[go: up one dir, main page]

CN1608324A - 按两个时间上错开的步骤制造光导led体的方法 - Google Patents

按两个时间上错开的步骤制造光导led体的方法 Download PDF

Info

Publication number
CN1608324A
CN1608324A CN02826058.9A CN02826058A CN1608324A CN 1608324 A CN1608324 A CN 1608324A CN 02826058 A CN02826058 A CN 02826058A CN 1608324 A CN1608324 A CN 1608324A
Authority
CN
China
Prior art keywords
light
chip
led body
flowable
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02826058.9A
Other languages
English (en)
Inventor
托斯滕·里克金
杰姆·奥尔凯
克里斯蒂纳·韦伯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Odelo Led GmbH
Original Assignee
Odelo Led GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7710271&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1608324(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Odelo Led GmbH filed Critical Odelo Led GmbH
Publication of CN1608324A publication Critical patent/CN1608324A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/16Making multilayered or multicoloured articles
    • B29C45/1671Making multilayered or multicoloured articles with an insert
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14836Preventing damage of inserts during injection, e.g. collapse of hollow inserts, breakage
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17Component parts, details or accessories; Auxiliary operations
    • B29C45/26Moulds
    • B29C45/27Sprue channels ; Runner channels or runner nozzles
    • B29C45/2701Details not specific to hot or cold runner channels
    • B29C45/2708Gates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)

Abstract

本发明涉及用一种在最终凝固前可流动的材料在模具内制造光导LED体的方法,各LED体包括至少一个发光芯片和至少两个与芯片连接的接头。为此,至少一种可流动的材料通过至少两个不同地点中至少一个在时间上错开地加入模具内。首先加入的可流动材料用于在芯片和接头所在区内绕流芯片和接头。然后在处于芯片和接头区之外的区域内加入一种或多种可流动的材料。采用本发明发展了一种制造光导LED体的方法,按此方法,所有制成的发光二极管几乎有相同的光学特性,以及避免由于损坏各LED电子组件而成为废品。

