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AU2003211649A1 - Thin-film solar cell and its production method - Google Patents

Thin-film solar cell and its production method

Info

Publication number
AU2003211649A1
AU2003211649A1 AU2003211649A AU2003211649A AU2003211649A1 AU 2003211649 A1 AU2003211649 A1 AU 2003211649A1 AU 2003211649 A AU2003211649 A AU 2003211649A AU 2003211649 A AU2003211649 A AU 2003211649A AU 2003211649 A1 AU2003211649 A1 AU 2003211649A1
Authority
AU
Australia
Prior art keywords
thin
solar cell
production method
film solar
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003211649A
Inventor
Takashi Hayakawa
Michio Kondou
Akihisa Matsuda
Yoshiyuki Nasuno
Hiroshi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Sharp Corp
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST, Sharp Corp filed Critical National Institute of Advanced Industrial Science and Technology AIST
Publication of AU2003211649A1 publication Critical patent/AU2003211649A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
AU2003211649A 2002-02-28 2003-02-24 Thin-film solar cell and its production method Abandoned AU2003211649A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-54721 2002-02-28
JP2002054721 2002-02-28
PCT/JP2003/001999 WO2003073515A1 (en) 2002-02-28 2003-02-24 Thin-film solar cell and its production method

Publications (1)

Publication Number Publication Date
AU2003211649A1 true AU2003211649A1 (en) 2003-09-09

Family

ID=27764409

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003211649A Abandoned AU2003211649A1 (en) 2002-02-28 2003-02-24 Thin-film solar cell and its production method

Country Status (3)

Country Link
JP (1) JP3943080B2 (en)
AU (1) AU2003211649A1 (en)
WO (1) WO2003073515A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5330723B2 (en) 2008-03-28 2013-10-30 三菱重工業株式会社 Photoelectric conversion device
JP2011155026A (en) * 2009-12-11 2011-08-11 Mitsubishi Heavy Ind Ltd Process for production of photoelectric conversion device
JP5339294B2 (en) * 2010-03-02 2013-11-13 独立行政法人産業技術総合研究所 Method for manufacturing photoelectric conversion device
JP5220239B2 (en) * 2010-04-09 2013-06-26 三菱電機株式会社 Thin-film silicon solar cell manufacturing method and manufacturing apparatus
JP5787252B2 (en) * 2011-03-03 2015-09-30 株式会社Ｓｃｒｅｅｎホールディングス Crystallization index acquisition apparatus and crystallization index acquisition method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232235A (en) * 1995-02-24 1997-09-05 Mitsui Toatsu Chem Inc Photoelectric conversion element
JP3792376B2 (en) * 1997-11-10 2006-07-05 株式会社カネカ Silicon-based thin film photoelectric conversion device
JP3679595B2 (en) * 1998-02-17 2005-08-03 キヤノン株式会社 Photovoltaic element and manufacturing method thereof
JPH11274527A (en) * 1998-03-24 1999-10-08 Sanyo Electric Co Ltd Photovoltaic device
JP4488550B2 (en) * 1999-06-09 2010-06-23 富士電機システムズ株式会社 Thin film solar cell and manufacturing method thereof
JP2001156311A (en) * 1999-11-30 2001-06-08 Sharp Corp Thin film solar cell and method of manufacturing the same
JP2001267611A (en) * 2000-01-13 2001-09-28 Sharp Corp Thin film solar cell and method of manufacturing the same
JP4813637B2 (en) * 2000-02-23 2011-11-09 三菱重工業株式会社 Thin film polycrystalline silicon and silicon photoelectric conversion device manufacturing method

Also Published As

Publication number Publication date
JP3943080B2 (en) 2007-07-11
WO2003073515A1 (en) 2003-09-04
JPWO2003073515A1 (en) 2005-06-23

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase