CN111455337A - Single-side conductive copper-plated PI film and preparation method thereof - Google Patents
Single-side conductive copper-plated PI film and preparation method thereof Download PDFInfo
- Publication number
- CN111455337A CN111455337A CN202010363610.3A CN202010363610A CN111455337A CN 111455337 A CN111455337 A CN 111455337A CN 202010363610 A CN202010363610 A CN 202010363610A CN 111455337 A CN111455337 A CN 111455337A
- Authority
- CN
- China
- Prior art keywords
- film
- plated
- copper alloy
- copper
- conductive copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000011651 chromium Substances 0.000 claims abstract description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 36
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 31
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 25
- 238000007747 plating Methods 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 17
- 239000013077 target material Substances 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 238000003723 Smelting Methods 0.000 claims description 8
- 238000005266 casting Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of electromagnetic shielding materials, and particularly relates to a single-side conductive copper-plated PI film and a preparation method thereof, wherein the preparation method comprises the following steps: step 1, plating chromium metal on a PI film by a magnetron sputtering method; step 2, plating the copper alloy on the copper alloy target material on a chromium supporting layer of the first PI film by a magnetron sputtering method; and 3, plating nickel metal on the copper alloy shielding layer of the second PI film by a magnetron sputtering method to obtain the single-side conductive copper-plated PI film. The invention has the beneficial effects that: the single-side conductive copper-plated PI film obtained by the invention has stronger corrosion resistance and good mechanical property. Under the condition of 50MHZ-1.5GHZ, the shielding effectiveness reaches 80-130 dB. The single-side conductive copper-plated PI film is thin and low in density, does not obviously increase the overall weight of an electronic product, and reduces occupied space.
Description
Technical Field
The invention belongs to the technical field of electromagnetic shielding materials, and particularly relates to a single-side conductive copper-plated PI film and a preparation method thereof.
Background
With the development of technology, electronic products are required to be lighter in the market, so that the integration level of various integrated chips is higher. When a large number of various chips are operated, a certain amount of electromagnetic radiation is generated outwards. The electromagnetic radiation can generate interference to external electromagnetic signals and influence the use of other products for transmitting signals or receiving signals,
the following methods are generally known in the art: 1. for example, in the power adapter of the notebook computer, the inside of the power adapter is firstly wrapped by an insulating sheet and then wrapped by an aluminum foil, and the aluminum foil plays a role in shielding. The insulating sheet and the aluminum foil are manually or mechanically arranged, so that the process is complicated, and the insulating property is unreliable. 2. The chip or the whole circuit board is covered by the metal shielding cover, and when electromagnetic waves encounter conductive metal, the electromagnetic waves can be reflected back, so that the electromagnetic wave shielding effect is achieved. The method has the following defects: a. the metal shielding case has higher density, so that the weight of the electronic product is obviously increased; b. the metal shield is conductive and the shield needs to be spaced a distance from the chip so that the shield occupies a large space.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the single-side conductive copper-plated PI film is insulating, light in weight and good in electromagnetic shielding effect, and the preparation method thereof.
In order to solve the technical problems, the invention adopts the technical scheme that: the preparation method of the single-side conductive copper-plated PI film comprises the following steps:
step 1, plating chromium metal on a PI film by a magnetron sputtering method to obtain a first PI film with a chromium support layer;
step 2, plating the copper alloy on the copper alloy target material on a chromium supporting layer of the first PI film by a magnetron sputtering method to obtain a second PI film with a copper alloy shielding layer;
the copper alloy target comprises the following components in percentage by weight: 0.2-0.6% of Cr, 1-3% of Al, 0.5-1% of Mn and the balance of Cu;
and 3, plating nickel metal on the copper alloy shielding layer of the second PI film by a magnetron sputtering method to obtain the single-side conductive copper-plated PI film.
The other technical scheme of the invention is as follows: the single-side conductive copper-plated PI film prepared by the preparation method is provided.
The invention has the beneficial effects that: the single-sided conductive copper-plated PI film can be used for a power adapter of a notebook computer, the PI film layer is insulated and can replace an insulating sheet to achieve an insulating effect, one side of the PI film in the single-sided conductive copper-plated PI film can be attached to a short distance or a close chip, occupied space is reduced, a plurality of metal shielding layers on the PI film can replace aluminum foil to achieve a better electromagnetic shielding effect, and the shielding efficiency can reach 80-115dB under the condition of 50MHZ-1.5 GHZ. The single-side conductive copper-plated PI film is thin and low in density, and the weight of the whole electronic product such as a notebook computer power adapter is not obviously increased (the thickness of the metal shielding layer is generally more than 100 mu m). At the same time. The metal shielding layer shielding shell replaces a copper foil coil, so that the metal shielding layer shielding shell has strong corrosion resistance and protection capability, cannot deform or break, and has good reliability.
