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Neil Curson
Neil Curson
Professor of Nanoelectronics, London Centre for Nanotechnology, UCL
Verified email at ucl.ac.uk - Homepage
Title
Cited by
Cited by
Year
Atomically precise placement of single dopants in Si
SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ...
Physical review letters 91 (13), 136104, 2003
5402003
Towards the fabrication of phosphorus qubits for a silicon quantum computer
JL O’Brien, SR Schofield, MY Simmons, RG Clark, AS Dzurak, NJ Curson, ...
Physical Review B 64 (16), 161401, 2001
2882001
Toward atomic-scale device fabrication in silicon using scanning probe microscopy
FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ...
Nano Letters 4 (10), 1969-1973, 2004
2252004
Quantum engineering at the silicon surface using dangling bonds
SR Schofield, P Studer, CF Hirjibehedin, NJ Curson, G Aeppli, DR Bowler
Nature communications 4 (1), 1649, 2013
2082013
Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
L Oberbeck, NJ Curson, MY Simmons, R Brenner, AR Hamilton, ...
Applied physics letters 81 (17), 3197-3199, 2002
1262002
Progress in silicon-based quantum computing
RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ...
Philosophical Transactions of the Royal Society of London. Series A …, 2003
972003
Nondestructive imaging of atomically thin nanostructures buried in silicon
G Gramse, A Kölker, T Lim, TJZ Stock, H Solanki, SR Schofield, ...
Science advances 3 (6), e1602586, 2017
862017
Thermal dissociation and desorption of on Si(001): A reinterpretation of spectroscopic data
HF Wilson, O Warschkow, NA Marks, NJ Curson, SR Schofield, ...
Physical Review B—Condensed Matter and Materials Physics 74 (19), 195310, 2006
862006
Phosphine dissociation on the Si (001) surface
HF Wilson, O Warschkow, NA Marks, SR Schofield, NJ Curson, PV Smith, ...
Physical review letters 93 (22), 226102, 2004
812004
Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy
L Oberbeck, NJ Curson, T Hallam, MY Simmons, G Bilger, RG Clark
Applied Physics Letters 85 (8), 1359-1361, 2004
762004
Atomic-scale patterning of arsenic in silicon by scanning tunneling microscopy
TJZ Stock, O Warschkow, PC Constantinou, J Li, S Fearn, E Crane, ...
ACS nano 14 (3), 3316-3327, 2020
742020
Phosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structures
O Warschkow, HF Wilson, NA Marks, SR Schofield, NJ Curson, PV Smith, ...
Physical Review B—Condensed Matter and Materials Physics 72 (12), 125328, 2005
622005
Scanning probe microscopy for silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ...
Molecular Simulation 31 (6-7), 505-515, 2005
612005
Reaction paths of phosphine dissociation on silicon (001)
O Warschkow, NJ Curson, SR Schofield, NA Marks, HF Wilson, ...
The Journal of Chemical Physics 144 (1), 2016
602016
STM characterization of the Si-P heterodimer
NJ Curson, SR Schofield, MY Simmons, L Oberbeck, JL O’brien, RG Clark
Physical Review B 69 (19), 195303, 2004
602004
Single photon detection with a quantum dot transistor
AJ Shields, MP O'Sullivan, I Farrer, DA Ritchie, ML Leadbeater, NK Patel, ...
Japanese Journal of Applied Physics 40 (3S), 2058, 2001
572001
Topological phases of a dimerized Fermi–Hubbard model for semiconductor nano-lattices
NH Le, AJ Fisher, NJ Curson, E Ginossar
npj Quantum Information 6 (1), 24, 2020
542020
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
K Sinthiptharakoon, SR Schofield, P Studer, V Brázdová, CF Hirjibehedin, ...
Journal of Physics: Condensed Matter 26 (1), 012001, 2013
482013
Phosphine dissociation and diffusion on Si (001) observed at the atomic scale
SR Schofield, NJ Curson, O Warschkow, NA Marks, HF Wilson, ...
The Journal of Physical Chemistry B 110 (7), 3173-3179, 2006
472006
Towards the atomic-scale fabrication of a silicon-based solid state quantum computer
MY Simmons, SR Schofield, JL O’Brien, NJ Curson, L Oberbeck, T Hallam, ...
Surface science 532, 1209-1218, 2003
472003
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Articles 1–20