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CN103999484A - 作为声学设备中的屏障的嵌入式电介质和制造方法 - Google Patents

作为声学设备中的屏障的嵌入式电介质和制造方法 Download PDF

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CN103999484A
CN103999484A CN201180074631.2A CN201180074631A CN103999484A CN 103999484 A CN103999484 A CN 103999484A CN 201180074631 A CN201180074631 A CN 201180074631A CN 103999484 A CN103999484 A CN 103999484A
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metal layers
microphone
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dielectric film
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J·B·斯切赫
P·范凯塞尔
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Knowles Electronics LLC
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    • H—ELECTRICITY
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    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H04R17/025—Microphones using a piezoelectric polymer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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    • H04R1/08—Mouthpieces; Microphones; Attachments therefor
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    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
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    • B32—LAYERED PRODUCTS
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    • B32—LAYERED PRODUCTS
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    • B32B2307/00—Properties of the layers or laminate
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    • B32B2307/00—Properties of the layers or laminate
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    • B81B2201/00—Specific applications of microelectromechanical systems
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    • B81B2201/0257—Microphones or microspeakers
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract

麦克风基体包括多个金属层和多个内芯板层。所述多个内芯板层中的每一个布置在所述多个金属层中选择的一些金属层之间。电介质薄膜布置在所述多个金属层中选择的其他一些金属层之间。端口贯穿金属层和内芯板层，但是不贯穿电介质薄膜。所述电介质薄膜具有压紧部分和未压紧部分。所述未压紧部分延伸跨过所述端口，并且所述压紧部分与所述多个金属层中选择的其他一些金属层接触。薄膜的所述压紧部分有效地用作无源电子元件，并且所述未压紧部分有效地用作防止至少某些外部碎屑来回穿过所述端口的屏障。

Description

作为声学设备中的屏障的嵌入式电介质和制造方法
技术领域
本申请涉及声学设备，更具体地涉及这些设备的构造。
背景技术
各种类型的声学设备(例如，麦克风和接收器)已经使用了多年。在这些设备中，不同的电子元件被一起容纳在壳体或者组件内。例如，麦克风通常包括振膜和背板(除了其他元件之外)，并且这些元件一起置于壳体内。其他类型的声学设备(例如，接收器)可以包括其他类型的元件。
声学设备通常具有允许声音进入到壳体的内部(或者从所述内部离开)的端口。例如，麦克风可以具有允许声音从外部进入并对进入的声音进行放大的端口。在另一个例子中，扬声器通常包括允许声音从壳体的内部离开的端口。无论声音的传播方向如何，与该端口相关的一个问题是：尽管它们允许声音进入到设备(或者从设备离开)，但它们也可能允许碎屑进入到声学设备内部。例如，如果用在助听器中，则可允许耳垢或者其他类型的碎屑通过端口进入到设备。除了固体碎屑之外，还能够允许各种类型的液体进入到设备的内部。所有这些类型的材料可能损害声学设备和/或对声学设备的工作产生不利的影响。
现有的系统已经有时在端口上使用屏障，以防止碎屑或者其他异物经由端口进入到声学设备的内部。在一个现有的例子中，将金属滤网置于端口之上。不幸的是，金属滤网会对声学设备增加气流阻力。增加的气流阻力劣化了设备的性能，从而用户对这些现有的系统产生了不满。
附图说明
为了更全面地理解本公开，应当参考下面的详细描述和附图，其中：
图1包括根据本发明的各种实施方式的电介质薄膜层的底视图；
图2包括根据本发明的各种实施方式的、具有图1的电介质薄膜层的声学设备沿示出的线A-A的侧面剖视图；
图3包括示出根据本发明的各种实施方式的、一种类型的膨体聚四氟乙烯(ePTFE)材料的插入损失的示意图；
图4包括示出根据本发明的各种实施方式的、麦克风基体的各个层的表；
图5包括示出根据本发明的各种实施方式的、用于制作麦克风基体的流程图。
本领域技术人员将会理解，为了简单清楚的目的而示出了图中的元件。还应该理解的是，可以以特定的发生顺序来描述或者说明某些动作和/或步骤，同时本领域技术人员将会理解实际上并不需要这种特定的顺序。还应当理解的是，除非本文提出的特定含义之外，本文所使用的术语和表述具有如在它们相应的研究和学习的各个领域中赋予该术语和表述的一般含义。
具体实施方式
提供了具有同时作为电介质层和入口屏障的薄膜的声学设备。如此配置的设备是可制造的，防止外界物质进入到该设备，同时不会增加或者显著地增加设备的声阻。另外，本文描述的设备为无源电子元件(例如，电容器)提供了电介质层。
在一个方面，声学设备(例如，麦克风)的基体(或者电路板或者基板)包括多层的各种材料。所述层包括至少一些金属层和至少一些内芯板层。电介质薄膜夹在这些层的某些层之间。端口贯穿这些层，但是所述电介质薄膜延伸跨过所述端口。所述电介质薄膜的一部分是压紧的，并且该压紧部分可以用作电容器。未压紧部分跨过所述端口并用作屏障。所述电介质薄膜由任何合适的材料(例如，膨体聚四氟乙烯(ePTFE))或者其他高分子薄膜构成。材料的其他例子是可能的。在使用合适大小(例如，直径大于约1.0mm)的端口时，所述电介质薄膜对进入(或者离开)设备的声音提供很少的声阻。
所述电介质薄膜的压紧部分具有足以使该部分用作电容器的增加的介电常数。因此，单个电介质薄膜同时作为屏障和无源电子元件。另外，有足够的声学/声音流以使得电介质薄膜不作为声阻。