Detailed Description
In order to explain the technical content, the objects and the effects of the present invention in detail, the following description will be given with reference to the embodiments.
The invention provides a preparation method of a single-side conductive copper-plated PI film, which comprises the following steps:
step 1, plating chromium metal on a PI film by a magnetron sputtering method to obtain a first PI film with a chromium support layer;
step 2, plating the copper alloy on the copper alloy target material on a chromium supporting layer of the first PI film by a magnetron sputtering method to obtain a second PI film with a copper alloy shielding layer;
the copper alloy target comprises the following components in percentage by weight: 0.2-0.6% of Cr, 1-3% of Al, 0.5-1% of Mn and the balance of Cu;
and 3, plating nickel metal on the copper alloy shielding layer of the second PI film by a magnetron sputtering method to obtain the single-side conductive copper-plated PI film.
In the single-sided conductive copper-plated PI film and the preparation method thereof, three plating layers with different functions are arranged on the single-sided conductive copper-plated PI film and sequentially comprise a chromium supporting layer, a copper alloy shielding layer and a nickel metal layer. It has the following functions: 1. chromium is doped in the copper alloy shielding layer to improve the strength and conductivity of the copper alloy, Mn is doped to improve the oxidation resistance, and aluminum is also doped in the copper alloy shielding layer to ensure that the copper alloy shielding layer is stable, uniform and free from coagulation when being sputtered to the chromium supporting layer by magnetron sputtering. 2. The nickel metal layer has good corrosion resistance and protects the copper alloy shielding layer from being oxidized and damaged. 3. The chromium support layer provides sufficient bonding strength and hardness support for the copper alloy shielding layer, so that the bonding force between the copper alloy shielding layer and the PI film is increased. The electromagnetic shielding capability of the chromium supporting layer is also stronger than that of the copper alloy shielding layer, so that the electromagnetic shielding capability of the single-side conductive copper-plated PI film is further improved.
Preferably, in the above method for preparing a single-sided conductive copper-plated PI film, the thickness of the PI film is 25 to 75 μm, the thickness of the chromium support layer is 0.1 to 1 μm, the thickness of the copper alloy shielding layer is 2 to 8 μm, and the thickness of the nickel plated second PI film is 0.2 to 0.6 μm.
Preferably, in the above method for preparing a single-sided conductive copper-plated PI film, the method for preparing the copper alloy target material is:
the raw materials of Cr, Al, Mn and Cu are smelted and alloyed by an induction smelting method in a vacuum atmosphere at the temperature of 1100-1200 ℃, and then the alloyed molten liquid is cast into a casting mould to obtain the copper alloy target.
Preferably, in the above method for preparing a single-sided conductive copper-plated PI film, the thickness of the PI film is 30 μm, the thickness of the chromium support layer is 0.5 μm, the thickness of the copper alloy shielding layer is 5 μm, and the thickness of the nickel plated layer to the second PI film is 0.3 μm.
Preferably, in the above method for preparing a single-sided conductive copper-plated PI film, the copper alloy target material comprises, by weight: 0.3% of Cr, 1.5% of Al, 0.7% of Mn and the balance of Cu.
Preferably, in the above method for preparing a single-sided conductive copper-plated PI film, a circulating water cooling device is provided on the copper alloy target.
Example one
A preparation method of a single-side conductive copper-plated PI film comprises the following steps:
step 1, plating chromium metal on a PI film by a magnetron sputtering method to obtain a first PI film with a chromium support layer;
step 2, plating the copper alloy on the copper alloy target material on a chromium supporting layer of the first PI film by a magnetron sputtering method to obtain a second PI film with a copper alloy shielding layer;
the preparation method of the copper alloy target comprises the following steps: preparing Cr, Al, Mn and Cu raw materials, then smelting and alloying at the temperature of 1100-1200 ℃ in a vacuum atmosphere by using an induction smelting method, and then casting the alloyed molten liquid into a casting mold to obtain the copper alloy target.
The copper alloy target comprises the following components in percentage by weight: 0.2% of Cr, 1% of Al, 0.5% of Mn and the balance of Cu;
and 3, plating nickel metal on the copper alloy shielding layer of the second PI film by a magnetron sputtering method to obtain the single-side conductive copper-plated PI film.
