CN1818130A - Production of dual electromagnetic shielding screen by sputtering method - Google Patents
Production of dual electromagnetic shielding screen by sputtering method Download PDFInfo
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- CN1818130A CN1818130A CN 200610049912 CN200610049912A CN1818130A CN 1818130 A CN1818130 A CN 1818130A CN 200610049912 CN200610049912 CN 200610049912 CN 200610049912 A CN200610049912 A CN 200610049912A CN 1818130 A CN1818130 A CN 1818130A
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- frosting
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 230000009977 dual effect Effects 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000011651 chromium Substances 0.000 claims abstract description 19
- 229910001566 austenite Inorganic materials 0.000 claims abstract description 18
- 238000007747 plating Methods 0.000 claims abstract description 17
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 15
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 10
- 229910018487 Ni—Cr Inorganic materials 0.000 claims abstract description 9
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000005291 magnetic effect Effects 0.000 claims abstract description 9
- 239000010935 stainless steel Substances 0.000 claims abstract description 8
- 238000005477 sputtering target Methods 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 229910001039 duplex stainless steel Inorganic materials 0.000 claims abstract description 5
- 229920003023 plastic Polymers 0.000 claims description 19
- 239000004033 plastic Substances 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000035699 permeability Effects 0.000 claims description 5
- 229920006491 ABS+PC Polymers 0.000 claims description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- 239000011104 metalized film Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 230000005294 ferromagnetic effect Effects 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- DPDMMXDBJGCCQC-UHFFFAOYSA-N [Na].[Cl] Chemical compound [Na].[Cl] DPDMMXDBJGCCQC-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000002907 paramagnetic material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 230000005477 standard model Effects 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
本发明属于新型抗电磁干扰(EMI)屏蔽技术领域，特别是涉及一种电磁双重屏蔽膜的溅射制备方法，其制备工艺是选择特定成分奥氏体组织的镍铬类不锈钢靶材一对塑料表面清洗和活化一金属化溅射镀；所述金属化溅射镀采用的溅射靶为奥氏体的镍铬类双相不锈钢靶材；其直径为60毫米，铬和镍当量为(18，7)，其标准金相组织是临近铁素体区的奥氏体；鉴于奥氏体是顺磁体，它具有较高的溅射成膜速率，通过溅射可以快速获得铁磁性的铁素体不锈钢薄膜，该薄膜具有磁屏蔽和电屏蔽效果，并且具有不锈钢材料良好的耐候性；本发明具有工艺设计合理、溅射成膜速度快、生产成本低廉等优点，它是一种较理想的电磁双重屏蔽膜的溅射制备方法。The invention belongs to the field of novel anti-electromagnetic interference (EMI) shielding technology, and in particular relates to a sputtering preparation method of an electromagnetic double shielding film. Surface cleaning and activation-metallized sputtering plating; the sputtering target used in the metallizing sputtering plating is an austenitic nickel-chromium duplex stainless steel target; its diameter is 60 mm, and the chromium and nickel equivalents are (18 , 7), its standard metallographic structure is austenite adjacent to the ferrite region; in view of the fact that austenite is a paramagnet, it has a high sputtering film formation rate, and ferromagnetic ferrite can be quickly obtained by sputtering Body stainless steel film, the film has magnetic shielding and electric shielding effects, and has good weather resistance of stainless steel; the present invention has the advantages of reasonable process design, fast sputtering film forming speed, low production cost, etc., and it is an ideal A sputtering preparation method of an electromagnetic double shielding film.
Description
Technical field
The invention belongs to novel anti electromagnetic interference (EMI) shield technology field, particularly relate to a kind of sputter preparation method of double electromagnetic shielding membrane.
Background technology
Along with electronic system develops to lightening, microminiaturized, the machine box of present most electronic systems has all adopted plastics machine box.Plastics have plasticity-good, can produce in batches in a short time, advantage such as insulation, but, the anti-EMI effect of plastics is relatively poor, certain regional plating one deck electric conductivity of frosting or the higher material of permeability that need be after moulding, to reach the effect of electromagnetic shielding, the for example mobile phone of digital product, PDA, notebook computer, STB etc., they all will be at the anti-EMI mould material of plastics machine box internal surface plating, promptly plastics are carried out metalized, it is one important procedure that present high-frequency electronic product plastic casing is made.
