[go: up one dir, main page]

AU2001247263A1 - Memory cell, method of formation, and operation - Google Patents

Memory cell, method of formation, and operation

Info

Publication number
AU2001247263A1
AU2001247263A1 AU2001247263A AU4726301A AU2001247263A1 AU 2001247263 A1 AU2001247263 A1 AU 2001247263A1 AU 2001247263 A AU2001247263 A AU 2001247263A AU 4726301 A AU4726301 A AU 4726301A AU 2001247263 A1 AU2001247263 A1 AU 2001247263A1
Authority
AU
Australia
Prior art keywords
formation
memory cell
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001247263A
Inventor
Bo Jiang
Sucharita Madhukar
Ramachandran Muralidhar
David L. O'meara
Michael Alan Sadd
Srikanth B. Samavedam
Bruce E. White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001247263A1 publication Critical patent/AU2001247263A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/687—Floating-gate IGFETs having more than two programming levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/688—Floating-gate IGFETs programmed by two single electrons
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AU2001247263A 2000-03-14 2001-03-02 Memory cell, method of formation, and operation Abandoned AU2001247263A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09524916 2000-03-14
US09/524,916 US6320784B1 (en) 2000-03-14 2000-03-14 Memory cell and method for programming thereof
PCT/US2001/006842 WO2001069607A2 (en) 2000-03-14 2001-03-02 Memory cell, method of formation, and operation

Publications (1)

Publication Number Publication Date
AU2001247263A1 true AU2001247263A1 (en) 2001-09-24

Family

ID=24091168

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001247263A Abandoned AU2001247263A1 (en) 2000-03-14 2001-03-02 Memory cell, method of formation, and operation

Country Status (8)

Country Link
US (1) US6320784B1 (en)
EP (1) EP1269477B1 (en)
JP (1) JP2003527747A (en)
KR (1) KR100705301B1 (en)
AU (1) AU2001247263A1 (en)
DE (1) DE60117132T2 (en)
TW (1) TW493268B (en)
WO (1) WO2001069607A2 (en)