The thickness of the PI film is 25-75 μm, the thickness of the chromium supporting layer is 0.1-1 μm, the thickness of the copper alloy shielding layer is 2-8 μm, and the thickness of the nickel plated to the second PI film is 0.2-0.6 μm.
Example two
A preparation method of a single-side conductive copper-plated PI film comprises the following steps:
step 1, plating chromium metal on a PI film by a magnetron sputtering method to obtain a first PI film with a chromium support layer;
step 2, plating the copper alloy on the copper alloy target material on a chromium supporting layer of the first PI film by a magnetron sputtering method to obtain a second PI film with a copper alloy shielding layer;
the preparation method of the copper alloy target comprises the following steps: preparing Cr, Al, Mn and Cu raw materials, then smelting and alloying at the temperature of 1100-1200 ℃ in a vacuum atmosphere by using an induction smelting method, and then casting the alloyed molten liquid into a casting mold to obtain the copper alloy target.
The copper alloy target comprises the following components in percentage by weight: 0.6% of Cr, 3% of Al, 1% of Mn and the balance of Cu;
step 3, plating nickel metal on the copper alloy shielding layer of the second PI film by a magnetron sputtering method to obtain a single-side conductive copper-plated PI film;
the thickness of the PI film is 25-75 μm, the thickness of the chromium supporting layer is 0.1-1 μm, the thickness of the copper alloy shielding layer is 2-8 μm, and the thickness of the nickel plated to the second PI film is 0.2-0.6 μm.
EXAMPLE III
A preparation method of a single-side conductive copper-plated PI film comprises the following steps:
step 1, plating chromium metal on a PI film by a magnetron sputtering method to obtain a first PI film with a chromium support layer;
step 2, plating the copper alloy on the copper alloy target material on a chromium supporting layer of the first PI film by a magnetron sputtering method to obtain a second PI film with a copper alloy shielding layer;
the preparation method of the copper alloy target comprises the following steps: preparing Cr, Al, Mn and Cu raw materials, then smelting and alloying at the temperature of 1100-1200 ℃ in a vacuum atmosphere by using an induction smelting method, and then casting the alloyed molten liquid into a casting mold to obtain the copper alloy target.
The copper alloy target comprises the following components in percentage by weight: 0.3% of Cr, 1.5% of Al, 0.7% of Mn and the balance of Cu;
and 3, plating nickel metal on the copper alloy shielding layer of the second PI film by a magnetron sputtering method to obtain the single-side conductive copper-plated PI film.
The thickness of the PI film is 25-75 μm, the thickness of the chromium supporting layer is 0.1-1 μm, the thickness of the copper alloy shielding layer is 2-8 μm, and the thickness of the nickel plated to the second PI film is 0.2-0.6 μm.
The magnetron sputtering of chromium metal, copper alloy and nickel metal of the above examples was carried out under vacuum at a degree of vacuum of 10- 3From MPa to 10-5MPa. And unwinding and winding the PI film in a vacuum chamber. And sputtering and coating while rolling. The speed is 2-10 m/min. Each magnetron sputtering is implemented by installing 2-50 magnetron sputtering of each metal, heating the target materials in an ion beam mode, and adding a cooling device (circulating water cooling) behind each target material, so that the temperature of the whole coating environment is low, and the device is protected and can be produced in batches in a coiling manner.
The technological parameters are as follows: the power of the target power supply is set to be 30-40kw, argon is used as the working gas, the flow rate of the argon is 200-.
The single-sided conductive copper-plated PI film prepared by the preparation method of the single-sided conductive copper-plated PI film is subjected to mechanical property test on an electronic universal tester, and the tensile strength of the single-sided conductive copper-plated PI film is 110-160N/mm2(ii) a Yield strength of 120-150N/mm2Excellent impact resistance and reliability; the bonding strength reaches 3.5N/cm2In the above way, the plated metal film layer can obtain excellent shielding effect under a lower thickness; and compared with other copper plating methods, the method reduces pollution and is more environment-friendly. The electromagnetic shielding resistance of the single-sided conductive copper-plated PI film is 70-115dB (the working frequency is 50MHz-1 GHz). It has strong corrosion resistance and good mechanical property. The electromagnetic shielding and protection device can be used for electromagnetic shielding and protection of the notebook computer power adapter.
Test examples
Under the condition of the same other parameters, samples 1 to 4 were prepared according to the method for preparing the single-sided conductive copper-plated PI film described in the third example, and the product performance test results are shown in table 1.
