MXPA05011570A - Control o formacion de modelo de un proceso de infiltracion quomica en fase de vapor para densificar con carbon substratos porosos. - Google Patents
Control o formacion de modelo de un proceso de infiltracion quomica en fase de vapor para densificar con carbon substratos porosos.Info
- Publication number
- MXPA05011570A MXPA05011570A MXPA05011570A MXPA05011570A MXPA05011570A MX PA05011570 A MXPA05011570 A MX PA05011570A MX PA05011570 A MXPA05011570 A MX PA05011570A MX PA05011570 A MXPA05011570 A MX PA05011570A MX PA05011570 A MXPA05011570 A MX PA05011570A
- Authority
- MX
- Mexico
- Prior art keywords
- oven
- measured
- admitted
- carbon
- gaseous phase
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000000280 densification Methods 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910052799 carbon Inorganic materials 0.000 title 1
- 230000008595 infiltration Effects 0.000 title 1
- 238000001764 infiltration Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 239000012808 vapor phase Substances 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 3
- 239000007792 gaseous phase Substances 0.000 abstract 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract 1
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- 150000001361 allenes Chemical class 0.000 abstract 1
- 239000007833 carbon precursor Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
- C04B35/83—Carbon fibres in a carbon matrix
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B1/00—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Structural Engineering (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Carbon And Carbon Compounds (AREA)
- Treating Waste Gases (AREA)
- Food Preservation Except Freezing, Refrigeration, And Drying (AREA)
- Porous Artificial Stone Or Porous Ceramic Products (AREA)
Abstract
Se calienta una carga que comprende uno o mas substratos porosos (10) para densificarlos, en un horno dentro del cual se admite un gas de reaccion que contiene por lo menos un hidrocarburo precursor de carbon; extrayendose el gas efluente del horno a traves de un tubo de extraccion (26), conectado a una salida del horno. Se mide en el gas efluente el contenido de por lo menos un compuesto seleccionado del aleno, propino y benceno, y como funcion del contenido medido, se controla el proceso ajustando por lo menos un parametro seleccionado de: la velocidad a la que es admitido el gas de reaccion dentro del horno; la velocidad a la que es admitido dentro del horno por lo menos un componente del gas de reaccion; el tiempo de transito del gas a traves del horno, la temperatura a la que se calienta(n) el substrato o los substratos, y la presion que existe dentro del horno. Se ajusta el al menos un parametro de tal manera que se mantenga el contenido medido a un valor que sea sustancialmente constante. De esa manera se puede controlar en tiempo real un proceso de densificacion, o se puede formar el modelo.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0305194A FR2854168B1 (fr) | 2003-04-28 | 2003-04-28 | Commande ou modelisation de procede d'infiltration chimique en phase vapeur pour la densification de substrats poreux par du carbone |
| PCT/FR2004/001009 WO2004097065A2 (fr) | 2003-04-28 | 2004-04-27 | Commande ou modelisation de procede d'infiltration chimique en phase vapeur pour la densification de substrats poreux par du carbone. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MXPA05011570A true MXPA05011570A (es) | 2005-12-15 |
Family
ID=33104451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MXPA05011570A MXPA05011570A (es) | 2003-04-28 | 2004-04-27 | Control o formacion de modelo de un proceso de infiltracion quomica en fase de vapor para densificar con carbon substratos porosos. |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US7727591B2 (es) |
