| Characteristics of p-type ZnSe layers grown by molecular beam epitaxy with radical doping K Ohkawa, TKT Karasawa, TMT Mitsuyu Japanese journal of applied physics 30 (2A), L152, 1991 | 271 | 1991 |
| Characteristics of Cl‐doped ZnSe layers grown by molecular‐beam epitaxy K Ohkawa, T Mitsuyu, O Yamazaki Journal of applied physics 62 (8), 3216-3221, 1987 | 234 | 1987 |
| Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation K Fujii, T Karasawa, K Ohkawa Japanese journal of applied physics 44 (4L), L543, 2005 | 199 | 2005 |
| Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth K Ohkawa, T Karasawa, T Mitsuyu Journal of crystal growth 111 (1-4), 797-801, 1991 | 180 | 1991 |
| 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, MA Najmi, K Ohkawa Applied Physics Letters 116 (16), 2020 | 167 | 2020 |
| The micro-LED roadmap: status quo and prospects CC Lin, YR Wu, HC Kuo, MS Wong, SP DenBaars, S Nakamura, ... Journal of Physics: Photonics 5 (4), 042502, 2023 | 130 | 2023 |
| Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: A computational fluid dynamics simulation study A Hirako, K Kusakabe, K Ohkawa Japanese journal of applied physics 44 (2R), 874, 2005 | 115 | 2005 |
| CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations K Leonardi, H Heinke, K Ohkawa, D Hommel, H Selke, F Gindele, ... Applied physics letters 71 (11), 1510-1512, 1997 | 114 | 1997 |
| 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE K Ohkawa, T Watanabe, M Sakamoto, A Hirako, M Deura Journal of crystal growth 343 (1), 13-16, 2012 | 112 | 2012 |
| Photoelectrochemical properties of p-type GaN in comparison with n-type GaN K Fujii, K Ohkawa Japanese journal of applied physics 44 (7L), L909, 2005 | 109 | 2005 |
| Molecular-beam epitaxial growth of p-and n-type ZnSe homoepitaxial layers K Ohkawa, A Ueno, T Mitsuyu Journal of crystal growth 117 (1-4), 375-384, 1992 | 104 | 1992 |
| Study on the effect of size on InGaN red micro-LEDs RH Horng, CX Ye, PW Chen, D Iida, K Ohkawa, YR Wu, DS Wuu Scientific reports 12 (1), 1324, 2022 | 103 | 2022 |
| Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN M Ono, K Fujii, T Ito, Y Iwaki, A Hirako, T Yao, K Ohkawa The Journal of chemical physics 126 (5), 2007 | 102 | 2007 |
| Recent progress in red light-emitting diodes by III-nitride materials D Iida, K Ohkawa Semiconductor Science and Technology 37 (1), 013001, 2021 | 97 | 2021 |
| Demonstration of low forward voltage InGaN-based red LEDs D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, K Ohkawa Applied physics express 13 (3), 031001, 2020 | 95 | 2020 |
| Photoelectrochemical properties of InGaN for H2 generation from aqueous water K Fujii, K Kusakabe, K Ohkawa Japanese journal of applied physics 44 (10R), 7433, 2005 | 95 | 2005 |
| InGaN-based red light-emitting diodes: from traditional to micro-LEDs Z Zhuang, D Iida, K Ohkawa Japanese Journal of Applied Physics 61 (SA), SA0809, 2021 | 86 | 2021 |
| High-efficiency InGaN red micro-LEDs for visible light communication YM Huang, CY Peng, WC Miao, H Chiang, TY Lee, YH Chang, KJ Singh, ... Photonics Research 10 (8), 1978-1986, 2022 | 85 | 2022 |
| Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping T Mitsuyu, K Ohkawa, O Yamazaki Applied physics letters 49 (20), 1348-1350, 1986 | 81 | 1986 |
| Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure D Iida, K Niwa, S Kamiyama, K Ohkawa Applied Physics Express 9 (11), 111003, 2016 | 80 | 2016 |
Daisuke IidaTaiyo Nippon Sanso Corp.Verified email at tn-sanso.co.jp
