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NO20081902L - Metode av produsering sol-grad polysilisium metallbarre med relevantee induksjonsapparat - Google Patents

Metode av produsering sol-grad polysilisium metallbarre med relevantee induksjonsapparat

Info

Publication number
NO20081902L
NO20081902L NO20081902A NO20081902A NO20081902L NO 20081902 L NO20081902 L NO 20081902L NO 20081902 A NO20081902 A NO 20081902A NO 20081902 A NO20081902 A NO 20081902A NO 20081902 L NO20081902 L NO 20081902L
Authority
NO
Norway
Prior art keywords
temperature
solar grade
grade polysilicon
induction apparatus
metal bars
Prior art date
Application number
NO20081902A
Other languages
English (en)
Inventor
Zhi-Yi Su
Yong-Qiang Hong
Ji-Rong Yang
Original Assignee
Jaco Solarsi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jaco Solarsi Ltd filed Critical Jaco Solarsi Ltd
Publication of NO20081902L publication Critical patent/NO20081902L/no

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D7/00—Casting ingots, e.g. from ferrous metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/90—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
    • Y02A40/963—Off-grid food refrigeration
    • Y02A40/966—Powered by renewable energy sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

Den aktuelle oppfinnelsen angår en metode til å produsere en solar-grad polysilisium ingot med redusert energiforbruk og kostnader og med høyt utbytte av støpningsingot uten komplisert utstyr. Det inkluderer smelting av silisiumråmateriale, behandling med slagg for eliminering av metallurenheter og vanndamp for fjerning av B, deretter oppvarme til 1500-1700 ºC, på forhånd oppvarme en smelteovn med grafittdigel til en temperatur av 1000-1400 ºC, helle den rene smelten deri og kontrollere temperaturen til 1450-1600 ºC, deretter justere temperaturen til l400-l430º C, redusere temperaturen til 1000-1200 ºC, avkjøle til 200-400 ºC, og naturlig avkjøle for å fremstille produktet.
NO20081902A 2007-07-17 2008-04-21 Metode av produsering sol-grad polysilisium metallbarre med relevantee induksjonsapparat NO20081902L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200710009238A CN100595352C (zh) 2007-07-17 2007-07-17 太阳能级多晶硅大锭的制备方法

Publications (1)

Publication Number Publication Date
NO20081902L true NO20081902L (no) 2009-01-19

Family

ID=38991172

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20081902A NO20081902L (no) 2007-07-17 2008-04-21 Metode av produsering sol-grad polysilisium metallbarre med relevantee induksjonsapparat

Country Status (9)

Country Link
US (1) US20090020067A1 (no)
CN (1) CN100595352C (no)
BR (1) BRPI0801205A2 (no)
CA (1) CA2633964A1 (no)
DE (1) DE102008033346A1 (no)
FR (1) FR2918999A1 (no)
IT (1) IT1391029B1 (no)
NO (1) NO20081902L (no)
RU (1) RU2008128526A (no)

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KR100861287B1 (ko) * 2008-01-25 2008-10-01 한국생산기술연구원 실리콘 분말을 이용하여 실리콘 성형체를 제조하는 방법 및 장치
CN101792143B (zh) * 2010-03-24 2011-12-21 姜学昭 提纯硅的方法
CN102094238A (zh) * 2010-09-28 2011-06-15 常州天合光能有限公司 降低铸锭多晶体内应力缺陷的方法
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
US20130252011A1 (en) * 2011-09-14 2013-09-26 MEMC Singapore, Pte. Ltd. (UEN200614797D) Multi-Crystalline Silicon Ingot And Directional Solidification Furnace
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
JP5135467B1 (ja) * 2011-12-22 2013-02-06 シャープ株式会社 多結晶シリコンインゴットの製造方法
EP2864529A1 (en) * 2012-06-25 2015-04-29 Silicor Materials Inc. Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification
CN103072996B (zh) * 2013-02-04 2014-09-10 福建兴朝阳硅材料股份有限公司 一种电泳辅助的太阳能级多晶硅提纯方法
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
CN103395789B (zh) * 2013-08-06 2015-05-06 青岛隆盛晶硅科技有限公司 多晶硅介质熔炼后初步定向凝固工艺
EP3247504B1 (fr) 2015-01-23 2018-12-19 Jacques Gerbron Dispositif de délivrance d'un produit par pulvérisation
RU2631372C1 (ru) * 2016-04-04 2017-09-21 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Способ получения кремниевых мишеней для магнетронного распыления
CN109319744A (zh) * 2017-07-31 2019-02-12 成都中建材光电材料有限公司 一种4n碲的制备方法
CN109052407A (zh) * 2018-08-22 2018-12-21 昆明理工大学 一种硅切割废料的回收与提纯方法
CN109292779A (zh) * 2018-10-19 2019-02-01 东北大学 一种用高硅废料造渣精炼生产高纯硅/硅合金的方法
CN109321975B (zh) * 2018-11-19 2020-09-08 永平县泰达废渣开发利用有限公司 单晶硅定向凝固引晶模块

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US4195067A (en) * 1977-11-21 1980-03-25 Union Carbide Corporation Process for the production of refined metallurgical silicon
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CN1083396C (zh) * 1995-07-14 2002-04-24 昭和电工株式会社 高纯度硅的制造方法
CN1143605A (zh) * 1995-08-22 1997-02-26 李忠莆 精炼硅生产工艺
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CN1299983C (zh) * 2003-07-22 2007-02-14 龚炳生 光电级硅的制造方法
JP4632769B2 (ja) * 2004-12-09 2011-02-16 シャープ株式会社 シリコンの精製方法
JP4689373B2 (ja) * 2005-07-04 2011-05-25 シャープ株式会社 シリコンの再利用方法

Also Published As

Publication number Publication date
IT1391029B1 (it) 2011-10-27
DE102008033346A1 (de) 2009-05-07
CN100595352C (zh) 2010-03-24
BRPI0801205A2 (pt) 2010-04-20
FR2918999A1 (fr) 2009-01-23
CN101092741A (zh) 2007-12-26
CA2633964A1 (en) 2009-01-17
ITTO20080540A1 (it) 2009-01-18
US20090020067A1 (en) 2009-01-22
RU2008128526A (ru) 2010-01-20

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