At present the plastic-metal method mainly contains: electroplate (1): heavily contaminated, cost height, because electric shielding can not deep hole internal surface plating (as pilot hole, fixed screw holes etc.), enforcement along with the new environmental protection instruction WEEK of European Union, the product that contains objectionable impuritiess such as sexavalent chrome will ban use of, and will ban use of in electronic product as galvanized electro-magnetic screen layer; (2) electroless plating: heavily contaminated, cost height, since the local rete of surface point can thicken, so be not suitable for the plastic housing (particularly exquisite shell) of surface shape complexity; (3) conductive magneto-conductive coating, the magnetic conduction of organism mixing just conductive powder, effectiveness is poor, particularly above behind the 500MHz, almost do not have what shield effectiveness, and the high-frequency electronic product more needs to do electromagnetic shielding; (4) vacuum-evaporation: membranous layer binding force is low, and peeling comes off easily, the loose weathering resistance corrosion-resistant that causes of rete.(5) magnetron sputtering: magnetron sputtering technique can well solve this technological problems, can be in the even film forming of convex-concave surface, not only has good step coverage, can obtain satisfied shield effectiveness, and can obtain to be much better than galvanized exact position plating by mask, and the rete of magnetron sputtering has good bonding force, and is most important---magnetron sputtering is a kind of free of contamination environment-protective process.In a word, carry out the mainstream technology that plastic-metalization is the plating electromagnetic shielding film with magnetron sputtering; It is very low that but sputter prepares the production efficiency of magnetic shield film, is not suitable for the magnetron sputtering suitability for industrialized production, and this has seriously hindered the application of magnetron sputtering in plastic-metalization.
Summary of the invention
The object of the invention provide a kind of technological design rationally, the sputter preparation method of double electromagnetic shielding membrane that fast, the rete electric conductivity of spatter film forming speed and permeability are high.
The objective of the invention is to adopt such technical scheme to realize: its processing step is: the nickel chromium triangle class stainless target of selection special component austenite structure-frosting is cleaned and activation-metallization sputter plating.
The metallographic structure that solution of the present invention is based on nickel chromium triangle class duplex stainless steel has austenite and two kinds of phase structure characteristics of ferrite, and austenite is paramagnetic, and ferrite is ferromagnetic; In Metallkunde, to promote to form ferritic element and be converted to chromium equivalent ([Cr]=Cr+Mo+0.015Si+0.005Ti), ([Ni]=Ni+0.3C+0.005Mn) can find stainless ferrite of this composition and austenitic content according to chromium equivalent and nickel equivalent from the Xie Fuer chart will to promote to be converted to nickel equivalent by the austenitic element of formation.
According to above-mentioned principle, the present invention is when design target composition, selecting metallographic structure is austenite, and its chromium and nickel equivalent position are very near ferrite area, and increase formation ferrite and the big element of sputtering yield, reduce forming austenite and the little element of sputtering yield, like this after the sputter, just can obtain ferritic stainless steel film, the sputtering yield of formed ferrite element of the inventive method such as Cr etc. is all greater than the sputtering yield that forms austenite element Ni, Mn; For nickel chromium triangle class duplex stainless steel, its composition just is in the ceitical region that austenite and ferrite transform mutually, be easy to take place the variation of phase structure, well-known: as during the austenitic stainless steel welding, usually to cause occurring ferritic seam organization in the weld structure because of component segregation.
Because the present invention adopts austenitic nickel chromium triangle class stainless steel as sputtering target, in view of austenite is a paramagnetic material, it has higher spatter film forming speed, can obtain ferromagnetic ferritic stainless steel film fast by sputter, this film has magnetic shielding and electric shielding effect, and has the good weathering resistance of stainless material.
Embodiment
The preparation technology of double electromagnetic shielding membrane of the present invention is: the nickel chromium triangle class stainless target of selection special component austenite structure-frosting is cleaned and activation-metallization sputter plating.
Below processing step is described further:
(1) this is an austenite to select the target composition, and its chromium and nickel equivalent position are very near ferrite area, and contain more formation ferrite and the big element of sputtering yield, contain less formation austenite and the little element of sputtering yield, after becoming to distribute, fusion-cast annealing, and the stainless target of one-tenth austenite structure; Also can select ready-made national standard model and meet the stainless steel that mentioned component requires, be machined into stainless target;
(2) frosting cleans and activation: will be placed in the scavenging solution by the plating plastic component, ultrasonic cleaning after the taking-up oven dry, covered certain mask at plastic component after 20 minutes, put on the vacuum coater planet horse, and installed stainless target.Be evacuated to 10
-1After Pa is following, charge into argon gas, open radio-frequency power supply to vacuum tightness 10～0.1Pa, by the intravital radio-frequency coil discharge generation of vacuum chamber plasma body, frosting is carried out activation treatment, close radio-frequency power supply after 2～20 minutes time, the plasma surface activation finishes; Described plastic component is that a kind of material in ABS, ABS+PC, PC or the PC+ glass fibre is made.
