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NO20091339L - Fremgangsmate og anordning for rensing av lavkvalitets silisiummateriale - Google Patents

Fremgangsmate og anordning for rensing av lavkvalitets silisiummateriale

Info

Publication number
NO20091339L
NO20091339L NO20091339A NO20091339A NO20091339L NO 20091339 L NO20091339 L NO 20091339L NO 20091339 A NO20091339 A NO 20091339A NO 20091339 A NO20091339 A NO 20091339A NO 20091339 L NO20091339 L NO 20091339L
Authority
NO
Norway
Prior art keywords
silicon material
purity silicon
melting
melt
melting device
Prior art date
Application number
NO20091339A
Other languages
English (en)
Inventor
Dominic Leblanc
Rene Boisvert
Original Assignee
Silicium Becancour Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicium Becancour Inc filed Critical Silicium Becancour Inc
Publication of NO20091339L publication Critical patent/NO20091339L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
    • F27B7/06—Rotary-drum furnaces, i.e. horizontal or slightly inclined adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
    • F27B7/20—Details, accessories or equipment specially adapted for rotary-drum furnaces
    • F27B7/2083—Arrangements for the melting of metals or the treatment of molten metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Det beskrives en fremgangsmåte og anordning for rensing av lavrenhets silisium-materiale slik at det oppnås et silisium-materiale med høyere renhet. Fremgangsmåten innbefatter tilveiebringelse av en smelteanordning med en oksygenbrensel-brenner og smelting av lavrenhetssilisiummaterialet i smelteanordningen for derved å få frem en smelte av silisiummateriale med høyere renhet. Smelteanordningen kan innbefatte en roterende trommelovn og smeltingen av lavrenhetssilisiummaterialet kan gjennomføres ved en temperatur i området fra 1410 °C til 1700 °C i en oksiderende eller reduserende atmosfære. Et syntetisk slagg kan tilsettes det smeltede materialet under smeltingen. Smelten av silisiummateriale med høy renhet kan separeres fra et slagg ved at smelten helles over i en form som har en åpen topp, en isolert bunn og sidevegger. I formen kan smelten av silisiummateriale med høy renhet underkastes en kontrollert og ensrettet størkning for oppnåelse av et fast og polykrystallinsk silisium som har en enda høyere renhet.
NO20091339A 2006-09-14 2009-03-31 Fremgangsmate og anordning for rensing av lavkvalitets silisiummateriale NO20091339L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84437206P 2006-09-14 2006-09-14
PCT/CA2007/001646 WO2008031229A1 (en) 2006-09-14 2007-09-13 Process and apparatus for purifying low-grade silicon material

Publications (1)

Publication Number Publication Date
NO20091339L true NO20091339L (no) 2009-03-31

Family

ID=39183328

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20091339A NO20091339L (no) 2006-09-14 2009-03-31 Fremgangsmate og anordning for rensing av lavkvalitets silisiummateriale

Country Status (17)

Country Link
US (1) US20080253955A1 (no)
EP (1) EP2074060A4 (no)
JP (1) JP2010503596A (no)
KR (1) KR20090053807A (no)
CN (1) CN101511731B (no)
AU (1) AU2007295860A1 (no)
BR (1) BRPI0716934A2 (no)
CA (1) CA2660386C (no)
EA (1) EA015387B1 (no)
EG (1) EG25136A (no)
GE (1) GEP20115178B (no)
IL (1) IL197472A0 (no)
MX (1) MX2009002808A (no)
NO (1) NO20091339L (no)
UA (1) UA97488C2 (no)
WO (1) WO2008031229A1 (no)
ZA (1) ZA200900898B (no)

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CN106744970B (zh) * 2016-12-09 2020-01-31 成都斯力康科技股份有限公司 一种利用感应炉熔硅的铝锭起炉工艺
CN107055545B (zh) * 2016-12-09 2019-01-25 成都斯力康科技股份有限公司 一种利用硅粉进行熔炼生产硅锭的工艺
CN106744978B (zh) * 2016-12-09 2019-03-12 成都斯力康科技股份有限公司 一种利用硅渣进行熔炼生产硅锭的工艺
TWI619855B (zh) * 2016-12-21 2018-04-01 Sun Wen Bin 分凝提純高純矽之方法
CN109133069A (zh) * 2018-11-19 2019-01-04 成都斯力康科技股份有限公司 精炼法提纯工业硅的工艺及设备
JP7528548B2 (ja) 2020-06-05 2024-08-06 トヨタ自動車株式会社 活物質、電池およびこれらの製造方法
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Also Published As

Publication number Publication date
MX2009002808A (es) 2009-03-31
EG25136A (en) 2011-09-25
ZA200900898B (en) 2010-06-30
AU2007295860A1 (en) 2008-03-20
GEP20115178B (en) 2011-03-10
BRPI0716934A2 (pt) 2013-09-17
EP2074060A1 (en) 2009-07-01
EP2074060A4 (en) 2015-12-23
WO2008031229A1 (en) 2008-03-20
CA2660386C (en) 2012-05-01
UA97488C2 (ru) 2012-02-27
EA200970275A1 (ru) 2009-10-30
JP2010503596A (ja) 2010-02-04
EA015387B1 (ru) 2011-08-30
CN101511731B (zh) 2012-02-22
AU2007295860A2 (en) 2009-05-14
CN101511731A (zh) 2009-08-19
KR20090053807A (ko) 2009-05-27
IL197472A0 (en) 2009-12-24
CA2660386A1 (en) 2008-03-20
US20080253955A1 (en) 2008-10-16

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Legal Events

Date Code Title Description
CHAD Change of the owner's name or address (par. 44 patent law, par. patentforskriften)

Owner name: SILICIO FERROSOLAR, S.L.U., ES

FC2A Withdrawal, rejection or dismissal of laid open patent application