DE3035379A1 - METHOD FOR CLEANING A REACTOR - Google Patents
METHOD FOR CLEANING A REACTORInfo
- Publication number
- DE3035379A1 DE3035379A1 DE19803035379 DE3035379A DE3035379A1 DE 3035379 A1 DE3035379 A1 DE 3035379A1 DE 19803035379 DE19803035379 DE 19803035379 DE 3035379 A DE3035379 A DE 3035379A DE 3035379 A1 DE3035379 A1 DE 3035379A1
- Authority
- DE
- Germany
- Prior art keywords
- reactor
- cleaning
- hydrogen fluoride
- substrates
- gas phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000004140 cleaning Methods 0.000 title claims description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 11
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Cleaning In General (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Description
PHN 9578PHN 9578
"Verfahren zum Reinigen eines Reaktors""Process for cleaning a reactor"
Die Erfindung bezieht sich auf ein Verfahren zum Reinigen eines ReaKtors, nachdem darin aus einer Gasphase mindestens eine Schicht auf Substraten angebracht ist und die Substrate aus dem Reaktor entfernt sind.The invention relates to a method for cleaning a reactor after at least one gas phase therein a layer is applied to substrates and the substrates are removed from the reactor.
Verfahren zum Anbringen von Schichten werden allgemein z.B. in der Halbleitertechnologie, zum Erhalten z.B. isolierender, maskierender oder passivierender Schichten aus z.B. Siliciumnitrid oder Siliciumdioxid verwendet.Methods for applying layers are generally used, for example, in semiconductor technology, for obtaining e.g. insulating, masking or passivating layers made of e.g. silicon nitride or silicon dioxide are used.
Derartige Schichten Können in Metall oder QuarzreaKtoren aus einer Gasphase z.B. unter herabgesetztem Druck und gegebenenfalls unter Verwendung eines Gasplasmas abgelagert werden.Such layers can be in metal or quartz reactors deposited from a gas phase, e.g. under reduced pressure and possibly using a gas plasma will.
Es läßt sich dabei in der Praxis schwer vermeiden, daß das Material, aus dem die Schichten aufgebaut sind, sich auch auf der Reaktorwand ablagert und entweder beim Entfernen der Substrate aus dem Reaktor oder beim Einführen einer neuen Charge von Substraten in den Reaktor von der Reaktcrwand auf die Substrate fällt, was zu unreproduzierbaren und anderen unerwünschten Ergebnissen führt.In practice, it is difficult to avoid that the material from which the layers are built up also become deposited on the reactor wall and either when removing the substrates from the reactor or when introducing a new batch of substrates in the reactor from the reactor wall falls onto the substrates, resulting in unreproducible and other undesirable results.
Ein Verfahren zum Reinigen von Reaktoren besteht darin, daß der Reaktor mit einer Lösung gespült wird, die die Ablagerung entfernt. Eine derartige Behandlung beansprucht viel Zeit und erfordert meistens die Demontage des Reaktors. Auch wurde versucht, den Reaktor in einem Plasma mit Hilfe von Tetrafluormethan zu reinigen. Auch dieses Verfahren beansprucht viel Zeit und ergibt nicht immer einen reinenOne method of cleaning reactors is to flush the reactor with a solution containing the Deposit removed. Such treatment takes a lot of time and mostly requires the dismantling of the reactor. Attempts have also been made to clean the reactor in a plasma with the aid of tetrafluoromethane. This method is also claimed a lot of time and does not always result in a clean one
130015/0893130015/0893
X PHN 9578 X PHN 9578
•ic-• ic-
Reaktor.Reactor.
Die Erfindung hat unter anderem die Aufgabe, die genannten unerwünschten Ergebnisse und viel Zeit beanspruchende Reinigungsverfahren x^enigstens in erheblichem Maße zu vermeiden .The invention has, inter alia, the task mentioned to avoid undesirable results and time-consuming cleaning processes x ^ at least to a considerable extent .
Diese Aufgabe wird dadurch gelöst, daß di'e Reinigung mit einer trockenen Fluorwasserstoff enthaltenden Gasphase durchgeführt wird.This object is achieved by cleaning with a dry gas phase containing hydrogen fluoride is carried out.