(3) metallization sputter plating: open the sputtering target power supply, carry out d.c. sputtering, behind 0.1～100 micron of the thickness of the anti-EMI film of plating, put into atmosphere and open vacuum cavity, take out the plastic component of the good double electromagnetic shielding membrane of lining, at this moment the film of frosting has higher specific conductivity and magnetic permeability, can be used as electromagnetic shielding film and uses.
The major metal composition of described double electromagnetic shielding membrane is: Fe:30%～85%, Cr:5%～50%, Ni:1%～20%, Ti:1～10%; Each metal ingredient according to chromium equivalent ([Cr]=Cr+Mo+0.015Si+0.005Ti) and nickel equivalent (and the composition proportion of [Ni]=Ni+0.3C+0.005Mn), the nickel equivalent of calculating [Ni] is less than 24, chromium equivalent is greater than 16.
Embodiment:
(1) stainless steel plate of selection national standard model 1Crl8Ni9Ti, line cuts into stainless target;
(2) frosting cleans: will be placed in the scavenging solution by the plating plastic component, ultrasonic cleaning was taken out oven dry after 20 minutes, and the plastics that cover certain mask are put on the vacuum coater planet horse, installed stainless target, was evacuated to local vacuum tightness 5 * 10
-3Behind the Pa, charge into argon gas to vacuum tightness 0.5Pa, and be stabilized in this vacuum tightness, open radio-frequency power supply, by the intravital radio-frequency coil discharge generation of vacuum chamber plasma body, frosting is carried out activation treatment, improve the bonding force of back metalized film, close radio-frequency power supply after 10 minutes, the plasma surface activation finishes;
Described plastic component is that a kind of material in ABS, ABS+PC, PC or the PC+ glass fibre is made.
(3) metallization sputter plating: open the sputtering target power supply, feed-in power density 20W/cm
2The planet horse rotates, open baffle plate after stable and begin d.c. sputtering, after ten minutes behind the stainless steel membrane of one micron of magnet surface lining one layer thickness, kept in a vacuum 10 minutes, and put into atmosphere again and open vacuum cavity, take out the plastic component of the good double electromagnetic shielding membrane of lining, at this moment the film of frosting has higher specific conductivity and magnetic permeability, can be used as electromagnetic shielding film and uses;
Described sputtering target is formed by the cutting of nickel chromium triangle class duplex stainless steel 1Crl8Ni9Ti sheet material line, and its diameter is 60 millimeters, and chromium and nickel equivalent are (18,7), and its standard gold phase constitution is the austenite that closes on ferrite area; Ferrite will appear in its when the composition segregation (as weld structure); The Cr sputtering yield is 0.67, Ni is 0.66, Ti is 0.22, Fe is 0.53, because the actual sputtering yield of ferromagnetic Ni, Fe is lower, composition after the sputter is about Cr0.3Ni0.06Ti0.01, chromium and nickel equivalent are (35,6), have fallen into the ferrite zone, so when the sputter stainless steel, the film that obtains belongs to ferritic structure, is target thereby reach the employing paramagnetic material, and sputter obtains the effect of ferromagnetic metal film.
Test according to national standard:
(1) through the normal temperature weathering resistance salt-fog test of 10% sodium-chlor, do not see corrosion after 48 hours;
(2) 25 ℃ and 70 ℃ are thermal shock experiment 20 times repeatedly, does not see that peeling comes off;
(3) normal temperature solution wetted method (10% sodium-chlor+2% gelatin solution) is measured, and rete is not seen blue spot and Cavitations, and the rete densification is described;
(4) standard tension instrumentation examination membranous layer binding force is greater than 7MPa;
(5) have certain magnetic attraction with the magnetic iron powder test, square resistance is lower than 8;
(6) its metallographic structure analysis is identified: target is an austenite structure, and the sputter rear film is a ferritic structure;
Experimental result shows: rete can be used as double electromagnetic shielding membrane fully and uses, and rete has good bonding force and weathering resistance.
Claims (5)
1, the sputter preparation method of double electromagnetic shielding membrane, its preparation technology select the nickel chromium triangle class stainless target of special component austenite structure-frosting is cleaned and activation-metallization sputter is plated.
2, the sputter preparation method of double electromagnetic shielding membrane according to claim 1, it is characterized in that described sputtering target is formed by the cutting of nickel chromium triangle class duplex stainless steel 1Cr18Ni9Ti sheet material line, its diameter is 60 millimeters, chromium and nickel equivalent are (18,7), its standard gold phase constitution is the austenite that closes on ferrite area.
