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CN1665038A - 360度(体发光)高光效光致发光二极管 - Google Patents

360度(体发光)高光效光致发光二极管 Download PDF

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CN1665038A
CN1665038A CN2004100524874A CN200410052487A CN1665038A CN 1665038 A CN1665038 A CN 1665038A CN 2004100524874 A CN2004100524874 A CN 2004100524874A CN 200410052487 A CN200410052487 A CN 200410052487A CN 1665038 A CN1665038 A CN 1665038A
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陈建伟
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract

本发明提供了一种具有360度(体发光)高光效光致发光二极管，该发明解决了现有光致发光二极管封装技术及封装结构上存在的低光效单向发光的问题，使光致发光二极管，特别是白光发光二极管在照明领域的应用前景更为宽广。它由不带反光杯的发光二极管支架，半导体发光芯片，导线，透明环氧胶，光致发光荧光粉，以及透明粘接胶构成。在该基本结构中，若透明粘接胶的硬度、机械强度、耐磨性以及化学稳定性不够时，可在透明粘接胶所形成的外表面封透明保护材料。

Description

360度(体发光)高光效光致发光二极管
技术领域
本发明涉及一种光电元器件中的高光效光致发光二极管，尤其是一种360度(体发光)高光效光致发光二极管。
背景技术
现有光致发光二极管的基本构成，以白光发光二极管为例，其基本构成为发光二极管支架(2)中反光杯(4)内，固有半导体发光芯片(3)，在反光杯(4)中点入光致发光荧光粉(5)，然后灌封透明环氧胶(1)，从而构成白光发光二极管。目前白光发光二极管采用的混色原理：兰光+黄光＝白光。
现有白光发光二极管，光路传输路径为：在发光二极管支架(2)的管脚上加电压，半导体发光芯片(3)发光(常见发兰光)，该短波长光激发光致发光荧光粉(5)发光(常见为黄光)，这个过程又称为光致发光，所得到的白光为复合光。该白光在透明环氧(1)(介质n1)内传输，经反光杯(4)以及透明环氧胶(1)成型的凸透镜会聚成一束方向性强的白光，该白光具“α立体角”(又称功率角)。(见图1)
从以上举例的白光发光二极管的基本结构，我们可以知道，现有的白光发光二极管存在以下问题：第一.不能实现360度体发光；第二.经过反光杯(4)反射和多次反射后的光，其光能光损失较大；第三.光在透明环氧介质n1与介质n2(空气)介面上传输时，由于介质n1和介质n2的“折射率差”较大，所以白光的出光效率低；第四.介质n1和介质n2界面产生的反射光同样也损失掉。(见图1)
业界为实现360°体发光，在发光二极管的透明环氧胶(1)中加入扩散剂或色料，以期实现360°体发光，但这种方法无疑严重影响发光效率。随着发光二极管，特别是白光发光二极管进入照明市场，因而对白光发光二级管的光效及光传输方式有了更高的要求。而现有的白光发光二极管将受到更多的限制。
发明内容
(一)发明的目的
本发明旨在提供一种具有360度(体发光)高光效光致发光二极管，该发明解决了现有光致发光二极管封装技术及封装结构上存在的低光效单向发光的问题，使光致发光二极管，特别是白光发光二极管在照明领域的应用前景更为宽广。
(二)发明所依据的基本原理
本发明所依据的基本原理：发光二极管芯片本身具有的发光特性为体发光或近似发光；其二.依据光致发光的原理；其三.依据光的混色原理；其四.依据几何光学折射与反射定律。
(三)360度(体发光)高光效光致发光二极管基本构成
本发明依据上述基本原理，发明了“360度(体发光)高光效光致发光二极管”，其基本结构构成如图2。
本发明由不带反光杯的发光二极管支架，半导体发光芯片，导线，透明环氧胶，光致发光荧光粉，以及透明粘接胶构成。在该基本结构中，若透明粘接胶的硬度、机械强度、耐磨性以及化学稳定性不够时，可在透明粘接胶所形成的外表面封透明保护材料。(参见图6)
(四)360度(体发光)高光效光致发光二极管实现过程(见图2)：
在发光二极管支架上固有半导体发光芯片，且两者经过导线完成电路联接。然后用透明环氧胶灌封成型，从而构成“发光二极管”。将透明粘接胶与光致发光荧光粉，按一定比例混合搅拌均匀并脱气后，配制成“荧光粉胶液”。再将“发光二极管”浸入“荧光粉胶液”中，并使“发光二极管”的透明环氧胶的表面完全涂覆(附着)上“荧光粉胶液”。固化后，在透明环氧胶的表面就形成了一层由“透明粘接胶与光致发光荧光粉”所构成的一层“薄膜体”。为保护该“薄膜体”，在其上用透明保护材料固化成保护层(也可以是具形体的保护体)。该保护层(保护体)具有高透光、高硬度机械强度、高耐磨性以及良好的化学稳定性。(参见图6)
(五)本发明的360度(体发光)发光机理：
在发光二极管支架两端加上电压、电流经导线，使半导体发光芯片发光，而半导体发光芯片自身具有体发光或近似体发光的特征，且“薄膜体”完全涂覆在透明环氧胶的外表面上。依据光致发光原理：被半导体发光芯片激发的光致发光荧光粉所发出的光分布在“薄膜体”上，同样属360度体发光。故经空间混合后的复合光，实现了360度体发光。(见图2)
(六)本发明高光效的实现机理：
实现360度(体发光)高光效光致发光二极管高光效，由于去掉了反光杯，从而减少了半导体发光芯片与光致发光荧光粉所发出的光，在反光杯中反射造成的光能损失；另一个原因就是充分利用了透明环氧胶成型后形成的光学腔中半导体发光芯片产生的反射光，使这部分反射光作为能量源参与激发光致发光荧光粉；第三个原因就是在透明环氧胶(介质n1)与“透明粘接胶与光致发光荧光粉”的界面处，形成的介质n3，以透明粘接胶选用材料为“有机硅树脂粘接胶”为例，有机硅树脂的折射率(n3)为1.38～1.39，而透明环氧胶的折射率(n1)为1.45，介质n1与n3的“折射率差”值较小，从而使半导体发光芯片的出光效率提高，相应地增大了激发光致发光荧光粉的光能，因此实现了高光效的目的。
360度(体发光)高光效光致发光二极管适用于由紫光、兰光激发光致发光荧光粉发出复合光，激发光源的光波波长260nm～480nm。
附图说明
下面结合附图及实施例对本发明进一步说明。
图1是现有光致发光二极管示意图；
图2是本实施例示意图；
图3是本实施例方法二第一次浸泡示意图；
图4是本实施例方法二第一次固化后示意图；
图5是本实施例方法二第二次浸泡示意图；
图6是透明保护材料成型方式示意图。
图中：1.透明环氧胶；2.发光二极管支架；3.半导体发光芯片；4.反光杯；5.光致发光荧光粉；6.导线；7.透明保护材料；8.透明粘接胶；9.发光二极管；10.荧光粉胶液；11.薄膜体；12.发光二极管支架。
具体实施方式
参照图2，本实施例由透明环氧胶1、半导体发光芯片3、光致发光荧光粉5、导线6、透明保护材料7、透明粘接胶8、发光二极管支架12组成。
其中由透明环氧胶1、半导体发光芯片3、导线6、发光二极管支架12组成的发光二极管9，该组成工艺属于传统的制造工艺。在实现360度(体发光)高光效光致发光二极管中，关键的实施方法就是“透明粘接胶8与光致发光荧光粉5”在透明环氧胶1表面涂覆并固化成“薄膜体11”。
由于发光二极管制造行业中，在透明环氧胶1成型时，广泛采用“脱模剂”脱模，再加之固化成型后的透明环氧胶1表面光滑，因而增加了“薄膜体11”的形成难度，针对这个问题我们采取了如下措施：
方法一、对透明环氧胶1表面“毛玻璃化处理”：
经“毛玻璃化处理”后的发光二极管9与处理前的光通量值对比后发现，处理后的发光二极管9的光通量下降1.58％，但“毛玻璃化处理”后的发光二极管9采用一次涂覆(如图3)。使涂覆层完全包覆在透明环氧胶1的外表面，固化后，所得到的“薄膜体11”成膜效果好。(本实施例中透明粘接胶8选用有机硅树脂粘接胶)
方法二、对透明环氧胶1表面作两次涂覆：
发光二极管9无需“毛玻璃化处理”，而采取两次涂覆(图3、图4、图5)的方法为：第一次将发光二极管9完全浸入低浓度的“荧光粉胶液”10中，固化后使之形成(图4)效果，由于光致发光荧光粉5在“荧光粉胶液”10中，仍然是以晶体状存在，因而固化后形成的“薄膜体”11的表面也相对粗糙；第二次将具粗糙面的发光二极管9再次浸入浓度较高的“荧光粉胶液”10中(见图5)，然后固化，经两次涂覆后所得到的“薄膜体”11具有较高的光通量，但形成的“薄膜体”11不如方法1均匀。(本实施例中，透明粘接胶8选用有机硅树脂粘接剂)
3、方法三：透明粘接胶8选用光敏光学胶。
光敏光学胶具有环氧树脂的强度高，收缩率小，化学稳定性好的特点，又具有不饱和聚脂树脂的粘度小，浸润性好的工艺性能，在光照射下固化快的特点，采用一次或两次涂覆后形成的“薄膜体”11较易控制，且无需对透明环氧胶的表面采取“毛玻璃化处理”。同样采取涂覆方法，所得到的“薄膜体”11均匀，且成膜性也较理想，但成本较高。
从上述三种形成“薄膜体11”的方法可知，实现“薄膜体11”的工艺方法和选择的材料有多种多样，各具所长。
关于透明保护材料7的成型：
透明保护材料7所用材料，其选择的范围很大，可以用透明环氧胶，也可以用有机硅树脂粘接胶等等，而且它的成型方式也有多种多样，可以形成保护膜，也可以形成保护体(参见图6)。若360度(体发光)高光效光致发光二极管所选用的透明粘接胶8，其硬度、机械强度、耐磨性、化学稳定性足够时，透明保护材料7也可以不要。
本发明与现有光致发光二极管比较
以下光致发光二极管选用白光发光二极管作对比：工作电流If＝20mA，工作电压Vf＝3.2～3.35伏。
一)光发散角度(半功率角)
    对比项目 不加扩散剂 加扩散剂
    现有白光发光二极管 ≤120° ≤360°
360度(体发光)高光效光致发光二极管   ≤360°
二)光效
对比项目 光效 备注
现有白光发光二极管 ≤35流明/瓦 所有芯片均采用波长460-465nm，光强40-50mw，φ5mm封装
360度(体发光)高光效光致发光二极管 ≥48流明/瓦
注：1、我们用波长为460-465nm，兰光ITO芯片，光强为90-100mcd，制成φ5mm，360度(体发光)高光效光致发光二极管(白光)，所得到的光效达至77流明/瓦。
2、本发明提供的光参数数据，均由中国计量学院光电子研究所生产的：JF-II型LED光电参数测试仪以及φ90mm积分球测得。