在很多的这些实施方式中，麦克风基体包括多个金属层和多个内芯板层。所述多个内芯板层中的每一个布置在所述多个金属层中选择的一些金属层之间。电介质薄膜布置在所述多个金属层中选择的其他一些金属层之间。端口贯穿金属层和内芯板层，但是不贯穿电介质薄膜。所述电介质薄膜具有压紧部分和未压紧部分。所述未压紧部分延伸跨过所述端口，并且所述压紧部分与所述多个金属层中选择的其他一些金属层接触。所述薄膜的所述压紧部分有效地用作无源电子元件，并且所述未压紧部分有效地用作防止至少某些外部碎屑来回穿过所述端口的屏障。
现在参考图1和图2，描述了具有电介质薄膜102的声学设备100的一个例子。设备100包括盖子或者容器104、电介质薄膜102、第一内芯板层106、第二内芯板层108、第一金属层110、第二金属层112、第三金属层114、第四金属层116、换能器118、集成电路120、阻焊层122、焊盘124和声学端口126。
盖子或者罩子104由任何合适的材料(例如，金属或者硬塑料)构造。电介质薄膜102包括未压紧区域132和压紧区域134。压紧区域134总体上位于电介质层102直接夹在其他相邻层之间(即，与这些相邻层接触)的地方。未压紧区域132总体上位于电介质层102延伸跨过端口126的地方(即，层102不直接与相邻层接触的地方)。对层102进行压紧(通过使其在相邻层之间受到挤压并保持在相邻层之间)改变了压紧区域的介电常数值，与未压紧区域相比，增加了介电常数值，从而使电介质适合用作电容器。电容器的电极通过电镀通孔过孔垂直地电连接到合适的金属层和导线。
在一个例子中，层102是膨胀的特氟龙(Teflon)膨体聚四氟乙烯(ePTFE)膜。由于其低密度性(例如，大于70％的体积是空气)，该膜是相对的声学上透明的。现在参考图3，针对两个ePTFE膜(NTF1026和NTF1033)，示出了两种ePTFE的插入损失(声音渗透性)。
在一个例子中，第一内芯板层106和第二内芯板层108由玻璃增强层压板构造。内芯板层106和108的目的是提供机械刚性和金属层之间的电绝缘性。
第一金属层110、第二金属层112、第三金属层114和第四金属层116由合适的金属(例如，铜)构造。这些层的目的是提供导电通路和布线功能。例如，层110可以是布线和焊线层。层112可以是普通的电容接地。层114可以用于信号电极。层116可以用于用户的焊盘。如图4所示，示出了提出的麦克风基体金属层叠的一个例子。有两个内芯板层(C1和C2)和四个金属层(1，2，3和4)以及电介质层(D)。包括了这些层的成分(描述)、厚度、公差和其他信息。如所示出的，金属层由子部分构成。可以将这些层一起称为麦克风基体(或者电路板)。应当理解的是，本文所描述的示例性的基体仅是一个例子，并且可以根据特定用户的需要或者特定系统的要求而改变基体的数量、类型、配置、材料和其他方面。
作为电容器，由未压紧的ePTFE构成的层102的固有的低介电常数(k＝1.3)可能在获得有用的电容器方面存在问题。在某些方面，未压紧的ePTFE提供作为嵌入式电介质薄膜仅约10％的每单位面积电容。然而，因为ePTFE的压缩特性，能够在层压工艺期间将它压缩至接近块体密度(除了在声学端口孔处的保持未压紧的材料之外)，以产生当前材料的约20％的每单位面积电容。
换能器118包括各种元件，例如，MEMS芯片(die)、振膜、电荷板等。换能器用于将声能转换为发送到集成电路120的电信号。阻焊层122的功能是保护并绝缘下面的金属导线并防止焊料迁移。焊盘116提供基体和最终PCB组件之间的电连接和机械连接。
在图1和图2的系统的工作的一个例子中，电介质薄膜102的压紧部分132具有足以使该部分用作电容器的增加的介电常数，而未压紧部分134作为端口126中的屏障。因此，单个电介质薄膜102同时作为屏障和无源电子元件。此外，具有足够的声学/声音流以使得电介质薄膜102不充当声阻，从而对设备100的工作产生很少影响或者没有不利的影响。
现在参考图5，描述了用于制作麦克风基体的工艺的一个例子。在步骤502，将金属化层蚀刻到顶部内芯板和底部内芯板上。在步骤504，使用机械钻孔机钻出通过顶部内芯板和底部内芯板的声学端口孔。在步骤506，在顶部内芯板和底部内芯板之间进行ePTFE膜的层压。这会生成具有嵌入式电介质和屏障的多层PCB。
在步骤508，使用机械钻孔机钻出用于电连接金属导线和层的电镀通孔(PTH)过孔。在步骤510，对电路板应用铜滚镀。铜滚镀的目的是涂覆过孔的内壁以使得它们在轴向方向上导电。在步骤512，对顶部阻焊层和底部阻焊层进行印刷并随后进行固化。在步骤514，应用ENIG表面处理(finish)以提供耐腐蚀、可引线结合并且可软焊的表面。
因此，提供了使用ePTFE或者其他类似的材料同时作为声学设备(例如，麦克风)中的入口屏障和无源电子元件的方法。可以根据本方法将基于氟聚合物的膜(例如，ePTFE)直接嵌入到多层基体中，这与避免该方面的现有的方法相反。另外，与直觉相悖并与现有的方法形成鲜明对比的是，本方法的ePTFE材料用于无源电子元件中以提供本文所描述的各种优点。
本文描述了本发明的优选实施方式，包括发明者已知的实现本发明的最佳模式。应当理解，示出的实施方式仅是示例性的，不应将其作为本发明的范围的限制。

Claims (12)

1.一种麦克风基体，所述基体包括：
多个金属层；
多个内芯板层，所述多个内芯板层中的每一个布置在所述多个金属层中选择的一些金属层之间；
电介质薄膜，其布置在所述多个金属层中选择的其他一些金属层之间；
端口，其贯穿所述金属层和所述内芯板层，但是不贯穿所述电介质薄膜；
使得所述电介质薄膜具有压紧部分和未压紧部分，所述未压紧部分延伸跨过所述端口，并且所述压紧部分与所述多个金属层中选择的所述其他一些金属层接触；
使得所述薄膜的所述压紧部分有效地用作无源电子元件，并且所述未压紧部分有效地用作防止至少某些外部碎屑来回穿过所述端口的屏障。
2.根据权利要求1所述的基体，其中，所述压紧部分的介电常数值与所述未压紧部分的介电常数值不同。
3.根据权利要求1所述的基体，其中，所述薄膜包括膨胀特氟龙膨体聚四氟乙烯(ePTFE)膜。
4.根据权利要求1所述的基体，其中，所述电子元件包括电容器。
5.根据权利要求1所述的基体，其中，所述端口具有约大于约1.0mm的直径的尺寸。
6.一种麦克风，所述麦克风包括：
基体，所述基体包括：
-多个金属层；
-多个内芯板层，所述多个内芯板层中的每一个布置在所述多个金属层中选择的一些金属层之间；
-电介质薄膜，其布置在所述多个金属层中选择的其他一些金属层之间；
-端口，其贯穿所述金属层和所述内芯板层，但是不贯穿所述电介质薄膜；
-使得所述电介质薄膜具有压紧部分和未压紧部分，所述未压紧部分延伸跨过所述端口，并且所述压紧部分与所述多个金属层中选择的所述其他一些金属层接触；
-使得所述薄膜的所述压紧部分有效地用作无源电子元件，并且所述薄膜的所述未压紧部分有效地用作防止至少某些外部碎屑来回穿过所述端口的屏障；
换能器，其布置在所述基体上方、与所述基体连接、并且与所述端口连通，所述换能器被配置为将从所述端口接收到的声能转换为电能。
7.根据权利要求6所述的麦克风，所述麦克风还包括附着到所述基体的盖子，所述盖子覆盖所述换能器。
8.根据权利要求6所述的麦克风，所述麦克风还包括连接到所述换能器的放大器。
9.根据权利要求6所述的麦克风，其中，所述压紧部分的介电常数值与所述未压紧部分的介电常数值不同。
10.根据权利要求6所述的麦克风，其中，所述薄膜包括膨胀特氟龙膨体聚四氟乙烯(ePTFE)膜。
11.根据权利要求6所述的麦克风，其中，所述电子元件包括电容器。
12.根据权利要求6所述的基体，其中，所述端口具有约大于约1.0mm的直径的尺寸。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107108201A (zh) * 2014-12-15 2017-08-29 W.L.戈尔及同仁股份有限公司 用于微机电系统的排气件附接系统

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7434305B2 (en) 2000-11-28 2008-10-14 Knowles Electronics, Llc. Method of manufacturing a microphone
WO2013066343A1 (en) 2011-11-04 2013-05-10 Knowles Electronics, Llc Embedded dielectric as a barrier in an acoustic device and method of manufacture
US9402118B2 (en) 2012-07-27 2016-07-26 Knowles Electronics, Llc Housing and method to control solder creep on housing
