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MY166908A - HIGH PURITY Cu BONDING WIRE - Google Patents

HIGH PURITY Cu BONDING WIRE

Info

Publication number
MY166908A
MY166908A MYPI2012700686A MYPI2012700686A MY166908A MY 166908 A MY166908 A MY 166908A MY PI2012700686 A MYPI2012700686 A MY PI2012700686A MY PI2012700686 A MYPI2012700686 A MY PI2012700686A MY 166908 A MY166908 A MY 166908A
Authority
MY
Malaysia
Prior art keywords
high purity
bonding wire
hardness
ball
recrystallization temperature
Prior art date
Application number
MYPI2012700686A
Other languages
English (en)
Inventor
Tsutomu Yamashita
Takeshi Kuwahara
Junichi Okazaki
Original Assignee
Tanaka Densi Kogyo K K
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Densi Kogyo K K filed Critical Tanaka Densi Kogyo K K
Publication of MY166908A publication Critical patent/MY166908A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
    • H01L2224/48511—Heat affected zone [HAZ]
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
MYPI2012700686A 2010-03-25 2010-03-25 HIGH PURITY Cu BONDING WIRE MY166908A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/055281 WO2011118009A1 (ja) 2010-03-25 2010-03-25 高純度Ｃｕボンディングワイヤ

Publications (1)

Publication Number Publication Date
MY166908A true MY166908A (en) 2018-07-24

Family

ID=44672600

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012700686A MY166908A (en) 2010-03-25 2010-03-25 HIGH PURITY Cu BONDING WIRE

Country Status (4)

Country Link
KR (1) KR101280053B1 (ja)
MY (1) MY166908A (ja)
SG (1) SG184233A1 (ja)
WO (1) WO2011118009A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5998758B2 (ja) 2012-08-31 2016-09-28 三菱マテリアル株式会社 荒引銅線及び巻線、並びに、荒引銅線の製造方法
JP5680773B1 (ja) * 2014-01-29 2015-03-04 千住金属工業株式会社 Ｃｕ核ボール、はんだ継手、フォームはんだおよびはんだペースト
KR20160111006A (ko) 2014-02-04 2016-09-23 센주긴조쿠고교 가부시키가이샤 Cu 볼, Cu 핵 볼, 납땜 조인트, 땜납 페이스트 및 폼 땜납
JP6361194B2 (ja) 2014-03-14 2018-07-25 三菱マテリアル株式会社 銅鋳塊、銅線材、及び、銅鋳塊の製造方法
WO2016189752A1 (ja) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
KR101688080B1 (ko) * 2015-09-09 2016-12-20 앰코 테크놀로지 코리아 주식회사 반도체 패키지
CN109763015A (zh) * 2019-03-25 2019-05-17 杭州辰卓科技有限公司 一种电子封装用阻尼型高导热耐脆断银键合线用材料

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290231A (ja) * 1988-05-18 1989-11-22 Mitsubishi Metal Corp 半導体装置用銅合金極細線及び半導体装置
JPH01291435A (ja) * 1988-05-18 1989-11-24 Mitsubishi Metal Corp 半導体装置用銅合金極細線及び半導体装置
JP2004064033A (ja) 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
US7820913B2 (en) * 2005-01-05 2010-10-26 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
KR100702662B1 (ko) 2005-02-18 2007-04-02 엠케이전자 주식회사 반도체 패키징용 구리 본딩 와이어
JP4349641B1 (ja) * 2009-03-23 2009-10-21 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ

Also Published As

Publication number Publication date
KR101280053B1 (ko) 2013-06-28
WO2011118009A1 (ja) 2011-09-29
KR20130004912A (ko) 2013-01-14
SG184233A1 (en) 2012-10-30
CN102859672A (zh) 2013-01-02

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