TABLE 1
From the above description, in the preparation method of the single-sided conductive copper-plated PI film, when the thickness of the PI film is 30 μm, the thickness of the chromium supporting layer is 0.5 μm, the thickness of the copper alloy shielding layer is 5 μm, and the thickness of the nickel plated on the second PI film is 0.3 μm, the electromagnetic shielding performance of the single-sided conductive copper-plated PI film reaches 120dB, and the tensile strength is 550N/mm2At the moment, the single-side conductive copper-plated PI film is thin in thickness, low in cost and highest in cost performance. The electromagnetic shielding and protection device is most suitable for electromagnetic shielding and protection of the notebook computer power adapter.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent modifications made by the present invention in the specification or directly or indirectly applied to the related technical field are included in the scope of the present invention.
Claims (7)
1. A preparation method of a single-side conductive copper-plated PI film is characterized by comprising the following steps:
step 1, plating chromium metal on a PI film by a magnetron sputtering method to obtain a first PI film with a chromium support layer;
step 2, plating the copper alloy on the copper alloy target material on a chromium supporting layer of the first PI film by a magnetron sputtering method to obtain a second PI film with a copper alloy shielding layer;
the copper alloy target comprises the following components in percentage by weight: 0.2-0.6% of Cr, 1-3% of Al, 0.5-1% of Mn and the balance of Cu;
and 3, plating nickel metal on the copper alloy shielding layer of the second PI film by a magnetron sputtering method to obtain the single-side conductive copper-plated PI film.
2. The method for preparing the single-sided conductive copper-plated PI film according to claim 1, wherein the thickness of the PI film is 25-75 μm, the thickness of the chromium support layer is 0.1-1 μm, the thickness of the copper alloy shielding layer is 2-8 μm, and the thickness of the nickel plated second PI film is 0.2-0.6 μm.
3. The method for preparing the single-sided conductive copper-plated PI film according to claim 1, wherein the method for preparing the copper alloy target comprises the following steps:
the raw materials of Cr, Al, Mn and Cu are smelted and alloyed by an induction smelting method in a vacuum atmosphere at the temperature of 1100-1200 ℃, and then the alloyed molten liquid is cast into a casting mould to obtain the copper alloy target.
4. The method for preparing the single-sided conductive copper-plated PI film according to claim 1, wherein the PI film has a thickness of 30 μm, the chromium support layer has a thickness of 0.5 μm, the copper alloy shielding layer has a thickness of 5 μm, and the nickel plating to the second PI film has a thickness of 0.3 μm.
5. The method for preparing the single-sided conductive copper-plated PI film according to claim 1, wherein the copper alloy target comprises the following components in percentage by weight: 0.3% of Cr, 1.5% of Al, 0.7% of Mn and the balance of Cu.
6. The method for preparing the single-sided conductive copper-plated PI film according to claim 1, wherein a circulating water cooling device is arranged on the copper alloy target.
7. The single-sided conductive copper-plated PI film prepared by the preparation method of the single-sided conductive copper-plated PI film as claimed in any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010363610.3A CN111455337A (en) | 2020-04-30 | 2020-04-30 | Single-side conductive copper-plated PI film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010363610.3A CN111455337A (en) | 2020-04-30 | 2020-04-30 | Single-side conductive copper-plated PI film and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111455337A true CN111455337A (en) | 2020-07-28 |
Family
ID=71676175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010363610.3A Pending CN111455337A (en) | 2020-04-30 | 2020-04-30 | Single-side conductive copper-plated PI film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111455337A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114075655A (en) * | 2020-08-22 | 2022-02-22 | 昆山鑫美源电子科技有限公司 | Conductive film, preparation method of conductive film, current collection and transmission material and energy storage device |
| CN116024535A (en) * | 2023-03-28 | 2023-04-28 | 苏州浪潮智能科技有限公司 | Method and equipment for preparing radiation film, radiation film and optical device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020075643A (en) * | 2001-03-27 | 2002-10-05 | 임조섭 | Method for forming of the EMI protecting layer on a plastic substrate and an EMI protecting layer thereof |
| CN1818130A (en) * | 2006-03-20 | 2006-08-16 | 浙江大学 | Production of dual electromagnetic shielding screen by sputtering method |