US9491539B2 (en) 2012-08-01 2016-11-08 Knowles Electronics, Llc MEMS apparatus disposed on assembly lid
WO2014100184A1 (en) 2012-12-19 2014-06-26 Knowles Electronics, Llc Apparatus and method for high voltage i/o electro-static discharge protection
US9467785B2 (en) 2013-03-28 2016-10-11 Knowles Electronics, Llc MEMS apparatus with increased back volume
US9307328B2 (en) 2014-01-09 2016-04-05 Knowles Electronics, Llc Interposer for MEMS-on-lid microphone
KR101857427B1 (ko) * 2014-04-22 2018-05-15 로베르트 보쉬 게엠베하 Mems 마이크로폰 패키지
US9554214B2 (en) 2014-10-02 2017-01-24 Knowles Electronics, Llc Signal processing platform in an acoustic capture device
US9781505B2 (en) * 2015-01-09 2017-10-03 Knowles Electronics, Llc Top port microphone apparatus
US9800971B2 (en) 2015-03-17 2017-10-24 Knowles Electronics, Llc Acoustic apparatus with side port
DE102015107557A1 (de) 2015-05-13 2016-11-17 USound GmbH Leiterplattenmodul mit durchgehender Aussparung sowie diesbezügliche Schallwandleranordnung sowie Herstellungsverfahren
US10291973B2 (en) * 2015-05-14 2019-05-14 Knowles Electronics, Llc Sensor device with ingress protection
CN204885380U (zh) * 2015-07-28 2015-12-16 瑞声声学科技(深圳)有限公司 微带滤波器及使用该微带滤波器的麦克风装置
KR101684526B1 (ko) * 2015-08-28 2016-12-08 현대자동차 주식회사 마이크로폰 및 그 제조 방법
US20170240418A1 (en) * 2016-02-18 2017-08-24 Knowles Electronics, Llc Low-cost miniature mems vibration sensor
US10602254B2 (en) * 2016-06-13 2020-03-24 Current Lighting Solutions, Llc Packaging of luminaire mounted microphones
US10206023B2 (en) 2016-07-06 2019-02-12 Knowles Electronics, Llc Transducer package with through-vias
EP3450391A1 (en) * 2017-08-28 2019-03-06 Indigo Diabetes N.V. Encapsulation of sensing device
KR102466332B1 (ko) * 2018-01-02 2022-11-15 삼성전자주식회사 가스 센서 패키지
DE102018203098B3 (de) * 2018-03-01 2019-06-19 Infineon Technologies Ag MEMS-Sensor
CN112020865B (zh) 2018-04-26 2022-06-17 美商楼氏电子有限公司 具有透声隔膜的声学组件
CN113132838B (zh) 2019-12-30 2025-01-28 美商楼氏电子有限公司 用于麦克风组件的亥姆霍兹共振器
CN113132879B (zh) 2019-12-30 2023-06-30 美商楼氏电子有限公司 用于麦克风组件的声音端口适配器
US11706561B1 (en) 2021-12-23 2023-07-18 Knowles Electronics, Llc Balanced armature receiver with liquid-resistant pressure relief vent

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101346014A (zh) * 2007-07-13 2009-01-14 清华大学 微机电系统麦克风及其制备方法
US20090080682A1 (en) * 2004-03-09 2009-03-26 Panasonic Corporation Electret condenser microphone
CN101606397A (zh) * 2006-12-15 2009-12-16 加利福尼亚大学董事会 声学基片
US20100246877A1 (en) * 2009-01-20 2010-09-30 Fortemedia, Inc. Miniature MEMS Condenser Microphone Package and Fabrication Method Thereof

Family Cites Families (217)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3192086A (en) 1960-06-16 1965-06-29 Rca Corp Methods for manufacturing multilayered monolithic ceramic bodies
US3567844A (en) 1969-06-23 1971-03-02 Mc Donnell Douglas Corp Terminal pad for perforated circuit boards and substrates
US3735211A (en) 1971-06-21 1973-05-22 Fairchild Camera Instr Co Semiconductor package containing a dual epoxy and metal seal between a cover and a substrate, and method for forming said seal
US3735209A (en) 1972-02-10 1973-05-22 Motorola Inc Semiconductor device package with energy absorbing layer
US4127840A (en) 1977-02-22 1978-11-28 Conrac Corporation Solid state force transducer
JPS55112864U (zh) 1979-02-02 1980-08-08
US4222277A (en) 1979-08-13 1980-09-16 Kulite Semiconductor Products, Inc. Media compatible pressure transducer
US4277814A (en) 1979-09-04 1981-07-07 Ford Motor Company Semiconductor variable capacitance pressure transducer assembly
JPS622879Y2 (zh) 1981-03-25 1987-01-22
CA1165859A (en) 1981-10-19 1984-04-17 Guy J. Chaput Electret microphone shield
