| Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, J Cluzel, JP Barnes, S Martin, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2019 | 32 | 2019 |
| Normally-OFF 650V GaN-on-Si MOSc-HEMT transistor: benefits of the fully recessed gate architecture C Le Royer, B Mohamad, J Biscarrat, L Vauche, R Escoffier, J Buckley, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 25 | 2022 |
| Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2020 | 19 | 2020 |
| Influence of carbon on pBTI degradation in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ... IEEE Transactions on Electron Devices 68 (4), 2017-2024, 2021 | 13 | 2021 |
| A novel insight on interface traps density (Dit) extraction in GaN-on-Si MOS-c HEMTs W Vandendaele, S Martin, MA Jaud, A Krakovinsky, L Vauche, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2020 | 13 | 2020 |
| Study on the difference between ID (VG) and C (VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, J Coignus, J Cluzel, A Krakovinsky, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021 | 9 | 2021 |
| Role of free holes in nBTI degradation in GaN-on-Si MOS-channel HEMTs W Vandendaele, MA Jaud, AG Viey, B Mohamad, C Le Royer, L Vauche, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 8 | 2022 |
| Reliability of GaN MOSc-HEMTs: From TDDB to threshold voltage instabilities W Vandendaele, C Leurquin, R Lavieville, MA Jaud, AG Viey, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2023 | 7 | 2023 |
| Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors TM Frutuoso, X Garros, J Lugo-Alvarez, RK Kammeugne, LDM Zouknak, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 3A. 2-1-3A. 2-6, 2022 | 7 | 2022 |
| Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage C Leurquin, W Vandendaele, AG Viey, R Gwoziecki, R Escoffier, R Salot, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 10B. 3-1-10B. 3-6, 2022 | 6 | 2022 |
| Comprehensive TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs MA Jaud, W Vandendaele, B Rrustemi, AG Viey, S Martin, C Le Royer, ... IEEE Transactions on Electron Devices 69 (2), 669-674, 2021 | 5 | 2021 |
| Influence of gate length on pBTI in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, R Gwoziecki, A Torres, M Plissonnier, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 5 | 2019 |
| Breakthrough processes for Si CMOS devices with BEOL compatibility for 3D sequential integrated more than Moore analog applications D Bosch, A Viey, TM Frutuoso, P Lheritier, C Licitra, N Zerhouni, A Albouy, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 3 | 2024 |
| Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface B Rrustemi, AG Viey, MA Jaud, F Triozon, W Vandendaele, C Leroux, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 3 | 2021 |
| In depth TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs MA Jaud, W Vandendaele, B Rrustemi, AG Viey, S Martin, C Le Royer, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 3 | 2021 |
| Characterization of degradation mechanisms and electrical reliability study on GaN-on-Si power transistors A Viey Université Grenoble Alpes [2020-....], 2021 | 1 | 2021 |
| Caractérisation des mécanismes de dégradation au sein de transistors de puissance à base de GaN sur Si, et étude de leur fiabilité électrique A Viey Université Grenoble Alpes, 2021 | 1 | 2021 |
| Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETs AG Viey, W Vandendaele, PK Wafo, X Garros, L Basset, F Ponthenier, ... 2025 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2025 | | 2025 |
| Concentration estimation method A Viey, MA Jaud, W VANDENDAELE US Patent 11,761,920, 2023 | | 2023 |
| Transistor characterization A Viey, W VANDENDAELE, J Cluzel, J COIGNUS US Patent 11,656,267, 2023 | | 2023 |
