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Daisuke Iida
Daisuke Iida
Taiyo Nippon Sanso Corp.
Verified email at tn-sanso.co.jp
Title
Cited by
Cited by
Year
633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, MA Najmi, K Ohkawa
Applied Physics Letters 116 (16), 2020
1672020
The micro-LED roadmap: status quo and prospects
CC Lin, YR Wu, HC Kuo, MS Wong, SP DenBaars, S Nakamura, ...
Journal of Physics: Photonics 5 (4), 042502, 2023
1302023
GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate
Y Kuwahara, T Fujii, T Sugiyama, D Iida, Y Isobe, Y Fujiyama, Y Morita, ...
Applied physics express 4 (2), 021001, 2011
1122011
Study on the effect of size on InGaN red micro-LEDs
RH Horng, CX Ye, PW Chen, D Iida, K Ohkawa, YR Wu, DS Wuu
Scientific reports 12 (1), 1324, 2022
1032022
Recent progress in red light-emitting diodes by III-nitride materials
D Iida, K Ohkawa
Semiconductor Science and Technology 37 (1), 013001, 2021
972021
Demonstration of low forward voltage InGaN-based red LEDs
D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, K Ohkawa
Applied physics express 13 (3), 031001, 2020
952020
InGaN-based red light-emitting diodes: from traditional to micro-LEDs
Z Zhuang, D Iida, K Ohkawa
Japanese Journal of Applied Physics 61 (SA), SA0809, 2021
862021
Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN
AM Fischer, Z Wu, K Sun, Q Wei, Y Huang, R Senda, D Iida, M Iwaya, ...
Applied Physics Express 2 (4), 041002, 2009
852009
Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure
D Iida, K Niwa, S Kamiyama, K Ohkawa
Applied Physics Express 9 (11), 111003, 2016
802016
Investigation of InGaN-based red/green micro-light-emitting diodes
Z Zhuang, D Iida, K Ohkawa
Optics Letters 46 (8), 1912-1915, 2021
732021
Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers
D Iida, S Lu, S Hirahara, K Niwa, S Kamiyama, K Ohkawa
Journal of Crystal Growth 448, 105-108, 2016
712016
Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2
D Iida, P Kirilenko, M Velazquez-Rizo, Z Zhuang, MA Najmi, K Ohkawa
AIP Advances 12 (6), 2022
582022
630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays
Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa
Photonics Research 9 (9), 1796-1802, 2021
552021
Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes
Z Zhuang, D Iida, K Ohkawa
Applied Physics Letters 116 (17), 2020
542020
Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
K Ohkawa, F Ichinohe, T Watanabe, K Nakamura, D Iida
Journal of Crystal Growth 512, 69-73, 2019
532019
606-nm InGaN amber micro-light-emitting diodes with an on-wafer external quantum efficiency of 0.56%
Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa
IEEE Electron Device Letters 42 (7), 1029-1032, 2021
522021
Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes
Z Zhuang, D Iida, P Kirilenko, M Velazquez-Rizo, K Ohkawa
Optics Express 28 (8), 12311-12321, 2020
492020
InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall
P Kirilenko, D Iida, Z Zhuang, K Ohkawa
Applied Physics Express 15 (8), 084003, 2022
482022
Surface plasmon coupling dynamics in InGaN/GaN quantum-well structures and radiative efficiency improvement
A Fadil, D Iida, Y Chen, J Ma, Y Ou, PM Petersen, H Ou
Scientific reports 4 (1), 6392, 2014
462014
Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN
Z Zhuang, D Iida, K Ohkawa
Photonics Research 9 (12), 2429-2434, 2021
452021
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Articles 1–20