CN1665038A - 360 degree high photosynthetic capacity photoluminescent diode - Google Patents
360 degree high photosynthetic capacity photoluminescent diode Download PDFInfo
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Abstract
本发明提供了一种具有360度(体发光)高光效光致发光二极管，该发明解决了现有光致发光二极管封装技术及封装结构上存在的低光效单向发光的问题，使光致发光二极管，特别是白光发光二极管在照明领域的应用前景更为宽广。它由不带反光杯的发光二极管支架，半导体发光芯片，导线，透明环氧胶，光致发光荧光粉，以及透明粘接胶构成。在该基本结构中，若透明粘接胶的硬度、机械强度、耐磨性以及化学稳定性不够时，可在透明粘接胶所形成的外表面封透明保护材料。
The invention provides a photoluminescent diode with 360-degree (volume emission) high light efficiency. Light-emitting diodes, especially white light-emitting diodes, have a broader application prospect in the lighting field. It consists of a light-emitting diode bracket without a reflector, a semiconductor light-emitting chip, a wire, transparent epoxy glue, photoluminescence phosphor, and transparent adhesive glue. In this basic structure, if the hardness, mechanical strength, wear resistance and chemical stability of the transparent adhesive are not enough, a transparent protective material can be sealed on the outer surface formed by the transparent adhesive.
Description
技术领域technical field
本发明涉及一种光电元器件中的高光效光致发光二极管，尤其是一种360度(体发光)高光效光致发光二极管。The invention relates to a photoluminescence diode with high light efficiency in photoelectric components, in particular to a photoluminescence diode with 360 degrees (volume emission) and high light efficiency.
背景技术Background technique
现有光致发光二极管的基本构成，以白光发光二极管为例，其基本构成为发光二极管支架(2)中反光杯(4)内，固有半导体发光芯片(3)，在反光杯(4)中点入光致发光荧光粉(5)，然后灌封透明环氧胶(1)，从而构成白光发光二极管。目前白光发光二极管采用的混色原理：兰光+黄光＝白光。The basic composition of existing photoluminescent diodes, taking white light-emitting diodes as an example, its basic composition is that in the reflective cup (4) in the light-emitting diode bracket (2), the inherent semiconductor light-emitting chip (3) is placed in the reflective cup (4). The photoluminescent phosphor (5) is injected, and then the transparent epoxy glue (1) is potted to form a white light emitting diode. At present, the color mixing principle adopted by white light-emitting diodes is: blue light + yellow light = white light.
现有白光发光二极管，光路传输路径为：在发光二极管支架(2)的管脚上加电压，半导体发光芯片(3)发光(常见发兰光)，该短波长光激发光致发光荧光粉(5)发光(常见为黄光)，这个过程又称为光致发光，所得到的白光为复合光。该白光在透明环氧(1)(介质n1)内传输，经反光杯(4)以及透明环氧胶(1)成型的凸透镜会聚成一束方向性强的白光，该白光具“α立体角”(又称功率角)。(见图1)In the existing white light-emitting diode, the light transmission path is as follows: voltage is applied to the pins of the light-emitting diode support (2), the semiconductor light-emitting chip (3) emits light (commonly emits blue light), and the short-wavelength light excites the photoluminescence phosphor ( 5) Luminescence (commonly yellow light), this process is also called photoluminescence, and the resulting white light is composite light. The white light is transmitted in the transparent epoxy (1) (medium n1), and the convex lens formed by the reflective cup (4) and the transparent epoxy glue (1) converges into a beam of white light with strong directionality. The white light has "α solid angle" (also known as power angle). (see picture 1)
从以上举例的白光发光二极管的基本结构，我们可以知道，现有的白光发光二极管存在以下问题：第一.不能实现360度体发光；第二.经过反光杯(4)反射和多次反射后的光，其光能光损失较大；第三.光在透明环氧介质n1与介质n2(空气)介面上传输时，由于介质n1和介质n2的“折射率差”较大，所以白光的出光效率低；第四.介质n1和介质n2界面产生的反射光同样也损失掉。(见图1)From the basic structure of the white light emitting diode exemplified above, we can know that the existing white light emitting diode has the following problems: first, it cannot realize 360-degree body light emission; second, after reflection by the reflector (4) and
业界为实现360°体发光，在发光二极管的透明环氧胶(1)中加入扩散剂或色料，以期实现360°体发光，但这种方法无疑严重影响发光效率。随着发光二极管，特别是白光发光二极管进入照明市场，因而对白光发光二级管的光效及光传输方式有了更高的要求。而现有的白光发光二极管将受到更多的限制。In order to achieve 360° volume luminescence, the industry adds a diffusing agent or colorant to the transparent epoxy glue (1) of the light-emitting diode in order to achieve 360° volume luminescence, but this method undoubtedly seriously affects the luminous efficiency. As light-emitting diodes, especially white light-emitting diodes, enter the lighting market, there are higher requirements for the light efficiency and light transmission mode of white light-emitting diodes. The existing white light-emitting diodes will be subject to more restrictions.
发明内容Contents of the invention
(一)发明的目的(1) Purpose of the invention
本发明旨在提供一种具有360度(体发光)高光效光致发光二极管，该发明解决了现有光致发光二极管封装技术及封装结构上存在的低光效单向发光的问题，使光致发光二极管，特别是白光发光二极管在照明领域的应用前景更为宽广。The purpose of the present invention is to provide a photoluminescent diode with 360-degree (volume emission) high light efficiency. Light-emitting diodes, especially white light-emitting diodes, have a broader application prospect in the field of lighting.
(二)发明所依据的基本原理(2) The basic principle on which the invention is based
本发明所依据的基本原理：发光二极管芯片本身具有的发光特性为体发光或近似发光；其二.依据光致发光的原理；其三.依据光的混色原理；其四.依据几何光学折射与反射定律。The basic principle on which the present invention is based: the light-emitting characteristic of the light-emitting diode chip itself is volume luminescence or approximate luminescence; second, based on the principle of photoluminescence; third, based on the principle of color mixing of light; fourth, based on geometrical optics refraction and Law of reflection.
(三)360度(体发光)高光效光致发光二极管基本构成(3) Basic composition of 360-degree (bulk-emitting) high-efficiency photoluminescent diodes
本发明依据上述基本原理，发明了“360度(体发光)高光效光致发光二极管”，其基本结构构成如图2。Based on the above basic principles, the present invention has invented a "360-degree (volume emission) high-efficiency photoluminescent diode", the basic structure of which is shown in Figure 2.
本发明由不带反光杯的发光二极管支架，半导体发光芯片，导线，透明环氧胶，光致发光荧光粉，以及透明粘接胶构成。在该基本结构中，若透明粘接胶的硬度、机械强度、耐磨性以及化学稳定性不够时，可在透明粘接胶所形成的外表面封透明保护材料。(参见图6)The invention is composed of a light-emitting diode bracket without a reflective cup, a semiconductor light-emitting chip, a wire, transparent epoxy glue, photoluminescent phosphor powder, and transparent adhesive glue. In this basic structure, if the hardness, mechanical strength, wear resistance and chemical stability of the transparent adhesive are not enough, a transparent protective material can be sealed on the outer surface formed by the transparent adhesive. (See Figure 6)
(四)360度(体发光)高光效光致发光二极管实现过程(见图2)：(4) Realization process of 360-degree (volume emission) high-efficiency photoluminescent diode (see Figure 2):
在发光二极管支架上固有半导体发光芯片，且两者经过导线完成电路联接。然后用透明环氧胶灌封成型，从而构成“发光二极管”。将透明粘接胶与光致发光荧光粉，按一定比例混合搅拌均匀并脱气后，配制成“荧光粉胶液”。再将“发光二极管”浸入“荧光粉胶液”中，并使“发光二极管”的透明环氧胶的表面完全涂覆(附着)上“荧光粉胶液”。固化后，在透明环氧胶的表面就形成了一层由“透明粘接胶与光致发光荧光粉”所构成的一层“薄膜体”。为保护该“薄膜体”，在其上用透明保护材料固化成保护层(也可以是具形体的保护体)。该保护层(保护体)具有高透光、高硬度机械强度、高耐磨性以及良好的化学稳定性。(参见图6)There is inherent semiconductor light emitting chip on the light emitting diode support, and the two complete the circuit connection through the wire. Then it is potted and molded with transparent epoxy glue to form a "light emitting diode". The transparent adhesive and photoluminescent phosphor are mixed and stirred evenly in a certain proportion and degassed to prepare a "phosphor glue". Then immerse the "light-emitting diode" in the "phosphor powder glue", and make the surface of the transparent epoxy glue of the "light-emitting diode" completely coated (adhered) on the "phosphor powder glue". After curing, a layer of "film body" composed of "transparent adhesive glue and photoluminescence phosphor" is formed on the surface of the transparent epoxy glue. In order to protect this "film body", a protective layer (also a protective body with a specific shape) is solidified on it with a transparent protective material. The protective layer (protector) has high light transmission, high hardness mechanical strength, high wear resistance and good chemical stability. (See Figure 6)
(五)本发明的360度(体发光)发光机理：(5) 360-degree (bulk luminescence) light-emitting mechanism of the present invention:
在发光二极管支架两端加上电压、电流经导线，使半导体发光芯片发光，而半导体发光芯片自身具有体发光或近似体发光的特征，且“薄膜体”完全涂覆在透明环氧胶的外表面上。依据光致发光原理：被半导体发光芯片激发的光致发光荧光粉所发出的光分布在“薄膜体”上，同样属360度体发光。故经空间混合后的复合光，实现了360度体发光。(见图2)Apply voltage and current to both ends of the light-emitting diode bracket through the wires to make the semiconductor light-emitting chip emit light, and the semiconductor light-emitting chip itself has the characteristics of volume light emission or approximate volume light emission, and the "film body" is completely coated on the outside of the transparent epoxy glue. On the surface. According to the principle of photoluminescence: the light emitted by the photoluminescent phosphor excited by the semiconductor light-emitting chip is distributed on the "film body", which is also a 360-degree volume luminescence. Therefore, the composite light after space mixing realizes 360-degree volume luminescence. (See Figure 2)
(六)本发明高光效的实现机理：(6) The realization mechanism of high light efficiency of the present invention:
实现360度(体发光)高光效光致发光二极管高光效，由于去掉了反光杯，从而减少了半导体发光芯片与光致发光荧光粉所发出的光，在反光杯中反射造成的光能损失；另一个原因就是充分利用了透明环氧胶成型后形成的光学腔中半导体发光芯片产生的反射光，使这部分反射光作为能量源参与激发光致发光荧光粉；第三个原因就是在透明环氧胶(介质n1)与“透明粘接胶与光致发光荧光粉”的界面处，形成的介质n3，以透明粘接胶选用材料为“有机硅树脂粘接胶”为例，有机硅树脂的折射率(n3)为1.38～1.39，而透明环氧胶的折射率(n1)为1.45，介质n1与n3的“折射率差”值较小，从而使半导体发光芯片的出光效率提高，相应地增大了激发光致发光荧光粉的光能，因此实现了高光效的目的。Realize 360-degree (volume emission) high light efficiency photoluminescent diode and high light efficiency. Because the reflector cup is removed, the light energy loss caused by the reflection of the light emitted by the semiconductor light-emitting chip and photoluminescence phosphor in the reflector cup is reduced; Another reason is to make full use of the reflected light generated by the semiconductor light-emitting chip in the optical cavity formed by the transparent epoxy glue, so that this part of the reflected light can be used as an energy source to participate in exciting the photoluminescence phosphor; the third reason is that in the transparent ring At the interface between oxygen glue (medium n1) and “transparent adhesive glue and photoluminescent phosphor powder”, medium n3 is formed. Take the material of transparent adhesive glue as “organic silicon resin adhesive glue” as an example. Silicone resin The refractive index (n3) of the transparent epoxy glue is 1.38~1.39, while the refractive index (n1) of the transparent epoxy glue is 1.45, and the "refractive index difference" value of the medium n1 and n3 is small, so that the light-emitting efficiency of the semiconductor light-emitting chip is improved, and the corresponding The light energy that excites the photoluminescent phosphor is greatly increased, so the purpose of high light efficiency is achieved.
