co., Ltd.) was used.
- the sulfuric acid concentration sensor “DM-1” (produced and sold by Japan Aqua Co., Ltd.) was used.
- a gravure cylinder As a gravure cylinder, a cylindrical base with an aluminum core having a circumference of a circle of 450 mm and a full length of 1100 mm was used. The gravure cylinder was placed in a plating bath under the condition that both ends of the gravure cylinder were chucked. Anode chambers were brought close to gravure cylinder side surfaces up to an interval of 20 mm with a slide mechanism controlled by a computer, and the copper plating solution was overflowed, whereby the gravure cylinder was soaked completely.
- the rotation speed of the gravure cylinder being set to be 120 ppm, copper plating was provided at a liquid temperature of 40°C, a current density of 18 A/dm 2 , and a voltage of 5.4 V until the thickness became 80 ⁇ m.
- the time required for a plating treatment was about 20 minutes. There were no rashes and pits on a plating surface, and plating with a uniform thickness was provided over the full length of the gravure cylinder.
- the copper plating solution automatic control mechanism was operated normally, and the composition of the copper plating solution was kept in an appropriate range.
- the anode chamber liquid amount supply mechanism was operated normally, and the liquid amount in the anode chamber was kept at an appropriately amount.
- the consumption amount of the additives was reduced (i.e., 60 cc/1000 AH).
- a gravure cylinder As a gravure cylinder, a cylindrical base with an aluminum core having a circumference of a circle of 600 mm and a full length of 1100 mm was used. The gravure cylinder was placed in a plating bath. Anode chambers were brought close to the gravure cylinder up to an interval of 20 mm with a slide mechanism controlled by a computer, and the plating solution was overflowed, whereby the gravure cylinder was soaked completely. With the rotation speed of the gravure cylinder being set to be 120 ppm, copper plating was provided at a liquid temperature of 40°C, a current density of 18 A/dm 2 , and a voltage of 6.0 V until the thickness became 80 ⁇ m. The time required for a plating treatment was about 20 minutes.
- the copper plating solution automatic control mechanism was operated normally, and the composition of the copper plating solution was kept in an appropriate range.
- the anode chamber liquid amount supply mechanism was operated normally, and the liquid amount in the anode chamber was kept at an appropriately amount.
- the consumption amount of the additives was reduced (i.e., 60 cc/1000 AH).
- a gravure cylinder As a gravure cylinder, a cylindrical base with an aluminum core having a circumference of a circle of 940 mm and a full length of 1100 mm was used. The gravure cylinder was placed in a plating bath under the condition that both ends of the gravure cylinder were chucked. Anode chambers were brought close to the gravure cylinder up to an interval of 20 mm with a slide mechanism controlled by a computer, and the plating solution was overflowed, whereby the gravure cylinder was soaked completely. With the rotation speed of the gravure cylinder being set to be 120 ppm, copper plating was provided at a liquid temperature of 40°C, a current density of 18 A/dm 2 , and a voltage of 7.7 V until the thickness became 80 ⁇ m.
- the time required for a plating treatment was about 20 minutes. There were no rashes and pits on a plating surface, and plating with a uniform thickness was provided over the full length of the gravure cylinder. Furthermore, the copper plating solution automatic control mechanism was operated normally, and the composition of the copper plating solution was kept in an appropriate range. The anode chamber liquid amount supply mechanism was operated normally, and the liquid amount in the anode chamber was kept at an appropriately amount. The consumption amount of the additives was reduced (i.e., 60 cc/1000 AH).
- a gravure cylinder As a gravure cylinder, a cylindrical base with an aluminum core having a circumference of a circle of 940 mm and a full length of 1100 mm was used. The gravure cylinder was placed in a plating bath under the condition that both ends of the gravure cylinder were chucked. Anode chambers were brought close to the gravure cylinder up to an interval of 5 mm with a slide mechanism controlled by a computer, and the plating solution was overflowed, whereby the gravure cylinder was soaked completely. With the rotation speed of the gravure cylinder being set to be 120 ppm, copper plating was provided at a liquid temperature of 40°C, a current density of 30 A/dm 2 , and a voltage of 7.9 V until the thickness became 80 ⁇ m.
- the time required for a plating treatment was about 12 minutes. There were no rashes and pits on a plating surface, and plating with a uniform thickness was provided over the full length of the gravure cylinder. Furthermore, the copper plating solution automatic control mechanism was operated normally, and the composition of the copper plating solution was kept in an appropriate range. The anode chamber liquid amount supply mechanism was operated normally, and the liquid amount in the anode chamber was kept at an appropriately amount. The consumption amount of the additives was reduced (i.e., 60 cc/1000 AH).
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- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005152187 | 2005-05-25 | ||
| PCT/JP2006/310209 WO2006126518A1 (fr) | 2005-05-25 | 2006-05-23 | Procede et dispositif de cuivrage de cylindre de gravure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1887108A1 true EP1887108A1 (fr) | 2008-02-13 |
Family
ID=37451943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP06756465A Withdrawn EP1887108A1 (fr) | 2005-05-25 | 2006-05-23 | Procede et dispositif de cuivrage de cylindre de gravure |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090095633A1 (fr) |
| EP (1) | EP1887108A1 (fr) |
| JP (1) | JPWO2006126518A1 (fr) |
| KR (1) | KR20070118694A (fr) |
| CN (1) | CN101184870A (fr) |
| WO (1) | WO2006126518A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009152915A3 (fr) * | 2008-05-28 | 2010-03-11 | Ipt - International Plating Technologies Gmbh | Procédé de galvanisation au cuivre et dispositif pour mettre en oeuvre ce procédé |
| US8867101B2 (en) | 2011-10-18 | 2014-10-21 | Think Laboratory Co., Ltd. | Photoengraving consumable material remote administration method |
| US9133561B2 (en) | 2010-09-30 | 2015-09-15 | Think Laboratory Co., Ltd. | Cylinder plating method and device |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4913925B2 (ja) * | 2010-03-25 | 2012-04-11 | 三菱レイヨン株式会社 | インプリント用ロール状モールドの製造方法 |
| CN101917089A (zh) * | 2010-07-09 | 2010-12-15 | 江苏佳成机械有限公司 | 镀铜车上工作轴的驱动装置 |
| CN102381070A (zh) * | 2010-08-30 | 2012-03-21 | 上海运青制版有限公司 | 一种镀铜的凹印辊基 |
| EP2623646A4 (fr) * | 2010-10-01 | 2015-09-23 | Think Labs Kk | Appareil de placage de cylindre |
| JP5876767B2 (ja) * | 2012-05-15 | 2016-03-02 | 株式会社荏原製作所 | めっき装置及びめっき液管理方法 |
| KR101648544B1 (ko) * | 2013-02-12 | 2016-08-17 | 가부시키가이샤 씽크. 라보라토리 | 연속 도금용 패터닝 롤 및 그 제조 방법 |
| JP6084112B2 (ja) * | 2013-05-09 | 2017-02-22 | 株式会社荏原製作所 | Sn合金めっき装置およびSn合金めっき方法 |
| JP6062600B2 (ja) * | 2014-03-31 | 2017-01-18 | 株式会社シンク・ラボラトリー | シリンダ用メッキ装置及び方法 |
| CN114622261B (zh) * | 2022-03-24 | 2023-06-09 | 桐城运城制版有限公司 | 一种凹印版辊的制作方法及设备 |
| CN116770406A (zh) * | 2023-06-26 | 2023-09-19 | 济钢防务技术有限公司 | 一种行波管钨螺旋线表面的镀铜装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6360295A (ja) * | 1986-08-29 | 1988-03-16 | Mitsubishi Metal Corp | 銀電解液の銀濃度制御装置 |
| JP3083968B2 (ja) * | 1995-01-12 | 2000-09-04 | 株式会社三井ハイテック | めっき液の濃度制御方法及び装置 |
| JP2000017495A (ja) * | 1998-06-30 | 2000-01-18 | Rix Corp | 電子部品のめっき装置 |
| JP3903120B2 (ja) * | 2003-03-07 | 2007-04-11 | 大阪府 | 硫酸銅めっき方法 |
| JP2005029876A (ja) * | 2003-07-11 | 2005-02-03 | Think Laboratory Co Ltd | 硫酸銅メッキ方法 |
-
2006
- 2006-05-23 KR KR1020077025754A patent/KR20070118694A/ko not_active Ceased
- 2006-05-23 CN CNA2006800183468A patent/CN101184870A/zh active Pending
- 2006-05-23 JP JP2007517828A patent/JPWO2006126518A1/ja active Pending
- 2006-05-23 EP EP06756465A patent/EP1887108A1/fr not_active Withdrawn
- 2006-05-23 WO PCT/JP2006/310209 patent/WO2006126518A1/fr not_active Ceased
- 2006-05-23 US US11/913,257 patent/US20090095633A1/en not_active Abandoned
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2006126518A1 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009152915A3 (fr) * | 2008-05-28 | 2010-03-11 | Ipt - International Plating Technologies Gmbh | Procédé de galvanisation au cuivre et dispositif pour mettre en oeuvre ce procédé |
| US9133561B2 (en) | 2010-09-30 | 2015-09-15 | Think Laboratory Co., Ltd. | Cylinder plating method and device |
| US8867101B2 (en) | 2011-10-18 | 2014-10-21 | Think Laboratory Co., Ltd. | Photoengraving consumable material remote administration method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101184870A (zh) | 2008-05-21 |
| WO2006126518A1 (fr) | 2006-11-30 |
| JPWO2006126518A1 (ja) | 2008-12-25 |
| KR20070118694A (ko) | 2007-12-17 |
| US20090095633A1 (en) | 2009-04-16 |
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