| Cleaining Process and Operating Process for a Cvd Reactor S Leone, M Mauceri, G Abbondanza, D Crippa, G Valente, M Masi, F Preti US Patent App. 11/660,689, 2007 | 543 | 2007 |
| Chloride-based CVD growth of silicon carbide for electronic applications H Pedersen, S Leone, O Kordina, A Henry, S Nishizawa, Y Koshka, ... Chemical reviews 112 (4), 2434-2453, 2012 | 159 | 2012 |
| Metal‐organic chemical vapor deposition of aluminum scandium nitride S Leone, J Ligl, C Manz, L Kirste, T Fuchs, H Menner, M Prescher, ... physica status solidi (RRL)–Rapid Research Letters 14 (1), 1900535, 2020 | 145 | 2020 |
| Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS) H Pedersen, S Leone, A Henry, FC Beyer, V Darakchieva, E Janzén Journal of crystal growth 307 (2), 334-340, 2007 | 124 | 2007 |
| 4H SiC epitaxial growth with chlorine addition F La Via, G Galvagno, G Foti, M Mauceri, S Leone, G Pistone, ... Chemical vapor deposition 12 (8‐9), 509-515, 2006 | 118 | 2006 |
| Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition C Manz, S Leone, L Kirste, J Ligl, K Frei, T Fuchs, M Prescher, P Waltereit, ... Semiconductor Science and Technology 36 (3), 034003, 2021 | 91 | 2021 |
| Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures O Ambacher, B Christian, M Yassine, M Baeumler, S Leone, R Quay Journal of applied physics 129 (20), 2021 | 90 | 2021 |
| D-band and G-band high-performance GaN power amplifier MMICs M Ćwikliński, P Brückner, S Leone, C Friesicke, H Maßler, R Lozar, ... IEEE Transactions on Microwave Theory and Techniques 67 (12), 5080-5089, 2019 | 90 | 2019 |
| Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures J Ligl, S Leone, C Manz, L Kirste, P Doering, T Fuchs, M Prescher, ... Journal of Applied Physics 127 (19), 2020 | 86 | 2020 |
| AlScN/GaN HEMTs grown by metal-organic chemical vapor deposition with 8.4 W/mm output power and 48% power-added efficiency at 30 GHz S Krause, I Streicher, P Waltereit, L Kirste, P Brückner, S Leone IEEE Electron Device Letters 44 (1), 17-20, 2022 | 80 | 2022 |
| Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors S Leone, R Fornari, M Bosi, V Montedoro, L Kirste, P Doering, ... Journal of Crystal Growth 534, 125511, 2020 | 67 | 2020 |
| Toward an ideal Schottky barrier on 3C-SiC J Eriksson, MH Weng, F Roccaforte, F Giannazzo, S Leone, V Raineri Applied Physics Letters 95 (8), 2009 | 66 | 2009 |
| Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates S Leone, H Pedersen, A Henry, O Kordina, E Janzén Journal of Crystal Growth 311 (12), 3265-3272, 2009 | 66 | 2009 |
| Suppression of iron memory effect in GaN epitaxial layers S Leone, F Benkhelifa, L Kirste, C Manz, S Mueller, R Quay, ... physica status solidi (b) 255 (5), 1700377, 2018 | 61 | 2018 |
| Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N N Wolff, G Schönweger, I Streicher, MR Islam, N Braun, P Straňák, ... Advanced Physics Research 3 (5), 2300113, 2024 | 56 | 2024 |
| A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology F Thome, P Brückner, S Leone, R Quay IEEE Transactions on Microwave Theory and Techniques 70 (2), 1367-1376, 2021 | 56 | 2021 |
| Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition I Streicher, S Leone, L Kirste, C Manz, P Straňák, M Prescher, P Waltereit, ... physica status solidi (RRL)–Rapid Research Letters 17 (2), 2200387, 2023 | 55 | 2023 |
| Thick homoepitaxial layers grown on on-axis Si-face 6H-and 4H-SiC substrates with HCl addition S Leone, H Pedersen, A Henry, O Kordina, E Janzén Journal of crystal growth 312 (1), 24-32, 2009 | 52 | 2009 |
| Effect of different carbon doping techniques on the dynamic properties of GaN-on-Si buffers H Yacoub, C Mauder, S Leone, M Eickelkamp, D Fahle, M Heuken, ... IEEE Transactions on Electron Devices 64 (3), 991-997, 2017 | 45 | 2017 |
| Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction P Mazzolini, Z Fogarassy, A Parisini, F Mezzadri, D Diercks, M Bosi, ... Advanced Functional Materials 33 (2), 2207821, 2023 | 43 | 2023 |
Lutz KirsteDr. rer. nat., Fraunhofer IAFVerified email at iaf.fraunhofer.de