US4558184A (en) 1983-02-24 1985-12-10 At&T Bell Laboratories Integrated capacitive transducer
US4533795A (en) 1983-07-07 1985-08-06 American Telephone And Telegraph Integrated electroacoustic transducer
JPS60111129A (ja) 1983-11-21 1985-06-17 Yokogawa Hokushin Electric Corp 圧力センサ
US4691363A (en) 1985-12-11 1987-09-01 American Telephone & Telegraph Company, At&T Information Systems Inc. Transducer device
US4643935A (en) 1986-01-21 1987-02-17 Burroughs Corporation Epoxy-glass integrated circuit package having bonding pads in a stepped cavity
JPS62173814A (ja) 1986-01-28 1987-07-30 Alps Electric Co Ltd 弾性表面波素子搭載ユニツト
JPH0726887B2 (ja) 1986-05-31 1995-03-29 株式会社堀場製作所 コンデンサマイクロフオン型検出器用ダイアフラム
JPS63275926A (ja) 1987-05-07 1988-11-14 Fuji Electric Co Ltd 半導体圧力センサ
NL8702589A (nl) 1987-10-30 1989-05-16 Microtel Bv Elektro-akoestische transducent van de als elektreet aangeduide soort, en een werkwijze voor het vervaardigen van een dergelijke transducent.
US5293781A (en) 1987-11-09 1994-03-15 California Institute Of Technology Tunnel effect measuring systems and particle detectors
JPH01169333A (ja) 1987-12-25 1989-07-04 Hitachi Ltd 半導体圧力変換器
US4825335A (en) 1988-03-14 1989-04-25 Endevco Corporation Differential capacitive transducer and method of making
US4891686A (en) 1988-04-08 1990-01-02 Directed Energy, Inc. Semiconductor packaging with ground plane conductor arrangement
US4984268A (en) 1988-11-21 1991-01-08 At&T Bell Laboratories Telephone handset construction
DE3903229A1 (de) 1989-02-03 1990-08-09 Vdo Schindling Elektronischer schaltkreis
US4996097A (en) 1989-03-16 1991-02-26 W. L. Gore & Associates, Inc. High capacitance laminates
JPH036099A (ja) 1989-06-02 1991-01-11 Canon Inc 電子機器の実装構造
US5202652A (en) 1989-10-13 1993-04-13 Hitachi, Ltd. Surface acoustic wave filter device formed on a plurality of piezoelectric substrates
US5146435A (en) 1989-12-04 1992-09-08 The Charles Stark Draper Laboratory, Inc. Acoustic transducer
DE4000903C1 (zh) 1990-01-15 1990-08-09 Robert Bosch Gmbh, 7000 Stuttgart, De
US5101543A (en) 1990-07-02 1992-04-07 Gentex Corporation Method of making a variable capacitor microphone
JP2673993B2 (ja) 1990-07-02 1997-11-05 日本無線株式会社 表面弾性波装置
JPH0465643A (ja) 1990-07-05 1992-03-02 Mitsubishi Electric Corp 半導体圧力センサ及びその製造方法
JPH0799420B2 (ja) 1990-07-13 1995-10-25 アルプス電気株式会社 強誘電性液晶素子
US5153379A (en) 1990-10-09 1992-10-06 Motorola, Inc. Shielded low-profile electronic component assembly
US5216278A (en) 1990-12-04 1993-06-01 Motorola, Inc. Semiconductor device having a pad array carrier package
US5189777A (en) 1990-12-07 1993-03-02 Wisconsin Alumni Research Foundation Method of producing micromachined differential pressure transducers
JP2772739B2 (ja) 1991-06-20 1998-07-09 いわき電子株式会社 リードレスパッケージの外部電極構造及びその製造方法
US5241133A (en) 1990-12-21 1993-08-31 Motorola, Inc. Leadless pad array chip carrier
JPH06505597A (ja) 1991-03-04 1994-06-23 モトローラ・インコーポレーテッド 非導電性電子回路パッケージ用シールド装置
US5178015A (en) 1991-07-22 1993-01-12 Monolithic Sensors Inc. Silicon-on-silicon differential input sensors
FI109960B (fi) 1991-09-19 2002-10-31 Nokia Corp Elektroninen laite
JPH0590872A (ja) 1991-09-27 1993-04-09 Sumitomo Electric Ind Ltd 表面弾性波素子
US5237235A (en) 1991-09-30 1993-08-17 Motorola, Inc. Surface acoustic wave device package
US5257547A (en) 1991-11-26 1993-11-02 Honeywell Inc. Amplified pressure transducer
US5490220A (en) 1992-03-18 1996-02-06 Knowles Electronics, Inc. Solid state condenser and microphone devices
US5222050A (en) 1992-06-19 1993-06-22 Knowles Electronics, Inc. Water-resistant transducer housing with hydrophobic vent
FR2697675B1 (fr) 1992-11-05 1995-01-06 Suisse Electronique Microtech Procédé de fabrication de transducteurs capacitifs intégrés.