360度(体发光)高光效光致发光二极管适用于由紫光、兰光激发光致发光荧光粉发出复合光，激发光源的光波波长260nm～480nm。360-degree (volume luminescent) high-efficiency photoluminescent diodes are suitable for emitting composite light from photoluminescent phosphors excited by purple light and blue light, and the light wavelength of the excitation light source is 260nm to 480nm.
附图说明Description of drawings
下面结合附图及实施例对本发明进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
图1是现有光致发光二极管示意图；1 is a schematic diagram of an existing photoluminescent diode;
图2是本实施例示意图；Fig. 2 is a schematic diagram of the present embodiment;
图3是本实施例方法二第一次浸泡示意图；Fig. 3 is the schematic diagram of soaking for the first time in method two of the present embodiment;
图4是本实施例方法二第一次固化后示意图；Fig. 4 is the schematic diagram after curing for the first time in method two of the present embodiment;
图5是本实施例方法二第二次浸泡示意图；Fig. 5 is the second soaking schematic diagram of the present embodiment method two;
图6是透明保护材料成型方式示意图。Fig. 6 is a schematic diagram of the molding method of the transparent protective material.
图中：1.透明环氧胶；2.发光二极管支架；3.半导体发光芯片；4.反光杯；5.光致发光荧光粉；6.导线；7.透明保护材料；8.透明粘接胶；9.发光二极管；10.荧光粉胶液；11.薄膜体；12.发光二极管支架。In the figure: 1. Transparent epoxy glue; 2. LED bracket; 3. Semiconductor light-emitting chip; 4. Reflective cup; 5. Photoluminescence phosphor; 6. Wire; 7. Transparent protective material; 8. Transparent bonding Glue; 9. Light-emitting diode; 10. Phosphor powder glue; 11. Film body; 12. Light-emitting diode bracket.
具体实施方式Detailed ways
参照图2，本实施例由透明环氧胶1、半导体发光芯片3、光致发光荧光粉5、导线6、透明保护材料7、透明粘接胶8、发光二极管支架12组成。Referring to FIG. 2 , this embodiment consists of transparent epoxy glue 1 , semiconductor light-emitting
其中由透明环氧胶1、半导体发光芯片3、导线6、发光二极管支架12组成的发光二极管9，该组成工艺属于传统的制造工艺。在实现360度(体发光)高光效光致发光二极管中，关键的实施方法就是“透明粘接胶8与光致发光荧光粉5”在透明环氧胶1表面涂覆并固化成“薄膜体11”。Wherein the
由于发光二极管制造行业中，在透明环氧胶1成型时，广泛采用“脱模剂”脱模，再加之固化成型后的透明环氧胶1表面光滑，因而增加了“薄膜体11”的形成难度，针对这个问题我们采取了如下措施：In the light-emitting diode manufacturing industry, when the transparent epoxy glue 1 is formed, a "release agent" is widely used to release the mold, and the surface of the transparent epoxy glue 1 after curing is smooth, thus increasing the formation of the "film body 11" To solve this problem, we have taken the following measures:
方法一、对透明环氧胶1表面“毛玻璃化处理”：Method 1. "Gross glass treatment" on the surface of transparent epoxy glue 1:
经“毛玻璃化处理”后的发光二极管9与处理前的光通量值对比后发现，处理后的发光二极管9的光通量下降1.58％，但“毛玻璃化处理”后的发光二极管9采用一次涂覆(如图3)。使涂覆层完全包覆在透明环氧胶1的外表面，固化后，所得到的“薄膜体11”成膜效果好。(本实施例中透明粘接胶8选用有机硅树脂粘接胶)After comparing the light-emitting
方法二、对透明环氧胶1表面作两次涂覆：
发光二极管9无需“毛玻璃化处理”，而采取两次涂覆(图3、图4、图5)的方法为：第一次将发光二极管9完全浸入低浓度的“荧光粉胶液”10中，固化后使之形成(图4)效果，由于光致发光荧光粉5在“荧光粉胶液”10中，仍然是以晶体状存在，因而固化后形成的“薄膜体”11的表面也相对粗糙；第二次将具粗糙面的发光二极管9再次浸入浓度较高的“荧光粉胶液”10中(见图5)，然后固化，经两次涂覆后所得到的“薄膜体”11具有较高的光通量，但形成的“薄膜体”11不如方法1均匀。(本实施例中，透明粘接胶8选用有机硅树脂粘接剂)The light-emitting
3、方法三：透明粘接胶8选用光敏光学胶。3. Method 3: Use photosensitive optical glue for transparent adhesive 8.
光敏光学胶具有环氧树脂的强度高，收缩率小，化学稳定性好的特点，又具有不饱和聚脂树脂的粘度小，浸润性好的工艺性能，在光照射下固化快的特点，采用一次或两次涂覆后形成的“薄膜体”11较易控制，且无需对透明环氧胶的表面采取“毛玻璃化处理”。同样采取涂覆方法，所得到的“薄膜体”11均匀，且成膜性也较理想，但成本较高。Photosensitive optical adhesive has the characteristics of high strength, low shrinkage and good chemical stability of epoxy resin, low viscosity of unsaturated polyester resin, good process performance of wettability, and fast curing under light irradiation. The "film body" 11 formed after one or two coatings is easier to control, and there is no need to take "frosting treatment" on the surface of the transparent epoxy adhesive. Also adopting the coating method, the obtained "thin film body" 11 is uniform, and the film-forming property is also relatively ideal, but the cost is relatively high.
从上述三种形成“薄膜体11”的方法可知，实现“薄膜体11”的工艺方法和选择的材料有多种多样，各具所长。From the above three methods of forming the "thin film body 11", it can be known that there are various techniques and materials for realizing the "thin film body 11", each with its own advantages.
关于透明保护材料7的成型：Regarding the molding of the transparent protective material 7:
透明保护材料7所用材料，其选择的范围很大，可以用透明环氧胶，也可以用有机硅树脂粘接胶等等，而且它的成型方式也有多种多样，可以形成保护膜，也可以形成保护体(参见图6)。若360度(体发光)高光效光致发光二极管所选用的透明粘接胶8，其硬度、机械强度、耐磨性、化学稳定性足够时，透明保护材料7也可以不要。The material used for the transparent protective material 7 has a wide range of choices, such as transparent epoxy glue, silicone resin adhesive, etc., and its molding methods are also various, which can form a protective film or A protective body is formed (see Figure 6). If the transparent adhesive 8 selected for the 360-degree (bulk luminous) high-efficiency photoluminescent diode has sufficient hardness, mechanical strength, wear resistance, and chemical stability, the transparent protective material 7 can also be omitted.
本发明与现有光致发光二极管比较The present invention compares with existing photoluminescence diode
以下光致发光二极管选用白光发光二极管作对比：工作电流If＝20mA，工作电压Vf＝3.2～3.35伏。The following photoluminescent diodes were selected as white light-emitting diodes for comparison: operating current If=20mA, operating voltage Vf=3.2-3.35 volts.
