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AU2001253735A1 - Uv-enhanced silylation process to increase etch resistance of ultra thin resists - Google Patents

Uv-enhanced silylation process to increase etch resistance of ultra thin resists

Info

Publication number
AU2001253735A1
AU2001253735A1 AU2001253735A AU5373501A AU2001253735A1 AU 2001253735 A1 AU2001253735 A1 AU 2001253735A1 AU 2001253735 A AU2001253735 A AU 2001253735A AU 5373501 A AU5373501 A AU 5373501A AU 2001253735 A1 AU2001253735 A1 AU 2001253735A1
Authority
AU
Australia
Prior art keywords
enhanced
ultra thin
etch resistance
silylation process
increase etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001253735A
Inventor
Bryan K. Choo
Khoi A. Phan
Bharath Rangarajan
Bhanwar Singh
Ramkumar Subramanian
Michael K. Templeton
Sanjay K. Yedur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2001253735A1 publication Critical patent/AU2001253735A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU2001253735A 2000-05-01 2001-04-19 Uv-enhanced silylation process to increase etch resistance of ultra thin resists Abandoned AU2001253735A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/565,691 US6451512B1 (en) 2000-05-01 2000-05-01 UV-enhanced silylation process to increase etch resistance of ultra thin resists
US09/565,691 2000-05-01
US09565691 2000-05-01
PCT/US2001/012897 WO2001084599A2 (en) 2000-05-01 2001-04-19 Uv-enhanced silylation process to increase etch resistance of ultra thin resists

Publications (1)

Publication Number Publication Date
AU2001253735A1 true AU2001253735A1 (en) 2001-11-12

Family

ID=24259700

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001253735A Abandoned AU2001253735A1 (en) 2000-05-01 2001-04-19 Uv-enhanced silylation process to increase etch resistance of ultra thin resists

Country Status (6)

Country Link
US (3) US6451512B1 (en)
EP (1) EP1279072B1 (en)
AU (1) AU2001253735A1 (en)
DE (1) DE60106229T2 (en)
TW (1) TW498407B (en)
WO (1) WO2001084599A2 (en)

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US6451512B1 (en) * 2000-05-01 2002-09-17 Advanced Micro Devices, Inc. UV-enhanced silylation process to increase etch resistance of ultra thin resists
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FR2812450B1 (en) * 2000-07-26 2003-01-10 France Telecom RESIN, TWO-LAYER RESIN FOR EXTREME ULTRAVIOLET (EUV) PHOTOLITHOGRAPHY AND METHOD FOR EXTREME ULTRAVIOLET (EUV) PHOTOLITHOGRAPHY
JP2002163005A (en) * 2000-11-29 2002-06-07 Nikon Corp Control system design method, control system, control system adjustment method, and exposure method
US6605519B2 (en) * 2001-05-02 2003-08-12 Unaxis Usa, Inc. Method for thin film lift-off processes using lateral extended etching masks and device
TW495843B (en) * 2001-05-11 2002-07-21 Macronix Int Co Ltd Method for reducing photoresist roughness by crosslinking photoresist with deposited material
US7160671B2 (en) * 2001-06-27 2007-01-09 Lam Research Corporation Method for argon plasma induced ultraviolet light curing step for increasing silicon-containing photoresist selectivity
KR100480611B1 (en) * 2002-08-14 2005-03-31 삼성전자주식회사 Method for forming fine patterns of semiconductor device using vapor phase silylation
EP1588411A4 (en) * 2003-01-25 2008-10-01 Honeywell Int Inc REPAIR AND RESTORATION OF DIELECTRIC MATERIALS AND DIELECTRIC FILMS
US7709371B2 (en) * 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
KR100680944B1 (en) * 2003-05-27 2007-02-08 주식회사 하이닉스반도체 Manufacturing method of semiconductor device
US20040259371A1 (en) * 2003-06-18 2004-12-23 Zhijian Lu Reduction of resist defects
US7425505B2 (en) * 2003-07-23 2008-09-16 Fsi International, Inc. Use of silyating agents
US8475666B2 (en) * 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
US20050118541A1 (en) * 2003-11-28 2005-06-02 Applied Materials, Inc. Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes
CN100361275C (en) * 2004-10-12 2008-01-09 联华电子股份有限公司 Etching process and patterning process
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
US7442649B2 (en) * 2005-03-29 2008-10-28 Lam Research Corporation Etch with photoresist mask
US7309659B1 (en) 2005-04-01 2007-12-18 Advanced Micro Devices, Inc. Silicon-containing resist to pattern organic low k-dielectrics
US20070087951A1 (en) * 2005-10-19 2007-04-19 Hynix Semiconductor Inc. Thinner composition for inhibiting photoresist from drying
US20080008973A1 (en) * 2006-07-10 2008-01-10 Tomohiro Goto Substrate processing method and substrate processing apparatus
JP4999419B2 (en) * 2006-10-12 2012-08-15 東京エレクトロン株式会社 Substrate processing method, substrate processing system, and computer-readable storage medium
US7851138B2 (en) 2007-07-19 2010-12-14 Hitachi Global Storage Technologies, Netherlands, B.V. Patterning a surface comprising silicon and carbon
US20090174036A1 (en) * 2008-01-04 2009-07-09 International Business Machines Corporation Plasma curing of patterning materials for aggressively scaled features
JP5242508B2 (en) * 2009-06-26 2013-07-24 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
JP5424848B2 (en) * 2009-12-15 2014-02-26 株式会社東芝 Semiconductor substrate surface treatment apparatus and method
US8492170B2 (en) 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
US9291907B2 (en) 2012-05-18 2016-03-22 Micron Technology, Inc. Methods for forming resist features and arrays of aligned, elongate resist features
US8815752B2 (en) 2012-11-28 2014-08-26 Micron Technology, Inc. Methods of forming features in semiconductor device structures
KR20170038988A (en) 2015-09-30 2017-04-10 삼성디스플레이 주식회사 Silane coupling agent and method for manufacturing wire grid pattern using the same
CN111065967B (en) * 2017-09-29 2023-06-23 日本瑞翁株式会社 Positive resist composition, method for forming resist film, and method for producing laminate
US20190368040A1 (en) * 2018-06-01 2019-12-05 Asm Ip Holding B.V. Infiltration apparatus and methods of infiltrating an infiltrateable material
JP7446097B2 (en) * 2019-12-06 2024-03-08 東京応化工業株式会社 Surface treatment agent and surface treatment method
TWI830502B (en) * 2022-11-17 2024-01-21 家碩科技股份有限公司 A fixture that automatically measures the flow rate of the mask carrier

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Also Published As

Publication number Publication date
TW498407B (en) 2002-08-11
WO2001084599A3 (en) 2002-07-18
DE60106229D1 (en) 2004-11-11
US6746822B1 (en) 2004-06-08
DE60106229T2 (en) 2005-02-24
WO2001084599A2 (en) 2001-11-08
EP1279072A2 (en) 2003-01-29
US6451512B1 (en) 2002-09-17
EP1279072B1 (en) 2004-10-06
US6645702B1 (en) 2003-11-11

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