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EP0458119A1 - Procédé et appareil pour la séparation du cuivre, en particulier à partir de solutions de décapage de chlorure de cuivre - Google Patents

Procédé et appareil pour la séparation du cuivre, en particulier à partir de solutions de décapage de chlorure de cuivre Download PDF

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Publication number
EP0458119A1
EP0458119A1 EP91107354A EP91107354A EP0458119A1 EP 0458119 A1 EP0458119 A1 EP 0458119A1 EP 91107354 A EP91107354 A EP 91107354A EP 91107354 A EP91107354 A EP 91107354A EP 0458119 A1 EP0458119 A1 EP 0458119A1
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EP
European Patent Office
Prior art keywords
cation exchanger
cucl2
etching
solution
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP91107354A
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German (de)
English (en)
Inventor
Walter Gütling
Martin Heller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gutling GmbH
Original Assignee
Gutling GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gutling GmbH filed Critical Gutling GmbH
Publication of EP0458119A1 publication Critical patent/EP0458119A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions

Definitions

  • the invention relates to a method and an apparatus for the separation of copper, in particular from CuCl2 etching solutions, as used for example in the etching of copper boards.
  • Copper (II) chloride etching solutions are used, among other things, in the printing industry, in particular in the case of art prints, and predominantly in the semiconductor industry for the etching of copper-coated printed circuit boards.
  • the workpiece to be etched passes through the etching system in countercurrent to the etching solution, and the uncoated or exposed copper is etched off.
  • the copper content of the etching solution gradually increases and reaches a certain limit value, above which the performance of the etching solution decreases.
  • the etchant has its full performance with a copper content of 110 to 120 gCu / l. To maintain the performance of the etchant, either the copper content would have to be reduced again or the acid content would have to be increased gradually.
  • the invention is therefore based on the object of providing a method and a device of the type mentioned at the outset with which the disadvantages mentioned above are avoided.
  • This object is achieved by means of a method in that a cation exchanger is loaded with concentrated CuCl2 etching solution and the H+ ions are exchanged for Cu2+ ions, the cation exchanger is rinsed after the breakthrough and then loaded with H2SO4 for regeneration, whereby the Cu2+ ions are replaced by H+ ions again, that the cation exchanger is rinsed after the breakthrough, and that the CuSO4 solution obtained during the regeneration is introduced into an electrolysis bath and the Cu is electrolytically separated.
  • a copper (II) sulfate solution can be produced in a simple manner, from which the copper can be separated by means of electrolysis.
  • CuCl2 etching plants about 60% of the copper of the copper circuit boards is etched away, which corresponds to a copper volume of approx. 400 g / m2 circuit board. With an output of the etching system of approximately 20 to 25 m2 / h, this corresponds to a copper accumulation of 8 to 10 kg / h or, for a 14-hour day, a copper accumulation of 110 to 140 kgCu / day. With such a plant, large amounts of copper can thus be recovered, which is also not uninteresting from a financial point of view.
  • the caustic agent or caustic solution loaded with approximately 110 to 120 gCu / l is introduced into the cation exchanger.
  • the Cu2+ ions accumulate on the matrix of the exchange resin, which releases H+ ions.
  • These H+ ions react with the released chlorine to form hydrochloric acid, which is produced at the exit of the cation exchanger.
  • This hydrochloric acid will fed back into the etching system as a replenisher solution or refill solution.
  • the cation exchanger Before the cation exchanger is filled again with the CuCl2 etching solution after the breakthrough, ie after the exchange of all Cu2+ ions by H+ ions, ie after its regeneration, it is again rinsed in order to remove the remaining sulfuric acid from the cation exchanger.
  • This process has the essential advantage that no environmentally harmful or harmful substances such as chlorine gas and the like are produced, and that the copper is almost completely recovered.
  • a direct treatment of the CuCl2-etching solution with sulfuric acid is not possible because the acidity of the etching solution is too high with 78 g / l.