一)光发散角度(半功率角)1) Light divergence angle (half power angle)
二)光效2) Light effect
注：1、我们用波长为460-465nm，兰光ITO芯片，光强为90-100mcd，制成φ5mm，360度(体发光)高光效光致发光二极管(白光)，所得到的光效达至77流明/瓦。Note: 1. We use Bluelight ITO chips with a wavelength of 460-465nm and a light intensity of 90-100mcd to make a φ5mm, 360-degree (volume luminous) high-efficiency photoluminescent diode (white light), and the obtained light efficiency reaches to 77 lumens/watt.
2、本发明提供的光参数数据，均由中国计量学院光电子研究所生产的：JF-II型LED光电参数测试仪以及φ90mm积分球测得。2. The optical parameter data provided by the present invention are all produced by the Institute of Optoelectronics, China Metrology Institute: JF-II LED photoelectric parameter tester and φ90mm integrating sphere.
Claims (5)
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| CN2004100524874A CN1665038A (en) | 2004-12-03 | 2004-12-03 | 360 degree high photosynthetic capacity photoluminescent diode |
| PCT/CN2005/001184 WO2006058473A1 (en) | 2004-12-03 | 2005-08-03 | The light emitting diode of high luminous efficiency of 360 degree (body luminescence) |
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| CN2004100524874A CN1665038A (en) | 2004-12-03 | 2004-12-03 | 360 degree high photosynthetic capacity photoluminescent diode |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101691912A (en) * | 2009-09-14 | 2010-04-07 | 重庆耀辉电工电器有限责任公司 | Three-dimensional luminous LED light source and packaging method |
| US7872273B2 (en) | 2008-03-28 | 2011-01-18 | Industrial Technology Research Institute | Light emitting device |
| CN101551077B (en) * | 2008-04-03 | 2011-11-30 | 财团法人工业技术研究院 | Light-emitting device, backlight device using the same, and assembly method thereof |
| CN101432895B (en) * | 2006-04-24 | 2012-09-05 | 克利公司 | Side View Surface Mount White LED |
| CN102664229A (en) * | 2012-06-05 | 2012-09-12 | 泉州万明光电有限公司 | Light emitting diode light source structure |
| US8994045B2 (en) | 2006-10-12 | 2015-03-31 | Cree, Inc. | Lighting device having luminescent material between a reflective cup and a solid state light emitter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5962971A (en) * | 1997-08-29 | 1999-10-05 | Chen; Hsing | LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights |
| US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
| JP2907286B1 (en) * | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | Resin-sealed semiconductor light emitting device having fluorescent cover |
| JP3564330B2 (en) * | 1999-07-19 | 2004-09-08 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP2002232012A (en) * | 2001-02-02 | 2002-08-16 | Rohm Co Ltd | Semiconductor light emitting device |
-
2004
- 2004-12-03 CN CN2004100524874A patent/CN1665038A/en active Pending
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101432895B (en) * | 2006-04-24 | 2012-09-05 | 克利公司 | Side View Surface Mount White LED |
| US8994045B2 (en) | 2006-10-12 | 2015-03-31 | Cree, Inc. | Lighting device having luminescent material between a reflective cup and a solid state light emitter |
| CN101558501B (en) * | 2006-10-12 | 2015-04-22 | 科锐公司 | Lighting device and method of making same |
| US7872273B2 (en) | 2008-03-28 | 2011-01-18 | Industrial Technology Research Institute | Light emitting device |
| US8227827B2 (en) | 2008-03-28 | 2012-07-24 | Industrial Technology Research Institute | Light emitting device |
| CN101551077B (en) * | 2008-04-03 | 2011-11-30 | 财团法人工业技术研究院 | Light-emitting device, backlight device using the same, and assembly method thereof |
| CN101691912A (en) * | 2009-09-14 | 2010-04-07 | 重庆耀辉电工电器有限责任公司 | Three-dimensional luminous LED light source and packaging method |
| CN102664229A (en) * | 2012-06-05 | 2012-09-12 | 泉州万明光电有限公司 | Light emitting diode light source structure |
| CN102664229B (en) * | 2012-06-05 | 2015-04-08 | 泉州万明光电有限公司 | Light emitting diode light source structure |
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