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AU2003217486A1 - Photovoltaic element and method of manufacturing the same - Google Patents

Photovoltaic element and method of manufacturing the same

Info

Publication number
AU2003217486A1
AU2003217486A1 AU2003217486A AU2003217486A AU2003217486A1 AU 2003217486 A1 AU2003217486 A1 AU 2003217486A1 AU 2003217486 A AU2003217486 A AU 2003217486A AU 2003217486 A AU2003217486 A AU 2003217486A AU 2003217486 A1 AU2003217486 A1 AU 2003217486A1
Authority
AU
Australia
Prior art keywords
manufacturing
same
photovoltaic element
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003217486A
Other languages
English (en)
Inventor
Naoki Ishikawa
Takahiro Mishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of AU2003217486A1 publication Critical patent/AU2003217486A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
AU2003217486A 2002-03-29 2003-03-24 Photovoltaic element and method of manufacturing the same Abandoned AU2003217486A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002096229A JP2003298078A (ja) 2002-03-29 2002-03-29 光起電力素子
JP2002-96229 2002-03-29
PCT/JP2003/003507 WO2003083955A1 (fr) 2002-03-29 2003-03-24 Element photovoltaique et procede de fabrication

Publications (1)

Publication Number Publication Date
AU2003217486A1 true AU2003217486A1 (en) 2003-10-13

Family

ID=28671828

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003217486A Abandoned AU2003217486A1 (en) 2002-03-29 2003-03-24 Photovoltaic element and method of manufacturing the same

Country Status (3)

Country Link
JP (1) JP2003298078A (fr)
AU (1) AU2003217486A1 (fr)
WO (1) WO2003083955A1 (fr)

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JP4657068B2 (ja) * 2005-09-22 2011-03-23 シャープ株式会社 裏面接合型太陽電池の製造方法
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US20080000522A1 (en) * 2006-06-30 2008-01-03 General Electric Company Photovoltaic device which includes all-back-contact configuration; and related processes
FR2906406B1 (fr) 2006-09-26 2008-12-19 Commissariat Energie Atomique Procede de realisation de cellule photovoltaique a heterojonction en face arriere.
JP5675031B2 (ja) 2006-11-28 2015-02-25 三洋電機株式会社 ｐ型アモルファスシリコン薄膜の製造方法、光起電力装置及び光起電力装置の製造方法
JP2010521824A (ja) * 2007-03-16 2010-06-24 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 太陽電池
FR2914501B1 (fr) * 2007-03-28 2009-12-04 Commissariat Energie Atomique Dispositif photovoltaique a structure a heterojonctions interdigitee discontinue
US7838062B2 (en) 2007-05-29 2010-11-23 Sunpower Corporation Array of small contacts for solar cell fabrication
DE102008030880A1 (de) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit großflächigen Rückseiten-Emitterbereichen und Herstellungsverfahren hierfür
DE102007059486A1 (de) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür
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DE102008030693A1 (de) * 2008-07-01 2010-01-14 Institut Für Solarenergieforschung Gmbh Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil
JP2010123859A (ja) * 2008-11-21 2010-06-03 Kyocera Corp 太陽電池素子および太陽電池素子の製造方法
KR101142861B1 (ko) * 2009-02-04 2012-05-08 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101578356B1 (ko) 2009-02-25 2015-12-17 엘지전자 주식회사 후면전극형 태양전지 및 그 제조방법
EP4350784A3 (fr) * 2009-04-21 2024-07-10 Tetrasun, Inc. Structures de cellules solaires à haut rendement et procédés de fabrication
US7927910B2 (en) * 2009-06-28 2011-04-19 Sino-American Silicon Products Inc. Manufacturing method of solar cell
CN102044579B (zh) * 2009-09-07 2013-12-18 Lg电子株式会社 太阳能电池
US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
FR2953999B1 (fr) 2009-12-14 2012-01-20 Total Sa Cellule photovoltaique heterojonction a contact arriere
KR20110071375A (ko) * 2009-12-21 2011-06-29 현대중공업 주식회사 후면전계형 이종접합 태양전지 및 그 제조방법
DE102010007695A1 (de) * 2010-02-09 2011-08-11 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Rückseitenkontaktierte Solarzelle mit unstrukturierter Absorberschicht
JP2011199277A (ja) * 2010-02-26 2011-10-06 Ulvac Japan Ltd 表面処理方法及び太陽電池セルの製造方法
US9184314B2 (en) 2010-03-26 2015-11-10 Tetrasun, Inc. Shielded electrical contact and doping through a passivating dielectric layer in a high-efficiency crystalline solar cell, including structure and methods of manufacture
WO2011125861A1 (fr) * 2010-03-31 2011-10-13 三洋電機株式会社 Procédé de fabrication de cellule solaire et cellule solaire
WO2011149021A1 (fr) * 2010-05-28 2011-12-01 株式会社エバテック Procédé de fabrication d'élément photovoltaïque et élément photovoltaïque
JP2013219065A (ja) * 2010-08-06 2013-10-24 Sanyo Electric Co Ltd 太陽電池及び太陽電池の製造方法
US8633379B2 (en) 2010-08-17 2014-01-21 Lg Electronics Inc. Solar cell
KR101699297B1 (ko) * 2010-09-08 2017-02-13 엘지전자 주식회사 태양 전지의 제조 방법
KR20120037838A (ko) 2010-10-12 2012-04-20 삼성전자주식회사 트랜지스터 및 이를 포함하는 전자소자
JP2012084747A (ja) * 2010-10-13 2012-04-26 National Institute Of Advanced Industrial & Technology 結晶シリコン太陽電池の作製方法
JP2012182167A (ja) * 2011-02-28 2012-09-20 Sanyo Electric Co Ltd 太陽電池及び太陽電池の製造方法
EP2690666A4 (fr) 2011-03-25 2014-09-03 Sanyo Electric Co Procédé de fabrication d'un élément de conversion photoélectrique
JP5398772B2 (ja) * 2011-03-31 2014-01-29 三菱電機株式会社 光起電力装置およびその製造方法、光起電力モジュール
GB2491209B (en) 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
JP5773194B2 (ja) * 2011-07-11 2015-09-02 国立大学法人東京農工大学 太陽電池の製造方法
US9490376B2 (en) * 2011-09-29 2016-11-08 Lg Electronics Inc. Solar cell module
US9054255B2 (en) 2012-03-23 2015-06-09 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
WO2014000826A1 (fr) * 2012-06-29 2014-01-03 Ecole Polytechnique Federale De Lausanne (Epfl) Cellule solaire
GB2503515A (en) * 2012-06-29 2014-01-01 Rec Cells Pte Ltd A rear contact heterojunction solar cell
JP6103867B2 (ja) * 2012-09-12 2017-03-29 シャープ株式会社 光電変換素子および光電変換素子の製造方法
JP6114029B2 (ja) * 2012-12-19 2017-04-12 順司 廣兼 光起電力素子およびその製造方法
KR101622089B1 (ko) * 2013-07-05 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
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JP6774163B2 (ja) * 2014-12-03 2020-10-21 シャープ株式会社 光電変換装置
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CN105932089B (zh) * 2016-06-24 2019-02-22 深圳大学 无界面掺杂的背接触硅异质结太阳能电池及其制备方法
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Also Published As

Publication number Publication date
WO2003083955A1 (fr) 2003-10-09
JP2003298078A (ja) 2003-10-17

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase