CN113437636B - Bonding method of gold wire in semiconductor laser tube shell and semiconductor laser - Google Patents
Bonding method of gold wire in semiconductor laser tube shell and semiconductor laser Download PDFInfo
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- CN113437636B CN113437636B CN202110652169.5A CN202110652169A CN113437636B CN 113437636 B CN113437636 B CN 113437636B CN 202110652169 A CN202110652169 A CN 202110652169A CN 113437636 B CN113437636 B CN 113437636B
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000003466 welding Methods 0.000 claims abstract description 42
- 239000010931 gold Substances 0.000 claims abstract description 28
- 229910052737 gold Inorganic materials 0.000 claims abstract description 28
- 238000010330 laser marking Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 11
- 230000000704 physical effect Effects 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 238000007689 inspection Methods 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a bonding method of gold wires in a semiconductor laser tube shell and a semiconductor laser, wherein the bonding method comprises the following steps: marking at a position of a semiconductor laser tube shell, which is required to be pasted with electrodes, by using a laser marking machine, respectively pasting and fixing at least two electrodes at marking positions in the semiconductor laser tube shell, wherein a height difference exists between the two electrodes to be connected; step 2, one end of the gold wire is welded on the lower electrode of the two electrodes to be connected; step 3, welding the other end of the gold wire on the higher electrode of the two electrodes to be connected; and 4, completing connection among the electrodes, and realizing serial connection of the electrodes and the laser chips in the semiconductor laser tube shell. The bonding method improves the bonding speed and accuracy of gold wires, improves the bonding automation level and ensures the quality of finished products of semiconductor lasers.
Description
Technical Field
The invention belongs to the technical field of semiconductor laser manufacturing, and particularly relates to a bonding method of gold wires in a semiconductor laser tube shell and a semiconductor laser.
Background
Each laser chip in the semiconductor laser is distributed in an array in the tube shell, and the laser chips are mutually connected in series. In the serial connection circuit, in order to obtain a more stable connection structure, electrode strips are arranged between the chip rows and at the end parts of the chip rows according to requirements, and gold wire bonding connection is adopted between the electrode strips.
In the prior art, a wire is bonded in a manual bonding mode, wherein an automatic bonding machine is adopted to wire across arcs between two electrode planes with the same height, and the welding action between two planes without height drop is completed. In the process, an operator is required to bond gold wires one by one in a visual way, the production period is long, and the efficiency is low; the speed and quality of manual bonding depend entirely on the experience of the staff; moreover, because a thin gold wire and a welding spot are observed in a microscope, judgment errors often occur, and gold wire bonding is inaccurate; the equipment camera has no automatic focusing function and can not observe the tube core better; because the automatic bonding machine is a machine operation, the bonding plane mounting consistency is required, and if one bonding plane mounting is not in place, the gold wire bonding is unstable, and the welding spot is not firm and other anomalies are caused.
Disclosure of Invention
In view of the above, the present invention discloses a method for bonding gold wires in a semiconductor laser package and a semiconductor laser, so as to overcome or at least partially solve the above-mentioned problems.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the invention provides a bonding method of gold wires in a semiconductor laser tube shell, which comprises the following steps:
marking at a position of a semiconductor laser tube shell, which is required to be pasted with electrodes, by using a laser marking machine, respectively pasting and fixing at least two electrodes at marking positions in the semiconductor laser tube shell, wherein a height difference exists between the two electrodes to be connected;
step 2, one end of the gold wire is welded on the lower electrode of the two electrodes to be connected;
and 4, completing connection between the electrodes and realizing serial connection of the electrodes and laser chips in the semiconductor laser tube shell.
Optionally, a positioning groove is preset at the marking position on the semiconductor laser tube shell.
Optionally, the positioning groove is formed when the semiconductor laser tube shell is processed and molded.
Optionally, the step 2 forms a first welding spot, and the step 3 forms a second welding spot;
and step 3, planting a first solder ball on the second welding spot, and cutting off the gold wire.
Optionally, before step 1, the bonding method further includes:
testing and selecting technological parameters of gold wire welding in an experimental mode in advance;
determining and presetting optimal technological parameters of equipment for welding gold wires according to physical property tests;
the process parameters include any one or more of the following: contact power, contact pressure, contact time, bonding power, or bonding pressure;
physical property testing includes any one or more of the following: appearance observation, tension, thrust, cold and hot impact, high pressure poaching, and appearance observation, tension or thrust after cold and hot impact and high pressure poaching.
Optionally, the bonding power of the first welding spot and the second welding spot is 25-45%, and the bonding pressure is 80-100g.
Optionally, the diameter of the gold wire is 50 μm, the bonding power of the first welding spot is 35%, and the bonding pressure is 100g; the bonding power of the second welding spot is 30%, and the bonding pressure is 100g.