Families Citing this family (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
KR100545706B1 (en) * 2000-06-28 2006-01-24 주식회사 하이닉스반도체 Semiconductor device manufacturing method
US6400610B1 (en) * 2000-07-05 2002-06-04 Motorola, Inc. Memory device including isolated storage elements that utilize hole conduction and method therefor
US6602805B2 (en) * 2000-12-14 2003-08-05 Macronix International Co., Ltd. Method for forming gate dielectric layer in NROM
KR100455282B1 (en) * 2001-01-11 2004-11-08 삼성전자주식회사 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
US20020102797A1 (en) * 2001-02-01 2002-08-01 Muller David A. Composite gate dielectric layer
US6531731B2 (en) * 2001-06-15 2003-03-11 Motorola, Inc. Integration of two memory types on the same integrated circuit
US6455890B1 (en) * 2001-09-05 2002-09-24 Macronix International Co., Ltd. Structure of fabricating high gate performance for NROM technology
US6656792B2 (en) * 2001-10-19 2003-12-02 Chartered Semiconductor Manufacturing Ltd Nanocrystal flash memory device and manufacturing method therefor
US6956262B1 (en) 2001-12-21 2005-10-18 Synopsys Inc. Charge trapping pull up element
US7453083B2 (en) 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6750066B1 (en) * 2002-04-08 2004-06-15 Advanced Micro Devices, Inc. Precision high-K intergate dielectric layer
US7105425B1 (en) * 2002-05-16 2006-09-12 Advanced Micro Devices, Inc. Single electron devices formed by laser thermal annealing
US7154140B2 (en) * 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US6804136B2 (en) 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US7193893B2 (en) 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US7095659B2 (en) 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6912151B2 (en) 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US7098472B2 (en) 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6864104B2 (en) 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6847562B2 (en) 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7847344B2 (en) * 2002-07-08 2010-12-07 Micron Technology, Inc. Memory utilizing oxide-nitride nanolaminates
US7221017B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US6690059B1 (en) 2002-08-22 2004-02-10 Atmel Corporation Nanocrystal electron device
US6808986B2 (en) * 2002-08-30 2004-10-26 Freescale Semiconductor, Inc. Method of forming nanocrystals in a memory device
US7259984B2 (en) * 2002-11-26 2007-08-21 Cornell Research Foundation, Inc. Multibit metal nanocrystal memories and fabrication
US6979580B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6980467B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US7012833B2 (en) 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6806117B2 (en) 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6812084B2 (en) 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US6849483B2 (en) 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US7005711B2 (en) 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
KR100526463B1 (en) * 2003-05-07 2005-11-08 매그나칩 반도체 유한회사 Method for manufacturing semiconductor device
US7045851B2 (en) * 2003-06-20 2006-05-16 International Business Machines Corporation Nonvolatile memory device using semiconductor nanocrystals and method of forming same
DE10336876B4 (en) * 2003-08-11 2006-08-24 Infineon Technologies Ag Memory cell with nanocrystals or nanodots and process for their preparation
US6958265B2 (en) * 2003-09-16 2005-10-25 Freescale Semiconductor, Inc. Semiconductor device with nanoclusters
JP4072621B2 (en) * 2003-10-23 2008-04-09 国立大学法人名古屋大学 Silicon nanocrystal fabrication method and floating gate type memory capacitor structure fabrication method
TWI276206B (en) * 2003-11-25 2007-03-11 Promos Technologies Inc Method for fabricating flash memory device and structure thereof
KR100601943B1 (en) * 2004-03-04 2006-07-14 삼성전자주식회사 Method for manufacturing a memory device having a gate containing evenly distributed silicon nano dots
US7501315B2 (en) * 2004-06-08 2009-03-10 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8563133B2 (en) * 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7968273B2 (en) 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7091130B1 (en) 2004-06-25 2006-08-15 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
US7091089B2 (en) * 2004-06-25 2006-08-15 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
US7160775B2 (en) * 2004-08-06 2007-01-09 Freescale Semiconductor, Inc. Method of discharging a semiconductor device
KR100615093B1 (en) * 2004-08-24 2006-08-22 삼성전자주식회사 Method of manufacturing nonvolatile memory device having nanocrystal
US7430137B2 (en) * 2004-09-09 2008-09-30 Actel Corporation Non-volatile memory cells in a field programmable gate array
US7098505B1 (en) 2004-09-09 2006-08-29 Actel Corporation Memory device with multiple memory layers of local charge storage
US7301197B2 (en) * 2004-09-21 2007-11-27 Atmel Corporation Non-volatile nanocrystal memory transistors using low voltage impact ionization
US7518179B2 (en) 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
US7361543B2 (en) * 2004-11-12 2008-04-22 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
US20060140009A1 (en) * 2004-12-23 2006-06-29 Bohumil Lojek Programming method for nanocrystal memory device
US7183159B2 (en) * 2005-01-14 2007-02-27 Freescale Semiconductor, Inc. Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices
US7338894B2 (en) * 2005-01-26 2008-03-04 Freescale Semiconductor, Inc. Semiconductor device having nitridated oxide layer and method therefor
US7361567B2 (en) * 2005-01-26 2008-04-22 Freescale Semiconductor, Inc. Non-volatile nanocrystal memory and method therefor
KR100682932B1 (en) 2005-02-16 2007-02-15 삼성전자주식회사 Nonvolatile Memory Device and Manufacturing Method Thereof
US20060199335A1 (en) * 2005-03-04 2006-09-07 Freescale Semiconductor, Inc. Electronic devices including non-volatile memory structures and processes for forming the same
US20060231889A1 (en) * 2005-04-13 2006-10-19 Tupei Chen Two-terminal solid-state memory device and two-terminal flexible memory device based on nanocrystals or nanoparticles
US7161831B2 (en) * 2005-06-10 2007-01-09 Macronix International Co., Ltd. Leaf plot analysis technique for multiple-side operated devices
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7226840B2 (en) * 2005-07-25 2007-06-05 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7205608B2 (en) * 2005-07-25 2007-04-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7211487B2 (en) * 2005-07-25 2007-05-01 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7250340B2 (en) * 2005-07-25 2007-07-31 Freescale Semiconductor, Inc. Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7256454B2 (en) * 2005-07-25 2007-08-14 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements and a process for forming the same
US7394686B2 (en) * 2005-07-25 2008-07-01 Freescale Semiconductor, Inc. Programmable structure including discontinuous storage elements and spacer control gates in a trench
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US20070020840A1 (en) * 2005-07-25 2007-01-25 Freescale Semiconductor, Inc. Programmable structure including nanocrystal storage elements in a trench
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7314798B2 (en) * 2005-07-25 2008-01-01 Freescale Semiconductor, Inc. Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7285819B2 (en) * 2005-07-25 2007-10-23 Freescale Semiconductor, Inc. Nonvolatile storage array with continuous control gate employing hot carrier injection programming
KR100690925B1 (en) * 2005-12-01 2007-03-09 삼성전자주식회사 Nano Crystal Nonvolatile Semiconductor Integrated Circuit Device and Manufacturing Method Thereof
US20070158734A1 (en) * 2006-01-09 2007-07-12 Freescale Semiconductor, Inc. Electronic device with a multi-gated electrode structure and a process for forming the electronic device
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7767588B2 (en) * 2006-02-28 2010-08-03 Freescale Semiconductor, Inc. Method for forming a deposited oxide layer
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
KR100735534B1 (en) * 2006-04-04 2007-07-04 삼성전자주식회사 Nano Crystal Nonvolatile Semiconductor Integrated Circuit Device and Manufacturing Method Thereof
KR100785015B1 (en) * 2006-05-18 2007-12-12 삼성전자주식회사 Nonvolatile memory device having silicon nanocrystal as floating gate and manufacturing method thereof
US7432158B1 (en) 2006-07-25 2008-10-07 Freescale Semiconductor, Inc. Method for retaining nanocluster size and electrical characteristics during processing
US7445984B2 (en) 2006-07-25 2008-11-04 Freescale Semiconductor, Inc. Method for removing nanoclusters from selected regions
US7667260B2 (en) * 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
KR100779566B1 (en) * 2006-12-08 2007-11-28 한양대학교 산학협력단 Nano floating gate type nonvolatile semiconductor memory device and manufacturing method thereof
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7651916B2 (en) 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
JP4854591B2 (en) * 2007-05-14 2012-01-18 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
KR100929397B1 (en) * 2007-11-21 2009-12-02 한양대학교 산학협력단 Nonvolatile Memory Device Using Silicon Carbide Nanoparticles and Manufacturing Method Thereof
US8067803B2 (en) 2008-10-16 2011-11-29 Micron Technology, Inc. Memory devices, transistor devices and related methods
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals
US7871886B2 (en) * 2008-12-19 2011-01-18 Freescale Semiconductor, Inc. Nanocrystal memory with differential energy bands and method of formation
CN103283031B (en) * 2010-09-22 2016-08-17 第一太阳能有限公司 Comprise the photovoltaic devices in n-type dopant source
FR2971618B1 (en) * 2011-02-11 2015-07-31 Commissariat Energie Atomique METHOD FOR OBTAINING A NETWORK OF NANOMETERIC PLOTS
CN103515206B (en) * 2012-06-19 2016-03-16 中芯国际集成电路制造(上海)有限公司 A kind of preparation method of nano-quantum point floating boom
CN103236400B (en) * 2013-03-29 2015-07-08 京东方科技集团股份有限公司 Production method of low-temperature polysilicon thin film and production method of thin-film transistor
US9634105B2 (en) 2015-01-14 2017-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon nano-tip thin film for flash memory cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62204955A (en) * 1986-03-05 1987-09-09 Minolta Camera Co Ltd Character image generation circuit
JPS63237580A (en) * 1987-03-26 1988-10-04 Toshiba Corp Semiconductor device and manufacture of the same
DE69123782T2 (en) * 1990-05-22 1997-07-10 Nippon Electric Co Programmable, high-speed, non-volatile read only memory device fabricated using selective doping technology
US5446286A (en) * 1994-08-11 1995-08-29 Bhargava; Rameshwar N. Ultra-fast detectors using doped nanocrystal insulators
DE19534778C1 (en) * 1995-09-19 1997-04-03 Siemens Ag Method for generating the source areas of a flash EEPROM memory cell array
US5714766A (en) 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
FR2757307B1 (en) * 1996-12-13 1999-02-26 Sgs Thomson Microelectronics FOUR STATE MEMORY CELL
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
FR2772989B1 (en) * 1997-12-19 2003-06-06 Commissariat Energie Atomique MULTINIVE MEMORY DEVICE WITH COULOMB BLOCKING, MANUFACTURING METHOD AND METHOD OF READING / WRITING / ERASING SUCH A DEVICE

Also Published As

Publication number Publication date
WO2001069607A3 (en) 2002-03-21
US6320784B1 (en) 2001-11-20
KR100705301B1 (en) 2007-04-11
KR20020092383A (en) 2002-12-11
WO2001069607A2 (en) 2001-09-20
DE60117132T2 (en) 2006-07-13
EP1269477B1 (en) 2006-02-08
TW493268B (en) 2002-07-01
DE60117132D1 (en) 2006-04-20
EP1269477A2 (en) 2003-01-02
JP2003527747A (en) 2003-09-16

Similar Documents

Publication Publication Date Title
AU2001247263A1 (en) Memory cell, method of formation, and operation
AU2002338242A1 (en) Memory cell arrays and method for the production thereof
AU2002251705A1 (en) Method of reducing disturbs in non-volatile memory
AU2002230746A1 (en) Thin, high capacity absorbent structure and method for producing same
AU2003245588A1 (en) Multiple-mode memory and method for forming same
AU2002234076A1 (en) Construction composition, structure, and method
AU782917C (en) Cell division inhibitors and process for producing the same
AU2001280941A1 (en) Non-volatile memory, method of manufacture and programming
AU2001245337A1 (en) Electrical cells, components and methods
AU2001277255A1 (en) Write-once memory array controller, system, and method
AU2001242125A1 (en) An improved high density memory cell
AU2001268657A1 (en) Multilevel memory access method
AU2002223126A1 (en) Enclosed nickel-zinc primary battery, its anode and production methods for them
MXPA03001223A (en) Memory cell, memory cell device and method for the production thereof.
AU2001247638A1 (en) Flat, bonded-electrode rechargeable electrochemical cell and method of making same
AU2001277718A1 (en) Method for manufacturing solar cell and solar cell
AU4455601A (en) Hole structure and production method for hole structure
AU2001264134A1 (en) Microconnectors and method for their production
AU2001296414A1 (en) Tungsten-containing fuel cell catalyst and method of making same
AU7332800A (en) Card construction, methods of making and using
AU2001229770A1 (en) Improved research and development process
AU2001292710A1 (en) Well packer and method
AU2003289813A1 (en) Method for the production of a memory cell, memory cell and memory cell arrangement
AU2001294010A1 (en) Stem cells
AU2001277799A1 (en) Probe, probe card and probe manufacturing method