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AU2003263592A1 - Method of manufacturing a solar cell - Google Patents

Method of manufacturing a solar cell

Info

Publication number
AU2003263592A1
AU2003263592A1 AU2003263592A AU2003263592A AU2003263592A1 AU 2003263592 A1 AU2003263592 A1 AU 2003263592A1 AU 2003263592 A AU2003263592 A AU 2003263592A AU 2003263592 A AU2003263592 A AU 2003263592A AU 2003263592 A1 AU2003263592 A1 AU 2003263592A1
Authority
AU
Australia
Prior art keywords
manufacturing
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003263592A
Other languages
English (en)
Other versions
AU2003263592A8 (en
Inventor
Makiko Emoto
Naoki Ishikawa
Takahiro Mishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of AU2003263592A8 publication Critical patent/AU2003263592A8/xx
Publication of AU2003263592A1 publication Critical patent/AU2003263592A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/703Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
AU2003263592A 2002-09-06 2003-09-02 Method of manufacturing a solar cell Abandoned AU2003263592A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-261888 2002-09-06
JP2002261888A JP2004103736A (ja) 2002-09-06 2002-09-06 太陽電池の製造方法
PCT/JP2003/011203 WO2004023567A2 (fr) 2002-09-06 2003-09-02 Procede de fabrication de photopiles

Publications (2)

Publication Number Publication Date
AU2003263592A8 AU2003263592A8 (en) 2004-03-29
AU2003263592A1 true AU2003263592A1 (en) 2004-03-29

Family

ID=31973143

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003263592A Abandoned AU2003263592A1 (en) 2002-09-06 2003-09-02 Method of manufacturing a solar cell

Country Status (3)

Country Link
JP (1) JP2004103736A (fr)
AU (1) AU2003263592A1 (fr)
WO (1) WO2004023567A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI267897B (en) * 2005-11-10 2006-12-01 Tatung Co Substrate with anti-reflection layer and its manufacturing method
KR100964153B1 (ko) * 2006-11-22 2010-06-17 엘지전자 주식회사 태양전지의 제조방법 및 그에 의해 제조되는 태양전지
JP2009070933A (ja) * 2007-09-12 2009-04-02 Oji Paper Co Ltd 単粒子膜エッチングマスクを有する表面微細凹凸構造体形成用基板とその製法及び表面微細凹凸構造体
KR100971658B1 (ko) 2008-01-03 2010-07-22 엘지전자 주식회사 실리콘 태양전지의 텍스처링 방법
DE112009000924T9 (de) * 2008-04-17 2012-05-16 Mitsubishi Electric Corp. Oberflächenaufrauungsverfahren für ein Substrat und Herstellungsverfahren für eine Fotovoltaische Vorrichtung
TWI443162B (zh) * 2008-09-05 2014-07-01 Lg Chemical Ltd 膠以及使用其製備太陽能電池之方法
KR101160115B1 (ko) * 2009-05-29 2012-06-26 주식회사 효성 함몰전극형 태양전지의 제조방법
US8992786B2 (en) * 2010-04-30 2015-03-31 Corning Incorporated Anti-glare surface and method of making
FR2960562B1 (fr) * 2010-05-31 2012-05-25 Saint Gobain Cristaux Et Detecteurs Monocristal texture
WO2012024676A2 (fr) 2010-08-20 2012-02-23 First Solar, Inc. Module photovoltaïque anti-réfléchissant
US8658454B2 (en) * 2010-09-20 2014-02-25 Sunpower Corporation Method of fabricating a solar cell
DE102010044132A1 (de) * 2010-11-18 2012-05-24 Schott Ag Solarzelle mit einer homogenen Lichteinfangstruktur und Verfahren zur Herstellung derselben
DE102011084346A1 (de) 2011-10-12 2013-04-18 Schott Solar Ag Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
CN102496660A (zh) * 2011-12-30 2012-06-13 常州亿晶光电科技有限公司 一种酸碱结合的单晶硅太阳能电池制绒方法
JP5864276B2 (ja) * 2012-01-11 2016-02-17 和椿科技股▲フン▼有限公司 ナノ微細構造の製造方法
CN103762259B (zh) * 2014-01-21 2016-05-04 南通大学 一种凸透镜型波纹式太阳能电池硅基片及其制造工艺

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407695A (en) * 1981-12-31 1983-10-04 Exxon Research And Engineering Co. Natural lithographic fabrication of microstructures over large areas
JPS61108176A (ja) * 1984-11-01 1986-05-26 Fuji Electric Co Ltd 粗面化方法
JPH0383339A (ja) * 1989-08-28 1991-04-09 Sumitomo Electric Ind Ltd 結晶シリコン表面テクスチヤー形成方法
US6091021A (en) * 1996-11-01 2000-07-18 Sandia Corporation Silicon cells made by self-aligned selective-emitter plasma-etchback process
JP2000196118A (ja) * 1998-12-24 2000-07-14 Sanyo Electric Co Ltd 太陽電池の製造方法

Also Published As

Publication number Publication date
AU2003263592A8 (en) 2004-03-29
WO2004023567A3 (fr) 2005-01-13
WO2004023567A2 (fr) 2004-03-18
JP2004103736A (ja) 2004-04-02

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase