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MY149475A - Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics - Google Patents

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

Info

Publication number
MY149475A
MY149475A MYPI20090622A MY149475A MY 149475 A MY149475 A MY 149475A MY PI20090622 A MYPI20090622 A MY PI20090622A MY 149475 A MY149475 A MY 149475A
Authority
MY
Malaysia
Prior art keywords
stretchable
semiconductors
nanomembranes
electronic circuits
stretchable electronics
Prior art date
Application number
Inventor
John A Rogers
Ralph G Nuzzo
Lee Keon Jae
Kang Jun Seong
Zhu Zhengtao
Menard Etienne
Ahn Jong-Hyun
Kim Hoon-Sik
Khang Dahl-Young
Meitl Matthew
Sun Yugang
Ko Heung Cho
Carlson Andrew
Choi Won Mook
Stoykovich Mark
Jiang Hanqing
Huang Yonggang
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of MY149475A publication Critical patent/MY149475A/en

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    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857Multilayer substrates
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    • H10D88/00Three-dimensional [3D] integrated devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067Mechanical properties
    • B81B3/0078Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H10D30/47FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
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    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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    • H10D62/881Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
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Abstract

IN AN ASPECT, THE PRESENT INVENTION PROVIDES STRETCHABLE, AND OPTIONALLY PRINTABLE, COMPONENTS SUCH AS SEMICONDUCTORS AND ELECTRONIC CIRCUITS CAPABLE OF PROVIDING GOOD PERFORMANCE WHEN STRETCHED, COMPRESSED, FLEXED OR OTHERWISE DEFORMED, AND RELATE METHODS OF MAKING OR TUNING SUCH STRETCHABLE COMPONENTS. STRETCHABLE SEMICONDUCTORS AND ELECTRONIC CIRCUITS PREFERRED FOR SOME APPLICATIONS ARE FLEXIBLE, IN ADDITION TO BEING STRETCHABLE, AND THUS ARE CAPABLE OF SIGNIFICANT ELONGATION, FLEXING, BENDING OR OTHER DEFORMATION ALONG ONE OR MORE AXES. FURTHER, STRETCHABLE SEMICONDUCTORS AND ELECTRONIC CIRCUITS OF THE PRESENT INVENTION ARE ADAPTED TO A WIDE RANGE OF DEVICE CONFIGURATIONS TO PROVIDE FULLY FLEXIBLE ELECTRONIC AND OPTOELECTRONIC DEVICES.
MYPI20090622 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics MY149475A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82468306P 2006-09-06 2006-09-06
US94462607P 2007-06-18 2007-06-18

Publications (1)

Publication Number Publication Date
MY149475A true MY149475A (en) 2013-08-30

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MYPI2012005126A MY172115A (en) 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
MYPI20090622 MY149475A (en) 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

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