US5531787A (en) 1993-01-25 1996-07-02 Lesinski; S. George Implantable auditory system with micromachined microsensor and microactuator
US5475606A (en) 1993-03-05 1995-12-12 International Business Machines Corporation Faraday cage for a printed circuit card
US6262477B1 (en) 1993-03-19 2001-07-17 Advanced Interconnect Technologies Ball grid array electronic package
US5477008A (en) 1993-03-19 1995-12-19 Olin Corporation Polymer plug for electronic packages
US5459368A (en) 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module
US5502344A (en) 1993-08-23 1996-03-26 Rohm Co., Ltd. Packaged piezoelectric oscillator incorporating capacitors and method of making the same
JP3461204B2 (ja) 1993-09-14 2003-10-27 株式会社東芝 マルチチップモジュール
US5736783A (en) 1993-10-08 1998-04-07 Stratedge Corporation. High frequency microelectronics package
JPH07111254A (ja) 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd 半導体装置の製造方法
EP0660119B1 (en) 1993-12-27 2003-04-02 Hitachi, Ltd. Acceleration sensor
JP3352084B2 (ja) 1994-03-18 2002-12-03 日立化成工業株式会社 半導体素子搭載用基板及び半導体パッケージ
EP1213755A3 (en) 1994-03-18 2005-05-25 Hitachi Chemical Co., Ltd. Fabrication process of semiconductor package and semiconductor package
JPH07303022A (ja) 1994-05-09 1995-11-14 Murata Mfg Co Ltd 弾性表面波装置
US6191928B1 (en) 1994-05-27 2001-02-20 Littelfuse, Inc. Surface-mountable device for protection against electrostatic damage to electronic components
US5452268A (en) 1994-08-12 1995-09-19 The Charles Stark Draper Laboratory, Inc. Acoustic transducer with improved low frequency response
US5545912A (en) 1994-10-27 1996-08-13 Motorola, Inc. Electronic device enclosure including a conductive cap and substrate
JP3171043B2 (ja) 1995-01-11 2001-05-28 株式会社村田製作所 弾性表面波装置
JPH08233848A (ja) 1995-02-28 1996-09-13 Mitsubishi Electric Corp 半導体センサ
US5506919A (en) 1995-03-27 1996-04-09 Eastman Kodak Company Conductive membrane optical modulator
JP3308759B2 (ja) 1995-04-10 2002-07-29 日本電気株式会社 弾性表面波装置
US5659195A (en) 1995-06-08 1997-08-19 The Regents Of The University Of California CMOS integrated microsensor with a precision measurement circuit
US6242802B1 (en) 1995-07-17 2001-06-05 Motorola, Inc. Moisture enhanced ball grid array package
JPH09107192A (ja) 1995-10-09 1997-04-22 Kitagawa Ind Co Ltd プリント基板およびケース兼用プリント基板ならびに携帯型通信機器
CN1094717C (zh) 1995-11-16 2002-11-20 松下电器产业株式会社 印刷电路板的安装体
JP3294490B2 (ja) 1995-11-29 2002-06-24 株式会社日立製作所 Ｂｇａ型半導体装置
JP3432982B2 (ja) 1995-12-13 2003-08-04 沖電気工業株式会社 表面実装型半導体装置の製造方法
US5748758A (en) 1996-01-25 1998-05-05 Menasco, Jr.; Lawrence C. Acoustic audio transducer with aerogel diaphragm
JPH09222372A (ja) 1996-02-19 1997-08-26 Mitsubishi Electric Corp 半導体式センサ
JPH09232904A (ja) 1996-02-28 1997-09-05 Oki Electric Ind Co Ltd Ｓａｗフィルタ用セラミックパッケージ
US5888845A (en) 1996-05-02 1999-03-30 National Semiconductor Corporation Method of making high sensitivity micro-machined pressure sensors and acoustic transducers
US5761053A (en) 1996-05-08 1998-06-02 W. L. Gore & Associates, Inc. Faraday cage
JP2867954B2 (ja) 1996-05-20 1999-03-10 日本電気株式会社 チップ型半導体装置の製造方法
JPH09318650A (ja) 1996-05-27 1997-12-12 Matsushita Electric Works Ltd センサ装置及びその製造方法
JP3209120B2 (ja) 1996-06-12 2001-09-17 松下電工株式会社 圧力センサ
US5939968A (en) 1996-06-19 1999-08-17 Littelfuse, Inc. Electrical apparatus for overcurrent protection of electrical circuits
US5889872A (en) 1996-07-02 1999-03-30 Motorola, Inc. Capacitive microphone and method therefor
US5838551A (en) 1996-08-01 1998-11-17 Northern Telecom Limited Electronic package carrying an electronic component and assembly of mother board and electronic package
US6140144A (en) 1996-08-08 2000-10-31 Integrated Sensing Systems, Inc. Method for packaging microsensors
JPH1061513A (ja) 1996-08-15 1998-03-03 Mitsubishi Electric Corp 燃料タンク用圧力検出装置
US5776798A (en) 1996-09-04 1998-07-07 Motorola, Inc. Semiconductor package and method thereof
US5854846A (en) 1996-09-06 1998-12-29 Northrop Grumman Corporation Wafer fabricated electroacoustic transducer
US5981314A (en) 1996-10-31 1999-11-09 Amkor Technology, Inc. Near chip size integrated circuit package
US6962829B2 (en) 1996-10-31 2005-11-08 Amkor Technology, Inc. Method of making near chip size integrated circuit package
US5740261A (en) 1996-11-21 1998-04-14 Knowles Electronics, Inc. Miniature silicon condenser microphone
JP3576727B2 (ja) 1996-12-10 2004-10-13 株式会社デンソー 表面実装型パッケージ
US6119920A (en) 1996-12-20 2000-09-19 Rf Monolithics, Inc. Method of forming an electronic package with a solder seal
US5999821A (en) 1997-01-29 1999-12-07 Motorola, Inc. Radiotelephone having a user interface module
FI970409A7 (fi) 1997-01-31 1998-08-01 Nokia Corp Menetelmä mikrofonin suojaamiseksi ulkoisilta häiriötekijäiltä ja mikrofonin häiriösuojus
US5870482A (en) 1997-02-25 1999-02-09 Knowles Electronics, Inc. Miniature silicon condenser microphone
US5923995A (en) 1997-04-18 1999-07-13 National Semiconductor Corporation Methods and apparatuses for singulation of microelectromechanical systems
US6117705A (en) 1997-04-18 2000-09-12 Amkor Technology, Inc. Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate
US6118881A (en) 1997-05-13 2000-09-12 Lucent Technologies Inc. Reduction of flow-induced microphone noise
US5895229A (en) 1997-05-19 1999-04-20 Motorola, Inc. Microelectronic package including a polymer encapsulated die, and method for forming same
US5831262A (en) 1997-06-27 1998-11-03 Lucent Technologies Inc. Article comprising an optical fiber attached to a micromechanical device
US5898574A (en) 1997-09-02 1999-04-27 Tan; Wiling Self aligning electrical component
TW387198B (en) 1997-09-03 2000-04-11 Hosiden Corp Audio sensor and its manufacturing method, and semiconductor electret capacitance microphone using the same
US5939784A (en) 1997-09-09 1999-08-17 Amkor Technology, Inc. Shielded surface acoustical wave package
JP3652488B2 (ja) 1997-12-18 2005-05-25 Ｔｄｋ株式会社 樹脂パッケージの製造方法
JPH11201846A (ja) 1998-01-12 1999-07-30 Mitsubishi Electric Corp 半導体圧力検出装置
JPH11239037A (ja) 1998-02-20 1999-08-31 Nec Corp 弾性表面波装置
US6282072B1 (en) 1998-02-24 2001-08-28 Littelfuse, Inc. Electrical devices having a polymer PTC array
US6052464A (en) 1998-05-29 2000-04-18 Motorola, Inc. Telephone set having a microphone for receiving or an earpiece for generating an acoustic signal via a keypad
AU4317099A (en) 1998-06-05 1999-12-20 Knowles Electronics, Inc. Solid-state receiver
FI105880B (fi) 1998-06-18 2000-10-13 Nokia Mobile Phones Ltd Mikromekaanisen mikrofonin kiinnitys
US6428650B1 (en) 1998-06-23 2002-08-06 Amerasia International Technology, Inc. Cover for an optical device and method for making same
US5977626A (en) 1998-08-12 1999-11-02 Industrial Technology Research Institute Thermally and electrically enhanced PBGA package
GB9818474D0 (en) 1998-08-26 1998-10-21 Hughes John E Multi-layer interconnect package for optical devices & standard semiconductor chips
JP2000121469A (ja) 1998-10-16 2000-04-28 Mitsubishi Electric Corp 圧力センサ
US6088463A (en) 1998-10-30 2000-07-11 Microtronic A/S Solid state silicon-based condenser microphone
US6108184A (en) 1998-11-13 2000-08-22 Littlefuse, Inc. Surface mountable electrical device comprising a voltage variable material
US6534340B1 (en) 1998-11-18 2003-03-18 Analog Devices, Inc. Cover cap for semiconductor wafer devices
JP3472493B2 (ja) 1998-11-30 2003-12-02 ホシデン株式会社 半導体エレクトレットコンデンサーマイクロホン
US6078245A (en) 1998-12-17 2000-06-20 Littelfuse, Inc. Containment of tin diffusion bar
US6339365B1 (en) 1998-12-29 2002-01-15 Kabushiki Kaisha Toshiba Surface acoustic wave device comprising first and second chips face down bonded to a common package ground
JP4199867B2 (ja) 1999-01-06 2008-12-24 北陸電気工業株式会社 半導体圧力センサ装置
US7003127B1 (en) 1999-01-07 2006-02-21 Sarnoff Corporation Hearing aid with large diaphragm microphone element including a printed circuit board
WO2000042636A2 (en) 1999-01-12 2000-07-20 Teledyne Technologies Incorporated Micromachined device and method of forming the micromachined device
JP2000277970A (ja) 1999-03-24 2000-10-06 Matsushita Electric Ind Co Ltd 磁気遮蔽装置およびこれを備えた携帯情報機器
US6157546A (en) 1999-03-26 2000-12-05 Ericsson Inc. Shielding apparatus for electronic devices
CN1198489C (zh) 1999-04-09 2005-04-20 松下电器产业株式会社 高频组件的制造方法
JP2000307289A (ja) 1999-04-19 2000-11-02 Nec Corp 電子部品組立体
JP3571575B2 (ja) 1999-04-30 2004-09-29 シャープ株式会社 携帯電話機
US6136419A (en) 1999-05-26 2000-10-24 International Business Machines Corporation Ceramic substrate having a sealed layer
JP3873145B2 (ja) 1999-05-27 2007-01-24 京セラ株式会社 半導体素子収納用パッケージ
JP2000357937A (ja) 1999-06-17 2000-12-26 Murata Mfg Co Ltd 弾性表面波装置
JP3462806B2 (ja) 1999-08-06 2003-11-05 三洋電機株式会社 半導体装置およびその製造方法
CA2315417A1 (en) 1999-08-11 2001-02-11 Hiroshi Une Electret capacitor microphone
AU6984000A (en) 1999-09-06 2001-04-10 ROMBACH, Pirmin, Hernann, Otto A pressure transducer
US6522762B1 (en) 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system
US6829131B1 (en) 1999-09-13 2004-12-07 Carnegie Mellon University MEMS digital-to-acoustic transducer with error cancellation