Optionally, after the step 4, the bonding method further includes:
and (5) performing physical property inspection and reflector coupling inspection on the bonded gold wires, and judging whether the gold wires are qualified or not.
Optionally, the electrode is an electrode strip or an electrode tube, and a gold plating layer is arranged on the surface of the electrode strip or the electrode tube; the laser chip comprises two rows which are mutually parallel, the number of the electrode strips or the electrode tubes is three, two of the electrode strips or the electrode tubes are arranged in parallel with the laser chip of the two rows, and the other electrode strip or the electrode tubes are arranged at the end part of the semiconductor laser tube shell.
In another aspect, the present invention provides a semiconductor laser, in which a package of the semiconductor laser is provided with a plurality of laser chips and at least two electrodes, and the electrodes are connected by using any bonding method described above.
The invention has the advantages and beneficial effects that:
the bonding scheme adopts an automatic gold wire bonding process, and solves the problems of longer production period and lower efficiency of the traditional manual operation; the method can reduce the labor capacity of staff, is easy to operate and master quickly, improves the manual bonding speed, and avoids the disadvantage that the quality is completely dependent on the experience of the staff; because the positions of the electrodes are fixed in advance, the produced products have good consistency, and the deviation of manual judgment is avoided; through the camera adjustment of an automatic gold wire bonding machine, two planes with height difference can be seen clearly in the fixed focal length of the camera, and bonding is completed; the consistency of bonding plane mounting and pasting is fixed through laser marking, and the anomalies such as unstable gold wire bonding, unstable welding spots and the like are avoided; gold wire bonding between two bonding planes with height difference can be realized through optimization of process parameters; the radian of the bonded gold wire can support the gold wire from collapsing, so that the product quality is ensured; the gold thread bonding push-pull force meets the requirement and can be used as a substitute for other materials; this scheme can be applied to any product of gold wire bonding with a level difference bonding plane.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a flow chart of a method for bonding gold wires in a semiconductor laser package according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a semiconductor laser package according to one embodiment of the present invention;
FIG. 3 is a physical diagram of a semiconductor laser package bonded with gold wires in accordance with one embodiment of the present invention;
in the figure: a is a first welding spot, B is a second welding spot, and C is a positioning groove or point location mark; 1 is a first electrode strip, 2 is a second electrode strip, 3 is a third electrode strip, and 4 is a gold wire.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be understood that the terms "comprises/comprising," "consists of … …," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a product, apparatus, process, or method that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such product, apparatus, process, or method as desired. Without further limitation, an element defined by the phrases "comprising/including … …," "consisting of … …," and the like, does not exclude the presence of other like elements in a product, apparatus, process, or method that includes the element.
It is further understood that the terms "upper," "lower," "front," "rear," "left," "right," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship based on that shown in the drawings, merely to facilitate describing the present invention and to simplify the description, and do not indicate or imply that the devices, components, or structures referred to must have a particular orientation, be configured or operated in a particular orientation, and are not to be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The following describes in detail the technical solutions provided by the embodiments of the present invention with reference to the accompanying drawings.
Example 1
Referring to fig. 1, embodiment 1 discloses a bonding method of gold wires in a semiconductor laser package, the bonding method comprising the steps of:
marking at a position of a semiconductor laser tube shell, which is required to be pasted with electrodes, by using a laser marking machine, respectively pasting and fixing at least two electrodes at marking positions in the semiconductor laser tube shell, wherein a height difference exists between the two electrodes to be connected; the electrodes comprise original positive and negative electrodes on the semiconductor laser tube shell, electrode strips or electrode tubes which are required to be arranged for connecting the laser chips in each row, electrodes on the semiconductor laser chips and the like.
Step 2, one end of the gold wire is welded on the lower electrode of the two electrodes to be connected; the number of gold wires required between the electrodes is generally the same, and the specific number is designed and selected according to factors such as the power of a semiconductor laser, the diameter of the gold wires and the like.
And 3, welding the other end of the gold wire on the higher electrode of the two electrodes to be connected.
The gold wires between the two electrodes are connected, so that the welding between the two electrodes can be finished one by one, or one end of all the gold wires is welded to the lower electrode first, and then the other end of all the gold wires is welded to the higher electrode respectively.
And 4, completing connection between the electrodes in sequence, so as to finally realize serial connection of the electrodes and the laser chips in the semiconductor laser tube shell, wherein the final bonded product is shown in fig. 3.
In sum, through the design of the bonding process method, the speed and the accuracy of gold wire bonding are improved, the automation level of bonding is improved, and the quality of a semiconductor laser finished product is ensured.
In an alternative embodiment, instead of laser marking, a positioning slot may be provided at the marking location instead of marking.
The positioning accuracy of the electrode in the tube shell can be improved no matter the positioning groove or the laser marking is carried out, and the quality of the semiconductor laser product is ensured.
