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EP1717857A3 - Dispositf semi-conducteur et méthode de fabrication associée - Google Patents

Dispositf semi-conducteur et méthode de fabrication associée Download PDF

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Publication number
EP1717857A3
EP1717857A3 EP06252231A EP06252231A EP1717857A3 EP 1717857 A3 EP1717857 A3 EP 1717857A3 EP 06252231 A EP06252231 A EP 06252231A EP 06252231 A EP06252231 A EP 06252231A EP 1717857 A3 EP1717857 A3 EP 1717857A3
Authority
EP
European Patent Office
Prior art keywords
manufacturing
conductive film
semiconductor apparatus
disposed
resin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP06252231A
Other languages
German (de)
English (en)
Other versions
EP1717857B1 (fr
EP1717857A2 (fr
Inventor
Tomoki Shinko Electric Industries Co Ltd Kobayashi
Toshiji Shinko Electric Industries Co Ltd Shimada
Akinobu Shinko Electric Industries Co. Ltd. Inoue
Atsunori Shinko Electric Industries Co Ltd Kajiki
Hiroyuki Shinko Electric Industries Co. Ltd. Kato
Hiroshi Shinko Electric Industries Co. Ltd Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Publication of EP1717857A2 publication Critical patent/EP1717857A2/fr
Publication of EP1717857A3 publication Critical patent/EP1717857A3/fr
Application granted granted Critical
Publication of EP1717857B1 publication Critical patent/EP1717857B1/fr
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structure Of Printed Boards (AREA)
EP06252231.3A 2005-04-28 2006-04-26 Dispositf semi-conducteur et méthode de fabrication associée Ceased EP1717857B1 (fr)

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JP2005132539A JP4589170B2 (ja) 2005-04-28 2005-04-28 半導体装置及びその製造方法

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EP (1) EP1717857B1 (fr)
JP (1) JP4589170B2 (fr)
KR (1) KR20060113412A (fr)
CN (1) CN1855451B (fr)
TW (1) TW200644297A (fr)

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US8434220B2 (en) * 2007-06-27 2013-05-07 Rf Micro Devices, Inc. Heat sink formed with conformal shield
JP4983219B2 (ja) * 2006-11-22 2012-07-25 株式会社村田製作所 部品内蔵基板
JP2009016371A (ja) * 2007-06-29 2009-01-22 Casio Comput Co Ltd シールド機能付きモジュールの製造方法
US7851894B1 (en) * 2008-12-23 2010-12-14 Amkor Technology, Inc. System and method for shielding of package on package (PoP) assemblies
WO2011034137A1 (fr) 2009-09-16 2011-03-24 株式会社村田製作所 Module ayant un composant électronique intégré
JP5882910B2 (ja) * 2010-01-19 2016-03-09 エルジー イノテック カンパニー リミテッド パッケージおよびその製造方法
WO2011102134A1 (fr) * 2010-02-18 2011-08-25 株式会社村田製作所 Substrat incorpore dans un composant
US9137934B2 (en) 2010-08-18 2015-09-15 Rf Micro Devices, Inc. Compartmentalized shielding of selected components
JP2012114173A (ja) * 2010-11-23 2012-06-14 Shinko Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
CN102479773A (zh) * 2010-11-26 2012-05-30 海华科技股份有限公司 具有电性屏蔽功能的模块集成电路封装结构及其制作方法
TW201225242A (en) * 2010-12-03 2012-06-16 Azurewave Technologies Inc Module IC package structure and method of making the same
CN102543904A (zh) * 2010-12-16 2012-07-04 海华科技股份有限公司 模块集成电路封装结构及其制作方法
US8835226B2 (en) 2011-02-25 2014-09-16 Rf Micro Devices, Inc. Connection using conductive vias
US9627230B2 (en) 2011-02-28 2017-04-18 Qorvo Us, Inc. Methods of forming a microshield on standard QFN package
JP6050975B2 (ja) * 2012-03-27 2016-12-21 新光電気工業株式会社 リードフレーム、半導体装置及びリードフレームの製造方法
JP5952074B2 (ja) 2012-04-27 2016-07-13 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
KR20140119522A (ko) * 2013-04-01 2014-10-10 삼성전자주식회사 패키지-온-패키지 구조를 갖는 반도체 패키지
US9807890B2 (en) 2013-05-31 2017-10-31 Qorvo Us, Inc. Electronic modules having grounded electromagnetic shields
CN107501870A (zh) * 2015-10-27 2017-12-22 张荣斌 防静电阻燃电路板用密封层材料
CN105873369B (zh) * 2016-05-19 2019-05-31 北京奇虎科技有限公司 一种印制电路板的制作方法和印制电路板
TWM551755U (zh) * 2017-06-20 2017-11-11 長華科技股份有限公司 泛用型導線架
JP6752768B2 (ja) * 2017-10-17 2020-09-09 矢崎総業株式会社 フィルムアンテナ
US11127689B2 (en) 2018-06-01 2021-09-21 Qorvo Us, Inc. Segmented shielding using wirebonds
US11219144B2 (en) 2018-06-28 2022-01-04 Qorvo Us, Inc. Electromagnetic shields for sub-modules
KR102145218B1 (ko) * 2018-08-07 2020-08-18 삼성전자주식회사 팬-아웃 반도체 패키지
US11114363B2 (en) 2018-12-20 2021-09-07 Qorvo Us, Inc. Electronic package arrangements and related methods
US11515282B2 (en) 2019-05-21 2022-11-29 Qorvo Us, Inc. Electromagnetic shields with bonding wires for sub-modules
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WO2001019607A1 (fr) * 1998-09-10 2001-03-22 Ga-Tek Inc. Couche favorisant l'adhesion utilisee avec des preimpregnes epoxy
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EP1717857B1 (fr) 2016-08-31
CN1855451A (zh) 2006-11-01
JP4589170B2 (ja) 2010-12-01
US20060244131A1 (en) 2006-11-02
CN1855451B (zh) 2010-06-23
KR20060113412A (ko) 2006-11-02
TW200644297A (en) 2006-12-16
US7514772B2 (en) 2009-04-07
JP2006310629A (ja) 2006-11-09
EP1717857A2 (fr) 2006-11-02

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