JP3618063B2 (ja) 1999-09-29 2005-02-09 京セラ株式会社 半導体素子収納用パッケージ
US6404100B1 (en) 1999-10-18 2002-06-11 Kabushiki Kaisha Toshiba Surface acoustic wave apparatus and method of manufacturing the same
US6324907B1 (en) 1999-11-29 2001-12-04 Microtronic A/S Flexible substrate transducer assembly
US6526653B1 (en) 1999-12-08 2003-03-04 Amkor Technology, Inc. Method of assembling a snap lid image sensor package
JP2001208626A (ja) 2000-01-24 2001-08-03 Mitsubishi Electric Corp 半導体圧力センサ装置
US6479320B1 (en) 2000-02-02 2002-11-12 Raytheon Company Vacuum package fabrication of microelectromechanical system devices with integrated circuit components
US6656768B2 (en) 2001-02-08 2003-12-02 Texas Instruments Incorporated Flip-chip assembly of protected micromechanical devices
JP2001308217A (ja) 2000-04-27 2001-11-02 Kyocera Corp 半導体装置
US6876052B1 (en) 2000-05-12 2005-04-05 National Semiconductor Corporation Package-ready light-sensitive integrated circuit and method for its preparation
WO2001095486A1 (en) 2000-06-06 2001-12-13 Sawtek Inc. System and method for array processing of surface acoustic wave devices
JP3386043B2 (ja) 2000-08-09 2003-03-10 株式会社村田製作所 弾性表面波デバイス
US6535460B2 (en) 2000-08-11 2003-03-18 Knowles Electronics, Llc Miniature broadband acoustic transducer
EP1310136B1 (en) 2000-08-11 2006-03-22 Knowles Electronics, LLC Miniature broadband transducer
US6439869B1 (en) 2000-08-16 2002-08-27 Micron Technology, Inc. Apparatus for molding semiconductor components
US7092539B2 (en) 2000-11-28 2006-08-15 University Of Florida Research Foundation, Inc. MEMS based acoustic array
US7166910B2 (en) 2000-11-28 2007-01-23 Knowles Electronics Llc Miniature silicon condenser microphone
US7439616B2 (en) 2000-11-28 2008-10-21 Knowles Electronics, Llc Miniature silicon condenser microphone
US7434305B2 (en) 2000-11-28 2008-10-14 Knowles Electronics, Llc. Method of manufacturing a microphone
US6441503B1 (en) 2001-01-03 2002-08-27 Amkor Technology, Inc. Bond wire pressure sensor die package
US20020106091A1 (en) 2001-02-02 2002-08-08 Furst Claus Erdmann Microphone unit with internal A/D converter
US6859542B2 (en) 2001-05-31 2005-02-22 Sonion Lyngby A/S Method of providing a hydrophobic layer and a condenser microphone having such a layer
US6483037B1 (en) 2001-11-13 2002-11-19 Motorola, Inc. Multilayer flexible FR4 circuit
US7146016B2 (en) 2001-11-27 2006-12-05 Center For National Research Initiatives Miniature condenser microphone and fabrication method therefor
JP3686047B2 (ja) 2002-03-29 2005-08-24 沖電気工業株式会社 半導体装置の製造方法
US6621392B1 (en) 2002-04-25 2003-09-16 International Business Machines Corporation Micro electromechanical switch having self-aligned spacers
US6850133B2 (en) 2002-08-14 2005-02-01 Intel Corporation Electrode configuration in a MEMS switch
US6781231B2 (en) 2002-09-10 2004-08-24 Knowles Electronics Llc Microelectromechanical system package with environmental and interference shield
US7142682B2 (en) 2002-12-20 2006-11-28 Sonion Mems A/S Silicon-based transducer for use in hearing instruments and listening devices
DE10303263B4 (de) 2003-01-28 2012-01-05 Infineon Technologies Ag Mikrophonanordnung
US7382048B2 (en) 2003-02-28 2008-06-03 Knowles Electronics, Llc Acoustic transducer module
US7501703B2 (en) 2003-02-28 2009-03-10 Knowles Electronics, Llc Acoustic transducer module
US7233679B2 (en) 2003-09-30 2007-06-19 Motorola, Inc. Microphone system for a communication device
US6936918B2 (en) 2003-12-15 2005-08-30 Analog Devices, Inc. MEMS device with conductive path through substrate
JP2005203889A (ja) 2004-01-13 2005-07-28 Fujitsu Media Device Kk 弾性表面波デバイス
KR100709463B1 (ko) 2004-02-16 2007-04-18 주식회사 하이닉스반도체 나노 튜브 셀을 이용한 메모리 장치
JP3875240B2 (ja) 2004-03-31 2007-01-31 株式会社東芝 電子部品の製造方法
US7929714B2 (en) 2004-08-11 2011-04-19 Qualcomm Incorporated Integrated audio codec with silicon audio transducer
DE102004058879B4 (de) 2004-12-06 2013-11-07 Austriamicrosystems Ag MEMS-Mikrophon und Verfahren zur Herstellung
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
JP4377838B2 (ja) 2005-03-31 2009-12-02 株式会社日立製作所 ペダル装置及びそれを備えた自動車
US7280855B2 (en) 2005-06-28 2007-10-09 Research In Motion Limited Microphone coupler for a communication device
DE602007005405D1 (de) 2006-01-26 2010-05-06 Sonion Mems As Elastomerschild für Miniaturmikrofone
US7436054B2 (en) 2006-03-03 2008-10-14 Silicon Matrix, Pte. Ltd. MEMS microphone with a stacked PCB package and method of producing the same