| CN107109633A (en) * | 2015-05-21 | 2017-08-29 | 捷客斯金属株式会社 | Copper alloy sputtering target and its manufacture method |
| CN109306459A (en) * | 2017-07-28 | 2019-02-05 | 苏州思锐达新材料有限公司 | Two-sided conductive electromagnetic shielding material of a kind of high temperature resistant and the preparation method and application thereof |
| CN109306487A (en) * | 2017-07-28 | 2019-02-05 | 苏州思锐达新材料有限公司 | Electromagnetic shielding material and the preparation method and application thereof based on Kapton |
-
2020
- 2020-04-30 CN CN202010363610.3A patent/CN111455337A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020075643A (en) * | 2001-03-27 | 2002-10-05 | 임조섭 | Method for forming of the EMI protecting layer on a plastic substrate and an EMI protecting layer thereof |
| CN1818130A (en) * | 2006-03-20 | 2006-08-16 | 浙江大学 | Production of dual electromagnetic shielding screen by sputtering method |
| CN107109633A (en) * | 2015-05-21 | 2017-08-29 | 捷客斯金属株式会社 | Copper alloy sputtering target and its manufacture method |
| CN109306459A (en) * | 2017-07-28 | 2019-02-05 | 苏州思锐达新材料有限公司 | Two-sided conductive electromagnetic shielding material of a kind of high temperature resistant and the preparation method and application thereof |
| CN109306487A (en) * | 2017-07-28 | 2019-02-05 | 苏州思锐达新材料有限公司 | Electromagnetic shielding material and the preparation method and application thereof based on Kapton |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114075655A (en) * | 2020-08-22 | 2022-02-22 | 昆山鑫美源电子科技有限公司 | Conductive film, preparation method of conductive film, current collection and transmission material and energy storage device |
| CN114075655B (en) * | 2020-08-22 | 2024-01-12 | 昆山鑫美源电子科技有限公司 | Conductive film, method for producing conductive film, current collecting and transmitting material, and energy storage device |
| CN116024535A (en) * | 2023-03-28 | 2023-04-28 | 苏州浪潮智能科技有限公司 | Method and equipment for preparing radiation film, radiation film and optical device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4948579B2 (en) | Heat-resistant copper foil having excellent high-frequency transmission characteristics and manufacturing method thereof, circuit board, copper-clad laminate and manufacturing method thereof | |
| JP5886417B2 (en) | Surface treated copper foil | |
| CN111455337A (en) | Single-side conductive copper-plated PI film and preparation method thereof | |
| JP4704025B2 (en) | Roughening rolled copper foil for high frequency circuit and method for producing the same | |
| KR20100028365A (en) | Electromagnetic interference suppressing hybrid sheet | |
| CN118109736B (en) | Rare earth doped high-entropy alloy composite wave-absorbing material with thin thickness and excellent reflection loss and preparation method thereof | |
| JPWO2013147115A1 (en) | Surface-treated copper foil | |
| CN109609823A (en) | A kind of magnesium-lithium alloy with high shielding performance and preparation method thereof | |
| CN110351998A (en) | The production method and electromagnetic shielding film of millimeter wave electromagnetic shielding film | |
| CN110004404A (en) | A kind of preparation method of self-supporting micron copper foil | |
| CN103849800B (en) | Preparation method of deformed magnesium alloy containing Cu with high conductivity and high electromagnetic shielding performance | |
| CN110970729B (en) | Omnidirectional shielding antenna structure and antenna | |
| CN112111233A (en) | Thermosetting conductive shielding adhesive film and preparation method thereof | |
| CN114038642B (en) | Fe-Co soft magnetic alloy wave-absorbing powder and preparation method thereof | |
| CN111394709B (en) | Metal-plated graphite sheet and preparation method thereof | |
| JP7716792B2 (en) | NFC antenna for mobile phone and method for preparing electromagnetic wave absorbing material thereof | |
| KR20190089732A (en) | Copper foil for flexible printed circuit, and copper clad laminate, flexible printed circuit and electronic device using copper foil | |
| JP2006155899A (en) | Copper alloy composite foil, its manufacturing method and ultrahigh frequency transmission circuit using the copper alloy composite foil | |
| CN113121982B (en) | Absorption loss type gradient structure composite electromagnetic shielding material and preparation method thereof | |
| CN117655103A (en) | Production method of high-deflection rolled copper foil for high-frequency high-speed communication | |
| CN108429014A (en) | A kind of omnidirectional angle antenna | |
| CN111500983A (en) | A kind of aluminum alloy copper-plated substrate and preparation method thereof | |
| CN111647783A (en) | Aluminum alloy profile for 5G equipment and preparation method thereof | |
| CN219371335U (en) | Microstrip line | |
| CN112389046B (en) | Processing technology of double-layer film material belt with film pasting and film plating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |