DE3677165D1 - Integrierte halbleiterschaltungsanordnung. - Google Patents

Integrierte halbleiterschaltungsanordnung.

Info

Publication number: DE3677165D1
Authority: DE; Germany
Prior art keywords: circuit arrangement; semiconductor circuit; integrated semiconductor; integrated; arrangement
Prior art date: 1985-12-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8686309703T

Other languages

English (en)

Inventor

Masaya Iio

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-12-12

Filing date

1986-12-12

Publication date

1991-02-28

1986-12-12 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1991-02-28 Application granted granted Critical

1991-02-28 Publication of DE3677165D1 publication Critical patent/DE3677165D1/de

2006-12-13 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs

DE8686309703T 1985-12-12 1986-12-12 Integrierte halbleiterschaltungsanordnung. Expired - Lifetime DE3677165D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60280092A JPH0666402B2 (ja)	1985-12-12	1985-12-12	半導体集積回路装置の入力保護回路

Publications (1)

Publication Number	Publication Date
DE3677165D1 true DE3677165D1 (de)	1991-02-28

Family

ID=17620203

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8686309703T Expired - Lifetime DE3677165D1 (de)	1985-12-12	1986-12-12	Integrierte halbleiterschaltungsanordnung.

Country Status (5)

Country	Link
US (1)	US4712152A (de)
EP (1)	EP0226469B1 (de)
JP (1)	JPH0666402B2 (de)
KR (1)	KR900004298B1 (de)
DE (1)	DE3677165D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5021840A (en) *	1987-08-18	1991-06-04	Texas Instruments Incorporated	Schottky or PN diode with composite sidewall
FR2623018B1 (fr) *	1987-11-06	1990-02-09	Thomson Semiconducteurs	Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
USRE37477E1 (en) *	1987-11-06	2001-12-18	Sgs-Thomson Microelectronics, Inc.	Integrated circuit protected against electrostatic discharges, with variable protection threshold
JPH01267985A (ja) *	1988-04-20	1989-10-25	Fuji Photo Film Co Ltd	発熱抵抗体の駆動回路
US4875130A (en) *	1988-07-06	1989-10-17	National Semiconductor Corporation	ESD low resistance input structure
US5235489A (en) *	1991-06-28	1993-08-10	Sgs-Thomson Microelectronics, Inc.	Integrated solution to high voltage load dump conditions
US5591661A (en) *	1992-04-07	1997-01-07	Shiota; Philip	Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
US5272097A (en) *	1992-04-07	1993-12-21	Philip Shiota	Method for fabricating diodes for electrostatic discharge protection and voltage references
US5301081A (en) *	1992-07-16	1994-04-05	Pacific Monolithics	Input protection circuit
US5276582A (en) *	1992-08-12	1994-01-04	National Semiconductor Corporation	ESD protection using npn bipolar transistor
FR2729008B1 (fr) *	1994-12-30	1997-03-21	Sgs Thomson Microelectronics	Circuit integre de puissance
KR0182972B1 (ko) *	1996-07-18	1999-03-20	김광호	반도체 메모리 장치
US6388857B1 (en) *	1999-07-23	2002-05-14	Mitsubishi Denki Kabushiki Kaisha	Semiconductor circuit device with improved surge resistance
JP2001297989A (ja) *	2000-04-14	2001-10-26	Mitsubishi Electric Corp	半導体基板及びその製造方法並びに半導体装置及びその製造方法
USD560259S1 (en)	2004-09-15	2008-01-22	Svan Ab	Kick and balance trainer
JP5002899B2 (ja) *	2005-03-14	2012-08-15	富士電機株式会社	サージ電圧保護ダイオード
DE102005027368A1 (de) *	2005-06-14	2006-12-28	Atmel Germany Gmbh	Halbleiterschutzstruktur für eine elektrostatische Entladung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL176322C (nl) *	1976-02-24	1985-03-18	Philips Nv	Halfgeleiderinrichting met beveiligingsschakeling.
IT1094080B (it) *	1978-04-20	1985-07-26	Ates Componenti Elettron	Dispositivo a semiconduttore protetto contro le sovratensioni
US4405933A (en) *	1981-02-04	1983-09-20	Rca Corporation	Protective integrated circuit device utilizing back-to-back zener diodes
US4527213A (en) *	1981-11-27	1985-07-02	Tokyo Shibaura Denki Kabushiki Kaisha	Semiconductor integrated circuit device with circuits for protecting an input section against an external surge
JPS5895856A (ja) *	1981-12-02	1983-06-07	Matsushita Electronics Corp	半導体装置
JPS5992557A (ja) *	1982-11-18	1984-05-28	Nec Corp	入力保護回路付半導体集積回路
US4498227A (en) *	1983-07-05	1985-02-12	Fairchild Camera & Instrument Corporation	Wafer fabrication by implanting through protective layer
JPS60117653A (ja) *	1983-11-30	1985-06-25	Fujitsu Ltd	半導体集積回路装置
US5991854A (en) *	1996-07-01	1999-11-23	Sun Microsystems, Inc.	Circuit and method for address translation, using update and flush control circuits

1985
- 1985-12-12 JP JP60280092A patent/JPH0666402B2/ja not_active Expired - Lifetime
1986
- 1986-07-31 KR KR1019860006341A patent/KR900004298B1/ko not_active Expired
- 1986-12-12 US US06/941,048 patent/US4712152A/en not_active Expired - Fee Related
- 1986-12-12 EP EP86309703A patent/EP0226469B1/de not_active Expired - Lifetime
- 1986-12-12 DE DE8686309703T patent/DE3677165D1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
KR870006670A (ko)	1987-07-13
JPS62137861A (ja)	1987-06-20
EP0226469A1 (de)	1987-06-24
JPH0666402B2 (ja)	1994-08-24
EP0226469B1 (de)	1991-01-23
KR900004298B1 (ko)	1990-06-20
US4712152A (en)	1987-12-08

Publication	Publication Date	Title
DE3688088D1 (de)	1993-04-29	Integrierte halbleiterschaltung.
DE3853814D1 (de)	1995-06-22	Integrierte Halbleiterschaltung.
DE58906492D1 (de)	1994-02-03	Halbleiterschaltung.
DE3685071D1 (de)	1992-06-04	Integrierte halbleiterschaltung.
DE3684557D1 (de)	1992-04-30	Waferintegrierte halbleiteranordnung.
KR910016236A (ko)	1991-09-30	반도체 집적회로
DE3484313D1 (de)	1991-04-25	Integrierte halbleiterschaltung.
DE3683316D1 (de)	1992-02-20	Halbleiteranordnung.
DE3679108D1 (de)	1991-06-13	Halbleiteranordnungen.
DE68921088D1 (de)	1995-03-23	Integrierte Halbleiterschaltung.
DE3782775D1 (de)	1993-01-07	Integrierte halbleiterschaltung.
DE3685759D1 (de)	1992-07-30	Integrierte halbleiterschaltung.
DE3667879D1 (de)	1990-02-01	Halbleiteranordnung.
DE3680774D1 (de)	1991-09-12	Integriertes halbleiterbauelement.
DE3680265D1 (de)	1991-08-22	Halbleiterschaltungsanordnung.
DE3682421D1 (de)	1991-12-19	Feldeffekt-halbleiteranordnung.
DE3582804D1 (de)	1991-06-13	Lichtemittierende halbleiterschaltung.
DE3677165D1 (de)	1991-02-28	Integrierte halbleiterschaltungsanordnung.
DE3485592D1 (de)	1992-04-23	Integrierte halbleiterschaltungsanordnung.
DE3684364D1 (de)	1992-04-23	Integrierte halbleiterschaltung.
DE3884492D1 (de)	1993-11-04	Integrierte halbleiterschaltungsanordnung.
DE3889570D1 (de)	1994-06-23	Halbleiterschaltung.
DE3486077D1 (de)	1993-03-25	Integrierte halbleiterschaltungsanordnung.
DE3586810D1 (de)	1992-12-17	Halbleiterschaltung.
DE3481958D1 (de)	1990-05-17	Integrierte halbleiterschaltungsanordnung.

Legal Events

Date	Code	Title
1992-02-27	8364	No opposition during term of opposition
1996-02-01	8320	Willingness to grant licences declared (paragraph 23)
1997-12-11	8339	Ceased/non-payment of the annual fee