3, the sputter preparation method of double electromagnetic shielding membrane according to claim 1 is characterized in that described frosting cleans and activation, metallization sputter plating step are:
Frosting cleans: will be placed in the scavenging solution by the plating plastic component, ultrasonic cleaning was taken out oven dry after 20 minutes;
The frosting activation: the plastics that will cover certain mask are put on the vacuum coater planet horse, are evacuated to local vacuum tightness 5 * 10
-3Behind the Pa, charge into argon gas to vacuum tightness 0.5Pa, and be stabilized in this vacuum tightness, open radio-frequency power supply, by the intravital radio-frequency coil discharge generation of vacuum chamber plasma body, frosting is carried out activation treatment, improve the bonding force of back metalized film, close radio-frequency power supply after 10 minutes, the plasma surface activation finishes;
Metallization sputter plating: open the sputtering target power supply, feed-in power density 20W/cm
2The planet horse rotates, open baffle plate after stable and begin d.c. sputtering, after ten minutes behind the stainless steel membrane of one micron of magnet surface lining one layer thickness, kept in a vacuum 10 minutes, and put into atmosphere again and open vacuum cavity, take out the plastic component of the good double electromagnetic shielding membrane of lining, at this moment the film of frosting has higher specific conductivity and magnetic permeability, can be used as electromagnetic shielding film and uses.
4, the sputter preparation method of double electromagnetic shielding membrane according to claim 3 is characterized in that described plastic component is that a kind of material in ABS, ABS+PC, PC or the PC+ glass fibre is made.
5, the sputter preparation method of double electromagnetic shielding membrane according to claim 3 is characterized in that the major metal composition of described double electromagnetic shielding membrane is: Fe:30%～85%, Cr:5%～50%, Ni:1%～20%, Ti:1～10%; Each metal ingredient according to chromium equivalent ([Cr]=Cr+Mo+0.015Si+0.005Ti) and nickel equivalent (and the composition proportion of [Ni]=Ni+0.3C+0.005Mn), the nickel equivalent of calculating [Ni] is less than 24, chromium equivalent is greater than 16.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100499123A CN100494478C (en) | 2006-03-20 | 2006-03-20 | Sputtering preparation method of electromagnetic double shielding film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100499123A CN100494478C (en) | 2006-03-20 | 2006-03-20 | Sputtering preparation method of electromagnetic double shielding film |
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| Publication Number | Publication Date |
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| CN1818130A true CN1818130A (en) | 2006-08-16 |
| CN100494478C CN100494478C (en) | 2009-06-03 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700564A (en) * | 2013-12-27 | 2014-04-02 | 苏州市奥普斯等离子体科技有限公司 | Preparation device for molded interconnection device |
| CN101386953B (en) * | 2007-09-14 | 2015-07-08 | 精工爱普生株式会社 | Method of manufacturing device and housing material |
| CN108080645A (en) * | 2017-12-18 | 2018-05-29 | 南通金源智能技术有限公司 | A kind of method for reducing 316L stainless steel spherical powder hollow rates |
| CN111455337A (en) * | 2020-04-30 | 2020-07-28 | 深圳市汉嵙新材料技术有限公司 | Single-side conductive copper-plated PI film and preparation method thereof |
| CN111500983A (en) * | 2020-04-30 | 2020-08-07 | 深圳市汉嵙新材料技术有限公司 | A kind of aluminum alloy copper-plated substrate and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5880125A (en) | 1981-11-07 | 1983-05-14 | Tdk Corp | Magnetic head |
| KR100504049B1 (en) * | 2003-03-18 | 2005-07-27 | (주)이오스테크놀로지 | Metal thin film and its deposition method for electro-magnetic shielding in the plastic objects using sputter and vaccum evaporation |
| CN1209953C (en) * | 2004-01-15 | 2005-07-06 | 北京东明化学工业有限公司 | Preparing method for surface electromagnetic screening membrane layer in plastic mobile shell |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101386953B (en) * | 2007-09-14 | 2015-07-08 | 精工爱普生株式会社 | Method of manufacturing device and housing material |
| CN103700564A (en) * | 2013-12-27 | 2014-04-02 | 苏州市奥普斯等离子体科技有限公司 | Preparation device for molded interconnection device |
| CN108080645A (en) * | 2017-12-18 | 2018-05-29 | 南通金源智能技术有限公司 | A kind of method for reducing 316L stainless steel spherical powder hollow rates |
| CN111455337A (en) * | 2020-04-30 | 2020-07-28 | 深圳市汉嵙新材料技术有限公司 | Single-side conductive copper-plated PI film and preparation method thereof |
| CN111500983A (en) * | 2020-04-30 | 2020-08-07 | 深圳市汉嵙新材料技术有限公司 | A kind of aluminum alloy copper-plated substrate and preparation method thereof |
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| CN100494478C (en) | 2009-06-03 |
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