Specifically, the positioning groove is formed during the processing and molding of the semiconductor laser tube shell, for example, the positioning groove is designed by a molding die.
In a specific embodiment, step 2 forms a first welding spot A, and step 3 forms a second welding spot B;
and step 3, planting a first solder ball on the second welding spot B, and cutting off the gold wire.
In a specific embodiment, before step 1, the bonding method further includes:
testing and selecting technological parameters of gold wire welding in an experimental mode in advance;
determining and presetting optimal technological parameters of equipment for welding gold wires according to physical property tests;
the process parameters include any one or more of the following: contact power, contact pressure, contact time, bonding power, or bonding pressure;
physical property testing includes any one or more of the following: appearance observation, tension, thrust, cold and hot impact, high pressure poaching, and appearance observation, tension or thrust after cold and hot impact and high pressure poaching.
Before the experiment, the following experimental conditions were set respectively:
a first welding point: contact power; contact pressure; contact time; bonding time;
a second welding spot: contact power; contact pressure; contact time; bonding time;
first solder balls: contact power; contact pressure; contact time; bonding time;
under the condition that the parameters are unchanged, setting the following two variables, namely the bonding power and the bonding pressure of the first welding spot; and the bonding power and bonding pressure of the second welding spot;
9 experimental groups were set up to set up different parameters with respect to the bonding power and bonding pressure of the first solder joint and the bonding power and bonding pressure of the two solder joints, respectively, see table 1 below:
TABLE 1
The experimental result judges whether the product is qualified or not through appearance, tension, thrust, hot and cold impact and appearance, tension and thrust after high-pressure water boiling, and the specific standard is as follows:
appearance: the welding spots are not dropped;
and (3) tensile force test: > 25g;
thrust testing: > 80g;
specific experimental results for the 9 experimental groups are shown in table 2 below:
TABLE 2
| Sequence number | Appearance of | Tension force | Thrust force | Cold and hot impact | High pressure water boiling | Appearance of | Tension force | Thrust force | Results | |
| 1 | NG | |||||||||
| 2 | |
|||||||||
| 3 | | NG | ||||||||
| 4 | OK | OK | OK | OK | OK | OK | OK | OK | OK | |
| 5 | OK | OK | OK | OK | OK | OK | OK | OK | OK | |
| 6 | OK | OK | OK | OK | OK | OK | OK | OK | OK | |
| 7 | OK | OK | OK | OK | OK | OK | OK | OK | OK | |
| 8 | OK | NG | ||||||||
| 9 | NG |
Wherein OK indicates pass and NG indicates fail.
As can be seen from Table 2 above, the results of the 4-7 groups were all acceptable and the four groups were examined for push-pull values as shown in Table 3 below:
TABLE 3 Table 3
By data analysis: the final determined parameters are a fifth set of parameters, the specific parameters of which are shown in table 4 below:
TABLE 4 Table 4
| First welding spot | Second welding spot | First solder ball | |
| Reserve power/% | 0 | 10 | 18 |
| Contact power/% | 0 | 30 | 20 |
| Contact pressure/g | 100 | 200 | 200 |
| Contact time/ms | 5 | 8 | 5 |
| Bonding power/% | 35 | 30 | 65 |
| Bonding pressure/g | 100 | 100 | 100 |
| Bonding time/ms | 10 | 12 | 20 |
| Released power/% | 0 | 0 | 0 |
| Release pressure/g | 0 | 35 | 0 |
| Release time/ms | 0 | 2 | 0 |
Therefore, through the setting of a series of process parameters, the operation of gold wire bonding between two planes with height differences through an automatic gold wire bonding machine is realized, so that the time is saved, and the quality is ensured.
In one embodiment, the bonding power of the first and second pads may be 25-45% and the bonding pressure may be 80-100g, according to the experimental conditions described above.
In a preferred embodiment, the gold wire has a diameter of 50 μm, and the bonding power of the first solder joint is preferably 35% and the bonding pressure is preferably 100g; the bonding power of the second welding spot is preferably 30%, and the bonding pressure is preferably 100g.
In one embodiment, after the step 4, the bonding method further includes:
and (5) performing physical property inspection and reflector coupling inspection on the bonded gold wires, and judging whether the gold wires are qualified or not.
In one embodiment, referring to fig. 3, the electrode is an electrode strip or an electrode tube, preferably a square structure, and the surface of the electrode strip or the electrode tube is provided with a gold plating layer.
Preferably, as can be seen from fig. 3, the laser chip includes two rows parallel to each other, and the number of the electrode strips or the electrode tubes is three, namely, a first electrode strip 1, a second electrode strip 2, and a third electrode strip 3, and the electrode strips are connected by bonding through a plurality of gold wires 4. Wherein a first electrode strip 1 and a third electrode strip 3 are arranged in parallel with the laser chips of two rows, and the other second electrode strip 2 is arranged at the end part of the semiconductor laser tube shell.
Example 2
Referring to fig. 3, embodiment 2 discloses a semiconductor laser, in which a plurality of laser chips and at least two electrodes are disposed in a package of the semiconductor laser, and the electrodes are connected by using any one of the bonding methods described above. Other structures of the semiconductor laser will not be described in detail.
The foregoing is merely an embodiment of the present invention and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, expansion, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (2)
1. A method for bonding gold wires in a semiconductor laser package, the method comprising the steps of:
before step 1, testing and selecting technological parameters of gold wire welding in an experimental mode in advance;
determining and presetting optimal technological parameters of equipment for welding gold wires according to physical property tests;
the process parameters include any one or more of the following: contact power, contact pressure, contact time, bonding power, or bonding pressure;
physical property testing includes any one or more of the following: appearance observation, tension, pushing force, cold and hot impact, high-pressure water boiling, and appearance observation, tension or pushing force after cold and hot impact and high-pressure water boiling;
marking at a position of a semiconductor laser tube shell, which is required to be pasted with electrodes, by using a laser marking machine, respectively pasting and fixing at least two electrodes at marking positions in the semiconductor laser tube shell, wherein a height difference exists between the two electrodes to be connected;
the marking position on the semiconductor laser tube shell is preset with a positioning groove, and the positioning groove is formed when the semiconductor laser tube shell is processed and molded;
step 2, one end of the gold wire is welded on the lower electrode of the two electrodes to be connected, and a first welding spot is formed;
step 3, welding the other end of the gold wire on the higher electrode of the two electrodes to be connected, and forming a second welding spot; the radian of the bonded gold wire can support the gold wire from collapsing, so that the product quality is ensured;
step 3, planting a first solder ball on the second welding spot, and cutting off the gold wire;
step 4, completing connection between the electrodes and realizing serial connection of the electrodes and the laser chips in the semiconductor laser tube shell;
after the step 4, the bonding method further includes:
performing physical property inspection and reflector coupling inspection on the bonded gold wires, and judging whether the gold wires are qualified or not;
the bonding power of the first welding spot and the second welding spot is 25-45%, and the bonding pressure is 80-100g;
the diameter of the gold wire is 50 mu m, the bonding power of the first welding spot is 35%, and the bonding pressure is 100g; the bonding power of the second welding spot is 30%, and the bonding pressure is 100g;
the electrode is an electrode strip or an electrode tube, and a gold plating layer is arranged on the surface of the electrode strip or the electrode tube; the laser chip comprises two rows which are mutually parallel, the number of the electrode strips or the electrode tubes is three, two of the electrode strips or the electrode tubes are arranged in parallel with the laser chip of the two rows, and the other electrode strip or the electrode tubes are arranged at the end part of the semiconductor laser tube shell.
2. A semiconductor laser, characterized in that a plurality of laser chips and at least two electrodes are arranged in a package of the semiconductor laser, and the electrodes are connected by the bonding method of claim 1.
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| JP2010129922A (en) * | 2008-11-28 | 2010-06-10 | Sony Corp | Method of manufacturing semiconductor laser |
| CN112186497A (en) * | 2020-10-14 | 2021-01-05 | 高意通讯（深圳）有限公司 | Semiconductor laser and packaging method |
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| CN103633552B (en) * | 2012-08-29 | 2016-08-03 | 山东华光光电子有限公司 | A kind of SMD individual laser package structure and the method for packing in photoelectric circuit thereof |
| CN105244307B (en) * | 2015-09-01 | 2017-10-27 | 华进半导体封装先导技术研发中心有限公司 | The preparation method of fan-out package structure |
| CN105703213A (en) * | 2016-04-22 | 2016-06-22 | 西安炬光科技股份有限公司 | Heat sink insulated liquid refrigeration semiconductor laser and stack array thereof |
| JP2018019036A (en) * | 2016-07-29 | 2018-02-01 | 株式会社フジクラ | Wire bonding structure and manufacturing method thereof |
| CN206370402U (en) * | 2016-12-14 | 2017-08-01 | 深圳清华大学研究院 | Fixing device for the automatic routing of semiconductor laser |
| CN206657800U (en) * | 2017-04-19 | 2017-11-21 | 深圳市奥赛瑞科技有限公司 | Full-automatic bonding die bonding apparatus |
| CN111883434A (en) * | 2020-08-07 | 2020-11-03 | 安徽华东光电技术研究所有限公司 | Flow standard device module manufacturing process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010129922A (en) * | 2008-11-28 | 2010-06-10 | Sony Corp | Method of manufacturing semiconductor laser |
| CN112186497A (en) * | 2020-10-14 | 2021-01-05 | 高意通讯（深圳）有限公司 | Semiconductor laser and packaging method |
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