US20070215962A1 (en) 2006-03-20 2007-09-20 Knowles Elecronics, Llc Microelectromechanical system assembly and method for manufacturing thereof
US20080217709A1 (en) 2007-03-07 2008-09-11 Knowles Electronics, Llc Mems package having at least one port and manufacturing method thereof
WO2009016587A1 (en) 2007-08-02 2009-02-05 Nxp B.V. Electro-acoustic transducer comprising a mems sensor
US8450817B2 (en) 2008-08-14 2013-05-28 Knowles Electronics Llc Microelectromechanical system package with strain relief bridge
JP5844155B2 (ja) 2008-10-14 2016-01-13 ノールズ エレクトロニクス，リミテッド ライアビリティ カンパニー 複数の変換器素子を含むマイクロフォン
KR20120014591A (ko) 2009-05-18 2012-02-17 노우레스 일렉트로닉스, 엘엘시 감소된 진동 감도를 갖는 마이크로폰
US8532323B2 (en) 2010-01-19 2013-09-10 Knowles Electronics, Llc Earphone assembly with moisture resistance
EP2381698A1 (en) 2010-04-21 2011-10-26 Nxp B.V. Microphone
EP2432249A1 (en) 2010-07-02 2012-03-21 Knowles Electronics Asia PTE. Ltd. Microphone
US8847289B2 (en) * 2010-07-28 2014-09-30 Goertek Inc. CMOS compatible MEMS microphone and method for manufacturing the same
US20120161258A1 (en) 2010-12-28 2012-06-28 Loeppert Peter V Package with a cmos die positioned underneath a mems die
CN103385010B (zh) 2010-12-28 2016-08-10 美商楼氏电子有限公司 具有位于mems裸片下面的cmos裸片的封装
CN103563399B (zh) * 2011-03-11 2017-06-09 歌尔股份有限公司 Cmos兼容的硅差分电容器麦克风及其制造方法
US8781140B2 (en) 2011-04-15 2014-07-15 Knowles Electronics, Llc Compact, highly integrated microphone assembly
US8879767B2 (en) 2011-08-19 2014-11-04 Knowles Electronics, Llc Acoustic apparatus and method of manufacturing
US8969980B2 (en) 2011-09-23 2015-03-03 Knowles Electronics, Llc Vented MEMS apparatus and method of manufacture
US20130177192A1 (en) 2011-10-25 2013-07-11 Knowles Electronics, Llc Vented Microphone Module
WO2013066343A1 (en) 2011-11-04 2013-05-10 Knowles Electronics, Llc Embedded dielectric as a barrier in an acoustic device and method of manufacture
US9033378B2 (en) 2011-12-01 2015-05-19 Heath O'Brien Jenkins Security door lock device
US8995694B2 (en) 2012-02-01 2015-03-31 Knowles Electronics, Llc Embedded circuit in a MEMS device
US9485560B2 (en) 2012-02-01 2016-11-01 Knowles Electronics, Llc Embedded circuit in a MEMS device
US9402118B2 (en) 2012-07-27 2016-07-26 Knowles Electronics, Llc Housing and method to control solder creep on housing
US9491539B2 (en) 2012-08-01 2016-11-08 Knowles Electronics, Llc MEMS apparatus disposed on assembly lid
US20140037120A1 (en) 2012-08-01 2014-02-06 Knowles Electronics, Llc Microphone Assembly
US20140064546A1 (en) 2012-08-01 2014-03-06 Knowles Electronics, Llc Microphone assembly
US9078063B2 (en) 2012-08-10 2015-07-07 Knowles Electronics, Llc Microphone assembly with barrier to prevent contaminant infiltration
US20140133686A1 (en) 2012-11-14 2014-05-15 Knowles Electronics, Llc Apparatus to prevent excess movement of mems components
US9137595B2 (en) 2012-11-14 2015-09-15 Knowles Electronics, Llc Apparatus for prevention of pressure transients in microphones
US20140291783A1 (en) 2013-03-21 2014-10-02 Knowles Electronics, Llc Cover for a mems microphone
US9467785B2 (en) 2013-03-28 2016-10-11 Knowles Electronics, Llc MEMS apparatus with increased back volume
US9301075B2 (en) 2013-04-24 2016-03-29 Knowles Electronics, Llc MEMS microphone with out-gassing openings and method of manufacturing the same
US20150041931A1 (en) 2013-08-12 2015-02-12 Knowles Electronics, Llc Embedded Micro Valve In Microphone
US20150139428A1 (en) 2013-11-20 2015-05-21 Knowles IPC (M) Snd. Bhd. Apparatus with a speaker used as second microphone
US20150172825A1 (en) 2013-12-13 2015-06-18 Knowles Electronics, Llc Method and Apparatus for an Acoustic Device Having a Coating
US9307328B2 (en) 2014-01-09 2016-04-05 Knowles Electronics, Llc Interposer for MEMS-on-lid microphone
DE112015000443T5 (de) 2014-01-21 2016-12-01 Knowles Electronics, Llc Mikrofonvorrichtung und Verfahren, um extrem hohe Akustiküberlastpunkte bereitzustellen

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090080682A1 (en) * 2004-03-09 2009-03-26 Panasonic Corporation Electret condenser microphone
CN101606397A (zh) * 2006-12-15 2009-12-16 加利福尼亚大学董事会 声学基片
CN101346014A (zh) * 2007-07-13 2009-01-14 清华大学 微机电系统麦克风及其制备方法
US20100246877A1 (en) * 2009-01-20 2010-09-30 Fortemedia, Inc. Miniature MEMS Condenser Microphone Package and Fabrication Method Thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107108201A (zh) * 2014-12-15 2017-08-29 W.L.戈尔及同仁股份有限公司 用于微机电系统的排气件附接系统

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