  • the hydrochloric acid formed when the ions are exchanged is advantageously returned to the etching system.
  • the wastewater has a lower degree of pollution, since the hydrochloric acid that is produced is reused.
  • a further development of the invention provides that the cation exchanger is rinsed with a weakly concentrated CuCl2 replenisher solution after loading with concentrated CuCl2 etching solution or is pre-washed.
  • This has the advantage that only a weakly concentrated CuCl2 solution has to be rinsed out of the cation exchanger during the subsequent main rinse, as a result of which the detergent is only slightly loaded.
  • the weakly concentrated CuCl2 replenisher solution squeezes out the highly concentrated CuCl2 etching solution that is still in the cation exchanger.
  • the cation exchanger is preferably rinsed with deionized water before loading with sulfuric acid.
  • This main rinse now completely removes the etching solution or replenisher solution from the cation exchanger, and all the chloride that has been released is removed. This has the advantage that the sulfuric acid subsequently introduced is not contaminated by chloride, which would pose problems in the later electrolysis.
  • the CuSO4 solution formed by the release of the Cu2+ ions is advantageously collected in a storage container for the electrolysis. This has the advantage that the electrolysis bath can be charged continuously with copper sulfate solution.
  • the cation exchanger is preferably rinsed with deionized water after the exchange of the Cu2+ ions by H+ ions. This ensures that the subsequent filling with CuCl2 etching solution does not contaminate it with sulfuric acid. In addition, the entire copper sulfate is rinsed out of the cation exchanger by the rinsing process.
  • the rinse water is advantageously pressed out of the cation exchanger with air before it is filled with new CuCl2 etching solution or with sulfuric acid. This has the advantage that neither the caustic solution nor the sulfuric acid are watered down by the rinse water.
  • the cation exchanger is advantageously rinsed free of demineralized water before loading with concentrated CuCl2 etching solution with weakly concentrated CuCl2 replenisher solution.
  • This has the advantage that the replenisher solution is diluted by the remaining rinsing water, but not the CuCl2 etching solution, which is then filled into the cation exchanger.
  • the cation exchanger is advantageously rinsed intensively in countercurrent after about half the rinsing time. This has the advantage that all of the chloride is removed by the intensive rinsing.
  • the rinsing water is preferably collected in a rinsing water container and then the copper in the rinsing water is separated out in a further, second cation exchanger.
  • the percentage of copper recovered is further increased, and the copper load in the rinsing water is reduced to such an extent that it can be discharged to the raw water basin of an existing circulation system. It can also be added to the sewage system via a neutralization system with NaOH as a harmless neutral salt solution.
  • the rinsing water can also be recovered for the rinsing zone of the etching system by adding an anion exchanger.
  • sulfuric acid is also used for regeneration in the further, second cation exchanger.
  • this has the advantage that this second cation exchanger can be easily integrated into the existing system.
  • Optimal etching in the etching system and optimum utilization of the copper recovery system is achieved by removing the CuCl2 etching solution with a copper concentration of 50 to 150, in particular from 110 to 120 gCu / l, and feeding it to the ion exchange process.
  • This has the advantage that the etching solution in the etching system still has its full etching power and does not have to be waited to exhaust the power of the etching solution until the etching power of the etching solution is almost completely exhausted.
  • a device which is characterized by a cation exchanger downstream of the CuCl2 etchant stream of the etching system, the input of which is connected to a storage container containing concentrated CuCl2 etching solution and a container containing sulfuric acid, and the outlet of which is connected to a weakly concentrated CuCl2 solution containing replenisher container and a copper sulfate solution-containing storage container is connected to which an electrolysis bath is connected.
  • Such a device has an area requirement of about 20 m2, which has the advantage that it can be retrofitted to existing etching systems with little effort, without these etching systems, regardless of their principle, design and mode of operation, simply on the replenisher inlet and on CuCl2 etching solution outlet can be connected.
  • This CuCl2 etching solution is passed into a storage container, from which it is the cation exchanger is fed.
  • the hydrochloric acid generated when the ions are exchanged is fed to the replenisher tank, from which the etching system is supplied.
  • the outlet of the cation exchanger is advantageously connected to the inlet of the replenisher container and / or to the etching system. This enables the return of the hydrochloric acid formed.
  • the inlet of the cation exchanger is advantageously connected to the outlet of a replenisher container containing a weakly concentrated CuCl2 replenisher solution. This creates the possibility that the cation exchanger is rinsed with replenisher solution prior to loading with concentrated CuCl2 etching solution, so that, as already described above, the cation exchanger is completely freed from rinsing water and watering down of the concentrated CuCl2 etching solution is prevented.
  • the inlet and / or the outlet of the cation exchanger are advantageously connected to a container containing rinsing water.
  • the cation exchanger can thus be rinsed with rinsing water both in normal flow and in countercurrent, whereby, for example, chloride which is formed during the ion exchange is completely removed, as well as CuCl2 solution and sulfuric acid solution still present after the breakthrough, as well as copper sulfate solution formed by ion exchange from the cation exchanger can be rinsed out at the appropriate time.
  • This has the advantage that the individual solutions are not mixed together and are thereby contaminated.
  • the recovery of the copper entrained in the rinse water is achieved in that a further cation exchanger is connected to the rinse water tank, which is connected to the CuSO4 storage tank and for regeneration to the tank containing sulfuric acid.
  • This second cation exchanger is used to treat the rinse water, which after passing through the cation exchanger can be easily disposed of as raw water.
  • 1 denotes an etching system and 2 an ion exchange system.
  • the etching system 1 has a loading station 3, via which the copper plates 4 to be etched are fed to the etching baths of the etching system 1.
  • a first etching station 5 Immediately following the loading station 3 is a first etching station 5, in which the boards 4 are sprayed with an etching solution 6 located in the first etching station 5 both from below and from above.
  • the etching solution 6 is removed from an etching bath 7 by means of a pump and fed to the circuit board 4 via spray nozzles.
  • etching station Following the first etching station there is a second etching station or a replenisher bath 8 in which the circuit boards 4 likewise have an etching solution from below and from above 9 are sprayed. With approximately 20 gCu / l, this etching solution 9 contains a lower copper content than the etching solution 6 with approximately 120 gCu / l. Finally, the boards 4, following the replenisher bath 8, pass through a rinsing station 10, in which the boards 4 are sprayed with rinsing water 11. The blanks 4 are dried in a drying device 12 and removed in an unloading station 13 in the etched and dried state of the etching system 1.
  • the etching solution used in the first etching station 5 and the replenisher bath 8 is copper (II) chloride etching solution (CuCl2) which flows through the replenisher bath 8 and the etching station 5 in countercurrent with respect to the transport direction of the circuit boards 4.
  • the etching system 1 has an inlet 14 and an outlet 15 and an overflow (not shown) between the replenisher bath 8 and the etching station 5.
  • a storage container 16 in which copper chloride solution from the first etching station 5 is collected.
  • This copper chloride solution is then removed from the etching bath 7 when a weight measuring device, not shown, determines that the copper content in the etching bath 7 is in the range of approximately 120 gCu / l.
  • the amount removed from the etching bath 7 is immediately replenished via the overflow (not shown) from the replenisher bath 8. Since the etching solution 9 from the replenisher bath 8 has a lower copper content, namely generally about 20-50 gCu / l, the copper content in the etching bath 7 decreases.
  • the removal from the etching bath 7 is stopped when the weight of the etching solution 6 falls below a predetermined value.
  • the inlet 14 is connected via a pump P to a replenisher container 17, from which the pump P targeted flow of CuCl2 solution with a copper content of about 20 gCu / l.
  • the etching solutions 6 and 9 in the etching station 5 and the replenisher bath 8 are constantly renewed, as a result of which a high, constant quality of the etching is achieved.
  • the two containers 16 and 17 are connected to a cation exchanger 21 via valves 18 and 19 and an inlet line 20 in which a pump P is arranged.
  • the feed line 20 opens via a further valve 22 into a feed line 23 of the cation exchanger 21.
  • a sulfuric acid container 26 is also connected to the feed line 23 via a valve 24 to which a line 25 is connected, and also via a valve 27 and one Line 28 connected through which demineralized water can be supplied from a system, not shown.
  • an air line 30 is connected via a valve 29.
  • the supply line 23 in turn opens via a valve 31 and a line 32 into a rinsing water tank 33.
  • the supply line 23 is connected to the rinsing water tank 33 via a valve 34 and a line 35.
  • the cation exchanger 21 has a discharge line 36, into which a branch of the fully desalinated water line 28 opens via a valve 37.
  • the line 36 is also connected to the rinsing water tank 33 via a valve 38 and a line 39.
  • a connection to the replenisher container 17 is established via a valve 40 and a line 41, whereas a valve 42 and a line 43 establish the connection of the derivation 36 to a CuSO4 storage container 44.
  • This storage container 44 is in turn connected via a pump P and a line 45 to the upper end of the sulfuric acid container 26.
  • the overflow 48 in turn opens into the storage container 44.
  • the drawing also shows a further, second cation exchanger 49, the inlet 50 of which is connected to the sulfuric acid container 26 via a valve 51 and a line 52. There is a connection to the fully desalinated water line 28 via a line 53 and a valve 54. Via a valve 55, the inlet 50 is finally connected to a raw water line 56 via which raw water exiting the cation exchanger 49 e.g. can run into a circulation system, not shown.
  • the cation exchanger 49 also has a discharge line 57, which is connected to the lower end of the rinse water container 33 via a valve 58 and a line 59, in which a pump P is provided.
  • Demineralized water can also be supplied to the discharge line 57 via a valve 60 via the line 53.
  • the discharge line 57 has a valve 61, which is likewise connected to the raw water line 56 via a branch.
  • the discharge line 57 is connected to the reservoir 44 for the electrolysis bath 47 via a valve 62 and a line 63.
  • the cation exchanger 21 of the ion exchange system 2 is initially filled with deionized water. This water is pressed out of the cation exchanger 21 by compressed air via the line 30 and the valve 29. The demineralized water flows through the valve 38 and the line 39 into the rinse water tank 33. During this process, the other valves are closed. After blowing out the water with compressed air, this is done in Cation exchanger 21 residual water still present with replenisher solution is pressed out of the replenisher container 17 via the valve 19, the line 20 and the pump P and the valve 22.
  • the cation exchanger 21 is now filled with the replenisher solution, it is filled with the CuCl 2 solution in the reservoir 13, which has a copper content of 120 gCu / l, via the valve 18, the line 20 and the valve 22 is pressed into the cation exchanger 21 via the pump P. In this process, the replenisher solution located in the exchanger 21 is pressed back into the replenisher container 17 via the valve 40 and the line 41. As soon as the amount of CuCl2 etching solution required for ion exchange has been removed from the reservoir 16, the valves 18 and 19 switch over so that the replenisher solution is now removed from the container 17 and passed through the cation exchanger 21.
  • demineralized water is replenished via the valve 27 and the line 28, and the valve 40 is then closed when the replenisher container 17 is filled. Simultaneously with the closing of the valve 40, the valve 38 is opened so that the rinsing water can flow off into the rinsing water tank 33 via the line 39. This rinsing process is carried out until all the chloride has been removed from the cation exchanger 21.
  • the cation exchanger 21 is compressed again with compressed air L via the line 30 and the valve 29, and freed from the rinsing water. Subsequently, the cation exchanger 21 via the valve 24 and the line 25 from the sulfuric acid container 26 in particular 10% sulfuric acid (H2SO4) is supplied.
  • the regeneration solution (CuSO4) or copper (II) sulfate solution now loaded with copper flows out of the cation exchanger 21 via the valve 42 and the line 43 and is accumulated in the storage container 44. This process is time-controlled and takes about 30 minutes. In this process, the Cu2+ ions contained in the cation exchanger 21 are replaced by H+ ions.
  • the exchanger 21 After the exchange process, i.e. after the breakthrough of the cation exchanger 21, the latter is in turn emptied with air so that the entire copper sulfate solution is removed from the exchanger 21.
  • the exchanger 21 is then rinsed again with demineralized water, which is collected in the rinsing water tank 39. In this position, filled with rinsing water, the cation exchanger 21 is again ready for the next ion exchange process. This next process begins when the level in the storage container 16 reaches a certain value. The entire ion exchange process can therefore be carried out under program control.
  • the copper carried over by rinsing with demineralized water or into the rinsing station 10 of the etching system 1 is separated off via a second cation exchanger 49.
  • This cation exchanger 49 is for this purpose via the valve 58 in the Countercurrent, ie from bottom to top, is fed via line 49 with rinsing water loaded with copper which, after the ion exchange process, is passed out of exchanger 49 via valve 55 and line 56 for disposal or reuse.
  • the exchanger 49 After the exchange of the exchanger 49, ie after the exchange of all H+ ions by Cu2+ ions, the latter is charged with sulfuric acid from the sulfuric acid container 26 via the valve 51 and the line 52 and regenerated in countercurrent, via the valve 62 and line 63, the copper sulfate formed by exchanging the Cu2+ ions for H+ ions is discharged into the storage container 44.
  • the purified water accumulating on line 56 can either be further processed as raw water in a circulation system, or can be added to the sewage system via a neutralization system with NaOH as a neutral salt solution. By adding an anion exchanger, the raw water can also be recovered as fresh rinsing water for the rinsing station 10.
  • the copper sulfate solution obtained in the reservoir 44 is now fed to the electrolysis bath 47 via the pump P and the line 46, where the copper is finally electrolytically deposited.
  • the depleted copper sulfate solution is removed from the electrolysis bath 47 via the overflow 48 and returned to the storage container 44.
  • the copper sulfate solution is depleted to a copper content of less than 100 mgCu / l.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrolytic Production Of Metals (AREA)
EP91107354A 1990-05-24 1991-05-07 Procédé et appareil pour la séparation du cuivre, en particulier à partir de solutions de décapage de chlorure de cuivre Withdrawn EP0458119A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4016732 1990-05-24
DE19904016732 DE4016732A1 (de) 1990-05-24 1990-05-24 Verfahren und vorrichtung zur abtrennung von kupfer, insbesondere aus cuc1(pfeil abwaerts)2(pfeil abwaerts)-aetzloesungen

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EP0458119A1 true EP0458119A1 (fr) 1991-11-27

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EP91107354A Withdrawn EP0458119A1 (fr) 1990-05-24 1991-05-07 Procédé et appareil pour la séparation du cuivre, en particulier à partir de solutions de décapage de chlorure de cuivre

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EP (1) EP0458119A1 (fr)
DE (1) DE4016732A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0600159A1 (fr) * 1992-11-26 1994-06-08 Gütling Gmbh Installation retardatrice à pompe à diaphragme pneumatique et compteur de levées
EP0601276A1 (fr) * 1992-12-05 1994-06-15 Gütling Gmbh Procédé pour la transformation de cuivre à partir d'eaux usées cuprifères dans une solution épuisée de gravure contenant du chlorure de cuivre provenant de la fabrication de circuits imprimés
DE10300597A1 (de) * 2003-01-10 2004-07-22 Eilenburger Elektrolyse- Und Umwelttechnik Gmbh Verfahren und Vorrichtung zur vollständigen Regenerierung von Metallchlorid-Ätzlösungen für Kupferwerkstoffe
EP1251920A4 (fr) * 2000-01-03 2006-05-17 Hydromatix Inc Procede et appareil d'elimination de metal par le biais d'un champ d'echange ionique de l'invention
CN110228814A (zh) * 2019-07-23 2019-09-13 深圳市海文环保技术有限公司 一种应用于硫酸铜制备过程中的除杂方法及除杂设备
EP3875643A3 (fr) * 2020-03-04 2021-12-08 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Procédé de traitement d'un support de déchets de gravure à partir de la fabrication d'une carte de circuit et/ou d'un substrat
CN114657566A (zh) * 2022-05-23 2022-06-24 江油星联电子科技有限公司 一种电路板生产用药水再生装置
WO2022184688A1 (fr) * 2021-03-02 2022-09-09 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Procédé de traitement d'un milieu de gravure usagé issu de la fabrication d'une carte de circuit imprimé et/ou d'un substrat
WO2025144976A1 (fr) * 2023-12-29 2025-07-03 GreenSource Fabrication LLC Extraction de cuivre sans solvant

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2241462A1 (de) * 1972-08-23 1974-03-07 Bach & Co Verfahren zum rueckgewinnen einer kupfer(ii)-chlorid enthaltenden aetzloesung
US4329210A (en) * 1980-03-28 1982-05-11 Robert W. Becker Method of regenerating etchant and recovering etched metal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2241462A1 (de) * 1972-08-23 1974-03-07 Bach & Co Verfahren zum rueckgewinnen einer kupfer(ii)-chlorid enthaltenden aetzloesung
US4329210A (en) * 1980-03-28 1982-05-11 Robert W. Becker Method of regenerating etchant and recovering etched metal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GALVANOTECHNIK, Band 78, Nr. 10, Oktober 1987, Seiten 2985-2989, Saulgau, DE; M. BRINGMANN: "Wirtschaftliche und umweltfreundliche Regeneration von gebr{uchlichen [tzmedien auf elektrolytischem Wege" *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0600159A1 (fr) * 1992-11-26 1994-06-08 Gütling Gmbh Installation retardatrice à pompe à diaphragme pneumatique et compteur de levées
US5382366A (en) * 1992-11-26 1995-01-17 Guetling Gmbh Retardation installation with compressed air-diaphragm pump and stroke count device
EP0601276A1 (fr) * 1992-12-05 1994-06-15 Gütling Gmbh Procédé pour la transformation de cuivre à partir d'eaux usées cuprifères dans une solution épuisée de gravure contenant du chlorure de cuivre provenant de la fabrication de circuits imprimés
EP1251920A4 (fr) * 2000-01-03 2006-05-17 Hydromatix Inc Procede et appareil d'elimination de metal par le biais d'un champ d'echange ionique de l'invention
DE10300597A1 (de) * 2003-01-10 2004-07-22 Eilenburger Elektrolyse- Und Umwelttechnik Gmbh Verfahren und Vorrichtung zur vollständigen Regenerierung von Metallchlorid-Ätzlösungen für Kupferwerkstoffe
CN110228814A (zh) * 2019-07-23 2019-09-13 深圳市海文环保技术有限公司 一种应用于硫酸铜制备过程中的除杂方法及除杂设备
CN110228814B (zh) * 2019-07-23 2021-08-17 深圳市海文环保技术有限公司 一种应用于硫酸铜制备过程中的除杂方法及除杂设备
EP3875643A3 (fr) * 2020-03-04 2021-12-08 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Procédé de traitement d'un support de déchets de gravure à partir de la fabrication d'une carte de circuit et/ou d'un substrat
WO2022184688A1 (fr) * 2021-03-02 2022-09-09 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Procédé de traitement d'un milieu de gravure usagé issu de la fabrication d'une carte de circuit imprimé et/ou d'un substrat
CN114657566A (zh) * 2022-05-23 2022-06-24 江油星联电子科技有限公司 一种电路板生产用药水再生装置
CN114657566B (zh) * 2022-05-23 2022-08-09 江油星联电子科技有限公司 一种电路板生产用药水再生装置
WO2025144976A1 (fr) * 2023-12-29 2025-07-03 GreenSource Fabrication LLC Extraction de cuivre sans solvant

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