Der Erfindung liegt unter anderem die Erkenntnis zugrunde, daß unter gewissen Bedingungen die Reinigung von Reaktoren aus einer Gasphase doch besonders günstige Resultate ergeben kann.The invention is based, inter alia, on the knowledge that under certain conditions the cleaning of reactors can give particularly favorable results from a gas phase.
Es stellt sich heraus, daß mit Hilfe des Verfahrens nach der Erfindung Reaktoren schnell und vollständig gereinigt werden können. Weitere Vorteile trockenen Fluorwasserstoffs sind, daß er nicht korrosiv ist und flüchtige Reaktionsprodukte liefert.It turns out that with the aid of the method according to the invention reactors are cleaned quickly and completely can be. Other advantages of dry hydrogen fluoride are that it is non-corrosive and volatile reaction products supplies.
Es ist für das Verfahren nach der Erfindung unbedenklich, wenn das bei der Reinigung zu entfernende Material vorher beim Vorhandensein eines Plasmas abgelagert ist.It is harmless for the method according to the invention, if the material to be removed during cleaning is previously deposited in the presence of a plasma.
Vorzugsweise wird vor der Reinigung der Druck im Reaktor herabgesetzt, und es wird dann der trockene Fluorwasserstoff in den Reaktor gebracht. Diese Ausführungsform des Verfahrens nach der Erfindung hat sich in der Praxis als besonders günstig erwiesen. ·Before cleaning, the pressure in the reactor is preferably reduced and the dry hydrogen fluoride is then used brought into the reactor. This embodiment of the method according to the invention has proven particularly advantageous in practice. ·
In Abhängigkeit von z.B. der Dicke der auf der Reaktorwand abgelagerten Schicht werden die Herabsetzung des Druckes und das Zuführen trockenen Fluorwasserstoffs wiederhit, bis die Reaktorwand rein ist.Depending on, for example, the thickness of the layer deposited on the reactor wall, the reduction in pressure and repeating the supply of dry hydrogen fluoride until the reactor wall is clean.
130015/0893130015/0893
303S37S303S37S
y PHN 9578 y PHN 9578
·5·· 5 ·
Vorzugsweise wird zugleich mit der Durchführung des Reinigungsvorgangs der Druck im Reaktor gemessen. Durch das Konstantwerden des Druckes im Verlaufe des Reinigungsvorgangs macht sich bemerkbar, daß entweder die Gasphase in bezug auf trockenen Fluorwasserstoff erschöpft ist oder der Reinigungsvorgang beendet ist.The pressure in the reactor is preferably measured at the same time as the cleaning process is carried out. By the pressure becoming constant in the course of the cleaning process is noticeable that either the gas phase is exhausted with respect to dry hydrogen fluoride or the cleaning process is finished.
Besonders günstige Ergebnisse werden erzielt, wenn Siliciumnitrid- oder Siliciumdioxid-haltige Schichten, z.B. in einem Plasma abgelagert, entfernt werden müssen. Dabei beträgt die Temperatur der Wand des Reaktors mindestens 16O°C.Particularly favorable results are achieved when layers containing silicon nitride or silicon dioxide, e.g. deposited in a plasma must be removed. The temperature of the wall of the reactor is at least 160 ° C.
Die Erfindung wird nachstehend anhand eines Beispiels näher erläutert.The invention is explained in more detail below using an example.
Ein runder flacher Reaktor aus Aluminium oder rostfreiem Stahl mit einem Durchmesser von etwa 0,75 m und einer Höhe von etwa 0,10 m wird 2um Anbringen einer z.B. aus Siliciumnitrid bestehenden Schicht mit Hilfe eines Plasmas aus einer Gasphase auf einer Anzahl von Substraten für die Herstellung von Halbleiteranordnungeh verwendetA round, flat reactor made of aluminum or stainless steel with a diameter of about 0.75 m and a height of about 0.10 m is used to attach a silicon nitride, for example existing layer by means of a plasma from a gas phase on a number of substrates for manufacture used by semiconductor devices
Die betreffende Gasphase wird durch den Reaktor über nebeneinander liegende Substrate geführt. Beim Anbringen auf übliche Weise einer 1 /um dicken Siliciumnitridschicht aus z.B. Silan und Ammoniak bei 3000C auf den Substraten wird zugleich eine 1 /um dicke Siliciumnitridschicht auf der Wand des Reaktors abgelagert.The gas phase in question is passed through the reactor over substrates lying next to one another. When a 1 / μm thick silicon nitride layer of, for example, silane and ammonia is applied to the substrates in the usual way at 300 ° C., a 1 / μm thick silicon nitride layer is simultaneously deposited on the wall of the reactor.
Nach der Erfindung wird nach Entfernung der Substrate aus dem Reaktor die Schicht von der Reaktorwand mit Hilfe einer trockenen Fluorwasserstoff enthaltenden Gasphase entfernt. According to the invention, after removal of the substrates the reactor with the help of the layer from the reactor wall removed from a dry gas phase containing hydrogen fluoride.
130015/0893130015/0893
3AD ORiGIiMAL3AD ORiGIiMAL
Jf PHN 9578 Jf PHN 9578
• 6.• 6.
Dazu wird der Druck im Reaktor vor der Reinigung auf
etwa 1500 Pa herabgesetzt, und es wird dann trockener Fluorwasserstoff dem Reaktor zugegeben, bis etwa ein
Druck von 2500 Pa erreicht ist.
5For this purpose, the pressure in the reactor is reduced to about 1500 Pa before cleaning, and dry hydrogen fluoride is then added to the reactor until a pressure of about 2500 Pa is reached.
5
Bei einer Reaktorwandtemperatur von 200 bis 3000C, die mit Hilfe eines in den Reaktor eingebauten Widerstandsofens erhalten ist, wird in etwa 3 Minuten eine reine Reaktorwand erhalten.At a reactor wall temperature of 200 to 300 ° C., which is obtained with the aid of a resistance furnace built into the reactor, a clean reactor wall is obtained in about 3 minutes.
Nach Beendigung des Ätzvorgangs wird der Druck gemessen; dieser Druck wird konstant bei etwa 1500 Pa.After the end of the etching process, the pressure is measured; this pressure becomes constant at around 1500 Pa.
In diesem Falle braucht dem Reaktor nur einmal trockener Fluowasserstoff zugegeben zu werden.In this case, dry hydrogen fluoride only needs to be added once to the reactor.
Bei nicht aus Siliciumnitrid bestehenden Schichten, z.B. Schichten, die Siliciumdioxid oder mehrere Stoffe enthalten, werden entsprechende Ergebnisse erzielt.In the case of layers not consisting of silicon nitride, e.g. Similar results are obtained for layers containing silicon dioxide or several substances.
Die Erfindung ist nicht auf das gegebene Beispiel beschränkt. Im Rahmen der Erfindung sind für den Fachmann viele Abwandlungen möglich.The invention is not restricted to the example given. Within the scope of the invention are for those skilled in the art many variations possible.
So kann z.B. statt eines Metallreaktors ein Quarzreaktor verwendet werden.For example, a quartz reactor can be used instead of a metal reactor.
Außer Halbleiteranordnungen können andere Anordnungen wie integrierte Magnetköpfe zum Einschreiben und Auslesen von Information hergestellt werden.In addition to semiconductor arrangements, other arrangements such as integrated magnetic heads for writing and reading from Information to be produced.
