| 8.2% pure selenide kesterite thin‐film solar cells from large‐area electrodeposited precursors L Vauche, L Risch, Y Sánchez, M Dimitrievska, M Pasquinelli, ... Progress in Photovoltaics: Research and Applications 24 (1), 38-51, 2016 | 73* | 2016 |
| Electrodeposition of kesterite thin films for photovoltaic applications: Quo vadis? D Colombara, A Crossay, L Vauche, S Jaime, M Arasimowicz, PP Grand, ... physica status solidi (a) 212 (1), 88-102, 2015 | 67 | 2015 |
| Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold … L Vauche, A Chanuel, E Martinez, MC Roure, C Le Royer, S Becu, ... ACS Applied Electronic Materials 3 (3), 1170-1177, 2021 | 53 | 2021 |
| Cradle-to-gate life cycle assessment (LCA) of GaN power semiconductor device L Vauche, G Guillemaud, JC Lopes Barbosa, L Di Cioccio Sustainability 16 (2), 901, 2024 | 33 | 2024 |
| H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces S Benrabah, M Legallais, P Besson, S Ruel, L Vauche, B Pelissier, ... Applied Surface Science 582, 152309, 2022 | 33 | 2022 |
| Recent developments and prospects of fully recessed MIS gate structures for GaN on Si power transistors P Fernandes Paes Pinto Rocha, L Vauche, P Pimenta-Barros, S Ruel, ... Energies 16 (7), 2978, 2023 | 30 | 2023 |
| Normally-OFF 650V GaN-on-Si MOSc-HEMT transistor: benefits of the fully recessed gate architecture C Le Royer, B Mohamad, J Biscarrat, L Vauche, R Escoffier, J Buckley, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 25 | 2022 |
| Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration E Veinberg‐Vidal, L Vauche, K Medjoubi, C Weick, C Besançon, ... Progress in Photovoltaics: Research and Applications 27 (7), 652-661, 2019 | 25 | 2019 |
| Rapid thermal processing annealing challenges for large scale Cu2ZnSnS4 thin films L Vauche, J Dubois, A Laparre, M Pasquinelli, S Bodnar, PP Grand, ... physica status solidi (a) 212 (1), 103-108, 2015 | 22 | 2015 |
| Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function RK Kammeugne, C Leroux, J Cluzel, L Vauche, C Le Royer, ... Solid-State Electronics 184, 108078, 2021 | 15 | 2021 |
| Wafer bonding approaches for III-V on Si multi-junction solar cells L Vauche, E Veinberg-Vidal, C Weick, C Morales, V Larrey, C Lecouvey, ... 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2492-2497, 2017 | 15 | 2017 |
| Cu2ZnSnSe4 thin film solar cells above 5% conversion efficiency from electrodeposited Cu Sn Zn precursors L Vauche, J Dubois, A Laparre, F Mollica, R Bodeux, S Delbos, CM Ruiz, ... physica status solidi (a) 211 (9), 2082-2085, 2014 | 15 | 2014 |
| Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT PFPP Rocha, L Vauche, B Mohamad, W Vandendaele, E Martinez, ... Power Electronic Devices and Components 4, 100033, 2023 | 14* | 2023 |
| Thorough Investigation of Low Frequency Noise Mechanisms in AlGaN/GaN and Al2O3/GaN HEMTs RK Kammeugne, C Theodorou, C Leroux, X Mescot, L Vauche, ... 2021 IEEE International Electron Devices Meeting (IEDM), 39.4. 1-39.4. 4, 2021 | 13 | 2021 |
| A novel insight on interface traps density (Dit) extraction in GaN-on-Si MOS-c HEMTs W Vandendaele, S Martin, MA Jaud, A Krakovinsky, L Vauche, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2020 | 13 | 2020 |
| Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method RK Kammeugne, C Leroux, J Cluzel, L Vauche, C Le Royer, R Gwoziecki, ... IEEE Transactions on Electron Devices 67 (11), 4649-4653, 2020 | 11 | 2020 |
| Luminescent coupling effect in wafer-bonded III-V on silicon multijunction solar cells BMF Yu Jeco, E Veinberg-Vidal, L Vauche, K Yoshida, R Tamaki, ... Journal of Photonics for Energy 9 (1), 015504-015504, 2019 | 11 | 2019 |
| Development of III-V on Si Multijunction Photovoltaics by Wafer Bonding L Vauche, EV Vidal, C Jany, C Morales, J Decobert, C Dupre, P Mur 33rd European Photovoltaic Solar Energy Conference and Exhibition, 1228 - 1231, 2017 | 11 | 2017 |
| Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM T Spelta, M Veillerot, E Martinez, D Mariolle, R Templier, N Chevalier, ... Solid-State Electronics 208, 108743, 2023 | 10 | 2023 |
| Detrimental effect of Sn-rich secondary phases on Cu2ZnSnSe4 based solar cells L Vauche, L Risch, M Arasimowicz, Y Sánchez, E Saucedo, M Pasquinelli, ... Journal of Renewable and Sustainable Energy 8 (3), 2016 | 10 | 2016 |
Romain GwozieckiCEA GrenobleVerified email at cea.fr
