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CO2018006864A2 - Fotoelectrodos iluminados por la interfaz sustrato-electrodo (se) y celdas fotoelectroquímicas - Google Patents

Fotoelectrodos iluminados por la interfaz sustrato-electrodo (se) y celdas fotoelectroquímicas

Info

Publication number
CO2018006864A2
CO2018006864A2 CONC2018/0006864A CO2018006864A CO2018006864A2 CO 2018006864 A2 CO2018006864 A2 CO 2018006864A2 CO 2018006864 A CO2018006864 A CO 2018006864A CO 2018006864 A2 CO2018006864 A2 CO 2018006864A2
Authority
CO
Colombia
Prior art keywords
contacts
collector
passivation layer
photoelectrode
openings
Prior art date
Application number
CONC2018/0006864A
Other languages
English (en)
Inventor
Pérez Germán Penelas
Alonso María Dolores Hernández
Arbella Teresa Andreu
Lleonart Juan Ramón Morante
Figueras Carles Ros
González Nina Magali Carretero
Martin Eric Calle
Villasclaras Pablo Ortega
Gonzalez Ramon Alcubilla
Original Assignee
Repsol Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Repsol Sa filed Critical Repsol Sa
Publication of CO2018006864A2 publication Critical patent/CO2018006864A2/es

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/50—Processes
    • C25B1/55—Photoelectrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2022—Light-sensitive devices characterized by he counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/055—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/17—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof
    • C25B9/19—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/70—Assemblies comprising two or more cells
    • C25B9/73—Assemblies comprising two or more cells of the filter-press type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/133—Renewable energy sources, e.g. sunlight
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

RESUMEN Se divulga un fotoelectrodo para una celda fotoelectroquímica. El fotoelectrodo comprende una celda solar de contacto trasero que comprende contactos emisores y colectores, estando separados por primeras aberturas. Los contactos emisores y colectores se recogen, respectivamente, en una barra colectora de emisores y una barra colectora de colectores. El fotoelectrodo comprende, además, una capa de pasivación de contactos para separar los contactos emisores y colectores del electrolito durante el uso. La capa de pasivación de contactos comprende, además, segundas aberturas en correspondencia con las primeras aberturas. El fotoelectrodo comprende, además, una capa de resina que cubre las aberturas y una porción de la capa de pasivación de contactos tal que, durante el uso, solamente portadores de carga de los contactos emisores atraviesan la capa de pasivación de contactos en su camino hacia el electrolito, mientras que los portadores de carga de los contactos colectores se recogen en la barra colectora de colectores. Una capa de electrocatalizador está provista, además, cubriendo, respectivamente, la capa de resina y/o la capa de pasivación de contactos. [figura 1]
CONC2018/0006864A 2015-12-23 2016-12-22 Fotoelectrodos iluminados por la interfaz sustrato-electrodo (se) y celdas fotoelectroquímicas CO2018006864A2 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15382658.1A EP3184670B1 (en) 2015-12-23 2015-12-23 Substrate-electrode (se) interface illuminated photoelectrodes and photoelectrochemical cells
PCT/EP2016/082442 WO2017109108A1 (en) 2015-12-23 2016-12-22 Substrate-electrode (se) interface illuminated photoelectrodes and photoelectrochemical cells

Publications (1)

Publication Number Publication Date
CO2018006864A2 true CO2018006864A2 (es) 2018-09-20

Family

ID=55068945

Family Applications (1)

Application Number Title Priority Date Filing Date
CONC2018/0006864A CO2018006864A2 (es) 2015-12-23 2016-12-22 Fotoelectrodos iluminados por la interfaz sustrato-electrodo (se) y celdas fotoelectroquímicas

Country Status (18)

Country Link
US (1) US10903018B2 (es)
EP (1) EP3184670B1 (es)
JP (1) JP6940237B2 (es)
KR (1) KR102692683B1 (es)
CN (1) CN108541275B (es)
AU (1) AU2016374872B2 (es)
CA (1) CA3008968C (es)
CL (1) CL2018001649A1 (es)
CO (1) CO2018006864A2 (es)
DK (1) DK3184670T3 (es)
ES (1) ES2733443T3 (es)
IL (1) IL260205B (es)
MX (1) MX381468B (es)
MY (1) MY188780A (es)
PE (1) PE20181188A1 (es)
PT (1) PT3184670T (es)
SA (1) SA518391866B1 (es)
WO (1) WO2017109108A1 (es)

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US20210017653A1 (en) * 2018-04-13 2021-01-21 King Abdullah University Of Science And Technology Photoelectrochemical (pec) cell
US11316169B2 (en) * 2018-06-12 2022-04-26 West Virginia University Methods for forming electrocatalyst structures and electrodes comprising same
JP7264674B2 (ja) * 2019-03-13 2023-04-25 東洋アルミニウム株式会社 バックコンタクト型太陽電池セルの製造方法
CN110783157B (zh) * 2019-10-24 2021-11-05 北方夜视技术股份有限公司 一种应用于多碱光电阴极的复合光学薄膜及其制备方法
KR102376732B1 (ko) * 2020-06-23 2022-03-18 한양대학교 에리카산학협력단 광양극 구조체, 그 제조 방법, 및 이를 포함하는 하이브리드 발전 소자
CN114318359B (zh) * 2021-11-15 2024-05-14 无锡隆基氢能科技有限公司 光电极、光电解水装置和使用其的能量系统以及光电解水的方法

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JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
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Also Published As

Publication number Publication date
DK3184670T3 (da) 2019-07-22
EP3184670A1 (en) 2017-06-28
PT3184670T (pt) 2019-07-17
CN108541275A (zh) 2018-09-14
MX2018007469A (es) 2018-11-29
US10903018B2 (en) 2021-01-26
JP6940237B2 (ja) 2021-09-22
KR20180100323A (ko) 2018-09-10
AU2016374872B2 (en) 2021-10-28
CA3008968A1 (en) 2017-06-29
KR102692683B1 (ko) 2024-08-19
CL2018001649A1 (es) 2018-08-24
CA3008968C (en) 2023-12-12
PE20181188A1 (es) 2018-07-20
CN108541275B (zh) 2021-01-12
ES2733443T3 (es) 2019-11-29
MY188780A (en) 2021-12-30
US20190013156A1 (en) 2019-01-10
SA518391866B1 (ar) 2021-10-21
IL260205B (en) 2021-10-31
IL260205A (en) 2018-07-31
MX381468B (es) 2025-03-12
WO2017109108A1 (en) 2017-06-29
JP2019507240A (ja) 2019-03-14
EP3184670B1 (en) 2019-04-17
AU2016374872A1 (en) 2018-07-19

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