| EP (1) | EP1620577B1 (es) |
| JP (1) | JP4546459B2 (es) |
| KR (1) | KR101179769B1 (es) |
| CN (1) | CN1777692B (es) |
| AT (1) | ATE521729T1 (es) |
| BR (1) | BRPI0409674A (es) |
| CA (1) | CA2523927C (es) |
| FR (1) | FR2854168B1 (es) |
| IL (1) | IL171439A (es) |
| MX (1) | MXPA05011570A (es) |
| RU (1) | RU2347009C2 (es) |
| TW (1) | TWI352132B (es) |
| UA (1) | UA89025C2 (es) |
| WO (1) | WO2004097065A2 (es) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8057855B1 (en) | 2005-05-31 | 2011-11-15 | Goodrich Corporation | Non-pressure gradient single cycle CVI/CVD apparatus and method |
| US7691443B2 (en) * | 2005-05-31 | 2010-04-06 | Goodrich Corporation | Non-pressure gradient single cycle CVI/CVD apparatus and method |
| US20070184179A1 (en) * | 2006-02-09 | 2007-08-09 | Akshay Waghray | Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc |
| US7959973B2 (en) * | 2006-11-29 | 2011-06-14 | Honeywell International Inc. | Pressure swing CVI/CVD |
| US8383197B2 (en) * | 2009-05-28 | 2013-02-26 | Honeywell International Inc. | Titanium carbide or tungsten carbide with combustion synthesis to block porosity in C-C brake discs for antioxidation protection |
| US20110033623A1 (en) * | 2009-08-05 | 2011-02-10 | Honeywell International Inc. | Method of preventing carbon friction material anti oxidation system migration by utilizing carbon vapor deposition |
| AU2012271612B2 (en) * | 2011-06-16 | 2017-08-31 | Zimmer, Inc. | Chemical vapor infiltration apparatus and process |
| RU2505620C1 (ru) * | 2012-05-17 | 2014-01-27 | Виктор Николаевич Кондратьев | Способ получения пироуглерода с трехмерно-ориентированной структурой на углеродном изделии |
| US11326255B2 (en) * | 2013-02-07 | 2022-05-10 | Uchicago Argonne, Llc | ALD reactor for coating porous substrates |
| US11499230B2 (en) | 2014-08-18 | 2022-11-15 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
| US10167555B2 (en) | 2014-08-18 | 2019-01-01 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
| WO2016028693A1 (en) * | 2014-08-18 | 2016-02-25 | Dynetics, Inc. | Method and apparatus for fabricating fibers and microstructures from disparate molar mass precursors |
| US10648075B2 (en) * | 2015-03-23 | 2020-05-12 | Goodrich Corporation | Systems and methods for chemical vapor infiltration and densification of porous substrates |
| WO2017033053A1 (en) | 2015-08-21 | 2017-03-02 | Flisom Ag | Homogeneous linear evaporation source |
| TWI624554B (zh) * | 2015-08-21 | 2018-05-21 | 弗里松股份有限公司 | 蒸發源 |
| US10131985B2 (en) | 2016-03-21 | 2018-11-20 | Goodrich Corporation | System and method for enhancing a diffusion limited CVI/CVD process |
| KR102570397B1 (ko) | 2016-05-11 | 2023-08-24 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 및 그 제조 방법 |
| RU2658858C2 (ru) * | 2016-08-31 | 2018-06-25 | Акционерное общество "Уральский научно-исследовательский институт композиционных материалов" (АО "УНИИКМ") | Углерод-углеродный композиционный материал и способ изготовления из него изделий |
| RU2667403C2 (ru) * | 2016-08-31 | 2018-09-19 | Акционерное общество "Уральский научно-исследовательский институт композиционных материалов" (АО "УНИИКМ") | Углерод-углеродный композиционный материал и способ изготовления из него изделий |
| CN108073763B (zh) * | 2017-12-06 | 2021-02-09 | 重庆大唐国际石柱发电有限责任公司 | 一种电站锅炉飞灰含碳量的测量方法 |
| RU2678288C1 (ru) * | 2018-01-10 | 2019-01-24 | Акционерное общество "Уральский научно-исследовательский институт композиционных материалов" | Волокнистый материал объемной структуры из дискретных фрагментированных углеродных волокон, способ его изготовления и устройство для осуществления способа |
| CN108414836B (zh) * | 2018-04-27 | 2024-01-26 | 河南理工大学 | 氮气驱替煤层气用复电阻测量系统及方法 |