Description

按两个时间上错开的步 骤制造光导LED体的方法
用一种在最终凝固前可流动的材料在模具内制造光导LED(发光二极管)体的方法,其中,各LED体包括至少一个发光芯片和至少两个与芯片连接的电接头。
由JP 1-69020 A已知一种压注LED的方法,其中,在第一个步骤中首先在一预铸模内压注在电子部分的外部。在这里,此预铸模一直延伸到发光的光导体前部轮廓。在第二个步骤中从预铸模取出的已冷却的LED置入一最终铸模内,以便通过压注技术成型LED的后部管座部分。
此外,由EP0635744A2已知一种LED,它的LED体有一个体积,这一体积显著超过普通的标准LED的体积。为此,按一种实施方案此LED体由多个部分组成。通过将一个标准LED粘入另一个较大的透明光导体内进行组装,光导体的任务是发光。在这里,标准LED的体积只是光导体体积的一小部分。粘合缝一方面由于被粘结的LED部分与胶粘剂之间密度不同以及另一方面由于夹杂气泡和不同的粘合缝厚度,导致恶化发光。
按另一种方案,LED体和分开的光导体组成一个部分。在此LED中,在浇铸过程的冷却和硬化阶段存在无法控制的收缩的危险。在整体式压注时,由于大的注入量和注入速度,几乎不能避免在大部分制成的发光二极管中芯片断线。
因此本发明的目的是发展一种制造光导LED体的方法,其中,几乎所有制成的发光二极管有相同的光学特性,以及避免由于损坏各LED电子组件而成为废品。
此目的通过主权利要求的特征达到。为此,至少一种可流动的材料通过至少两个不同的地点在时间上相互错开地加入模具内。首先加入的可流动的材料在芯片和接头的所在区内绕流芯片和接头。然后在处于芯片和接头区之外的区域内加入一种或多种可流动的材料。
采用按本发明的方法,发光二极管分成两个彼此相继的步骤例如用压注技术在模具内制造。在第一个步骤内,例如在一压注模内,在置入电子部分后,例如从未来的LED的后侧方向加入小量塑料。此量正好完全围铸或围注电子部分。此小的量迅速硬化并因而对电子部分形成良好的保护。尤其是敏感的、细而悬伸的、将阳极与发光芯片连接起来的底脚线,被持久和受保护地固定在其位置上。
刚加入的材料尚在塑化阶段,可按第二个步骤,从另一个注入地点将新的要加入的材料注入模具例如大体积的其余部分内。因为现在不存在损坏电子部分的危险,所以压注过程可以用大的体积流量和高的压注速度进行。甚至在这里必要时补充的压注过程也不会对底脚线造成任何伤害。在时间上按先后加入的材料导致一种均匀的光学体,从而有可能在阻尼最小的情况下可精确计算地发光。
由从属权利要求和下面对示意表示的实施例的说明给出本发明的其他详情。其中:
图1  LED体纵剖面;
图2  图2的俯视图;
图3  组合式LED体纵剖面;
图4  图3的俯视图;以及
图5  有单独的光导体的LED体纵剖面。
图1和2表示一种大体积的LED(10),它的光导体(21、41)通过压注技术分成至少两个压注步骤制造。
在图1中表示的LED(10)有一个理论上分成两部分的体。体的下部是一个所谓的电子部分保护体(41),而图中的上部称光导体(21)。
按图1 LED(10)下部区的电子部分保护体(41)通常包围电接头(1、4)、发光芯片(6)、底脚线(2)和反射槽(5)。芯片(6)定位在反射槽(5)内。芯片(6)通过底脚线(2)与阳极(1)触点接通。电子部分保护体(41)的材料在这里是一种可喷注的透明的例如染色的热塑性塑料(53),例如一种改进的聚羟甲基丙烯酰胺(PMMI)。
在电子部分保护体(41)上面设光导体(21)。在两个体(21、41)之间,存在一个在图1和3中表示为波纹线也许是虚构的分界缝(61)。光导体(21)例如有截锥的形状。它与芯片(6)处于相对位置的端面(22),所谓主光发射面,按图2半边分别设计为环带透镜/菲涅耳透镜(23)和有鳞片状结构的散射面(24)。主光发射面(22)可按其光学目的有一个简单的几何曲率,例如凸的或凹的形状,或可以是一个任意的自由造型的空间表面。它也可以通过叠加各种规则的几何表面元素,如圆锥形、棱锥形、半球形、环面段等组成。
在图1中表示的截锥体的侧壁是所谓的辅助光发射面(26)。它在这里仅作为举例是一个外表面。表面(26)可成形为光滑的或某种型面。它还可以整个或局部加上透明的或不透光的涂层。例如它可以电镀加膜成附加的反射面。它可以采用几乎任何自由造型的表面。在光滑的空间表面的情况下,例如抛物线内表面,也可以无需单独镀膜而成为全反射。