130015/0893130015/0893
Claims (7)
dadurch gekennzeichnet, daß die Reinigung mit einer trockenen Fluorwasserstoff enthaltenden Gasphase durchgeführt wird.Method for cleaning a realtor after at least one layer has been applied to substrates from a gas phase therein and the substrates have been removed from the reactor,
characterized in that the cleaning is carried out with a dry gas phase containing hydrogen fluoride.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7906996A NL7906996A (en) | 1979-09-20 | 1979-09-20 | METHOD FOR CLEANING A REAKTOR. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3035379A1 true DE3035379A1 (en) | 1981-04-09 |
Family
ID=19833876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803035379 Withdrawn DE3035379A1 (en) | 1979-09-20 | 1980-09-19 | METHOD FOR CLEANING A REACTOR |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5653740A (en) |
| AU (1) | AU6247480A (en) |
| CA (1) | CA1143259A (en) |
| DE (1) | DE3035379A1 (en) |
| FR (1) | FR2465791A1 (en) |
| GB (1) | GB2062689B (en) |
| NL (1) | NL7906996A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3625597A1 (en) * | 1985-11-22 | 1987-05-27 | Advanced Semiconductor Mat | ETCHING AGENT FOR REMOVING SEPARATE MATERIALS FROM DEVICES AND ACCESSORIES FOR CHEMICAL VAPOR SEPARATION AND CLEANING METHOD FOR THESE OBJECTS |
| EP0387656A1 (en) * | 1989-03-14 | 1990-09-19 | Fujitsu Limited | Chemical vapor deposition method |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4512812A (en) * | 1983-09-22 | 1985-04-23 | Varian Associates, Inc. | Method for reducing phosphorous contamination in a vacuum processing chamber |
| US4597989A (en) * | 1984-07-30 | 1986-07-01 | Burroughs Corporation | Method of depositing silicon films with reduced structural defects |
| US4657616A (en) * | 1985-05-17 | 1987-04-14 | Benzing Technologies, Inc. | In-situ CVD chamber cleaner |
| US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
| US5755886A (en) * | 1986-12-19 | 1998-05-26 | Applied Materials, Inc. | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing |
| US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
| EP1083592A1 (en) * | 1999-09-10 | 2001-03-14 | Interuniversitair Microelektronica Centrum Vzw | Etching of silicon nitride by anhydrous halogen gas |
| EP1083593A1 (en) * | 1999-09-10 | 2001-03-14 | Interuniversitair Micro-Elektronica Centrum Vzw | Etching of silicon nitride by anhydrous halogen gas |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3669774A (en) * | 1969-11-20 | 1972-06-13 | Rca Corp | Low temperature silicon etch |
| US4127437A (en) * | 1976-05-14 | 1978-11-28 | Dionex Corporation | Process for etching SiO2 utilizing HF vapor and an organic catalyst |
| US4138306A (en) * | 1976-08-31 | 1979-02-06 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for the treatment of semiconductors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1202616B (en) * | 1962-02-23 | 1965-10-07 | Siemens Ag | Process for removing the semiconductor layer deposited on the heater during epitaxy |
| DE1240818B (en) * | 1963-03-23 | 1967-05-24 | Siemens Ag | Process for producing high-purity semiconductor material by deposition from the gas phase |
| CH433206A (en) * | 1963-12-14 | 1967-04-15 | Siemens Ag | Process for cleaning holders made of carbon, which are used for fastening carrier rods made of semiconductor material |
| DE1619997A1 (en) * | 1967-03-29 | 1970-03-26 | Siemens Ag | Process for the serial production of epitaxial layers from the gas phase |
-
1979
- 1979-09-20 NL NL7906996A patent/NL7906996A/en not_active Application Discontinuation
-
1980
- 1980-09-11 CA CA000360274A patent/CA1143259A/en not_active Expired
- 1980-09-15 FR FR8019848A patent/FR2465791A1/en active Granted
- 1980-09-17 AU AU62474/80A patent/AU6247480A/en not_active Abandoned
- 1980-09-17 GB GB8030099A patent/GB2062689B/en not_active Expired
- 1980-09-18 JP JP12866580A patent/JPS5653740A/en active Pending
- 1980-09-19 DE DE19803035379 patent/DE3035379A1/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3669774A (en) * | 1969-11-20 | 1972-06-13 | Rca Corp | Low temperature silicon etch |
| US4127437A (en) * | 1976-05-14 | 1978-11-28 | Dionex Corporation | Process for etching SiO2 utilizing HF vapor and an organic catalyst |
| US4138306A (en) * | 1976-08-31 | 1979-02-06 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for the treatment of semiconductors |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3625597A1 (en) * | 1985-11-22 | 1987-05-27 | Advanced Semiconductor Mat | ETCHING AGENT FOR REMOVING SEPARATE MATERIALS FROM DEVICES AND ACCESSORIES FOR CHEMICAL VAPOR SEPARATION AND CLEANING METHOD FOR THESE OBJECTS |
| EP0387656A1 (en) * | 1989-03-14 | 1990-09-19 | Fujitsu Limited | Chemical vapor deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5653740A (en) | 1981-05-13 |
| AU6247480A (en) | 1981-04-09 |
| CA1143259A (en) | 1983-03-22 |
| NL7906996A (en) | 1981-03-24 |
| GB2062689B (en) | 1984-02-22 |
| FR2465791A1 (en) | 1981-03-27 |
| GB2062689A (en) | 1981-05-28 |
| FR2465791B1 (en) | 1984-07-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8139 | Disposal/non-payment of the annual fee |