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K. E. J. Goh
K. E. J. Goh
IMRE
Verified email at imre.a-star.edu.sg - Homepage
Title
Cited by
Cited by
Year
Electrically conductive filament for 3D-printed circuits and sensors
SW Kwok, KHH Goh, ZD Tan, STM Tan, WW Tjiu, JY Soh, ZJG Ng, ...
Applied Materials Today 9, 167-175, 2017
4102017
Toward atomic-scale device fabrication in silicon using scanning probe microscopy
FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ...
Nano Letters 4 (10), 1969-1973, 2004
2252004
Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2
L Cheng, X Wang, W Yang, J Chai, M Yang, M Chen, Y Wu, X Chen, ...
Nature Physics 15, 347-351, 2019
1772019
Evidence of spin frustration in a vanadium diselenide monolayer magnet
PKJ Wong, W Zhang, F Bussolotti, X Yin, TS Herng, L Zhang, YL Huang, ...
Advanced materials 31 (23), 1901185, 2019
1712019
Realization of atomically controlled dopant devices in silicon
FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh, L Oberbeck, ...
Small 3 (4), 563-567, 2007
1542007
Can Reconstructed Se‐Deficient Line Defects in Monolayer VSe2 Induce Magnetism?
R Chua, J Yang, X He, X Yu, W Yu, F Bussolotti, PKJ Wong, KP Loh, ...
Advanced Materials 32 (24), 2000693, 2020
1242020
Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier
YF Lim, K Priyadarshi, F Bussolotti, PK Gogoi, X Cui, M Yang, J Pan, ...
ACS nano 12 (2), 1339-1349, 2018
1012018
Roadmap on finding chiral valleys: screening 2D materials for valleytronics
F Bussolotti, H Kawai, ZE Ooi, V Chellappan, D Thian, ALC Pang, ...
Nano Futures 2 (3), 032001, 2018
1002018
Interlayer interactions in 2D WS 2/MoS 2 heterostructures monolithically grown by in situ physical vapor deposition
W Yang, H Kawai, M Bosman, B Tang, J Chai, W Le Tay, J Yang, HL Seng, ...
Nanoscale 10 (48), 22927-22936, 2018
912018
Influence of doping density on electronic transport in degenerate Si:P -doped layers
KEJ Goh, L Oberbeck, MY Simmons, AR Hamilton, MJ Butcher
Physical Review B—Condensed Matter and Materials Physics 73 (3), 035401, 2006
902006
Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular Beam Epitaxy Grown Monolayer Vanadium Ditelluride
PKJ Wong, W Zhang, J Zhou, F Bussolotti, X Yin, L Zhang, AT N’Diaye, ...
ACS nano 13 (11), 12894-12900, 2019
682019
Effect of encapsulation temperature on Si: P δ-doped layers
KEJ Goh, L Oberbeck, MY Simmons, AR Hamilton, RG Clark
Applied physics letters 85 (21), 4953-4955, 2004
672004
Electrical Doping Effect of Vacancies on Monolayer MoS2
J Yang, H Kawai, CPY Wong, KEJ Goh
The Journal of Physical Chemistry C 123 (5), 2933-2939, 2019
652019
2023 roadmap for materials for quantum technologies
C Becher, W Gao, S Kar, CD Marciniak, T Monz, JG Bartholomew, ...
Materials for Quantum Technology 3 (1), 012501, 2023
63*2023
Single layer MoS2 nanoribbon field effect transistor
D Kotekar-Patil, J Deng, SL Wong, CS Lau, KEJ Goh
Applied Physics Letters 114 (1), 2019
622019
Scanning probe microscopy for silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ...
Molecular Simulation 31 (6-7), 505-515, 2005
612005
Impact of S-Vacancies on the Charge Injection Barrier at the Electrical Contact with the MoS2 Monolayer
F Bussolotti, J Yang, H Kawai, CPY Wong, KEJ Goh
ACS nano 15 (2), 2686-2697, 2021
582021
Electron-electron interactions in highly disordered two-dimensional systems
KEJ Goh, MY Simmons, AR Hamilton
Physical Review B—Condensed Matter and Materials Physics 77 (23), 235410, 2008
572008
One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy
FJ Ruess, B Weber, KEJ Goh, O Klochan, AR Hamilton, MY Simmons
Physical Review B—Condensed Matter and Materials Physics 76 (8), 085403, 2007
562007
Dielectrics for two-dimensional transition-metal dichalcogenide applications
CS Lau, S Das, IA Verzhbitskiy, D Huang, Y Zhang, T Talha-Dean, W Fu, ...
ACS nano 17 (11), 9870-9905, 2023
552023
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