为了制造LED(10),在其中例如从下方伸入LED电子部分(1-6)的压铸模内,首先注入第一种流动性好的材料(53)。在压注模内一个孔用作注入地点(51),按图1它位于一个用(51)表示的圆圈作标记的地方。据此,例如将塑料(53)直接在反射槽(5)下方注入。理论上此注入地点(51)可以在电子部分保护体(41)外轮廓的任何地方。在这里此外轮廓主要包括底面(42)和部分圆柱形的外表面(43)。
在此第一个喷注过程中,在模具内正好加入这么多塑料(33),即,使之完全绕流设计为曝露的结构部分的底脚线(2),以及使底脚线(2)离分界缝(61)的最小距离至少为0.5mm。必要时为了明确地确定分界缝(61),可在模具内插入一冲头,在第二个压注或浇铸工艺步骤前它重新拔出或向侧面移动或转动。冲头朝电子部分方向定向的成形面,可尤其为了获得一种规定的光学效果制成某种型面。
一旦构成电子部分保护体(41)的塑料(53)达到粘稠的阶段,这例如只是在注入后的几秒钟时,在分界缝(61)上方的模具剩余体积内注入例如塑料(53)。这例如通过在端面(22)内的注入地点(31)或在辅助光发射面(26)内的注入地点(32)实现,可参见图1。流入的塑料(33)与电子部分保护体(41)尚粘稠的塑料(53)连接,它也可能溶解在已凝固的表面上。在分界缝(61)内的交联或融合是充分的,所以两种塑料(33、53)构成一个均匀体。避免了在由此消失了的分界缝(61)范围的光折射。
与之不同,对于特殊的应用情况,可通过使用例如密度不同的塑料有目的地造成光折射。为此,必要时注入多层不同类型的塑料。
图3和4表示复合LED(70)的纵剖面和俯视图。所示的实施例包括三个电子部分保护体(86-88),以及包括电子部分(1-6)和一个光导体(76)。电子部分保护体(86-88)和光导体(76)例如在一个压注模内按上述方法制造。在压注过程后它们构成一个不可拆的单元。
光导体(76)有一主光发射孔(72),如图1所示它设在芯片(6)对面。在主光发射面(72)上连接四个辅助光发射面(82-85)。
所表示的复合LED(70)例如是一个汽车后侧信号灯,它组合在汽车侧棱(91)的区域内。在复合LED(70)的内部,例如位于电子部分保护体(86)前面的区域是行驶方向指示器,在电子部分保护体(87)前面的区域是刹车信号灯,以及在电子部分保护体(88)前面的区域是倒车灯。在图3和4中表示的辅助光发射面(82)有并列的大灯发射孔的功能。它应向侧向将灯光射出。
为了达到高的造型真实性和轮廓精度可采用压注法。还可以设想,例如主光发射面(22、72)与其透镜和/或散射面分开制造并在事先置入压注模内。这同样适用于辅助光发射面(26,82-85)。
按另一种方案,将单独的光导体(29)置入模具内电子部分(1-6)上面。光导体(29)有例如尚未完成的辅助光发射面,也就是说,它在目前的侧面没有贴靠在模具上。然后,首先铸造或喷注电子部分保护体(41)。在下一个工艺步骤中充填在电子部分保护体(41)与光导体(29)之间以及在光导体(29)与模具之间尚留空的空隙(28)。最后加入的塑料(33)融合光导体(29)与电子部分保护体(41),以获得高的造型精度和与此同时有大的冷却速度。后者尤其由于事先置入大体积冷的光导体(29)造成,光导体在这里只是在一个比较薄的边缘区与新加入的液态塑料(33)接触。
在这里也可以附加地加上一个压注工艺步骤。
附图标记清单
1        接头,阳极,电极
2        底脚线,铝线
4        接头,阴极,电极
5        反射槽
6        芯片
10       发光二极管
21       光导体
22       端面,主光发射面
23       环带透镜
24       散射面
26       外表面,辅助光发射面
         反射面
28       空隙
29       光导体,单独的
31,32   注入地点
33       (21)的材料
41       电子部分保护体
42       底面,区域
43       部分圆柱形的外表面
51       注入地点
53       (41)的材料
61       分界缝
70       复合LED
72       主光发射面
76       光导体
82-85    辅助光发射面
86-88    电子部分保护体
91       汽车和复合LED棱边