| FR3090011B1 (fr) * | 2018-12-14 | 2021-01-01 | Safran Ceram | Procédé d’infiltration ou de dépôt chimique en phase vapeur |
| CN111123745B (zh) * | 2019-12-05 | 2021-06-22 | 苏州华星光电技术有限公司 | 一种制程设备的控制方法及装置 |
| US11111578B1 (en) | 2020-02-13 | 2021-09-07 | Uchicago Argonne, Llc | Atomic layer deposition of fluoride thin films |
| US12065738B2 (en) | 2021-10-22 | 2024-08-20 | Uchicago Argonne, Llc | Method of making thin films of sodium fluorides and their derivatives by ALD |
| US11901169B2 (en) | 2022-02-14 | 2024-02-13 | Uchicago Argonne, Llc | Barrier coatings |
| CN114935614B (zh) * | 2022-05-24 | 2024-02-23 | 安徽理工大学 | 一种分析煤体复燃特性的模拟实验装置及实验方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3977896A (en) * | 1972-03-09 | 1976-08-31 | General Atomic Company | Process for depositing pyrolytic carbon coatings |
| SU1680800A1 (ru) * | 1989-04-11 | 1991-09-30 | Куйбышевский политехнический институт им.В.В.Куйбышева | Устройство дл нанесени покрытий из газовой фазы |
| DK0792384T3 (da) * | 1994-11-16 | 1999-07-05 | Goodrich Co B F | Apparatur, proces samt produkt ved CVI/CVD med trykgradient |
| RU2173354C2 (ru) * | 1994-11-16 | 2001-09-10 | З Би.эФ. Гудрич Кампэни | Способ и устройство инфильтрации газовой фазы химического вещества и химического осаждения из газовой фазы (варианты), изделие, получаемое этим способом, устройство для подачи первого газа-реагента в печь для инфильтрации и осаждения из газовой фазы и фрикционный диск |
| FR2732677B1 (fr) * | 1995-04-07 | 1997-06-27 | Europ Propulsion | Procede d'infiltration chimique en phase vapeur avec parametres d'infiltration variables |
| US6210745B1 (en) * | 1999-07-08 | 2001-04-03 | National Semiconductor Corporation | Method of quality control for chemical vapor deposition |
-
2003
- 2003-04-28 FR FR0305194A patent/FR2854168B1/fr not_active Expired - Lifetime
-
2004
- 2004-04-27 WO PCT/FR2004/001009 patent/WO2004097065A2/fr not_active Ceased
- 2004-04-27 CA CA2523927A patent/CA2523927C/en not_active Expired - Fee Related
- 2004-04-27 US US10/549,444 patent/US7727591B2/en active Active
- 2004-04-27 RU RU2005131994/02A patent/RU2347009C2/ru active
- 2004-04-27 CN CN2004800104698A patent/CN1777692B/zh not_active Expired - Lifetime
- 2004-04-27 MX MXPA05011570A patent/MXPA05011570A/es active IP Right Grant
- 2004-04-27 UA UAA200509813A patent/UA89025C2/ru unknown
- 2004-04-27 AT AT04742576T patent/ATE521729T1/de active
- 2004-04-27 KR KR1020057020428A patent/KR101179769B1/ko not_active Expired - Fee Related
- 2004-04-27 BR BRPI0409674-6A patent/BRPI0409674A/pt not_active Application Discontinuation
- 2004-04-27 JP JP2006505811A patent/JP4546459B2/ja not_active Expired - Lifetime
- 2004-04-27 EP EP04742576A patent/EP1620577B1/fr not_active Expired - Lifetime
- 2004-04-28 TW TW093111921A patent/TWI352132B/zh not_active IP Right Cessation
-
2005
- 2005-10-16 IL IL171439A patent/IL171439A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2523927C (en) | 2012-09-18 |
| EP1620577A2 (fr) | 2006-02-01 |
| WO2004097065A2 (fr) | 2004-11-11 |
| CN1777692A (zh) | 2006-05-24 |
| UA89025C2 (ru) | 2009-12-25 |
| US7727591B2 (en) | 2010-06-01 |
| CA2523927A1 (en) | 2004-11-11 |
| CN1777692B (zh) | 2012-09-05 |
| ATE521729T1 (de) | 2011-09-15 |
| KR20060010764A (ko) | 2006-02-02 |
| EP1620577B1 (fr) | 2011-08-24 |
| US20060263525A1 (en) | 2006-11-23 |
| FR2854168A1 (fr) | 2004-10-29 |
| IL171439A (en) | 2009-07-20 |
| BRPI0409674A (pt) | 2006-04-18 |
| TW200506089A (en) | 2005-02-16 |
| JP2006524624A (ja) | 2006-11-02 |
| RU2005131994A (ru) | 2006-06-10 |
| FR2854168B1 (fr) | 2007-02-09 |
| JP4546459B2 (ja) | 2010-09-15 |
| RU2347009C2 (ru) | 2009-02-20 |
| WO2004097065A3 (fr) | 2004-12-16 |
| TWI352132B (en) | 2011-11-11 |
| KR101179769B1 (ko) | 2012-09-04 |
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