Claims (5)

1.360度(体发光)高光效光致发光二极管，其特征在于：它由透明环氧胶(1)、半导体发光芯片(3)、光致发光荧光粉(5)、导线(6)、透明粘接胶(8)、发光二极管支架(12)组成，透明环氧胶(1)外表面涂覆有由透明粘接胶(8)与光致发光荧光粉(5)形成的薄膜体(11)。
2.根据权利要求1所述的360度(体发光)高光效光致发光二极管，其特征在于：半导体发光芯片(3)适用于光波波长为260nm-480nm的紫光、兰光半导体发光芯片。
3.根据权利要求1所述的360度(体发光)高光效光致发光二极管，其特征在于：适用于以半导体发光芯片为激发能量源激发光致发光荧光粉所形成的复合光。
4.根据权利要求1所述的360度(体发光)高光效光致发光二极管，其特征在于：透明环氧胶(1)的表面“毛玻璃化处理”。
5.根据权利要求1所述的360度(体发光)高光效光致发光二极管，其特征在于：薄膜体(11)的外表面涂覆透明保护材料(7)。
CN2004100524874A 2004-12-03 2004-12-03 360度(体发光)高光效光致发光二极管 Pending CN1665038A (zh)

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PCT/CN2005/001184 WO2006058473A1 (en) 2004-12-03 2005-08-03 The light emitting diode of high luminous efficiency of 360 degree (body luminescence)

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