Claims (8)

1.用一种在最终凝固前可流动的材料(33、53)在模具内制造光导LED体(10、70)的方法,各个LED体(10、70)包括至少一个发光芯片(6)和至少两个与芯片(6)连接的电接头(1、4),其中
-至少一种可流动的材料(33、53)通过至少两个不同的地点(31、32、51)在时间上相互错开地加入模具内,
-首先在区域(42、43)内绕流芯片(6)和接头(1、4)加入一种可流动的材料(53),以及
-然后在处于芯片和接头区(42、43)之外的区域内加入一种或多种可流动的材料(33、53)
2.按照权利要求1所述的制造光导LED体的方法,其特征为:在加入第一种可流动的材料(53)与加入第二种可流动的材料(33)之间错开的时间短于首先加入的材料(53)的凝固阶段。
3.按照权利要求1所述的制造光导LED体的方法,其特征为:LED体(10)的体积至少有0.3ml。
4.按照权利要求1所述的制造光导LED体的方法,其特征为:在首先加入可流动的材料(53)时,芯片(6)和/或其接头(1、4)被埋入至这样的程度,即,离接着加入的可流动材料(33)的最短的距离至少为0.5mm。
5.按照权利要求1所述的制造光导LED体的方法,其特征为:首先加入可流动的材料(53)在芯片下侧在接头(1、4)之间进行。
6.按照权利要求1所述的制造光导LED体的方法,其特征为:第二种可流动的材料(33)的加入方向与首先加入的材料(53)的加入方向不同。
7.按照权利要求1所述的制造光导LED体的方法,其特征为:至少一种后加入的材料(33)的材料量比首先加入的那种材料的量大至少5倍。
8.按照权利要求1所述的制造光导LED体的方法,其特征为:先后加入的材料(33、53)是一致的。
CN02826058.9A 2001-12-24 2002-12-23 按两个时间上错开的步骤制造光导led体的方法 Pending CN1608324A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10163117A DE10163117C5 (de) 2001-12-24 2001-12-24 Verfahren zum Herstellen von lichtleitenden LED-Körpern in zwei zeitlich getrennten Stufen
DE10163117.0 2001-12-24

Publications (1)

Publication Number Publication Date
CN1608324A true CN1608324A (zh) 2005-04-20

Family

ID=7710271

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02826058.9A Pending CN1608324A (zh) 2001-12-24 2002-12-23 按两个时间上错开的步骤制造光导led体的方法

Country Status (8)

Country Link
US (1) US7267791B2 (zh)
EP (1) EP1461836B1 (zh)
JP (1) JP2005513817A (zh)
KR (1) KR20040093675A (zh)
CN (1) CN1608324A (zh)
AU (1) AU2002361938A1 (zh)
DE (3) DE10163117C5 (zh)
WO (1) WO2003056638A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201501A (zh) * 2010-03-24 2011-09-28 株式会社山武 光学封装体与透镜的接合方法以及光学封装体

