| State of the art of high temperature power electronics C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ... Materials Science and Engineering: B 176 (4), 283-288, 2011 | 526 | 2011 |
| Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices C Raynaud, D Tournier, H Morel, D Planson Diamond and related materials 19 (1), 1-6, 2010 | 152 | 2010 |
| Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes R Pérez, D Tournier, A Pérez-Tomás, P Godignon, N Mestres, J Millán IEEE Transactions on Electron Devices 52 (10), 2309-2316, 2005 | 130 | 2005 |
| SiC integrated circuit control electronics for high-temperature operation M Alexandru, V Banu, X Jorda, J Montserrat, M Vellvehi, D Tournier, ... IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014 | 93 | 2014 |
| Towards an airborne high temperature SiC inverter D Bergogne, H Morel, D Planson, D Tournier, P Bevilacqua, B Allard, ... 2008 IEEE Power Electronics Specialists Conference, 3178-3183, 2008 | 61 | 2008 |
| Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment R Perez, N Mestres, D Tournier, P Godignon, J Millán Diamond and related materials 14 (3-7), 1146-1149, 2005 | 55 | 2005 |
| Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H–SiC after high temperature treatments R Pérez, N Mestres, J Montserrat, D Tournier, P Godignon physica status solidi (a) 202 (4), 692-697, 2005 | 41 | 2005 |
| Experimental determination of impact ionization coefficients in 4H-SiC DM Nguyen, C Raynaud, N Dheilly, M Lazar, D Tournier, P Brosselard, ... Diamond and related materials 20 (3), 395-397, 2011 | 34 | 2011 |
| SiC power devices operation from cryogenic to high temperature: investigation of various 1.2 kV SiC power devices T Chailloux, C Calvez, N Thierry-Jebali, D Planson, D Tournier Materials Science Forum 778, 1122-1125, 2014 | 31 | 2014 |
| A digital-controller parameter-tuning approach, application to a switch-mode power supply X Lin-Shi, F Morel, B Allard, D Tournier, JM Retif, S Guo, Y Gao 2007 IEEE International Symposium on Industrial Electronics, 3356-3361, 2007 | 31 | 2007 |
| Optical beam induced current measurements: principles and applications to SiC device characterization C Raynaud, DM Nguyen, N Dheilly, D Tournier, P Brosselard, M Lazar, ... physica status solidi (a) 206 (10), 2273-2283, 2009 | 28 | 2009 |
| Recent developments in SiC power devices and related technology J Millan, P Godignon, D Tournier 2004 24th International Conference on Microelectronics (IEEE Cat. No …, 2004 | 26 | 2004 |
| A 4H-SiC high-power-density VJFET as controlled current limiter D Tournier, P Godignon, J Montserrat, D Planson, C Raynaud, JP Chante, ... IEEE Transactions on Industry Applications 39 (5), 1508-1513, 2003 | 26 | 2003 |
| A highly effective edge termination design for SiC planar high power devices R Pérez, N Mestres, S Blanqué, D Tournier, X Jordá, P Godignon, ... Materials Science Forum 457, 1253-1256, 2004 | 22 | 2004 |
| Composants de puissance en SiC D Tournier Ed. Techniques Ingénieur, 2007 | 21 | 2007 |
| Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes JM Bluet, D Ziane, G Guillot, D Tournier, P Brosselard, J Montserrat, ... Superlattices and Microstructures 40 (4-6), 399-404, 2006 | 21 | 2006 |
| State of art of current and future technologies in current limiting devices R Ouaida, M Berthou, D Tournier, JF Depalma 2015 IEEE First International Conference on DC Microgrids (ICDCM), 175-180, 2015 | 19 | 2015 |
| Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes H Hamad, C Raynaud, P Bevilacqua, D Tournier, B Vergne, D Planson Applied Physics Letters 104 (8), 2014 | 19 | 2014 |
| Temperature dependence of 4H-SiC JBS and Schottky diodes after high temperature treatment of contact metal R Pérez, N Mestres, D Tournier, X Jordá, P Godignon, M Vellvehi Materials Science Forum 483, 945-948, 2005 | 18 | 2005 |
| Wide band gap semiconductors benefits for high power, high voltage and high temperature applications D Tournier, P Brosselard, C Raynaud, M Lazar, H Morel, D Planson Advanced Materials Research 324, 46-51, 2011 | 16 | 2011 |
Hervé MorelSenior Researcher (Directeur de Recherche), CNRS, INSA Lyon, Lab. Ampère, orcid.org/0000-0001-7866-Verified email at insa-lyon.fr
