DK3323152T3 - Nanowire-/nanopyramideformede lysdioder og fotodetektorer - Google Patents
Nanowire-/nanopyramideformede lysdioder og fotodetektorer Download PDFInfo
- Publication number
- DK3323152T3 DK3323152T3 DK16738444.5T DK16738444T DK3323152T3 DK 3323152 T3 DK3323152 T3 DK 3323152T3 DK 16738444 T DK16738444 T DK 16738444T DK 3323152 T3 DK3323152 T3 DK 3323152T3
- Authority
- DK
- Denmark
- Prior art keywords
- nanopyramide
- nanowire
- photo detectors
- shaped leds
- leds
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1437—Quantum wires or nanorods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
- H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1512231.0A GB201512231D0 (en) | 2015-07-13 | 2015-07-13 | Device |
| GBGB1600164.6A GB201600164D0 (en) | 2016-01-05 | 2016-01-05 | Device |
| PCT/EP2016/066694 WO2017009394A1 (en) | 2015-07-13 | 2016-07-13 | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK3323152T3 true DK3323152T3 (da) | 2021-12-20 |
Family
ID=56409619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK16738444.5T DK3323152T3 (da) | 2015-07-13 | 2016-07-13 | Nanowire-/nanopyramideformede lysdioder og fotodetektorer |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US11594657B2 (da) |
| EP (1) | EP3323152B1 (da) |
| JP (1) | JP7066610B2 (da) |
| KR (1) | KR20180055803A (da) |
| CN (1) | CN108292694A (da) |
| AU (1) | AU2016292849B2 (da) |
| BR (1) | BR112018000603A2 (da) |
| CA (1) | CA2992154A1 (da) |
| DK (1) | DK3323152T3 (da) |
| EA (1) | EA201890167A1 (da) |
| ES (1) | ES2901111T3 (da) |
| TW (1) | TWI772266B (da) |
| WO (1) | WO2017009394A1 (da) |
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| GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
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| JP7011278B2 (ja) * | 2017-01-27 | 2022-01-26 | 国立大学法人秋田大学 | 窒化物半導体の製造方法 |
| GB201701829D0 (en) | 2017-02-03 | 2017-03-22 | Norwegian Univ Of Science And Tech (Ntnu) | Device |
| FR3064109B1 (fr) * | 2017-03-20 | 2025-03-14 | Commissariat Energie Atomique | Structure a nanofils et procede de realisation d'une telle structure |
| GB201705755D0 (en) * | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
| TWI627317B (zh) * | 2017-04-12 | 2018-06-21 | 光鋐科技股份有限公司 | 柱狀微發光二極體及其製造方法 |
| JP6972665B2 (ja) * | 2017-05-31 | 2021-11-24 | セイコーエプソン株式会社 | 発光装置、プロジェクター、および発光装置の製造方法 |
| JP7147132B2 (ja) * | 2017-05-31 | 2022-10-05 | セイコーエプソン株式会社 | 発光装置、プロジェクター、および発光装置の製造方法 |
| JP6947386B2 (ja) * | 2017-06-29 | 2021-10-13 | 学校法人 名城大学 | 半導体発光素子および半導体発光素子の製造方法 |
| EP3431867A1 (en) | 2017-07-18 | 2019-01-23 | Koninklijke Philips N.V. | Light guides with coating for use in water |
| KR102345618B1 (ko) * | 2017-09-01 | 2021-12-31 | 삼성전자주식회사 | 발광 다이오드 및 그의 제조 방법 |
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| EP3546077A1 (en) | 2018-03-27 | 2019-10-02 | Koninklijke Philips N.V. | System for planar uv-c based biofouling prevention |
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| CN108807617A (zh) * | 2018-06-30 | 2018-11-13 | 华南理工大学 | 生长在硅/石墨烯复合衬底上的GaN基纳米柱LED外延片及其制备方法 |
| CN108807622B (zh) * | 2018-07-16 | 2020-10-30 | 河源市众拓光电科技有限公司 | 一维InGaN/AlGaN多量子阱型的紫外LED及其制备方法 |
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| CN109003888A (zh) * | 2018-07-20 | 2018-12-14 | 华南理工大学 | 硅/石墨烯复合衬底上外延生长GaN纳米柱及制备方法 |
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| CN110364582B (zh) * | 2019-06-20 | 2024-08-16 | 华南理工大学 | 一种基于石墨烯模板上AlGaN纳米柱基MSM型紫外探测器及其制备方法 |
| CN110246913B (zh) * | 2019-06-21 | 2024-09-20 | 华南理工大学 | 一种InGaN纳米柱阵列基GSG型可调谐光电探测器及其制备方法 |
| FR3098013B1 (fr) * | 2019-06-25 | 2021-07-02 | Commissariat Energie Atomique | Procédé de fabrication d'un dispositif optoélectronique à diodes électroluminescentes de type axial |
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| FR3098011B1 (fr) * | 2019-06-28 | 2022-07-15 | Aledia | Procede de fabrication de microfils ou nanofils |
| GB201910170D0 (en) * | 2019-07-16 | 2019-08-28 | Crayonano As | Nanowire device |
| CN110616408B (zh) * | 2019-09-18 | 2022-05-17 | 北京工业大学 | 基于二维材料的多层金属纳米结构的制备方法 |
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| JP7638489B2 (ja) * | 2021-02-01 | 2025-03-04 | 豊田合成株式会社 | 半導体素子および半導体素子の製造方法 |
| EP4338209A4 (en) * | 2021-05-14 | 2025-06-11 | The Regents of The University of Michigan | High efficiency ingan light emitting diodes |
| JP7758492B2 (ja) * | 2021-07-08 | 2025-10-22 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
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2016
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- 2016-07-13 DK DK16738444.5T patent/DK3323152T3/da active
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- 2016-07-13 EA EA201890167A patent/EA201890167A1/ru unknown
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| US20180204977A1 (en) | 2018-07-19 |
| EA201890167A1 (ru) | 2018-07-31 |
| JP2018521516A (ja) | 2018-08-02 |
| KR20180055803A (ko) | 2018-05-25 |
| AU2016292849B2 (en) | 2019-05-16 |
| EP3323152A1 (en) | 2018-05-23 |
| TW201712891A (zh) | 2017-04-01 |
| CN108292694A (zh) | 2018-07-17 |
| ES2901111T3 (es) | 2022-03-21 |
| JP7066610B2 (ja) | 2022-05-13 |
| TWI772266B (zh) | 2022-08-01 |
| EP3323152B1 (en) | 2021-10-27 |
| US11594657B2 (en) | 2023-02-28 |
| CA2992154A1 (en) | 2017-01-19 |
| AU2016292849A1 (en) | 2018-02-15 |
| WO2017009394A1 (en) | 2017-01-19 |
| BR112018000603A2 (pt) | 2018-09-11 |
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