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7066628B2 (en) 2001-03-29 2006-06-27 Fiber Optic Designs, Inc. Jacketed LED assemblies and light strings containing same
US20050188569A1 (en) * 2001-11-23 2005-09-01 Derose Anthony Display signs and ornaments for holiday seasons
US7695166B2 (en) * 2001-11-23 2010-04-13 Derose Anthony Shaped LED light bulb
US20080084009A1 (en) * 2005-05-02 2008-04-10 Derose Anthony Method of Making Shaped LED Light Bulb
DE10214566B4 (de) * 2002-04-02 2007-05-24 G.L.I. Global Light Industries Gmbh Homogen paralleles Licht emittierende Leuchtdiode
DE10231326A1 (de) * 2002-07-11 2004-02-19 Hella Kg Hueck & Co. Leuchteinheit für Fahrzeuge
DE10346452A1 (de) 2003-10-03 2005-04-28 Schefenacker Vision Systems Leuchtelement mit Einlegelichtleitkörper
DE10359741A1 (de) * 2003-12-19 2005-07-14 Schefenacker Vision Systems Germany Gmbh & Co. Kg Lichtemittierende Halbleiterdiode mit lichtundurchlässigem Körper
DE102004004779B4 (de) * 2004-01-30 2015-09-03 Osram Opto Semiconductors Gmbh Leuchtdioden-Beleuchtungsmodul mit optischer Einrichtung zur Strahlformung
DE102004014355B4 (de) * 2004-03-24 2010-07-29 Odelo Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements durch Ur- und Umformen
DE102004014354A1 (de) * 2004-03-24 2005-10-13 G.L.I. Global Light Industries Gmbh Optoelektronisches Bauelement mit einer auf seine Abbildung abgestimmten Abstrahlcharakteristik
DE102005061204A1 (de) * 2005-12-21 2007-07-05 Perkinelmer Elcos Gmbh Beleuchtungsvorrichtung, Beleuchtungssteuergerät und Beleuchtungssystem
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
KR100714635B1 (ko) 2006-03-31 2007-05-07 삼성전기주식회사 광추출 효율이 개선된 발광다이오드 패키지 제조방법
US7795632B2 (en) * 2006-06-26 2010-09-14 Osram Sylvania Inc. Light emitting diode with direct view optic
KR100765469B1 (ko) * 2006-07-28 2007-10-09 한국광기술원 광효율 향상을 위한 led 패키지
DE102007020418A1 (de) 2007-04-27 2008-10-30 Hella Kgaa Hueck & Co. Verfahren und Vorrichtung zum Herstellen eines Lichtleitkörpers sowie ein Lichtleitkörper
CN101340784A (zh) * 2007-07-04 2009-01-07 深圳富泰宏精密工业有限公司 电子装置机壳及其制造方法
TWI344226B (en) * 2007-10-29 2011-06-21 Ind Tech Res Inst Method of packaging light emitted diode
US7862220B2 (en) * 2009-03-10 2011-01-04 International Automotive Components Group North America, Inc Integration of light emitting devices and printed electronics into vehicle trim components
DE102009024614A1 (de) 2009-06-12 2010-12-16 Olsa S.P.A. Beleuchtungsvorrichtung für ein Fahrzeug
JP5747422B2 (ja) * 2010-02-01 2015-07-15 ディビーエムレフレックス エンタプライズ インコーポレイテッド 2段階射出成形工程を利用して同じ樹脂層で成形された厚レンズ
US8891171B2 (en) * 2010-02-01 2014-11-18 Dbm Reflex Enterprises Inc. High sag thick lens for use in an illumination apparatus
EP2437581A1 (de) 2010-09-30 2012-04-04 Odelo GmbH Leuchtdiode auf Keramiksubstratbasis
DE102010047002A1 (de) 2010-09-30 2012-04-05 Odelo Gmbh Verfahren zur Herstellung belinster SMD-Leuchtdioden
DE102013106689B4 (de) * 2013-06-26 2022-02-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102015104299A1 (de) 2015-03-23 2016-09-29 International Automotive Components Group Gmbh Innenverkleidungsteil für ein Kraftfahrzeug
DE102015105713A1 (de) * 2015-04-15 2016-10-20 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Leuchtengehäuse
CN105712015B (zh) * 2015-11-18 2018-12-14 尹宏开 城市环保美容设备
EP3684582A1 (en) 2017-09-19 2020-07-29 Lumileds Holding B.V. Light emitting device and manufacturing method thereof
DE102019100794A1 (de) * 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh Laservorrichtung und verfahren zur herstellung einer laservorrichtung
CN212421984U (zh) * 2020-05-07 2021-01-29 赣州和晟精密电子有限公司 发光元件及其加工设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3606475A (en) * 1969-08-06 1971-09-20 Amf Inc Wheel assembly
US3609475A (en) * 1970-05-04 1971-09-28 Hewlett Packard Co Light-emitting diode package with dual-colored plastic encapsulation
FR2127239A5 (zh) * 1971-03-01 1972-10-13 Radiotechnique Compelec
JPS48102585A (zh) * 1972-04-04 1973-12-22
US4032963A (en) * 1974-09-03 1977-06-28 Motorola, Inc. Package and method for a semiconductor radiant energy emitting device
JPS5419660A (en) * 1977-07-15 1979-02-14 Stanley Electric Co Ltd Method of packaging optical semiconductor resin mold
US4152624A (en) * 1978-03-16 1979-05-01 Monsanto Company Molded LED indicator
JPS5623789A (en) * 1979-08-01 1981-03-06 Nec Corp Manufacture of luminescent diode
JPS56165373A (en) 1980-05-23 1981-12-18 Rohm Co Ltd Manufacture of light emitting device
FR2520934B1 (fr) * 1982-01-29 1985-06-07 Radiotechnique Compelec Dispositif semi-conducteur emetteur de lumiere a multicristaux
JPS6469020A (en) * 1987-09-10 1989-03-15 Nissei Plastics Ind Co Method of sealing light-emitting diode with resin
JPH06104491A (ja) * 1992-09-17 1994-04-15 Rohm Co Ltd 発光ダイオードランプ
JPH0730154A (ja) * 1993-07-07 1995-01-31 Omron Corp 光半導体素子及び光半導体チップ組込品
IT1265106B1 (it) * 1993-07-23 1996-10-30 Solari Udine Spa Sistema ottico per diodi emettitori di luce
JPH08335720A (ja) * 1995-06-08 1996-12-17 Nichia Chem Ind Ltd 窒化物半導体発光ダイオード
JPH098357A (ja) * 1995-06-16 1997-01-10 Rohm Co Ltd 発光装置およびその製造方法
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes
JP3173487B2 (ja) * 1998-12-17 2001-06-04 日本電気株式会社 赤外線通信用光送受信モジュール
US6521916B2 (en) * 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
JP2001069020A (ja) * 1999-08-30 2001-03-16 Matsushita Electric Ind Co Ltd ディジタル放送受信機

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201501A (zh) * 2010-03-24 2011-09-28 株式会社山武 光学封装体与透镜的接合方法以及光学封装体

Also Published As

Publication number Publication date
US20050084992A1 (en) 2005-04-21
DE10163117C1 (de) 2003-01-16
AU2002361938A1 (en) 2003-07-15
DE50214678D1 (de) 2010-11-04
WO2003056638A2 (de) 2003-07-10
KR20040093675A (ko) 2004-11-06
WO2003056638A3 (de) 2004-06-03
EP1461836B1 (de) 2010-09-22
US7267791B2 (en) 2007-09-11
DE10296188D2 (de) 2004-12-09
EP1461836A2 (de) 2004-09-29
JP2005513817A (ja) 2005-05-12
DE10163117C5 (de) 2005-12-01

Similar Documents

Publication Publication Date Title
CN1608324A (zh) 按两个时间上错开的步骤制造光导led体的方法
CN101085543B (zh) 发光单元及其制造设备和方法、用于模塑其透镜的设备和其发光器件封装
US12330386B2 (en) Silicone optics
CN1608325A (zh) 按两个在空间和时间上分开的阶段制造光导led体的方法
TWI408835B (zh) 發光二極體晶粒上之上層模製
CN1173414C (zh) 可表面装配的光电子组件及其制造方法
US20060261366A1 (en) Integrated light-emitting device
JP2002368281A (ja) 発光ダイオードの製造方法
CN101467270A (zh) 发光装置
CN105487168A (zh) 区域出光的导光板及其制造方法
CN100410049C (zh) 车辆用灯具及其制造方法
CN104508844A (zh) 用于制造led模块的方法和led模块
JP2936245B2 (ja) Led照明具の製造方法
KR101202169B1 (ko) 다중 몰딩부재를 갖는 발광 다이오드 패키지 제조방법
JPH04329680A (ja) 発光装置
JP7632173B2 (ja) 樹脂封止型電子基板および樹脂封止型電子基板の製造方法
KR20090103473A (ko) 발광 다이오드 패키지 및 그 발광 다이오드 패키지의트랜스퍼 몰딩 방법
TWI422070B (zh) 化合物半導體封裝結構及其製造方法
CN102194965A (zh) 化合物半导体封装结构及其制造方法
CN117580696A (zh) 用于车辆的照明装置以及制造方法和模具
KR20240039870A (ko) 렌즈 제조용 금형장치
CN1276631A (zh) 一种发光二极管单元体制造方法
KR20050050718A (ko) 자동차용 리어 콤비네이션 램프의 렌즈구조
JPH05337983A (ja) 車両用灯具用の複合レンズの成型方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication