| High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices SA Pour, EK Huang, G Chen, A Haddadi, BM Nguyen, M Razeghi Applied Physics Letters 98 (14), 2011 | 161 | 2011 |
| Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection BM Nguyen, S Bogdanov, SA Pour, M Razeghi Applied Physics Letters 95 (18), 2009 | 151 | 2009 |
| Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices AM Hoang, G Chen, A Haddadi, S Abdollahi Pour, M Razeghi Applied Physics Letters 100 (21), 2012 | 133 | 2012 |
| Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures M Razeghi, S Abdollahi Pour, EK Huang, G Chen, A Haddadi, ... Opto-Electronics Review 19 (3), 261-269, 2011 | 74 | 2011 |
| Effect of contact doping in superlattice-based minority carrier unipolar detectors BM Nguyen, G Chen, AM Hoang, S Abdollahi Pour, S Bogdanov, ... Applied Physics Letters 99 (3), 2011 | 57 | 2011 |
| Photovoltaic MWIR type-II superlattice focal plane array on GaAs substrate EKW Huang, PY Delaunay, BM Nguyen, SA Pour, M Razeghi IEEE Journal of Quantum Electronics 46 (12), 1704-1708, 2010 | 32 | 2010 |
| Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate SA Pour, BM Nguyen, S Bogdanov, EK Huang, M Razeghi Applied Physics Letters 95 (17), 2009 | 32 | 2009 |
| Type-II antimonide-based superlattices for the third generation infrared focal plane arrays M Razeghi, EK Huang, BM Nguyen, SA Pour, PY Delaunay Infrared Technology and Applications XXXVI 7660, 442-455, 2010 | 31 | 2010 |
| Gain and recombination dynamics in photodetectors made with quantum nanostructures: The quantum dot in a well and the quantum well B Movaghar, S Tsao, S Abdollahi Pour, T Yamanaka, M Razeghi Physical Review B—Condensed Matter and Materials Physics 78 (11), 115320, 2008 | 31 | 2008 |
| High-operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice M Razeghi, SA Pour, E Huang, G Chen, A Haddadi, BM Nguyen Infrared Technology and Applications XXXVII 8012, 882-892, 2011 | 24 | 2011 |
| Low irradiance background limited type-II superlattice MWIR M-barrier imager EK Huang, SA Pour, MA Hoang, A Haddadi, M Razeghi, MZ Tidrow Optics letters 37 (11), 2025-2027, 2012 | 22 | 2012 |
| State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging M Razeghi, BM Nguyen, PY Delaunay, EK Huang, SA Pour, P Manukar, ... Nanophotonics and Macrophotonics for Space Environments III 7467, 181-193, 2009 | 20 | 2009 |
| Recent advances in high-performance antimonide-based superlattice FPAs M Razeghi, EK Huang, BM Nguyen, S Ramezani-Darvish, SA Pour, ... Infrared Technology and Applications XXXVII 8012, 284-296, 2011 | 16 | 2011 |
| High-operating-temperature MWIR photon detectors based on type II InAs/GaSb superlattice M Razeghi, BM Nguyen, PY Delaunay, SA Pour, EK Huang, P Manukar, ... Quantum Sensing and Nanophotonic Devices VII 7608, 525-534, 2010 | 13 | 2010 |
| Tight-binding theory for the thermal evolution of optical band gaps in semiconductors and superlattices S Abdollahi Pour, B Movaghar, M Razeghi Physical Review B—Condensed Matter and Materials Physics 83 (11), 115331, 2011 | 11 | 2011 |
| Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays S Tsao, T Yamanaka, SA Pour, IK Park, B Movaghar, M Razeghi Quantum Dots, Particles, and Nanoclusters VI 7224, 158-168, 2009 | 4 | 2009 |
| Demonstration of high performance long wavelength infrared type II InAs S Abdollahi Pour, BM Nguyen, S Bogdanov, EK Huang, M Razeghi Applied physics letters 95 (17), 2009 | 4 | 2009 |
| Revolutionary development of Type-II GaSb/InAs superlatices for third generation of IR imaging M Razeghi, SA Pour Infrared Technology and Applications XXXVIII 8353, 352-367, 2012 | 3 | 2012 |
| Competing technology for high-speed HOT-IR-FPAs M Razeghi, SA Pour Infrared Technology and Applications XXXVIII 8353, 403-411, 2012 | 1 | 2012 |
| Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection BM Nguyen, SA Pour, S Bogdanov, M Razeghi Quantum Sensing and Nanophotonic Devices VII 7608, 659-667, 2010 | 1 | 2010 |
Binh-Minh NguyenHRL Laboratories, LLCVerified email at u.northwestern.edu
