| Robust compact model of high-voltage MOSFET’s drift region G Pahwa, A Sharma, R Goel, G Gill, H Agarwal, YS Chauhan, C Hu IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2022 | 16 | 2022 |
| Compact modeling of impact ionization in high-voltage devices G Gill, A Singhal, G Pahwa, C Hu, H Agarwal IEEE Transactions on Electron Devices 70 (5), 2389-2394, 2023 | 12 | 2023 |
| Compact modeling of ldmos transistors over a wide temperature range including cryogenics Y Machhiwar, G Gill, KN Kaushal, NR Mohapatra, H Agarwal IEEE Transactions on Electron Devices 71 (1), 77-83, 2023 | 7 | 2023 |
| Comprehensive high-voltage parameter extraction strategy for BSIM-BULK HV model G Gill, Y Machhiwar, G Pahwa, C Hu, H Agarwal IEEE Transactions on Electron Devices 71 (1), 70-76, 2023 | 6 | 2023 |
| An improved robust infinitely differentiable drift resistance model for BSIM high voltage compact model A Singhal, G Gill, G Pahwa, C Hu, H Agarwal 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 2 | 2023 |
| Demonstration of On-Chip Test Decompression for EDT using Binary Encoded Neural Autoencoders P Daniel, S Singh, G Gill, A Gangwar, B Ganesh, K Chakrabarti 2019 IEEE International Test Conference India (ITC India), 1-7, 2019 | 2 | 2019 |
| Improved Compact Modeling of Snapback Behaviour in ESD MOSFETs A Singhal, G Gill, A Lahgere, G Pahwa, H Agarwal 2024 International Conference on Simulation of Semiconductor Processes and …, 2024 | 1 | 2024 |
| Improved ESDFET Compact Model Incorporating Transient, Temperature, and Body Bias Effects A Singhal, G Gill, G Pahwa, H Agarwal IEEE Transactions on Electron Devices, 2025 | | 2025 |
| A Comprehensive Analysis of Safe Operating Area Limits in Ferroelectric-Based DEMOS G Gill, A Singhal, G Pahwa, A Lahgere, H Agarwal IEEE Transactions on Electron Devices, 2024 | | 2024 |
Girish PahwaAssistant Professor, ICST, National Yang Ming Chiao Tung UniversityVerified email at nycu.edu.tw
